Power MOSFET PROUCT SUMMARY (V) 60 R S(on) () = 10 V 0.50 Q g (Max.) (nc) 12 Q gs (nc) 3.8 Q gd (nc) 5.1 Configuration Single S SOT223 G G S Marking code: FE PChannel MOSFET FEATURES Surface mount Available in tape and reel ynamic dv/dt rating Repetitive avalanche rated Pchannel Available Fast switching Ease of paralleling Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 ESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and costeffectiveness. The SOT223 package is designed for surfacemounting using vapor phase, infrared, or wave soldering techniques. Its unique package design allows for easy automatic pickandplace as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of greater than 1.25 W is possible in a typical surface mount application. ORERING INFORMATION Package SOT223 SOT223 Lead (Pb)free and Halogenfree SiHFL9014GE3 SiHFL9014TRGE3 Lead (Pb)free IRFL9014PbF IRFL9014TRPbF a SiHFL9014E3 SiHFL9014TE3 a Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (T C = 25 C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT rainsource Voltage 60 V GateSource Voltage ± 20 Continuous rain Current at 10 V T C = 25 C 1.8 I T C = 100 C 1.1 A Pulsed rain Current a I M 14 Linear erating Factor 0.025 Linear erating Factor (PCB Mount) e 0.017 W/ C Single Pulse Avalanche Energy b E AS 140 mj Repetitive Avalanche Current a I AR 1.8 A Repetitive Avalanche Energy a E AR 0.31 mj Maximum Power issipation T C = 25 C 3.1 P Maximum Power issipation (PCB Mount) e T A = 25 C 2.0 W Peak iode Recovery dv/dt c dv/dt 4.5 V/ns Operating Junction and Storage Temperature Range T J, T stg 55 to +150 Soldering Recommendations (Peak Temperature) d for 10 s 300 C Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. V = 25 V, starting T J = 25 C, L = 50 mh, R g = 25, I AS = 1.8 A (see fig. 12). c. I S 6.7 A, di/dt 90 A/μs, V, T J 150 C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR4 or G10 material). S141686Rev. F, 18Aug14 1 ocument Number: 91195
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum JunctiontoAmbient (PCB Mount) a R thja 60 C/W Maximum JunctiontoCase (rain) R thjc 40 Note a. When mounted on 1" square PCB (FR4 or G10 material). SPECIFICATIONS (T J = 25 C, unless otherwise noted) PARAMETER SYMBOL TEST CONITIONS MIN. TYP. MAX. UNIT Static rainsource Breakdown Voltage = 0 V, I = 250 μa 60 V Temperature Coefficient /T J Reference to 25 C, I = 1 ma 0.059 V/ C GateSource Threshold Voltage (th) =, I = 250 μa 2.0 4.0 V GateSource Leakage I GSS = ± 20 V ± 100 na = 60 V, = 0 V 100 Zero Gate Voltage rain Current I SS = 48 V, = 0 V, T J = 125 C 500 μa rainsource OnState Resistance R S(on) = 10 V I = 1.1 A b 0.50 Forward Transconductance g fs = 25 V, I = 1.1 A b 1.3 S ynamic Input Capacitance C iss = 0 V, 270 Output Capacitance C oss = 25 V, 170 pf Reverse Transfer Capacitance C rss f = 1.0 MHz, see fig. 5 31 Total Gate Charge Q g 12 GateSource Charge Q gs I = 10 V = 6.7 A, = 48 V, see fig. 6 and 13 b 3.8 nc Gaterain Charge Q gd 5.1 TurnOn elay Time t d(on) 11 Rise Time t r V = 30 V, I = 6.7 A, 63 TurnOff elay Time t d(off) R g = 24, R = 4.0, see fig. 10 b 9.6 ns Fall Time t f 31 Internal rain Inductance L Between lead, 4.0 6 mm (0.25") from package and center of nh G Internal Source Inductance L S die contact 6.0 rainsource Body iode Characteristics Continuous Sourcerain iode Current I MOSFET symbol S 1.8 showing the integral reverse Pulsed iode Forward Current a G I SM p n junction diode 14 Body iode Voltage V S T J = 25 C, I S = 1.8 A, = 0 V b 5.5 V Body iode Reverse t rr 80 160 ns Recovery Time T J = 25 C, I F = 6.7 A, di/dt = 100 A/μs b Body iode Reverse Recovery Charge Q rr 0.096 0.19 μc Forward TurnOn Time t on Intrinsic turnon time is negligible (turnon is dominated by L S and L ) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %. S S A S141686Rev. F, 18Aug14 2 ocument Number: 91195
TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) I, rain Current (A) Top 15 V 10 V 10 1 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V 10 0 10 1 4.5 V 20 µs Pulse Width T C = 25 C 10 1 10 0 10 1 91195_01, raintosource Voltage (V) Fig. 1 Typical Output Characteristics, T C = 25 C R S(on), raintosource On Resistance (Normalized) 91195_04 2.5 2.0 1.5 1.0 0.5 I = 6.7 A = 10 V 0.0 60 40 20 0 20 40 60 80 100 120 140 160 T J, Junction Temperature ( C) Fig. 4 Normalized OnResistance vs. Temperature I, rain Current (A) 91195_02 10 1 10 0 10 1 Top 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V 10 0 10 1, raintosource Voltage (V) 4.5 V 20 µs Pulse Width T C = 150 C Fig. 2 Typical Output Characteristics, T C = 150 C Capacitance (pf) 91195_05 600 500 400 300 200 100 0 10 0 10 1 = 0 V, f = 1 MHz C iss = C gs + C gd, C ds Shorted C rss = C gd C oss = C ds + C gd C iss C oss C rss, raintosource Voltage (V) Fig. 5 Typical Capacitance vs. raintosource Voltage I, rain Current (A) 91195_03 10 1 10 0 10 1 4 25 C 150 C 20 µs Pulse Width = 25 V 5 6 7 8 9 10, GatetoSource Voltage (V), GatetoSource Voltage (V) 91195_06 20 16 12 8 4 0 I = 6.7 A = 30 V = 48 V Q G, Total Gate Charge (nc) For test circuit see figure 13 0 4 8 12 16 Fig. 3 Typical Transfer Characteristics Fig. 6 Typical Gate Charge vs. GatetoSource Voltage S141686Rev. F, 18Aug14 3 ocument Number: 91195
2.0 I S, Reverse rain Current (A) 91195_07 10 1 150 C 25 C 10 0 = 0 V 10 1 1.0 2.0 3.0 4.0 5.0 6.0 V S, Sourcetorain Voltage (V) Fig. 7 Typical Sourcerain iode Forward Voltage I, rain Current (A) 91195_09 1.5 1.0 0.5 0.0 25 50 75 100 125 150 T C, Case Temperature ( C) Fig. 9 Maximum rain Current vs. Case Temperature 10 2 5 Operation in this area limited by R S(on) R I, rain Current (A) 91195_08 2 10 5 2 1 5 2 0.1 0.1 T C = 25 C T J = 150 C Single Pulse 2 5 2 5 2 5 100 µs 1 ms 10 ms 1 10 10 2 2 5, raintosource Voltage (V) 10 3 R g 10 V Pulse width 1 µs uty factor 0.1 %.U.T. V + Fig. 10a Switching Time Test Circuit 10 % t d(on) t r t d(off) t f Fig. 8 Maximum Safe Operating Area 90 % Fig. 10b Switching Time Waveforms 10 2 Thermal Response (Z τηjc ) 91195_11 10 1 0.1 10 2 0 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse (Thermal Response) 10 5 10 4 10 3 10 2 0.1 1 10 t 1, Rectangular Pulse uration (s) Fig. 11 Maximum Effective Transient Thermal Impedance, JunctiontoCase S141686Rev. F, 18Aug14 4 ocument Number: 91195 P M t 1 t 2 Notes: 1. uty Factor, = t 1 /t 2 2. Peak T j = P M x Z thjc + T C 10 2 10 3
Vary t p to obtain required I AS L I AS R g.u.t + V I AS V 10 V t p 0.01 Ω t p Fig. 12a Unclamped Inductive Test Circuit Fig. 12b Unclamped Inductive Waveforms E AS, Single Pulse Energy (mj) 400 300 200 100 I Top 0.80 A 1.1 A Bottom 1.8 A V = 25 V 0 25 50 75 100 125 150 91195_12c Starting T J, Junction Temperature ( C) Fig. 12c Maximum Avalanche Energy vs. rain Current Current regulator Same type as.u.t. 10 V Q G 12 V 0.2 µf 50 kω 0.3 µf Q GS Q G.U.T. + V G Charge 3 ma I G I Current sampling resistors Fig. 13a Basic Gate Charge Waveform Fig. 13b Gate Charge Test Circuit S141686Rev. F, 18Aug14 5 ocument Number: 91195
+ www.vishay.com Peak iode Recovery dv/dt Test Circuit.U.T. + Circuit layout considerations Low stray inductance Ground plane Low leakage inductance current transformer + R g dv/dt controlled by R g I S controlled by duty factor.u.t. device under test + V Note Compliment NChannel of.u.t. for driver river gate drive P.W. Period = P.W. Period = 10 V a.u.t. l S waveform Reverse recovery current Reapplied voltage Body diode forward current di/dt.u.t. waveform iode recovery dv/dt Body diode forward drop Inductor current V Ripple 5 % I S Note a. = 5 V for logic level and 3 V drive devices Fig. 14 For PChannel maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91195. S141686Rev. F, 18Aug14 6 ocument Number: 91195
Package Information SOT223 (HIGH VOLTAGE) A 3 B B1 0.10 (0.004) M C B M C A 0.08 (0.003) 4 E 3 1 2 3 H 0.20 (0.008) M C A M L1 4 x L e e1 3 x B 0.10 (0.004) M C B M θ 4 x C MILLIMETERS INCHES IM. MIN. MAX. MIN. MAX. A 1.55 1.80 0.061 0.071 B 0.65 0.85 0.026 0.033 B1 2.95 3.15 0.116 0.124 C 0.25 0.35 0.010 0.014 6.30 6.70 0.248 0.264 E 3.30 3.70 0.130 0.146 e 2.30 BSC 0.0905 BSC e1 4.60 BSC 0.181 BSC H 6.71 7.29 0.264 0.287 L 0.91 0.036 L1 0.061 BSC 0.0024 BSC θ 10' 10' ECN: S82109Rev. A, 15Sep08 WG: 5969 Notes 1. imensioning and tolerancing per ASME Y14.5M1994. 2. imensions are shown in millimeters (inches). 3. imension do not include mold flash. 4. Outline conforms to JEEC outline TO261AA. ocument Number: 91363 www.vishay.com Revision: 15Sep08 1
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