GaN Power ICs at 1 MHz+: Topologies, Technologies and Performance PSMA Industry Session, Semiconductors Dan Kinzer, CTO/COO dan.kinzer@navitassemi.com March 2017
Power Electronics: Speed & Efficiency are Key Speed enables small size, low-cost and faster charging Efficiency enables energy savings With Silicon or Discrete GaN power devices, you can get one or the other With GaN power ICs, you get both at the same time with unequaled Speed & Efficiency 100x faster Shrink size, weight & cost Up to 5x Energy Savings 2
World s First AllGaN Power ICs Fastest, most efficient GaN Power FETs First & Fastest Integrated GaN Gate Drivers World s First AllGaN Power IC >20x faster than silicon >5x faster than cascoded GaN Proprietary design 15+ pending or issued patents >3x faster than any other gate driver Proprietary design 8+ pending patents Up to 40MHz switching, 5x higher density & 20% lower system cost 3
The Power of GaN Power ICs... Unequaled Speed & Efficiency Driver Circuits Power Devices Passive Components Switching Frequency Energy Efficiency Silicon 100kHz 85-90% Discrete GaN 500kHz 88-92% GaN Power ICs 1-10MHz 90-95% 4
GaN Power IC Fast & Efficient No overshoots, No spikes, No oscillations, S-curve transitions, Zero Loss Turn-on (Soft switching) Zero Loss Turn-off (Integrated Gate Drive) 1MHz ZVS High Side Sync Rect Vds of Low Side FET Vgs of Low Side FET ZVS soft switching Zero Loss Turn-off Low Side Sync Rect 200ns/div 200 ns/div 5
Turn-off Loss (μ J) Speed & Integration Eliminate Turn-off Losses External drivers Just 1-2 nh of gate loop inductance can cause unintended turn-on Gate resistors reduce spikes but create additional losses Integrated GaN drivers (idrive ) Eliminate the problem Negligible turn-off losses Load Current (A) 6
GaN Power IC: Hi-Speed FET, Drivers & More Proprietary AllGaN technology Monolithic integration of GaN FET, GaN Driver, GaN Logic 650 V emode 20x lower drive loss than silicon (<35 mw at 1 MHz) Driver impedance matched to power device Very fast (prop delay and turn-on/off of 10-20 ns) Zero inductance turn-off loop High dv/dt immunity (200 V/ns) with control Digital input Complete layout flexibility QFN 5x6mm 10-30V D. Kinzer, S. Oliver Monolithic HV GaN Power ICs in IEEE PELS Power Electronics Magazine, vol. 3, no. 3, pp. 14-21, September 2016 7
Fast Chargers... going GaN Fast 3x Fast Charging with 50% Energy Savings Existing Si-based 15W AllGaN 2016 25W 2x Faster Charging AllGaN 2017 25W 3x Faster Charging Smartphones & Tablets 25W 5W Fast-charging Drones 100 khz Up to 6.5 W/in 3 88% 300-500 khz 11 W/in 3 >92% >1 MHz 17.5 W/in 3 >95% AR / VR & Wearables 2016: Navitas; 2017: Xiucheng Huang, "High Frequency GaN Characterization and Design Considerations," Ph.D Dissertation, Dept. Electr. Eng., Virginia Tech., Blacksburg, VA, USA, 2016. 8
45W Active Clamp Flyback & AllGaN Power ICs 15.7 mm 94.5% efficient at 220 V (94.2% at 120 V AC, 93.1% at 90 V AC ) 23.7 W/in 3 density (uncased) 15.7 mm profile For further details of ACF, please see APEC 2017 technical paper Active Clamp Flyback Using GaN Power IC for Power Adapter Applications, Xue, Zhang 9
45W CrCM ACF Operation Switch-node voltage (V SW ), SR FET voltage (V SR ), leakage current (i LK ) and magnetizing current (I Lm ) 120V AC, 0.2A load, F SW = 210kHz, Circulating Current minimized using Secondary Resonance For further details of ACF, please see APEC 2017 technical paper Active Clamp Flyback Using GaN Power IC for Power Adapter Applications, Xue, Zhang 10
Efficiency (%) 45 W ACF: High Efficiency, Cool Temperatures 95.0% 94.5% 94.0% 93.5% 93.0% 92.5% 92.0% 91.5% 91.0% 90.5% 90.0% 80 100 120 140 160 180 200 220 240 Input Voltage (V AC ) For further details of ACF, please see APEC 2017 technical paper Active Clamp Flyback Using GaN Power IC for Power Adapter Applications, Xue, Zhang 11
AllGaN 2017: 1 MHz, 25 W ACF in 5W Size Single-stage EMI Navitas GaN Power ICs Planar transformer DSP (for prototype) Xiucheng Huang, "High Frequency GaN Characterization and Design Considerations," Ph.D Dissertation, Dept. Electr. Eng., Virginia Tech., Blacksburg, VA, USA, 2016. 12
Efficiency MHz+ 25 W ACF Prototype Performance F SW =1.5MHz Efficiency vs. Load V GS (3 V/div) 100 ns/div 0.94 0.93 0.92 0.91 0.921 0.933 0.931 1.5MHz 0.9 0.89 V DS (50 V/div) 0.88 0.87 0.876 2.6MHz 0 0.25 0.5 0.75 1 Load Current (A) * Exclude bridge and EMI filter loss Xiucheng Huang, "High Frequency GaN Characterization and Design Considerations," Ph.D Dissertation, Dept. Electr. Eng., Virginia Tech., Blacksburg, VA, USA, 2016. 13
GaN Power ICs enable Hi-Density Adapters 3x Higher Density with 50% Energy Savings Existing Si-based 150W AllGaN 2016 150W AllGaN 2017 150W 2x Higher Density 3x Higher Density Ultra-thin LED TV All-in-One PCs 100 khz 5-10 W/in 3 88% 300-500 khz 17 W/in 3 >93% >1 MHz 26.5 W/in 3 >95% Next-Gen Gaming Consoles 2016: Navitas + On Semiconductor; 2017: Xiucheng Huang, "High Frequency GaN Characterization and Design Considerations," Ph.D Dissertation, Dept. Electr. Eng., Virginia Tech., Blacksburg, VA, USA, 2016. 14
150 W, 19 V: GaN Power IC vs. Si Part# Technology V Pack R DS(ON) (typ. mω) Q G (typ. nc) C OSS (er) (typ. pf) R x Q G (mω.nc) R x C OSS (er) (mω.pf) STL34N65M5 Si FET 650 8x8 99 62.5 63 6,187 6,237 IPL60R199CP Si FET 600 8x8 180 32 69 5,760 12,420 IPL60R299CP Si FET 600 8x8 270 22 46 5,940 12,420 NV6115 GaN Power IC 650 5x6 160 2.5 30 400 4,800 NV6117 GaN Power IC 650 5x6 110 4 45 440 4,950 GaN Benefit 14x 1.5-2.5x Navitas GaN Power ICs (5x6mm QFN) PFC = 1x NV6117, LLC = 2x NV6115 Si FETs (8x8mm QFN) a) PFC = 1x IPL60R299CP, LLC = 2x IPL60R299CP b) PFC = 1x IPL60R199CP, LLC = 2x IPL60R299CP For further details of the 150 W, 21 W/in3 board, please see APEC 2017 Industry Session State-of-the-Art Mobile Charging: Topologies, Technologies and Performance (Mobile Applications) 15
Efficiency [%] Efficiency (%) Frequency-related Loss Kills Si PFC = free-running 63-200 khz, LLC = 300 khz 96 94 92 90 GaN PFC = 110mΩ LLC = 160mΩ 220V 120V 90V +5% 220V 120V +4% 95% 94% 93% 92% 220V 120V 90V 88 90V 91% 86 84 Si #1 PFC = 270mΩ LLC = 270mΩ 90% 89% 82 80 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 Output Power [W] Efficiency vs. Output Power, AC Line Voltage 88% Powertrain GaN Si #1 Si #2 Si #3 PFC (mω) 110 270 180 99 LLC (mω) 160 270 270 270 Efficiency vs. AC Line Voltage (150W Full Load) 16
Efficiency AllGaN 2017: MHz 150W Totem-pole + LLC PFC V GS LLC GaN-based Power Density = 35 W/in 3 V SW (Best commercial benchmark = 12W/in3) I IN_AC 0.96 GaN based I Lr 200 ns/div 0.95 0.94 LLC V SW 0.93 0.92 State-of-the-art (Si) V GS 0.91 80 100 120 140 160 180 200 220 240 260 Input Voltage (V rms ) 17
1 MHz, 3.2 kw Server Supply 70 W/in 3 Multi-phase Totem-Pole CrCM + 2-phase Full-Bridge LLC Input : 220 V AC (47-63 Hz) Output : 48 V, 3.2 kw Target Size : 200 x 80 x 41.5 mm (uncased) PFC Beta version 650V GaN Power ICs Target Frequency: PFC = Variable frequency interleaving (500 khz 1.5 MHz) LLC = Fixed-frequency interleaved 1 MHz Target Efficiency: PFC : >99% peak (1) LLC : >98% peak (2) (1) Achieved on Alpha prototype (2) Estimated LLC converter 650V GaN Power ICs 80V GaN FETs 18
Quasi-Square Wave PFC Full-range ZVS Operation Totem Pole Configuration Current Mode Control Constant ZVS current point Simple rule: only change the current reference waveforms V DC =385V V AC =240V/RMS R load =102ohm P load =1450W Zero Load Soft Start Full Load 1.45kW f sw (MHz) 2.0 1.5.1 f ( t 0.5 f ( t 0 f ( t 0 100% Load 50% Load 20% Load 1.0 0.55 0 0 t 0.5T L 19
AllGaN Achieves Over 99% PFC Efficiency 3 GaN in Parallel, Vdd=6V 9.5uH, 7 Turns, Litz 46/660 100 99.8 99.6 99.4 99.2 99 98.8 98.6 98.4 98.2 Efficiency at 385V/DC, 240V/AC fmax=1.2mhz fmax=0.85mhz fmax=1.6mhz 0 200 400 600 800 1000 1200 1400 1600 Power(W) 20
Wireless Power... Accelerated Existing Silicon-based multi-stage wireless power AC-DC Adapter 88% Efficiency DC-DC 94% Efficiency Power Amplifier 93% Efficiency Wireless Transfer 90% Efficiency Multi-stage Efficiency: 77% GaN-enabled single stage: 90% Single-Stage Amplifier 90% Efficiency 650V GaN Power ICs 3-stages integrated in 1-stage 6.78MHz Operation High-Efficiency 20% lower system cost 3x faster charging 21
AC-RF Single Stage, Efficient & Cost-effective 400V Phase-shifted Full Bridge with ZVS Coupled Inductors 47-63 Hz AC Input 6.78 MHz Output Direct to Transmitter Antenna Meets Key System Requirements: Constant output current vs. load reactance AC EMI GaN Phase-Shift vs. Load For further details, please see APEC 2017 technical paper Single-Stage 6.78 MHz Power-Amplifier Design Using High-Voltage GaN Power ICs for Wireless Charging Application, Xue, Zhang 22
EFFICIENCY (%, 110V AC ) Cool AllGaN, No Chance for Silicon Efficiency from AC line to Transmitter Coil 95% 90% 85% 80% 75% Device Speed ZVS Current-Induced Loss 70% 10 20 30 40 50 60 OUTPUT POWER [W] 50W Prototype Board: a) Significant potential for further integration (control & GaN Power IC) b) Thermal performance (50W): Max GaN Power IC T CASE = 53 C 23
27 MHz, 40 MHz Class Phi-2 DC/AC converter 50% less loss than RF Si 16x smaller package Air-core inductors Minimal FET loss Negligible gate drive loss Technology V Pack (mm) F SW (MHz) Eff. (%) Power (W) 27.12MHz, φ2 Inverter, V DS of GaN RF Si (ARF521) 500 M174 22x22 27.12 91% 150 20ns/div, 150V/div 650 QFN 5x6 27.12 96% 150 40.00 93% 115 24
GaN Power ICs at 1 MHz+: Topologies, Technologies and Performance PSMA Industry Session, Semiconductors Dan Kinzer, CTO/COO dan.kinzer@navitassemi.com March 2017