Standard Recovery Diodes, (Stud Version), 200 A

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Transcription:

VS- Standard Recovery Diodes, (Stud Version), 200 A DO-30 (DO-205AC) PRIMARY CHARACTERISTICS I F(AV) 200 A Package DO-30 (DO-205AC) Circuit configuration Single FEATURES Wide current range High voltage ratings up to 2400 V High surge current capabilities Stud cathode and stud anode version Standard JEDEC types Compression bonded encapsulations Designed and qualified for industrial level Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS Converters Power supplies Machine tool controls High power drives Medium traction applications MAJOR RATINGS AND CHARACTERISTICS VS-SD200N/R PARAMETER TEST CONDITIONS UNITS 1600 to 2000 2400 200 200 A I F(AV) T C 110 110 C I F(RMS) 314 314 50 Hz 4700 4700 A I FSM 60 Hz 4920 4920 I 2 t 50 Hz 110 110 60 Hz 101 101 ka 2 s V RRM Range 1600 to 2000 2400 V T J -40 to +180 + C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-SD200N/R VOLTAGE CODE V RRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V V RSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 16 1600 1700 20 2000 2 24 2400 2500 I RRM MAXIMUM AT T J = T J MAXIMUM ma 15 Revision: 11-Jan-18 1 Document Number: 93541 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?90

VS- FORWARD CONDUCTION PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current 200 A at case temperature 110 C I F(AV) 180 conduction, half sine wave Maximum average forward current 220 A at case temperature C Maximum RMS forward current I F(RMS) DC at 95 C case temperature 314 t = 10 ms No voltage 4700 Maximum peak, one-cycle forward, t = 8.3 ms reapplied 4920 A I non-repetitive surge current FSM t = 10 ms % V RRM 3950 t = 8.3 ms reapplied Sinusoidal half wave, 4140 initial t = 10 ms No voltage 110 Maximum I 2 t for fusing I 2 t t = 8.3 ms reapplied 101 t = 10 ms % V RRM 78 ka 2 s t = 8.3 ms reapplied 71 Maximum I 2 Öt for fusing I 2 Öt t = 0.1 to 10 ms, no voltage reapplied 1 ka 2 Ös (16.7 % x x I Low level value of threshold voltage V F(AV) < I < x I F(AV) ), F(TO)1 0.90 V High level value of threshold voltage V F(TO)2 (I > x I F(AV) ), 1.00 (16.7 % x x I Low level value of forward slope resistance r F(AV) < I < x I F(AV) ), f1 0.79 mw High level value of forward slope resistance r f2 (I > x I F(AV) ), 0.64 Maximum forward voltage drop V FM I pk = 630 A,, t p = 10 ms sinusoidal wave 1.40 V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS SD200N/R 1600 to 2000 2400 Maximum junction operating temperature range T J -40 to 180-40 to Maximum storage temperature range T Stg -55 to 200 Maximum thermal resistance, junction to case R thjc DC operation 0.23 Maximum thermal resistance, case to heatsink R thcs Mounting surface, smooth, flat and greased 0.08 Maximum allowed mounting torque ± 10 % Not-lubricated threads 14 Nm Approximate weight 120 g Case style See dimensions (link at the end of datasheet) DO-30 (DO-205AC) UNITS C K/W R thjc CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS 180 0.041 0.030 120 0.049 0.051 90 0.063 0.068 60 0.093 0.096 0.156 0.157 Note The table above shows the increment of thermal resistance R thjc when devices operate at different conduction angles than DC K/W Revision: 11-Jan-18 2 Document Number: 93541 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?90

VS- Maximum Allowable Case Temperature ( C) 180 170 R (DC) = 0.23 K/W thjc 160 Conduction Angle 140 130 120 110 60 90 120 180 0 40 80 120 160 200 240 Average Forward Current (A) Maximum Allowable Case Temperature ( C) 180 170 160 140 130 120 110 R (DC) = 0.23 K/W thjc 90 Conduction Period 60 120 180 DC 90 0 50 200 250 300 350 Average Forward Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics Maximum Average Forward Power Loss (W) 300 250 200 50 180 120 90 60 RMS Limit Conduction Angle Tj = Tj max 0.3 K/W 0.4 K/W 0.6 K/W 0.8 K/W 1.4 K/W 1.8 K/W 0.2 K/W 0.12 K/W RthSA = 0.08 K/W - ΔR 0 0 50 200 250 40 60 80 120 140 160 180 Average Forward Current (A) Maximum Allowable Ambient Temperature ( C) Fig. 3 - Forward Power Loss Characteristics Maximum Average Forward Power Loss (W) 400 350 300 250 200 50 DC 180 120 90 60 RMS Limit Conduction Period Tj = Tj max 0 0 50 200 250 300 350 Average Forward Current (A) RthSA = 0.08 K/W - Delta R 0.12 K/W 0.2 K/W 0.3 K/W 0.4 K/W 0.6 K/W 0.8 K/W 1.4 K/W 1.8 K/W 40 60 80 120 140 160 180 Maximum Allowable Ambient Temperature ( C) Fig. 4 - Forward Power Loss Characteristics Revision: 11-Jan-18 3 Document Number: 93541 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?90

VS- Peak Half Sine Wave Forward Current (A) 4500 4000 3500 3000 2500 2000 0 At Any Rated Load Condition And With Rated Vrrm Applied Following Surge. Initial Tj = Tj max. @ 60 Hz 0.0083 s @ 50 Hz 0.0 s 0 1 10 Number Of Equal Amplitude Half Cycle Current Pulses (N) Peak Half Sine Wave Forward Current (A) 5000 4500 4000 3500 3000 2500 2000 0 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Initial Tj = Tj max. No Voltage Reapplied Rated V rrm Reapplied 0 0.01 0.1 1 Pulse Train Duration (s) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current 10 000 Instantaneous Forward Current (A) 0 Tj = 25 C Tj = Tj max. 0.5 1 1.5 2 2.5 3 3.5 Instantaneous Forward Voltage (V) Fig. 7 - Forward Voltage Drop Characteristics Transient Thermal Impedance Z thjc (K/W) 1 Steady State Value: R thjc = 0.23 K/W (DC Operation) 0.1 0.01 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance Z thjc Characteristic Revision: 11-Jan-18 4 Document Number: 93541 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?90

VS- ORDERING INFORMATION TABLE Device code VS- SD 20 0 N 24 P C 1 2 3 4 5 6 7 8 1 - product 2 - Diode 3 - Essential part number 4-0 = standard recovery 5 - N = stud normal polarity (cathode to stud) R = stud reverse polarity (anode to stud) 6 - Voltage code x = V RRM (see Voltage Ratings table) 7 - P = stud base DO-30 (DO-205AC) 1/2" 20UNF-2A M = stud base DO-30 (DO-205AC) M12 x 1.75 8 - C = ceramic housing For metric device M12 x 1.75 contact factory Dimensions LINKS TO RELATED DOCUMENTS www.vishay.com/doc?95302 Revision: 11-Jan-18 5 Document Number: 93541 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?90

Outline Dimensions DO-205AC (DO-30) DIMENSIONS in millimeters (inches) Ceramic housing 16.5 (0.65) 2.6 (0.10) 6.5 (0.26) MIN. 35 (1.38) DIA. 8.5 (0.33) NOM. C.S. 16 mm 2 (0.015 s.i.) 157 (6.18) 170 (6.69) 55 (2.16) MIN. DIA. 22.5 (0.88) SW 27 12.5 (0.49) 21 (0.82) 1/2"-20UNF-2A* *For metric device: M12 x 1.75 contact factory Document Number: 95302 For technical questions, contact: indmodules@vishay.com www.vishay.com Revision: 11-Apr-08 1

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