MJE24G (NPN), MJE25G (PNP) Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and lowcurrent, highspeed switching applications. Features High CollectorEmitter Sustaining oltage High DC Current Gain Low CollectorEmitter Saturation oltage High Current Gain Bandwidth Product Annular Construction for Low Leakages These Devices are PbFree and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol alue Unit CollectorEmitter oltage CEO dc CollectorBase oltage CB dc EmitterBase oltage EB 7. dc Collector Current Continuous I C 4. Adc Collector Current Peak I CM 8. Adc Base Current I B 1. Adc Total Power Dissipation @ T C = 25 C Derate above 25 C Total Power Dissipation @ T A = 25 C Derate above 25 C Operating and Storage Junction Temperature Range P D 15 1 P D 1.5 12 W mw/ C W mw/ C T J, T stg 65 to +1 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, JunctiontoCase R JC 8.4 C/W Thermal Resistance, JunctiontoAmbient R JA 8.4 C/W 4. AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON OLTS, 15 WATTS BASE PNP COLLECTOR 2, 4 EMITTER 1 1 2 MARKING DIAGRAM YWW JE2xG BASE NPN COLLECTOR 2, 4 Y = Year WW = Work Week JE2x = Device Code x = 4 or 5 G = PbFree Package EMITTER 1 TO225 CASE 779 STYLE 1 ORDERING INFORMATION Device Package Shipping MJE24G TO225 (PbFree) Units/Box *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. MJE25G TO225 (PbFree) Units/Box Semiconductor Components Industries, LLC, 14 July, 14 Rev. 16 1 Publication Order Number: MJE24/D
ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining oltage (I C = madc, I B = ) CEO(sus) Collector Cutoff Current ( CB = dc, I E = ) ( CE = dc, I E =, T C = 125 C) I CBO.1.1 A ma Emitter Cutoff Current ( BE = 7. dc, I C = ) I EBO.1 Adc ON CHARACTERISTICS DC Current Gain (I C = madc, CE = 1. dc) (I C = 1. Adc, CE = 1. dc) h FE 4 15 18 CollectorEmitter Saturation oltage (I C = madc, I B = madc) (I C = 1. Adc, I B = madc) CE(sat)..6 BaseEmitter Saturation oltage (I C = 2. Adc, I B = madc) BaseEmitter On oltage (I C = madc, CE = 1. dc) DYNAMIC CHARACTERISTICS CurrentGain Bandwidth Product (I C = madc, CE = dc, f test = MHz) Output Capacitance ( CB = dc, I E =, f =.1 MHz) BE(sat) 1.8 BE(on) 1.5 f T 4 C ob MHz pf Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2
16 1.6 TC PD, POWER DISSIPATION (WATTS) 12 8..8 4..4 1.2 TA P D, POWER DISSIPATION (WATTS) 4 6 8 1 14 16 T, TEMPERATURE ( C) Figure 1. Power Derating +11-9. 25 s t r, t f ns DUTY CYCLE = 1.% 51 R B - 4 Figure 2. Switching Time Test Circuit D 1 CC + R C SCOPE R B and R C ARIED TO OBTAIN DESIRED CURRENT LEELS D 1 MUST BE FAST RECOERY TYPE, e.g.: 1N5825 USED ABOE I B ma MSD6 USED BELOW I B ma FOR PNP TEST CIRCUIT, REERSE ALL POLARITIES t, TIME (ns) 1K 5 2 NPN MJE24 PNP MJE25 t r t d I C, COLLECTOR CURRENT (AMPS) CC = I C /I B = 1.1.2..5.1.2..5 1 2 5 Figure. TurnOn Time r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1..7.5..2.1.7.5..2 D =.5.2.1.5.1 (SINGLE PULSE).2 JC (t) = r(t) JC JC = 8.4 C/W MAX D CURES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t 1 T J(pk) - T C = P (pk) JC (t) P (pk) t 1 t 2 DUTY CYCLE, D = t 1 /t 2.1.2.5.1.2.5 1. 2. t, TIME (ms) Figure 4. Thermal Response
IC, COLLECTOR CURRENT (AMP) 2. 1..5.2.1.5.2.1 1. 2. 1. ms dc T J = 1 C BONDING WIRE LIMITED THERMALLY LIMITED @ T C = 25 C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURES APPLY BELOW RATED CEO. 7. CE, COLLECTOR-EMITTER OLTAGE (OLTS) s ms MJE24/MJE25 s 7 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I C CE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 1 C; T C is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to % provided T J(pk) 1 C. T J(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Figure 5. Active Region Safe Operating Area t, TIME (ns) K 5K K 2K 1K t f t s CC = I C /I B = I B1 = I B2 NPN MJE24 PNP MJE25.1.2..5.1.2..5 1 2 5 I C, COLLECTOR CURRENT (AMPS) C, CAPACITANCE (pf) 7 1. 2. MJE24 (NPN) MJE25 (PNP). 7. C ib C ob R, REERSE OLTAGE (OLTS) 7 Figure 6. TurnOff Time Figure 7. Capacitance 4
NPN MJE24 PNP MJE25 hfe, DC CURRENT GAIN 7 7..4 T J = 1 C 25 C - 55 C.6.1.2.4.6 1. 2. 4. CE = 1. CE = 2. hfe, DC CURRENT GAIN 7 7. Figure 8. DC Current Gain T J = 1 C 25 C - 55 C. 2..4.6.1.2.4.6 1. 2. 4. CE = 1. CE = 2. 1.4 1.2 1.4 1.2, OLTAGE (OLTS) 1..8 BE(sat) @ I C /I B =.6 BE @ CE = 1..4 I C /I B =.2 CE(sat).4.6.1.2.4.6 1. 2. 4., OLTAGE (OLTS) 1. BE(sat) @ I C /I B =.8.6 BE @ CE = 1..4 I C /I B =.2 CE(sat).4.6.1.2.4.6 1. 2. 4. Figure 9. On oltages, TEMPERATURE COEFFICIENTS (m/ C) θ + 2.5 + 2. + 1.5 + 1. +.5 -.5-1. - 1.5-2. - 2.5.4 *APPLIES FOR I C /I B h FE/ * C FOR CE(sat) B FOR BE 25 C to 1 C 25 C to 1 C.6.1.2.4.6 1. 2. 4., TEMPERATURE COEFFICIENTS (m/ C) θ + 2.5 + 2. + 1.5 + 1. +.5 -.5-1. - 1.5-2. Figure. Temperature Coefficients *APPLIES FOR I C /I B h FE/ * C FOR CE(sat) B FOR BE 25 C to 1 C 25 C to 1 C - 2.5.4.6.1.2.4.6 1. 2. 4. 5
PACKAGE DIMENSIONS 4 TO225 CASE 779 ISSUE AC 1 2 2 1 FRONT IEW BACK IEW P Q E 1 2 L1 D A1 A PIN 4 BACKSIDE TAB L NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS.. NUMBER AND SHAPE OF LUGS OPTIONAL. MILLIMETERS DIM MIN MAX A 2.4. A1 1. 1. b.6.9 b2.51.88 c.9.6 D.6 11. E 7.4 7.8 e 2.4 2.54 L 14. 16.6 L1 1.27 2.54 P 2.9. Q.8 4. STYLE 1: PIN 1. EMITTER 2., 4. COLLECTOR. BASE 2X b2 2X e b c FRONT IEW SIDE IEW ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patentmarking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 516, Denver, Colorado 8217 USA Phone: 6752175 or 84486 Toll Free USA/Canada Fax: 6752176 or 844867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 82829855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 79 29 Japan Customer Focus Center Phone: 815817 6 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MJE24/D