l Surface Mount (IRFR2407) l Straight Lead (IRFU2407) l Advanced Process Technology l Dynamic dv/dt Rating l Fast Switching l Fully Avalanche Rated Description Seventh Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. G IRFR2407 IRFU2407 HEXFET Power MOSFET D S PD -93862 V DSS = 75V R DS(on) = 0.026Ω I D = 42A The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for throughhole mounting applications. Power dissipation levels D-Pak I-Pak up to.5 watts are possible in typical surface mount IRFR2407 IRFU2407 applications. Absolute Maximum Ratings Parameter Max. Units I D @ T C = 25 C Continuous Drain Current, V GS @ V 42 I D @ T C = 0 C Continuous Drain Current, V GS @ V 29 A I DM Pulsed Drain Current 70 P D @T C = 25 C Power Dissipation W Linear Derating Factor 0.7 W/ C V GS Gate-to-Source Voltage ± 20 V E AS Single Pulse Avalanche Energy 30 mj I AR Avalanche Current 25 A E AR Repetitive Avalanche Energy mj dv/dt Peak Diode Recovery dv/dt ƒ 5.0 V/ns T J Operating Junction and -55 to 75 T STG Storage Temperature Range C Soldering Temperature, for seconds 300 (.6mm from case ) Mounting Torque, 6-32 or M3 screw lbf in (.N m) Thermal Resistance Parameter Typ. Max. Units R θjc Junction-to-Case.4 R θja Junction-to-Ambient (PCB mount)* 50 C/W R θja Junction-to-Ambient * When mounted on " square PCB (FR-4 or G- Material). For recommended footprint and soldering techniques refer to application note #AN-994 www.irf.com 3//00
Electrical Characteristics @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 75 V V GS = 0V, I D = 250µA V (BR)DSS / T J Breakdown Voltage Temp. Coefficient 0.078 V/ C Reference to 25 C, I D = ma R DS(on) Static Drain-to-Source On-Resistance 0.028 0.026 Ω V GS = V, I D = 25A V GS(th) Gate Threshold Voltage 2.0 4.0 V V DS = V, I D = 250µA g fs Forward Transconductance 27 S V DS = 25V, I D = 25A I DSS Drain-to-Source Leakage Current 20 V µa DS = 75V, V GS = 0V 250 V DS = 60V, V GS = 0V, T J = 50 C I GSS Gate-to-Source Forward Leakage 200 V GS = 20V na Gate-to-Source Reverse Leakage -200 V GS = -20V Q g Total Gate Charge 74 I D = 25A Q gs Gate-to-Source Charge 3 9 nc V DS = 60V Q gd Gate-to-Drain ("Miller") Charge 22 34 V GS = V t d(on) Turn-On Delay Time 6 V DD = 38V t r Rise Time 90 I D = 25A ns t d(off) Turn-Off Delay Time 65 R G = 6.8Ω t f Fall Time 66 V GS = V Between lead, D L D Internal Drain Inductance 4.5 6mm (0.25in.) nh G from package L S Internal Source Inductance 7.5 and center of die contact S C iss Input Capacitance 2400 V GS = 0V C oss Output Capacitance 340 pf V DS = 25V C rss Reverse Transfer Capacitance 77 ƒ =.0MHz, See Fig. 5 C oss Output Capacitance 5700 V GS = 0V, V DS =.0V, ƒ =.0MHz C oss Output Capacitance 220 V GS = 0V, V DS = 60V, ƒ =.0MHz C oss eff. Effective Output Capacitance 220 V GS = 0V, V DS = 0V to 60V Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I S Continuous Source Current MOSFET symbol 42 (Body Diode) showing the A G I SM Pulsed Source Current integral reverse 70 (Body Diode) p-n junction diode. S V SD Diode Forward Voltage.3 V T J = 25 C, I S = 25A, V GS = 0V t rr Reverse Recovery Time 0 50 ns T J = 25 C, I F = 25A Q rr Reverse RecoveryCharge 400 600 nc di/dt = 0A/µs t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L S L D ) Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25 C, L = 0.42mH R G = 25Ω, I AS = 25A. ƒ I SD 25A, di/dt 290A/µs, V DD V (BR)DSS, T J 75 C Pulse width 300µs; duty cycle 2%. C oss eff. is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 30A 2 www.irf.com
I D, Drain-to-Source Current (A) 00 0 VGS TOP 5V V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V I D, Drain-to-Source Current (A) 00 0 VGS TOP 5V V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V 20µs PULSE WIDTH T J = 25 C 0. 0 V DS, Drain-to-Source Voltage (V) 20µs PULSE WIDTH T J = 75 C 0. 0 V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics I D, Drain-to-Source Current (A) 00 0 T J = 75 C T J = 25 C V DS= 25V 20µs PULSE WIDTH 4.0 5.0 6.0 7.0 8.0 9.0 V GS, Gate-to-Source Voltage (V) R DS(on), Drain-to-Source On Resistance (Normalized) 3.0 I D = 42A 2.5 2.0.5.0 0.5 V GS = V 0.0-60 -40-20 0 20 40 60 80 0 20 40 60 80 T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3
C, Capacitance(pF) IRFR/U2407 4000 3000 2000 00 0 V GS = 0V, f = MHZ C iss = C gs C gd, C ds SHORTED C rss = C gd C oss = C ds C gd Ciss Coss Crss 0 V DS, Drain-to-Source Voltage (V) V GS, Gate-to-Source Voltage (V) 20 6 2 8 4 I = D 25A V DS = 60V V DS = 37V V DS = 5V FOR TEST CIRCUIT SEE FIGURE 3 0 0 20 40 60 80 0 20 Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 00 00 OPERATION IN THIS AREA LIMITED BY R DS(on) I SD, Reverse Drain Current (A) 0 T J = 75 C T J = 25 C V GS = 0 V 0.4 0.8.2.6 2.0 2.4 V SD,Source-to-Drain Voltage (V) I D, Drain Current (A) 0 us 0us ms TC = 25 C TJ = 75 C Single Pulse ms 0 00 V DS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com
50 LIMITED BY PACKAGE V DS R D 40 R G V GS D.U.T. I D, Drain Current (A) 30 20 V GS Pulse Width µs Duty Factor 0. % Fig a. Switching Time Test Circuit - V DD V DS 90% 0 25 50 75 0 25 50 75 T, Case Temperature ( C C) Fig 9. Maximum Drain Current Vs. Case Temperature % V GS t d(on) t r t d(off) t f Fig b. Switching Time Waveforms Thermal Response (Z thjc ) 0. D = 0.50 0.20 0. 0.05 0.02 0.0 SINGLE PULSE (THERMAL RESPONSE) Notes:. Duty factor D = t / t 2 2. Peak T J = P DM x Z thjc TC 0.0 0.0000 0.000 0.00 0.0 0. t, Rectangular Pulse Duration (sec) PDM t t2 Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5
R G V DS 20V tp Fig 2a. Unclamped Inductive Test Circuit tp L D.U.T I AS 0.0Ω V (BR)DSS 5V DRIVER - V DD A E AS, Single Pulse Avalanche Energy (mj) 240 200 60 20 80 40 TOP BOTTOM I D A 8A 25A 0 25 50 75 0 25 50 75 Starting T, Junction Temperature ( J C) Fig 2c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 2b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. Q G 50KΩ Q GS Q GD 2V.2µF.3µF D.U.T. V - DS V G V GS 3mA Charge I G I D Current Sampling Resistors Fig 3a. Basic Gate Charge Waveform Fig 3b. Gate Charge Test Circuit 6 www.irf.com
Peak Diode Recovery dv/dt Test Circuit D.U.T ƒ - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - - R G dv/dt controlled by R G Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test - V DD Driver Gate Drive Period P.W. D = P.W. Period V GS =V * D.U.T. I SD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt V DD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% I SD * V GS = 5V for Logic Level Devices Fig 4. For N-Channel HEXFET Power MOSFETs www.irf.com 7
D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) 5.46 (.25) 5.2 (.205) 6.73 (.265) 6.35 (.250) - A -.27 (.050) 0.88 (.035) 2.38 (.094) 2.9 (.086).4 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.08) 4.02 (.040).64 (.025) 2 3 6.22 (.245) 5.97 (.235).42 (.4) 9.40 (.370) 6.45 (.245) 5.68 (.224) LEAD ASSIGNMENTS - G A TE.52 (.060).5 (.045) 2X.4 (.045) 0.76 (.030) 3X - B - 0.89 (.035) 0.64 (.025) 0.25 (.0) M A M B 0.5 (.020) M IN. 0.58 (.023) 0.46 (.08) 2 - D R A IN 3 - S O U R CE 4 - D R A IN 2.28 (.090) 4.57 (.80) NOTES: DIMENSIONING & TOLERANCING PER ANSI Y4.5M, 982. 2 CONTROLLING DIMENSION : INCH. 3 C O N FO R M S TO JE D E C O U TLIN E TO -252 AA. 4 DIMENSIONS SHOW N ARE BEFORE SOLDER DIP, SOLDER DIP MAX. 0.6 (.006). D-Pak (TO-252AA) Part Marking Information 8 www.irf.com
I-Pak (TO-25AA) Package Outline Dimensions are shown in millimeters (inches) 5.46 (.25) 5.2 (.205) 6.73 (.265) 6.35 (.250) - A - 4.27 (.050) 0.88 (.035) 2.38 (.094) 2.9 (.086) 0.58 (.023) 0.46 (.08) LEAD ASSIGNMENTS - G ATE.52 (.060).5 (.045) 6.22 (.245) 5.97 (.235) 6.45 (.245) 5.68 (.224) 2 - D RA IN 3 - SOURCE 4 - D RA IN 2 3 - B - 2.28 (.090).9 (.075) 9.65 (.380) 8.89 (.350) NOTES: DIMENSIONING & TOLERANCING PER ANSI Y4.5M, 982. 2 CONTROLLING DIMENSION : INCH. 3 C O NF O R MS TO JEDE C O UTLINE TO -25 2AA. 4 D IM EN SIO N S S HO W N A R E BE FO RE SO L DE R D IP, SOLDER DIP MAX. 0.6 (.006). 3X.4 (.045) 0.76 (.030) 2.28 (.090) 2X 3X 0.89 (.035) 0.64 (.025) 0.25 (.0 ) M A M B.4 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.08) I-Pak (TO-25AA) Part Marking Information www.irf.com 9
D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR TRL 6.3 (.64 ) 5.7 (.69 ) 6.3 (.64 ) 5.7 (.69 ) 2. (.476 ).9 (.469 ) FEED DIRECTION 8. (.38 ) 7.9 (.32 ) FEED DIRECTION NOTES :. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-48 & EIA-54. 3 INC H NOTES :. OUTLINE CONFORMS TO EIA-48. 6 mm IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (3) 252-75 IR EUROPEAN REGIONAL CENTER: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: 44 (0)20 8645 8000 IR CANADA: 5 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 57, 6350 Bad Homburg Tel: 49 (0) 672 96590 IR ITALY: Via Liguria 49, 07 Borgaro, Torino Tel: 39 0 45 0 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 7 Tel: 8 (0)3 3983 0086 IR SOUTHEAST ASIA: Kim Seng Promenade, Great World City West Tower, 3-, Singapore 237994 Tel: 65 (0)838 4630 IR TAIWAN:6 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 3/00 www.irf.com
Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/