RF Transistor for Low Noise Amplifier 1 V, 0 ma, f T = GHz typ. This RF transistor is designed for low noise amplifier applications. MCPH package is suitable for use under high temperature environment because it has superior heat radiation characteristics. This RF transistor is AEC Q1 qualified and PPAP capable for automotive applications. Features Low noise Use: NF = 1. db typ. (f = 1 GHz) High Cut off Frequency: f T = GHz typ. (V CE = V) High Gain: S1e = 1 db typ. (f = 1 GHz) MCPH4 Package is Pin compatible with SC 8FL AEC Q1 Qualified and PPAP Capable These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications Low Noise Amplifier for Digital Radio Low Noise Amplifier for TV Low Noise Amplifier for FM Radio RF Amplifier for UHF Application MAXIMUM RATINGS at T A = C Rating Symbol Value Unit Collector to Base Voltage V CBO 0 V Collector to Emitter Voltage V CEO 1 V Emitter to Base Voltage V EBO V Collector Current I C 0 ma Collector Dissipation P C 40 mw Operating Junction and Storage Temperature T J, T stg to + Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. C 4 GQ XX SC 8FL MCPH4 CASE 419AR MARKING DIAGRAM = Specific Device Code = Lot Number ORDERING INFORMATION Device Package Shipping NSVF401SG4T1G 1 ELECTRICAL CONNECTION NPN 1, LOT No. GQ SC 8FL (Pb Free) 1: Emitter : Collector : Emitter 4: Base 000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. LOT No. Semiconductor Components Industries, LLC, 01 March, 018 Rev. 0 1 Publication Order Number: NSFV401SG4/D
Table 1. ELECTRICAL CHARACTERISTICS at T A = C (Note 1) Parameter Symbol Conditions Value Min Typ Max Collector Cutoff Current I CBO V CB = V, I E = 0 A 1.0 A Emitter Cutoff Current I EBO V EB = 1 V, I C = 0 A 1.0 A DC Current Gain h FE V CE = V, I C = 0 ma 60 Gain Bandwidth Product f T V CE = V, I C = 0 ma 8 GHz Forward Transfer Gain S1e V CE = V, I C = 0 ma, f = 1 GHz 14 1 db Noise Figure NF V CE = V, I C = ma, f = 1 GHz 1. 1.8 db Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pay attention to handling since it is liable to be affected by static electricity due to the high frequency process adopted. Unit
TYPICAL CHARACTERISTICS Collector Current, I C ma 0 90 80 0 60 0 40 0 0 00 A 900 A 800 A 00 A 600 A 00 A 400 A 00 A 00 A 0 A Collector Current, I C ma 0 V CE =V 90 80 0 60 0 40 0 0 0 IB =0 A 0 4 6 8 1 Collector to Emitter Voltage, VCE V 0 0 0. 0.4 0.6 0.8 1.0 Base to Emitter Voltage, VBE V Figure 1. I C vs. V CE Figure. I C vs. V BE 00 V CE =V f=1mhz DC Current Gain, hfe 0 Output Capacitance, Cob pf 1.0 1.0 0 Collector Current, IC ma 0.1 0.1 1.0 0 Collector to Base Voltage,VCB V Figure. h FE vs. I C Figure 4. C ob vs. V CB Reverse Transfer Capacitance, Cre pf 1.0 f=1mhz Gain Bandwidth Product, ft GHz 0 V CE =V f=1ghz 0.1 0.1 1.0 0 Collector to Base Voltage,V CB V 1.0 1.0 0 Collector Current, IC ma Figure. Cre vs. V CB Figure 6. f T vs. I C
TYPICAL CHARACTERISTICS Forward Transfer Gain, S1e db 0 1 VCE=V f=1ghz 0 0 1.0 0 1.0 0 Collector Current, IC ma Collector Current, IC ma Noise Figure, NF db 9 8 6 4 1 Zs=Zsopt Zs=0 V CE =V f=1ghz Figure. S1e vs. I C Figure 8. NF vs. I C 00 40 Collector Dissipation, PC mw 400 0 00 0 00 0 0 0 0 0 40 60 80 0 140 160 Ambient Temperature, Ta C Figure 9. P C vs. T A 4
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MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SC 8FL / MCPH4 CASE 419AR ISSUE O DATE 0 DEC 011 DOCUMENT NUMBER: STATUS: NEW STANDARD: Semiconductor Components Industries, LLC, 00 October, 00 Rev. 0 DESCRIPTION: 98AON664E ON SEMICONDUCTOR STANDARD SC 8FL / MCPH4 http://onsemi.com 1 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped CONTROLLED COPY in red. Case Outline Number: PAGE 1 OF XXX
DOCUMENT NUMBER: 98AON664E PAGE OF ISSUE REVISION DATE O RELEASED FOR PRODUCTION FROM SANYO TO ON SEMICONDUCTOR. REQ. 0 DEC 011 BY D. TRUHITTE. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Semiconductor Components Industries, LLC, 011 December, 011 Rev. O Case Outline Number: 419AR
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