STPSC10H065-Y. Automotive 650 V power Schottky silicon carbide diode. Description. Features

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STPSC1H65-Y Automotive 65 V power Schottky silicon carbide diode Datasheet - production data Features A K K K A A K NC TO-22AC D²PAK AEC-Q11 qualified No or negligible reverse recovery Switching behavior independent of temperature Dedicated to PFC applications High forward surge capability PPAP capable ECOPACK 2 compliant component Description The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 65 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC applications, this ST SiC diode will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases. Symbol IF(AV) VRRM Table 1: Device summary Value 1 A 65 V Tj (max.) 175 C February 217 DocID26618 Rev 4 1/11 This is information on a product in full production. www.st.com

Characteristics STPSC1H65-Y 1 Characteristics Table 2: Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage Tj = -4 to +175 C 65 V IF(RMS) Forward rms current 22 A IF(AV) Average forward current TC = 135 C (1), DC 1 A IFRM IFSM Repetitive peak forward current Surge non repetitive forward current Tc =135 C, Tj = 175 C, δ =.1 41 A tp = 1 ms sinusoidal, Tc = 25 C 9 tp = 1 ms sinusoidal, Tc = 125 C 8 tp = 1 µs square, Tc = 25 C 47 Tstg Storage temperature range -55 to +175 C Tj Operating junction temperature (2) -4 to +175 C Notes: (1) Value based on Rth(j-c) max. (2) (dptot/dtj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink. A Table 3: Thermal parameters Value Symbol Parameter Unit Typ. Max. Rth(j-c) Junction to case 1.25 1.5 C/W Table 4: Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit IR (1) VF (2) Reverse leakage current Forward voltage drop Notes: (1) Pulse test: tp = 1 ms, δ < 2% (2) Pulse test: tp = 5 µs, δ < 2% Tj = 25 C - 9 1 VR = VRRM Tj = 15 C - 85 425 Tj = 25 C - 1.56 1.75 IF = 1 A Tj = 15 C - 1.98 2.5 µa V To evaluate the conduction losses, use the following equation: P = 1.35 x IF(AV) +.115 x IF 2 (RMS) 2/11 DocID26618 Rev 4

STPSC1H65-Y Table 5: Dynamic electrical characteristics Characteristics Symbol Parameter Test conditions Typ. Unit QCj (1) Total capacitive charge VR = 4 V 28.5 nc Cj Notes: Total capacitance (1) V Most accurate value for the capacitive charge: Q cj = OUT C J (V R ) dv R VR = V, Tc = 25 C, F = 1 MHz 48 VR = 4 V, Tc = 25 C, F = 1 MHz 48 pf DocID26618 Rev 4 3/11

Characteristics 1.1 Characteristics (curves) Figure 1: Forward voltage drop versus forward current (typical values, low level) 2 18 16 14 12 1 8 6 4 I F (A) Pulse test : t p= 5µs T a=25 C T a=1 C T a=15 C T a=175 C 2 VF(V)..5 1. 1.5 2. 2.5 3. 3.5 STPSC1H65-Y Figure 2: Forward voltage drop versus forward current (typical values, high level) 1 9 8 7 6 5 4 3 2 I F (A) Pulse test : t p= 5µs T a=1 C T a=15 C T a=25 C 1 T a=175 C VF(V) 1 2 3 4 5 6 7 8 Figure 3: Reverse leakage current versus reverse voltage applied (typical values) Figure 4: Peak forward current versus case temperature 1.E+3 I R (µa) 1.E+2 T j =175 C 1.E+1 T j =15 C 1.E+ 1.E-1 T j =25 C VR(V) 1.E-2 5 1 15 2 25 3 35 4 45 5 55 6 65 Figure 5: Junction capacitance versus reverse voltage applied (typical values) Figure 6: Relative variation of thermal impedance junction to case versus pulse duration 5 45 4 35 3 25 2 15 1 5 C j (pf) V R (V) F = 1 MHz V OSC = 3 mv RMS T j = 25 C.1 1. 1. 1. 1. Z th(j-c) /R th(j-c) 1..9.8.7.6.5.4.3.2.1 Single pulse tp(s). 1.E-5 1.E-4 1.E-3 1.E-2 1.E-1 1.E+ 4/11 DocID26618 Rev 4

STPSC1H65-Y Figure 7: Non-repetitive peak surge forward current versus pulse duration (sinusoidal waveform) Characteristics Figure 8: Total capacitive charges versus reverse voltage applied (typical values) I FSM (A) 1.E+3 32 28 Q cj (nc) T a =25 C 24 1.E+2 T a =125 C 2 16 12 8 t p (s) 1.E+1 1.E-5 1.E-4 1.E-3 1.E-2 4 V R (V) 5 1 15 2 25 3 35 4 Figure 9: Thermal resistance junction to ambient versus copper surface under tab for D²PAK package (typical values) 8 7 R th(j-a) ( C/W) 6 5 4 3 2 Epoxy printed board FR4, e CU = 35 µm 1 S Cu(cm²) 5 1 15 2 25 3 35 4 DocID26618 Rev 4 5/11

Package information STPSC1H65-Y 2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Epoxy meets UL94, V Cooling method: by conduction (C) Recommended torque value:.55 N m Maximum torque value:.7 N m 2.1 D²PAK package information Figure 1: D²PAK package outline 6/11 DocID26618 Rev 4

STPSC1H65-Y Package information Table 6: D²PAK package mechanical data Dimensions Ref. Millimeters Inches Min. Typ. Max. Min. Typ. Max. A 4.4 4.6.173.181 A1.3.23.1.9 b.7.93.28.37 b2 1.14 1.7.45.67 c.45.6.18.24 c2 1.23 1.36.48.53 D 8.95 9.35.352.368 D1 7.5 7.75 8..295.35.315 D2 1.1 1.3 1.5.43.51.6 E 1 1.4.394.49 E1 8.5 8.7 8.9.335.343.346 E2 6.85 7.5 7.25.266.278.282 e 2.54.1 e1 4.88 5.28.19.25 H 15 15.85.591.624 J1 2.49 2.69.97.16 L 2.29 2.79.9.11 L1 1.27 1.4.49.55 L2 1.3 1.75.5.69 R.4.15 V2 8 8 Figure 11: D²PAK recommended footprint (dimensions are in mm) DocID26618 Rev 4 7/11

Package information 2.2 TO-22AC package information Figure 12: TO-22AC package outline STPSC1H65-Y 8/11 DocID26618 Rev 4

STPSC1H65-Y Package information Table 7: TO-22AC package mechanical data Dimensions Ref. Millimeters Inches Min. Max. Min. Max. A 4.4 4.6.173.181 C 1.23 1.32.48.51 D 2.4 2.72.94.17 E.49.7.19.27 F.61.88.24.34 F1 1.14 1.7.44.66 G 4.95 5.15.194.22 H2 1. 1.4.393.49 L2 16.4 typ..645 typ. L4 13. 14..511.551 L5 2.65 2.95.14.116 L6 15.25 15.75.6.62 L7 6.2 6.6.244.259 L9 3.5 3.93.137.154 M 2.6 typ..12 typ. Diam 3.75 3.85.147.151 DocID26618 Rev 4 9/11

Ordering information STPSC1H65-Y 3 Ordering information Table 8: Ordering information Order code Marking Package Weight Base qty. Delivery mode STPSC1H65GY-TR PSC1H65GY D²PAK 1.48 g 1 Tape and reel STPSC1H65DY PSC1H65DY TO-22AC 1.86 g 5 Tube 4 Revision history Table 9: Document revision history Date Revision Changes 26-Jun-214 1 First issue. 19-Sep-214 2 Updated Table 8. 24-Sep-215 3 Added device in D2PAK. Updated the entire document accordingly. 6-Feb-217 4 Updated D²PAK package information section. 1/11 DocID26618 Rev 4

STPSC1H65-Y IMPORTANT NOTICE PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 217 STMicroelectronics All rights reserved DocID26618 Rev 4 11/11