FDD8447L 4V N-Channel PowerTrench MOSFET 4V, 5A, 8.5mΩ Features Max r DS(on) = 8.5mΩ at V GS = V, I D = 4A Max r DS(on) =.mω at V GS = 4.5V, I D = A Fast Switching RoHS Compliant G S D-PAK TO-252 (TO-252) D General Description May 28 This N-Channel MOSFET has been produced using Fairchild Semiconductor s proprietary PowerTrench technology to deliver low r DS(on) and optimized BV DSS capability to offer superior performance benefit in the application. Applications Inverter Power Supplies G D S FDD8447L 4V N-Channel PowerTrench MOSFET MOSFET Maximum Ratings T C = 25 C unless otherwise noted Symbol Parameter Ratings Units V DS Drain to Source Voltage 4 V V GS Gate to Source Voltage ±2 V I D Thermal Characteristics Drain Current -Continuous (Package limited) T C = 25 C 5 -Continuous (Silicon limited) T C = 25 C 57 -Continuous T A = 25 C (Note a) 5.2 -Pulsed I S Max Pulse Diode Current A E AS Drain-Source Avalanche Energy (Note 3) 53 mj Power Dissipation T C = 25 C 44 P D T A = 25 C (Note a) 3. T A = 25 C (Note b).3 T J, T STG Operating and Storage Junction Temperature Range -55 to +5 C A W R θjc Thermal Resistance, Junction to Case 2.8 R θja Thermal Resistance, Junction to Ambient (Note a) 4 R θja Thermal Resistance, Junction to Ambient (Note b) 96 Package Marking and Ordering Information C/W Device Marking Device Package Reel Size Tape Width Quantity FDD8447L FDD8447L D-PAK(TO-252) 3 2mm 25 units 28 Fairchild Semiconductor Corporation FDD8447L Rev.C3 www.fairchildsemi.com
Electrical Characteristics T J = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV DSS Drain to Source Breakdown Voltage I D = 25µA, V GS = V 4 V BV DSS Breakdown Voltage Temperature T J Coefficient I D = 25µA, referenced to 25 C 35 mv/ C I DSS Zero Gate Voltage Drain Current V DS = 32V, V GS = V µa I GSS Gate to Source Leakage Current V GS = ±2V, V GS = V ± na On Characteristics (Note 2) V GS(th) Gate to Source Threshold Voltage V GS = V DS, I D = 25µA..9 3. V V GS(th) Gate to Source Threshold Voltage TJ Temperature Coefficient I D = 25µA, referenced to 25 C -5 mv/ C V GS = V, I D = 4A 7. 8.5 r DS(on) Static Drain to Source On Resistance V GS = 4.5V, I D = A 8.5. mω V GS = V, I D = 4A, T J =25 C.4 4. g FS Forward Transconductance V DS = 5V, I D = 4A 58 S Dynamic Characteristics C iss Input Capacitance 97 pf V DS = 2V, V GS = V, C oss Output Capacitance 25 pf f = MHz C rss Reverse Transfer Capacitance 5 pf R g Gate Resistance f = MHz.27 Ω FDD8447L 4V N-Channel PowerTrench MOSFET Switching Characteristics t d(on) Turn-On Delay Time 2 2 ns V DD = 2V, I D = A t r Rise Time 2 2 ns V GS = V, R GEN = 6Ω t d(off) Turn-Off Delay Time 38 6 ns t f Fall Time 9 8 ns Q g(tot) Total Gate Charge, V GS = V 37 52 nc V DD = 2V, I D = 4A Q g(tot) Total Gate Charge, V GS = 5V 2 28 nc V GS = V Q gs Gate to Source Gate Charge 6 nc Q gd Gate to Drain Miller Charge 7 nc Drain-Source Diode Characteristics I S Maximum Continuous Drain-Source Diode Forward Current (Note a) 2.6 A V SD Source to Drain Diode Forward Voltage V GS = V, I S = 4A (Note 2).8.2 V t rr Reverse Recovery Time 22 ns I F = 4A, di/dt = A/µs Q rr Reverse Recovery Charge nc Notes: : R θja is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user s board design. --------------- a. 4 C/W when mounted on a in2 pad of 2 oz copper b. 96 C/W when mounted on a minimum pad. 2: Pulse Test: Pulse Width < 3µs, Duty cycle < 2.%. 3: Starting TJ = 25 o C, L = mh, IAS = 7.5A, VDD = 4V, VGS = V. 4 FDD8447L Rev.C3 2 www.fairchildsemi.com
Typical Characteristics I D, DRAIN CURRENT (A) 8 6 4 2 NORMALIZED DRAIN-SOURCE ON-RESISTANCE V GS = V 6.V 5.V 4.5V 4.V 3.5V 3.V.5.5 2 2.5 V DS, DRAIN-SOURCE VOLTAGE (V).6.4.2.8 Figure. On-Region Characteristics ID = 4A VGS = V NORMALIZED DRAIN-SOURCE ON-RESISTANCE rds(on), ON-RESISTANCE (OHM) 3 2.6 2.2.8.4.6.2.75.5.25..75 VGS = 3.V 3.5V 4.V 4.5V 5.V 6.V.V 2 4 6 8 ID, DRAIN CURRENT (A) Figure 2. On-Resistance Variation with Drain Current and Gate Voltage TA = 25 o C TA = 25 o C ID = 7A FDD8447L 4V N-Channel PowerTrench MOSFET.6-5 -25 25 5 75 25 5 TJ, JUNCTION TEMPERATURE ( o C).5 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature Figure 4. On-Resistance Variation with Gate-to-Source Voltage ID, DRAIN CURRENT (A) VDS = 5V 8 6 4 TA = 25 o C -55 o C 2 25 o C.5 2 2.5 3 3.5 4 4.5 VGS, GATE TO SOURCE VOLTAGE (V) I S, REVERSE DRAIN CURRENT (A).... V GS = V T A = 25 o C 25 o C -55 o C.2.4.6.8.2.4 V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature FDD8447L Rev.C3 3 www.fairchildsemi.com
Typical Characteristics I D, DRAIN CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V). 8 6 4 2 ID = 4A VDS = V 2V 3V 2 3 4 Qg, GATE CHARGE (nc) Figure 7. Gate Charge Characteristics R DS(ON) LIMIT V GS = V SINGLE PULSE R θja = 96 o C/W T A = 25 o C ms s DC ms ms µs... V DS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area CAPACITANCE (pf) P(pk), PEAK TRANSIENT POWER (W) 3 25 2 5 5 8 6 4 2 C rss C oss 2 3 4 V DS, DRAIN TO SOURCE VOLTAGE (V) C iss f = MHz V GS = V Figure 8. Capacitance Characteristics SINGLE PULSE R θja = 96 C/W T A = 25 C... t, TIME (sec) Figure. Single Pulse Maximum Power Dissipation FDD8447L 4V N-Channel PowerTrench MOSFET I(pk), PEAK TRANSIENT CURRENT (A) 8 6 4 2 SINGLE PULSE R θja = 96 C/W T A = 25 C.... t, TIME (sec) I(AS), AVALANCHE CURRENT (A) T J = 25 o C. t AV, TIME IN AVANCHE(ms) Figure. Single Pulse Maximum Peak Current Figure 2. Unclamped Inductive Switching Capability FDD8447L Rev.C3 4 www.fairchildsemi.com
Typical Characteristics r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE.. D =.5.2..5.2. SINGLE..... t, TIME (sec) Figure 3. Transient Thermal Response Curve P(pk) Thermal characterization performed using the conditions described in Note b. Transient thermal response will change depending on the circuit board design. R θja (t) = r(t) * R θja R θja = 96 C/W t t 2 T J - T A = P * R θja (t) Duty Cycle, D = t / t 2 FDD8447L 4V N-Channel PowerTrench MOSFET FDD8447L Rev.C3 5 www.fairchildsemi.com
tm tm TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. ACEx Build it Now CorePLUS CorePOWER CROSSVOLT CTL Current Transfer Logic EcoSPARK EfficentMax EZSWITCH * Fairchild Fairchild Semiconductor FACT Quiet Series FACT FAST FastvCore FlashWriter * FPS F-PFS FRFET Global Power Resource SM Green FPS Green FPS e-series GTO IntelliMAX ISOPLANAR MegaBuck MICROCOUPLER MicroFET MicroPak MillerDrive MotionMax Motion-SPM OPTOLOGIC OPTOPLANAR PDP-SPM Power-SPM PowerTrench Programmable Active Droop QFET QS Quiet Series RapidConfigure Saving our world mw at a time SmartMax SMART START SPM STEALTH SuperFET SuperSOT -3 SuperSOT -6 SuperSOT -8 SuperMOS The Power Franchise TinyBoost TinyBuck TinyLogic TINYOPTO TinyPower TinyPWM TinyWire µserdes UHC Ultra FRFET UniFET VCX VisualMax FDD8447L 4V P-Channel PowerTrench MOSFET * EZSWITCH and FlashWriter are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Obsolete Formative or In Design First Production Full Production Not In Production This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I34 FDD8447L Rev.C3 6 www.fairchildsemi.com