N355, MJ955 Preferred Device Complementary Silicon Power Transistors...designed for generalpurpose switching and amplifier applications. DC Current Gain h FE = 7 @ I C = 4 Adc CollectorEmitter Saturation Voltage V CE(sat) = 1.1 (Max) @ I C = 4 Adc Excellent Safe Operating Area PbFree Package is Available MAXIMUM RATINGS Rating SymbolÎÎ Value ÎÎ Unit CollectorEmitter Voltage V CEO ÎÎ 6 ÎÎ Î CollectorEmitter Voltage V CER 7 ÎÎ CollectorBase Voltage ÎÎ V CB 1 EmitterBase Voltage V EB ÎÎ 7 ÎÎ Collector Current Continuous IC ÎÎ 15 ÎÎ Adc ÎÎ Base Current IB 7 Adc ÎÎ Total Power Dissipation @ T C = 5 C P D 115 W Derate above 5 C.657 W/ C Operating and Storage Junction Temperature Range T J, T stg 65 to + ÎÎ ÎÎ ÎÎ C THERMAL CHARACTERISTICS ÎÎ Characteristic Symbol Max Unit Î Thermal Resistance, JunctiontoCase R JC 1.5 C/W PD, POWER DISSIPATION (WATTS) Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 16 14 1 1 8 6 4 5 5 75 1 15 15 175 T C, CASE TEMPERATURE ( C) Figure 1. Power Derating 15 A POWER TRANSISTORS COMPLEMENTARY SILICON 6 V 115 W ORDERING INFORMATION Device Package Shipping N355 TO4AA 1 Units / Tray N355G MJ955 TO4AA (TO3) CASE 17 TO4AA MARKING DIAGRAM xxxx55 = Device Code xxxx= N355 or MJ955 A = Assembly Location YY = Year WW = Work Week x = 1,, or 3 TO4AA (PbFree) xxxx55 A YYWW 1 Units / Tubes N355H TO4AA 1 Units / Tray 1 Units / Tray For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD811/D. *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 4 April, 4 Rev. 4 1 Publication Order Number: N355/D
N355, MJ955 ELECTRICAL CHARACTERISTICS (T C = 5 C unless otherwise noted) Characteristic Symbol Min Max Unit *OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (Note 1) (I C = madc, I B = ) V CEO(sus) 6 CollectorEmitter Sustaining Voltage (Note 1) (I C = madc, R BE = 1 ) V CER(sus) 7 Î Collector Cutoff Current I Î (V CE = 3, I B = ) ÎÎ CEO Î.7 madc Î Collector Cutoff Current ÎÎ I CEX ÎÎ madc Î (V CE = 1, V BE(off) = 1.5 ) (V CE = 1, V BE(off) = 1.5, T C Î Î 1. = 15 C) 5. Emitter Cutoff Current I Î (V BE = 7., I C = ) ÎÎ EBO 5. madc *ON CHARACTERISTICS (Note 1) DC Current Gain (I C = 4. Adc, V CE = 4. ) (I C = 1 Adc, V CE = 4. ) h FE 5. 7 CollectorEmitter Saturation Voltage (I C = 4. Adc, I B = 4 madc) (I C = 1 Adc, I B = 3.3 Adc) 1.1 3. BaseEmitter On Voltage (I C = 4. Adc, V CE = 4. ) V BE(on) 1.5 SECOND BREAKDOWN Î Second Breakdown Collector Current with Base Forward Biased I s/b Î.87 Adc Î (V CE = 4, t = 1. s, Nonrepetitive) DYNAMIC CHARACTERISTICS Î Current Gain Bandwidth Product Î.5 MHz Î (I C =.5 Adc, V CE = 1, f = 1. MHz) Î *SmallSignal Current Gain ÎÎ h fe 15 Î 1 (I Î C = 1. Adc, V CE = 4., f = 1. khz) Î *SmallSignal Current Gain Cutoff Frequency (V CE = 4., I C ÎÎ f hfe 1 Î khz = 1. Adc, f = 1. khz) f T IC, COLLECTOR CURRENT (AMP) *Indicates Within JEDEC Registration. (N355) 1. Pulse Test: Pulse Width 3 s, Duty Cycle.%. 1 6 4 1.6.4. 6 dc 5 s 1 ms 5 s 1 4 6 V CE, COLLECTOREMITTER VOLTAGE (VOLTS) Figure. Active Region Safe Operating Area 5 s BONDING WIRE LIMIT THERMALLY LIMITED @ T C = 5 C (SINGLE PULSE) SECOND BREAKDOWN LIMIT There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I C V CE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure is based on T C = 5 C; T J(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 1% but must be derated for temperature according to Figure 1.
N355, MJ955 hfe, DC CURRENT GAIN 5 3 1 7 5 3 1 7. 5..1 V CE = 4. V T J = 15 C 5 C 55 C hfe, DC CURRENT GAIN V CE = 4. V T J = 15 C 1 5 C 7 55 C 5 3 1..3.5.7 1.. 3. 5. 7. 1.1..3.5.7 1.. 3. 5. 7. 1 Figure 3. DC Current Gain, N355 (NPN) Figure 4. DC Current Gain, MJ955 (PNP) VCE, COLLECTOREMITTER VOLTAGE (VOLTS)..8.4 5. I C = 1. A 4. A 8. A 1 5 1 5 1 5 I B, BASE CURRENT (ma) VCE, COLLECTOREMITTER VOLTAGE (VOLTS). I C = 1. A 4. A 8. A.8.4 5. 1 5 1 5 1 5 I B, BASE CURRENT (ma) Figure 5. Collector Saturation Region, N355 (NPN) Figure 6. Collector Saturation Region, MJ955 (PNP) V, VOLTAGE (VOLTS) 1.4 1..8 V BE(sat) @ I C /I B = 1.6 V BE @ V CE = 4. V.4. V CE(sat) @ I C /I B = 1.1..3.5.7 1.. 3. 5. 7. 1 I C, COLLECTOR CURRENT (AMPERES) Figure 7. On Voltages, N355 (NPN) V, VOLTAGE (VOLTS)..8.4.1 V BE(sat) @ I C /I B = 1 V BE @ V CE = 4. V V CE(sat) @ I C /I B = 1..3.5 1.. 3. 5. 1 Figure 8. On Voltages, MJ955 (PNP) 3
N355, MJ955 PACKAGE DIMENSIONS TO4 (TO3) CASE 17 ISSUE Z V H E 1 A N U C T SEATING PLANE D PL K.13 (.5) M T Q M Y M L G Y Q.13 (.5) M T B Y M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 198.. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO4AA OUTLINE SHALL APPLY. INCHES MILLIMETERS DIM MIN MAX MIN MAX A 1.55 REF 39.37 REF B 1.5 6.67 C.5.335 6.35 8.51 D.38.43.97 1.9 E.55.7 1.4 1.77 G.43 BSC 1.9 BSC H.15 BSC 5.46 BSC K.44.48 11.18 1.19 L.665 BSC 16.89 BSC N.83 1.8 Q.151.165 3.84 4.19 U 1.187 BSC 3.15 BSC V.131.188 3.33 4.77 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 817 USA Phone: 33675175 or 8344386 Toll Free USA/Canada Fax: 33675176 or 83443867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 889855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 91 Kamimeguro, Meguroku, Tokyo, Japan 15351 Phone: 8135773385 4 ON Semiconductor Website: Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. N355/D
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