Anti-Surge Thick Film Chip Resistors Anti-Surge Thick Film Chip Re sis tors 63, 85, 26, 2 : ERJ P3, PA3, P6, P8, P4 Fetures ESD surge chrcteristics superior to stndrd metl fi lm resistors High relibility Metl glze thick fi lm resistive element nd three lyers of electrodes Suitble for both refl ow nd fl ow soldering High power.2 W : 68(63) size(erjp3).25 W : 68(63) size().5 W : 22 size(erjp6), 3225(2) size(erjp4).66 W : 326(26) size(erjp8) Reference Stndrds IEC 65-8, JIS C 52-8, EIAJ RC-234B AEC-Q2 qulifi ed RoHS complint Pckging Methods, Lnd Pttern, Soldering Conditions nd Sfety Precutions Plese see Dt Files Explntion of Prt Numbers 2 3 4 5 6 7 8 9 2 Product Thick Film Chip Resistors Size, Power Rting : inch Power R. P3 : 63.2 W PA3 : 63.25 W P6 : 85.5 W P8 : 26.66 W P4 : 2.5 W D F J ±.5 % ± % ± 5 % Vlue The first two or three digits re significnt figures of resistnce nd the third or 4th one denotes number of zeros following. Three digit type (%), four digit type (±%, ±.) Exmple: 2222.2 k, 2 k V U Pckging Methods Pckging Punched Crrier Tping Embossed Crrier Tping ERJP3 ERJP6 ERJP8 ERJP4 Construction Dimensions in mm (not to scle) Protective coting Electrode (Inner) W L Alumin substrte t Thick fi lm resistive element Electrode (Between) Electrode (Outer) ERJP3 (63) (63) ERJP6 ERJP8 (26) ERJP4 (2) b Dimensions (mm) L W b t Mss (Weight) [g/ pcs.].6 ±.5.8 +.5.5 +.5.3 ±.5.45 ±. 2.5..6 ±.5.8 +.5.5 +.5.25 ±..45 ±. 2.5. 2. ±.2.25 ±..25 ±.2.4 ±.2.6 ±. 4 3.2 +.5.2.6 +.5.5.4 ±.2.5 ±.2.6 ±. 3.2 ±.2 2.5 ±.2.35 ±.2.5 ±.2.6 ±. 6 6 9 Feb. 24
Anti-Surge Thick Film Chip Resistors Rtings ERJP3 (63) (63) ERJP6 ERJP8 (26) ERJP4 (2) Power Rting (3) t 7 C (W) Element Voltge () Mximum Overlod Voltge (2).2 5 2.25 5 2.5 4 6.66 5.5 2 4 (%) () Rted Continuous Working Voltge (RCWV) shll be de ter mined from RCWV= Power Rting Re sis tnce Vlues, or Element Voltge list ed bove, whichever less. (2) Overlod (Short-time Overlod) Test Voltge (SOTV) shll be de termined from SOTV=2.5 Power Rting or mx. Over lod Volt ge list ed bove which ev er less. (3) Use it on the condition tht the cse temperture is below 55 C. ±.5 ± ±.5, ± ±.5, ± ±.5, ± ±.5, ± (Ω) to M to M to M to M to.5 M to M to 3.3 M to M to M to M to M T.C.R. ( 6 / C) ±2 R < Ω 5 to +4 Ω < R±2 ± ±2 R < 33 Ω ±3 33 Ω < R ± R < Ω to +6 Ω < R < 33 Ω±3 33 Ω < R±2 ± R < Ω to +6 Ω < R ±2 ± R < Ω to +6 Ω < R ±2 Ctegory Temperture ( C) Power Derting Curve For resistors operted in mbient tempertures bove 7 C, power rting shll be derted in ccordnce with the fi gure on the right. When the temperture of ERJP4 is 55 C or less, the derting strt temperture cn be chnged to 25 C. (See the dotted line) ESD Chrcteristic R=(.5 k)/5(>.5 k) Rted Lod (%) 55 C 8 6 4 2 6 7 C ERJ P3, PA3, P4 25 C 55 C ERJ P6, P8 4 2 2 4 6 8 2 4 6 8 Ambient Temperture ( C) ±3.kV C=5pF Smple Anti-Surge Thick Film Chip Resistors(ERJP ) Thick Film Chip Resistors(ERJ ) - -2-3 ERJP3, PA3(68 (63) size) ERJP3 ERJ3G - -3 k k k M -2 ERJP6 (22 size) ERJP6 ERJ6G k k k M - -2-3 ERJP8(326 (26) size) ERJP8 ERJ8G - -3 k k k M -2 ERJP4(3225 (2) size) ERJP4 ERJ4 k k k M 2 6 Feb. 24
Anti-Surge Thick Film Chip Resistors (Double-sided resistive elements structure) Anti-Surge Thick Film Chip Re sis tors (Double-sided resistive elements structure) 85 : ERJ P6W Fetures ESD surge chrcteristics superior to stndrd metl fi lm resistors High relibility Metl glze thick fi lm resistive element nd three lyers of electrodes Suitble for both refl ow nd fl ow soldering High power.5 W : 22 size(erjp6w) High pulse chrcteristics.5 times higher thn 85 inch size Anti-Surge Thick Film Chip Resistors (ERJP6) Reference Stndrds IEC 65-8, JIS C 52-8, EIAJ RC-234B AEC-Q2 qulifi ed RoHS complint Pckging Methods, Lnd Pttern, Soldering Conditions nd Sfety Precutions Plese see Dt Files Explntion of Prt Numbers 2 3 4 5 6 7 8 9 2 Product Thick Film Chip Resistors Size, Power Rting : inch Power R. P6W : 85.5 W F J ± % ± 5 % Vlue The first two or three digits re significnt figures of resistnce nd the third or 4th one denotes number of zeros following. Three digit type (%), four digit type (±%) Exmple: 2222.2 k, 2 k Pckging Methods Pckging V Punched Crrier Tping Construction Dimensions in mm (not to scle) Protective coting Electrode (Inner) L Alumin substrte W Electrode (Between) t Electrode (Outer) Thick fi lm resistive element Bottom side element ERJP6W Dimensions (mm) L W t Mss (Weight) [g/ pcs.] 2. ±.2.25 ±.2.35 ±.2.65 ±. 6 Feb. 24 2
Anti-Surge Thick Film Chip Resistors (Double-sided resistive elements structure) Rtings ERJP6W Power Rting (3) t 7 C (W) Element Voltge () Mximum Overlod Voltge (2).5 5 2 (%) ± (Ω) to M to M T.C.R. ( 6 / C) ±2 R < Ω to +6 Ω < R±2 Ctegory Temperture ( C) () Rted Continuous Working Voltge (RCWV) shll be de ter mined from RCWV= Power Rting Re sis tnce Vlues, or Element Voltge list ed bove, whichever less. (2) Overlod (Short-time Overlod) Test Voltge (SOTV) shll be de termined from SOTV=2.5 Power Rting or mx. Over lod Volt ge list ed bove which ev er less. (3) Use it on the condition tht the cse temperture is below 55 C. Power Derting Curve For resistors operted in mbient tempertures bove 7 C, power rting shll be derted in ccordnce with the fi gure on the right. ESD Chrcteristic R=(.5 k)/5(>.5 k) Rted Lod (%) 55 C 7 C 8 6 4 2 6 55 C 4 2 2 4 6 8 2 4 6 8 Ambient Temperture ( C) ±3.kV C=5pF Smple Anti-Surge Thick Film Chip Resistors(ERJP6W ) Thick Film Chip Resistors(ERJ6G ) - -2-3 k k k M Power Curve In rush pulse Chrcteristic Pp Power Pulse durtion : t Test cycle : cycles Spec : vlue = within ±% Anti-Surge Thick Film Chip Resistors(ERJP6W ) Anti-Surge Thick Film Chip Resistors(ERJP6 ) Power : Pp (W) 22 Feb. 24
Anti-Pulse Thick Film Chip Resistors Anti-Pulse Thick Film Chip Re sis tors 85, 26, 2 : ERJ T6, T8, T4 Fetures Anti-Pulse chrcteristics High pulse chrcteristics chieved by the optimized trimming specifi ctions High relibility Metl glze thick fi lm resistive element nd three lyers of electrodes Suitble for both refl ow nd fl ow soldering High power.25 W : 22 size.33 W : 326(26) size.5 W : 3225(2) size Reference Stndrds IEC 65-8, JIS C 52-8, EIAJ RC-234B AEC-Q2 qulifi ed RoHS complint Pckging Methods, Lnd Pttern, Soldering Conditions nd Sfety Precutions Plese see Dt Files Explntion of Prt Numbers 2 3 4 5 6 7 8 9 Product Thick Film Chip Resistors : inch T6 : 85 T8 : 26 T4 : 2 Size, Power Rting Power R..25 W.33 W.5 W J ± 5 % Pckging Methods Pckging V Punched Crrier Tping U Embossed Crrier Tping ERJT6 ERJT8 ERJT4 Vlue The first two digits re significnt figures of resistnce nd the third one denotes number of zeros following. Exmple: 2222.2 k Construction Dimensions in mm (not to scle) Protective coting L Alumin substrte Electrode (Inner) W t Electrode (Between) b Thick fi lm resistive element Electrode (Outer) ERJT6 ERJT8 (26) ERJT4 (2) Dimensions (mm) L W b t Mss (Weight) [g/ pcs.] 2. ±.2.25 ±..25 ±.2.4 ±.2.6 ±. 4 3.2 +.5.6 +.5.4 ±.2.5 ±.2.6 ±..5.2 3.2 ±.2 2.5 ±.2.35 ±.2.5 ±.2.6 ±. 6 3 23 Feb. 24
Anti-Pulse Thick Film Chip Resistors Rtings ERJT6 Power Rting t 7 C (W) Element Voltge () Mximum Overlod Voltge (2) (%).25 5 2 (Ω) to M T.C.R. ( 6 / C) Less thn Ω : to +6 Less thn 33 Ω : ±3 More thn 33 Ω : ±2 Ctegory Temperture ( C) ERJT8 (26).33 2 4 to M Less thn Ω : to +6 More thn Ω : ±2 ERJT4 (2).5 2 4 to M Less thn Ω : to +6 More thn Ω : ±2 () Rted Continuous Working Voltge (RCWV) shll be de ter mined from RCWV= Power Rting Re sis tnce Vlues, or Element Voltge list ed bove, whichever less. (2) Overlod (Short-time Overlod) Test Voltge (SOTV) shll be de termined from SOTV=2.5 Power Rting or mx. Over lod Volt ge list ed bove which ev er less. Power Derting Curve For resistors operted in mbient tempertures bove 7 C, power rting shll be derted in ccordnce with the fi gure on the right. Power Curve In rush pulse Chrcteristic Rted Lod (%) 55 C 7 C 8 6 4 2 6 55 C 4 2 2 4 6 8 2 4 6 8 Ambient Temperture ( C) Pp Power Pulse durtion : t Period time : s Test cycle : cycles Spec : vlue = within % ERJT6 (22 size) ERJT8 (326 (26) size) ERJT4 (3225 (2) size) Power : Pp (W) Power : Pp (W) Power : Pp (W) 24 3 Feb. 24