Power Rectifier Diodes (T-Modules), 2200 V, 20 A

Similar documents
VS-T40HF..., VS-T70HF..., VS-T85HF..., VS-T110HF... Series Power Rectifiers Diodes (T-Modules), 40 A to 110 A

Standard Recovery Diodes, 400 A

Standard Recovery Diodes (Stud Version), 12 A

Standard Diodes (Super MAGN-A-PAK Power Modules), 600 A

Standard Recovery Diodes, Generation 2 DO-5 (Stud Version), 80 A

Standard Recovery Diodes, Generation 2 DO-5 (DO-203AB) (Stud Version), 80 A

Standard Recovery Diodes, (Stud Version), 200 A

Power Rectifier Diodes (T-Modules), 40 A to 110 A

Standard Recovery Diodes Generation 2 DO-5 (DO-203AB) (Stud Version), 95 A

Standard Recovery Diodes, (Stud Version), 400 A

Standard Recovery Diodes (Stud Version), 300 A

VS-85HF(R), VS-86HF(R), VS-87HF(R), VS-88HF(R) Series Standard Recovery Diodes, (Stud Version), 85 A

Standard Recovery Diodes, (Stud Version), 300 A

VS-VSKD91.., VS-VSKC91.., VS-VSKJ91.., VS-VSKE91.. ADD-A-PAK Gen 7 Power Modules Standard Diodes, 100 A

Standard Recovery Diodes (Stud Version), 400 A

Standard Recovery Diodes (Stud Version), 150 A

Three phase bridge. (Power Module), 200 A

HEXFRED Ultrafast Diodes, 100 A (INT-A-PAK Power Modules)

Single phase bridge. (Power Modules), 25 A / 35 A

Insulated Single Phase Hyperfast Bridge (Power Modules), 60 A

Standard Recovery Diodes, (Hockey PUK Version), 800 A

Single phase bridge. (Power Modules), 25 A/35 A

VS-1N1183, VS-1N3765, VS-1N1183A, VS-1N2128A Series Power Silicon Rectifier Diodes, (Stud Version), 35 A, 40 A, 60 A

Standard Recovery Diodes, (Stud Version), 40 A

Three Phase Bridge, 160 A (Power Modules)

HEXFRED Ultrafast Diodes, 300 A (INT-A-PAK Power Modules)

Three Phase Bridge, 300 A (Power Modules)

Standard Recovery Diodes (Stud Version), 70 A

VS-1N1183, VS-1N3765, VS-1N1183A, VS-1N2128A Series Power Silicon Rectifier Diodes, (Stud Version), 35 A, 40 A, 60 A

Standard Recovery Diodes, (Stud Version), 85 A

Fast Recovery Diodes (Stud Version), 40 A, 70 A, 85 A

Three Phase Bridge (Power Modules), 25 A to 35 A

Standard Recovery Diodes (Stud Version), 150 A

High Voltage, Input Rectifier Diode, 20 A

Fast Recovery Diodes (Stud Version), 6 A, 12 A, 16 A

Single phase bridge. (Power Modules), 25 A, 35 A

Power Modules, Passivated Assembled Circuit Elements, 25 A

Power Modules, Passivated Assembled Circuit Elements, 40 A

HEXFRED Ultrafast Diodes, 300 A (INT-A-PAK Power Modules)

FRED Pt Gen 4 Single Ultrafast Diode, 500 A (INT-A-PAK Power Modules)

Medium Power Silicon Rectifier Diodes, (Stud Version), 12 A

Single Phase Bridge Rectifier, 2 A

Three Phase Bridge (Power Modules), 25 A to 35 A

VS-VSKD91.., VS-VSKC91.., VS-VSKJ91.., VS-VSKE91.. Series ADD-A-PAK Generation VII Power Modules Standard Diodes, 100 A

Thyristor / Diode (Super MAGN-A-PAK Power Modules), 570 A

Standard Recovery Diodes, (Hockey PUK Version), 2100 A

Thyristor/Thyristor (MAGN-A-PAK Power Modules), 320 A

Three Phase Bridge, 130 A to 160 A (Power Modules)

Standard Recovery Diodes, (Hockey PUK Version), 3000 A

HEXFRED Ultrafast Soft Recovery Diode, 140 A

High Performance Schottky Rectifier, 240 A

High Voltage, Input Rectifier Diode, 10 A

Standard Recovery Diodes, (Stud Version), 85 A

HEXFRED Ultrafast Soft Recovery Diode, 220 A

Single Phase Rectifier Bridge, 1.2 A

Single Phase Rectifier Bridge, 3 A, 6 A

Phase Control Thyristor RMS SCRs, 25 A, 35 A

Phase Control Thyristors (Stud Version), 110 A

AAP Gen 7 (TO-240AA) Power Modules Schottky Rectifier, 200 A

Standard Recovery Diodes (Stud Version), 150 A

Standard Recovery Diodes (Stud Version), 150 A

Three Phase Bridge (Power Modules), 25/35 A

Insulated Gen 2 Schottky Rectifier Module, 300 A

Standard Recovery Diodes, (Hockey PUK Version), 3800 A

Input Rectifier Diode, 80 A

Ultrafast Soft Recovery Diode, 150 A FRED Pt

High Voltage Surface Mountable Input Rectifier Diode, 8 A

Fast Recovery Diodes (Stud Version), 6 A, 12 A, 16 A

High Performance Schottky Rectifier, 400 A

Single Phase Rectifier Bridge, 1.9 A

High Performance Schottky Rectifier, 100 A

High Performance Schottky Rectifier, 100 A

Input Rectifier Diode, 60 A

Medium Power Phase Control Thyristors (Stud Version), 16 A

Single Phase Bridge (Power Modules), 25/35 A

Insulated Ultrafast Rectifier Module, 230 A

High Performance Schottky Rectifier, 100 A

Inverter Grade Thyristors (Stud Version), 85 A

Three Phase Bridge (Power Module), 45 A to 100 A

Medium Power Phase Control Thyristors (Stud Version), 50 A

Surface Mount Fast Soft Recovery Rectifier Diode, 10 A

Insulated Ultrafast Rectifier Module, 280 A

Ultrafast Soft Recovery Diode, 150 A FRED Pt

Fast Recovery Diodes (Hockey PUK Version), 920 A, 1050 A

Thyristor/Thyristor, 150 A (INT-A-PAK Power Module)

HEXFRED Ultrafast Soft Recovery Diode, 275 A

Insulated Ultrafast Rectifier Module, 210 A

Three Phase Bridge (Power Modules), 90/110 A

Insulated Hyperfast Rectifier Module, 280 A

Three Phase AC Switch (Power Modules), 50 A to 100 A

ADD-A-PAK Generation VII Power Modules Thyristor/Diode and Thyristor/Thyristor, 45 A/60 A

AAP Gen 7 (TO-240AA) Power Modules Thyristor/Thyristor, 105 A

SCR/SCR and SCR/Diode (MAGN-A-PAK Power Modules), 170 A, 250 A

High Performance Schottky Rectifier, 240 A

Insulated Ultrafast Rectifier Module, 280 A

VS-EBU15006-F4. FRED Pt Ultrafast Soft Recovery Diode, 150 A. Vishay Semiconductors. FEATURES BENEFITS PRODUCT SUMMARY

Ultrafast Rectifier, 2 x 30 A FRED Pt

Phase Control Thyristors (Stud Version), 300 A

High Performance Schottky Rectifier, 200 A

VS-VSKT91.., VS-VSKH91.., VS-VSKL91.., VS-VSKN91.. Series

Transcription:

Power Rectifier Diodes (T-Modules), 2200 V, 20 A FEATURES Electrically isolated base plate 2200 V RRM Industrial standard packaging UL approved file E78996 Simplified mechanical designs, rapid assembly Large creepage distances D-55 (T-module) PRIMARY CHARACTERISTICS I F(AV) 20 A Type Modules - diode, high voltage V RRM 2200 V Package D-55 (T-module) Circuit configuration Single diode Designed and qualified for industrial level Material categorization: for definitions of compliance please see www.vishay.com/doc?9992 DESCRIPTION / APPLICATIONS These series of D-55 (T-modules) use standard recovery power rectifier diodes. The semiconductors are electrically isolated from the metal base, allowing common heatsink and compact assembly to be built. Applications include power supplies, battery charges, welders, motor controls, and solar panel application. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS 20 A I F(AV) T C 85 C I F(RMS) 3 50 Hz 450 A I FSM 60 Hz 470 I 2 t 50 Hz 5 60 Hz 920 A 2 s I 2 t 25 A 2 s V RRM 2200 V T J -40 to +50 C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE V RRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V V RSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V I RRM MAXIMUM AT T J = 50 C ma 22 2200 2250 8 Revision: 05-Jan-8 Document Number: 94709 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?90

FORWARD CONDUCTION PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current at case temperature I F(AV) conduction, half sine wave 20 A 85 C Maximum RMS forward current I F(RMS) 3 A t = ms No voltage 450 Maximum peak, one-cycle forward, t = 8.3 ms reapplied 470 I non-repetitive surge current FSM A t = ms % V RRM 380 Sinusoidal half t = 8.3 ms reapplied 400 wave, initial t = ms No voltage 5 T J = T J maximum reapplied Maximum I 2 t for fusing I 2 t = 8.3 ms 920 t A 2 s t = ms % V RRM 75 t = 8.3 ms reapplied 650 Maximum I 2 t for fusing I 2 t t = 0. ms to ms, no voltage reapplied 25 A 2 s (6.7 % x x I Low level value of threshold voltage V F(AV) < I < x I F(AV) ), F(TO) 0.77 T J maximum V High level value of threshold voltage V F(TO)2 (I > x I F(AV) ), T J maximum 0.89 (6.7 % x x I Low level value of forward slope resistance r F(AV) < I < x I F(AV) ), f 8.5 T J maximum m High level value of forward slope resistance r f2 (I > x I F(AV) ), T J maximum 6.7 Maximum forward voltage drop V FM I FM = 60 A, T J = 25 C, t p = 400 μs square pulse Average power = V F(TO) x I F(AV) + r f x (I F(RMS) ) 2.50 V BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum peak reverse leakage current I RRM T J = 50 C 8 ma 50 Hz, circuit to base, all terminals shorted RMS isolation voltage V ISOL T J = 25 C, t = s 3500 V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction operating and storage temperature range T J, T Stg -40 to +50 C Maximum thermal resistance, junction to case R per junction thjc DC operation 2.53 K/W Maximum thermal resistance, case to heatsink R thcs Mounting surface smooth, flat and greased 0.2 Mounting torque, ± % to heatsink Non-lubricated M3.5 mounting screws ().3 ± % terminals threads M5 screw terminals 3 ± % Nm Approximate weight See dimensions - link at the end of datasheet 54 g Case style D-55 (T-module) Note () A mounting compound is recommended and the torque should be rechecked after a period of about 3 hours to allow for the spread of the compound R CONDUCTION PER JUNCTION SINUSOIDAL CONDUCTION AT T J MAXIMUM RECTANGULAR CONDUCTION AT T J MAXIMUM DEVICES UNITS 20 90 60 30 20 90 60 30 T20HF... 0.29 0.34 0.43 0.64. 0.20 0.35 0.47 0.67. K/W Note Table shows the increment of thermal resistance R thjc when devices operate at different conduction angles than DC Revision: 05-Jan-8 2 Document Number: 94709 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?90

Maximum Allowable Case Temperature ( C) 60 50 40 30 20 90 80 30 60 70 90 20 60 50 0 20 30 I F(AV) - Average Forward Current (A) Maximum Forward Power Loss (W) 90 80 70 60 50 40 30 20 30 60 20 90 RMS limit DC 0 0 20 30 40 50 60 70 80 Anode Forward Current (A) Fig. - Current Ratings Characteristics Fig. 4 - Forward Power Loss Characteristics Maximum Allowable Case Temperature ( C) 60 50 40 30 20 90 80 70 90 30 60 20 DC 60 0 20 30 I F(AV) - Average Forward Current (A) Fig. 2 - Current Ratings Characteristics Peak Half Sine Wave Forward Current (A) 500 450 400 350 300 250 200 50 at 60 Hz 0.0083 s at 50 Hz 0.0 s Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Maximum Forward Power Loss Characteristics 75 30 60 90 20 50 RMS limit 25 0 0 20 30 40 50 60 Anode Forward Current (A) Peak Half Sine Wave Forward Current (A) 620 520 420 320 220 20 No Voltage Reapplied Rated V RRM Reapplied 20 0.0 0. Pulse Train Duration (s) Fig. 3 - Forward Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current Revision: 05-Jan-8 3 Document Number: 94709 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?90

I F - Instantaneous Forward Current (A) 0 T J = 50 C T J = 25 C 0 0.5.5 2 2.5 3 3.5 4 4.5 5 V F - Forward Voltage Drop (V) Fig. 7 - Forward Voltage Drop Characteristics I R - Reverse Current (ma) T J = 50 C 0. 0.0 T J = 25 C 0.00 0 500 0 500 2000 2500 V R - Reverse Voltage (V) Fig. 8 - Typical Values of Reverse Current vs. Reverse Voltage Z thjc - Thermal Impedance Junction to Case ( C/W) 0. 0.0 0.000 0.00 0.0 0. t - Rectangular Pulse Duration (s) Fig. 9 - Maximum Thermal Impedance Z thjc Characteristics ORDERING INFORMATION TABLE Device code VS- T 20 HF 220 CIRCUIT CONFIGURATION - product 2 - Module type 3 4 5 2 3 4 5 - Current rating - Circuit configuration (see Circuit Configuration table) - Voltage code x = V RRM CIRCUIT DESCRIPTION CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING Single diode HF 2 Dimensions LINKS TO RELATED DOCUMENTS www.vishay.com/doc?9533 Revision: 05-Jan-8 4 Document Number: 94709 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?90

Outline Dimensions D-55 T-Module Diode Standard and Fast Recovery DIMENSIONS in millimeters (inches) 3 ± 0.5 (0.2 ± 0.02) 26 ± (.02 ± 0.04) 23.5 ± 0.5 (0.93 ± 0.02) 4 (.6) max. (0.43) 8 (0.7) 2 3.9 ± 0.05 (0.5 ± 0.002) 27 ± 0.3 (.06 ± 0.0) 5 (0.59) 8 ± 0.3 (0.3 ± 0.0) M5 30 (.8) Note = Anode 2 = Cathode Revision: 2-Apr-7 Document Number: 9533 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?90

Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. 207 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-7 Document Number: 90