Prof. Nuno Borges Carvalho

Similar documents
Prof. Nuno Borges Carvalho

GaN RF Testbed for Space Applications

Highly Linear GaN Class AB Power Amplifier Design

Design Of A Power Amplifier Based On Si-LDMOS For WiMAX At 3.5GHz

The need for Tower Mounted Amplifiers

High Power RF/Microwave Transistors, Pallets and Amplifiers from Integra Technologies, Inc.

EDCRO-200 is a stable ceramic based, sampling phase locked oscillator.

Thermal Design Techniques improve Solid State Power Amplifier Performance

Features. = +25 C, With 0/-5V Control, 50 Ohm System. Parameter Frequency Min. Typ. Max. Units

Advance Datasheet Revision: October Applications

Features. = +25 C, With 0/-5V Control, 50 Ohm System. Parameter Frequency Min. Typ. Max. Units

GaAs MMIC Power Amplifier

High-Efficiency L-Band 200-W GaN HEMT for Space Applications

The NaoSat nanosatellite platform for in-flight radiation testing. Jose A Carrasco CEO EMXYS Spain

GaAs, MMIC Fundamental Mixer, 2.5 GHz to 7.0 GHz HMC557A

RF2044A GENERAL PURPOSE AMPLIFIER

Product Description. Ordering Information. GaAs HBT GaAs MESFET InGaP HBT

Flip-Chip for MM-Wave and Broadband Packaging

Continuous Wave SSPAs. Version 1.6

Energy Efficient Transmitters for Future Wireless Applications

RF3375 GENERAL PURPOSE AMPLIFIER

Multi-function Phased Array Radars (MPAR)

6 GHz to 26 GHz, GaAs MMIC Fundamental Mixer HMC773ALC3B

ONE OF THE major issues in a power-amplifier design

A Review of Applications for High Power GaN HEMT Transistors and MMICs. Ray Pengelly and Chris Harris, Cree RF Products April, 2013

Modeling Nonlinear Memory Effects on the AM/AM, AM/PM and Two-Tone IMD in Microwave PA Circuits

Receiver Design. Prof. Tzong-Lin Wu EMC Laboratory Department of Electrical Engineering National Taiwan University 2011/2/21

RF Systems. Master degree in: Telecommunications Engineering Electronic Engineering. Teacher: Giuseppe Macchiarella

NONLINEAR behavioral modeling and wireless components

CHAPTER 6 EMI EMC MEASUREMENTS AND STANDARDS FOR TRACKED VEHICLES (MIL APPLICATION)

KA-BAND EQUIPMENT ASSEMBLY

HMC6380LC4B. WIDEBAND VCOs - SMT. Electrical Specifications, T A. Typical Applications. Features. General Description. Functional Diagram

GaAs MMIC Power Amplifier

v02.06 Insertion Loss INSERTION LOSS () C +85 C -40 C Isolation ISOLATION () Return Loss RETURN LOSS ()

CHARACTERIZATION OF SDR/CR FRONT-ENDS FOR IMPROVED DIGITAL SIGNAL PROCESSING ALGORITHMS. Diogo C. Ribeiro, Pedro Miguel Cruz, and Nuno Borges Carvalho

Varactor-Tuned Oscillators. Technical Data. VTO-8000 Series

RF1 RF2 RF3 RF4. Product Description. Ordering Information. GaAs MESFET Si BiCMOS Si CMOS

Features. = +25 C, With 0/-5V Control, 50 Ohm System. Parameter Frequency Min. Typ. Max. Units

PRINCIPLES OF COMMUNICATION SYSTEMS. Lecture 1- Introduction Elements, Modulation, Demodulation, Frequency Spectrum

Normally, when linearity behavior of an

Microwave Power Amplifiers for Broadband Applications

ENGDA Wideband Distributed Amplifier, DIE, 0.8 to 20 GHz ENGDA Features. Typical Applications. Description. Functional Block Diagram

Advance Datasheet Revision: May 2013

A Product Development Flow for 5G/LTE Envelope Tracking Power Amplifiers, Part 2

Features. Parameter Frequency Min. Typ. Max. Units. Return Loss Off State DC - 20 GHz 19 db

Improve Performance and Reliability with Flexible, Ultra Robust MEMS Oscillators

RF5633 SINGLE 5.0V, 3.3 TO 3.8GHZ LINEAR POWER AMPLIFIER

EMC of Analog Integrated Circuits

Features. = +25 C, Vcc = +5V

4 Watt Ka-Band HPA Key Features Measured Performance Primary Applications Ka-Band VSAT Product Description

The Doherty Power Amplifier 1936 to the Present Day

Satellite Technology for Future Applications

Gallium Nitride & Related Wide Bandgap Materials and Devices

Synchronizing optical to wireless signals using a resonant tunneling diode - laser diode circuit

MRF173. The RF MOSFET Line 80W, 175MHz, 28V. M/A-COM Products Released - Rev Product Image

CLASS-C POWER AMPLIFIER DESIGN FOR GSM APPLICATION

[SSC13-I-8] X Band Downlink for CubeSat : From Concept to Prototype Gwenael Guillois, Thomas Dehaene, Tristan Sarrazin (Syrlinks) Eric Peragin (CNES)

TGF Watt Discrete Power GaN on SiC HEMT. Key Features. Measured Performance. Primary Applications Space Military Broadband Wireless

= 25 C) Parameter 0.5 GHz 1.0 GHz 2.5 GHz 4.0 GHz 6.0 GHz Units. Gain db. 23 dbm W

Technical Specification

5.5 GHz to 14 GHz, GaAs MMIC Fundamental Mixer HMC558A. Data Sheet FEATURES FUNCTIONAL BLOCK DIAGRAM APPLICATIONS GENERAL DESCRIPTION

Features. Gain Variation Over Temperature db/ C

RF2044 GENERAL PURPOSE AMPLIFIER

TGF Watt Discrete Power GaN on SiC HEMT. Key Features. Measured Performance. Primary Applications Space Military Broadband Wireless

Features. = +25 C, +Vdc = +6V, -Vdc = -5V

(DF) Dielectric Filters

The G4EGQ RAE COURSE Lesson 9 Transmitters Lesson 8 looked at a simple transmitter exciter comprising of oscillator, buffer and multiplier stages.

MMA C3 6-22GHz, 0.1W Gain Block Data Sheet

Features. = +25 C, Vdc = +12V

RF MEMS for Low-Power Communications

Ceramic Packaged GaAs Power phemt DC-10 GHz

VC1. Input Match RF IN. Product Description. Ordering Information. Standard 25 piece bag Standard 2500 piece reel. GaAs HBT GaAs MESFET InGaP HBT

LOW COST PHASED ARRAY ANTENNA TRANSCEIVER FOR WPAN APPLICATIONS

Technical note - Planar Inverted-F Antennas (PIFA)

RFVC1800 Wideband MMIC VCO with Buffer Amplifier 8GHz to 12GHz

Advance Datasheet Revision: January 2015

VCC GND RF IN. Product Description. Ordering Information. GaAs HBT GaAs MESFET InGaP HBT

GaN Power Amplifiers for Next- Generation Wireless Communications

10 GHz to 20 GHz, GaAs, MMIC, Double Balanced Mixer HMC554ALC3B

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

10 W, GaN Power Amplifier, 2.7 GHz to 3.8 GHz HMC1114

Thermal Management of Solid-State RF Cooking Appliances

ULTRASTABLE OSCILLATORS FOR SPACE APPLICATIONS

= 25 C) Parameter 0.5 GHz 1.0 GHz 2.5 GHz 4.0 GHz 6.0 GHz Units. Gain db. 23 dbm W

MECGaNC30. 4 to 6 GHz GaN HEMT Power Amplifier. Main Features. Product Description. Applications

Your Single Source for Advanced Microwave and RF Technologies. teledynemicrowave.com or

Features. = +25 C, Vcc = +5V [1]

RF V TO 5.0V, 3.3GHz TO 3.8GHz LINEAR POWER AMPLIFIER

TGA Watt Ka-Band HPA. Key Features. Measured Performance Bias conditions: Vd = 6 V, Idq = 3200 ma, Vg = -0.7 V Typical

Study of MEMS Devices for Space Applications ~Study Status and Subject of RF-MEMS~

Solid state power amplifiers 101

Investigation of Electromagnetic Field Coupling from DC-DC Buck Converters to Automobile AM/FM Antennas

RF5623 SINGLE 5.0V, 3.3 TO 3.8 GHZ LINEAR POWER AMPLIFIER

= 25 C) Parameter 1.0 GHz 2.0 GHz 3.0 GHz 4.0 GHz 5.0 GHz 6.0 GHz Units. Gain db. 32 dbm W

Features. = +25 C, With 0/-5V Control, 50 Ohm System. Parameter Frequency Min. Typ. Max. Units GHz GHz

Features. = +25 C, Vdd1, 2, 3 = 5V, Idd = 250 ma*

INTRODUCTION TO COMMUNICATION SYSTEMS AND TRANSMISSION MEDIA

Features. = +25 C, IF= 100 MHz, LO= +15 dbm* Parameter Min. Typ. Max. Min. Typ. Max. Units

DC-8.0 GHz InGaP HBT MMIC Matched Gain Block Amplifier

Miniature Front End Radar Warning Receiver

Transcription:

Prof. Nuno Borges Carvalho Dept. Electrónica, Telecomunicações e Informática Instituto de Telecomunicações Universidade de Aveiro nbcarvalho@ua.pt http://www.av.it.pt/nbcarvalho GaN RF New Generations for Space Telecom

Prof. Nuno Borges Carvalho Dept. Electrónica, Telecomunicações e Informática Instituto de Telecomunicações Universidade de Aveiro nbcarvalho@ua.pt http://www.av.it.pt/nbcarvalho Intituto de Telecomunicações Aveiro-Pole

-> IT Aveiro -> Radio Systems Software Defined Radio Receiver Dynamic Range Increase Radios Systems Characterization and Design Software Defined Radio Transmitter Efficiency RF-DC Converter Efficiency Analysis of nonlinear behavior for: Power Measurements Wireless Power Transmission www.av.it.pt/rs/

RF Payloads RF Payloads impose high value of power been delivered to earth Travelling Wave Tube Amplifiers TWTA Still been used intensively in space applications nbcarvalho@ua.pt

Evolution of RF Payload Power Transmission TWTA Heavy, Expensive, big sized GaAs Low Power capabilities, good for low noise applications GaN Promissing Technology for high power and also low noise applications

Evolution of RF Payload Power Transmission Why GaN on space? Power and Frequency Theoretical limits for Si, GaAs and GaN devices Maximum Power (W) 100 000.0 10 000.0 1 000.0 100.0 10.0 GaN GaAs Si Commercial Communications Base Stations X-Band Military Radar Commercial Satcom Transmitters (VSAT-1MBPS) 1.0 0.1 1 10 100 Frequency (GHz) Commercial Broadband Satcom (VSAT-16MBPS)

Introduction and motivation» AlphaSat project and Participants

Introduction and motivation The main objective of the project is to test GaN Technology in space, mainly European versions.

GaN Technology o Transistor technology suplied by FBH ( Fredinand-Braun-Institut) o o o Cosmic radiation immunity High frequency operation High power handling

Circuit Selection o Amplifier Pros: Optimum for mimic future applications of GaN technology onboard of satellites, possibility to study TWTA future changes. Cons: High values of consumed power, need for external signal source and driver circuit, mass increase due to several circuits need for data gathering. o Oscillator Pros: No need for extra signal excitation sources, possibility of including all circuitry and its measurement systems inside the same box, reduction of power consumption and mass. Cons: Do not excite all characteristics of the technology under study. Selected Circuit

Oscillator Circuit o o o Oscillator based on traditional Colpitz configuration Frequency of oscillations imposed by payload restrictions (near 2GHz) Ceramic resonator for high Q

Oscillator Circuit o o Prototype should consider high frequency oscillations due to impressive transistor quality Oscillations near 12-15GHz. D2 D1 Stubs for high frequency spurious reduction Measurement circuit Power measurement

Oscillator Prototype Optimization of size and box weight, hardness» Concerns with material CET, electrical and thermal conductivity.» Gold wire for bonding» Epoxy glues to attach chip» Adhesives glues to PCB» Nickel and gold plating» Bonding with gold wire

Oscillator Prototype

Oscillator Prototype Thermal test cycles Between -20ºC and 70ºC a maximum frequency drift of 12 MHz.

Oscillator Prototype Vacuum tests To avoid any particles or gases released not expected

Oscillator Prototype EMC tests - US Military, agreement concern M a r k e r : 2. 2 G Hz 3 8. 1 d Bµ V/ m L e v e l [ d Bµ V/ m ] 80 70 60 50 40 30 x + x + x + 20 10 0 2G 2. 2 G 2. 4 G 2. 6 G 2. 8 G 3G 3. 2 G 3. 6 G F r e q u e n c y [ Hz ] x M ES CT T B_ EBB_ 1 1 _ r e d + M ES CT T B_ EBB_ 1 1 _ r e d 2 M ES CT T B_ EBB_ 1 1 _ p r e M ES CT T B_ EBB_ 1 1 _ p r e 2

Overall experiment

Final prototype Oscillators: Supply and control RF power, Id Supply values temperature Radiation level measurements

Challenges University of Aveiro Approach Improved Radios will have impose cleaver ways to power management. This implies that radios will have intelligence from its own. FM Radio Radio over 3G Radio over TDT DAB Satellite LTE 1º Prémio PLUG APRITEL 2010 nbcarvalho@ua.pt

Acknowledgements We would like to thank the fruitful discussions with: Prof. José Carlos Pedro, Prof. Nuno Matos and Eng. Cupido Prof. Mendiratta and Eng. Jorge Monteiro for the vacuum tests and finally to Portuguese Communications Authority (ANACOM) for the electromagnetic compatibility tests.

Post graduation in Radio System Design Start Apr - 2012 POSRAD is an advanced postgraduate course that offers an opportunity for electrical engineers to update and advance their knowledge on the area of wireless communication systems. posrad.web.ua.pt