Applications Short Haul / High Capacity Links Sensors X=23 mm Y=16 mm Product Features RF Frequency: 92 to 96 GHz Linear Gain: 7.5 db typ. Psat: 25 dbm typ. Die Size: 3.7 sq. mm. 2 mil substrate DC Power: 4 VDC @ 48 ma Product Description The APH482 monolithic HEMT amplifier is a broadband, two-stage power device, designed for use in commercial digital radios and wireless LANs. To ensure rugged and reliable operation, HEMT devices are fully passivated. Both bond pad and backside metallization are Ti/Au, which is compatible with conventional die attach, thermocompression, and thermosonic wire bonding assembly techniques. Performance Characteristics (Ta = 25 C) Specification Min Typ Max Unit Frequency 93 95 GHz Linear Gain 6 7.5 db Input Return Loss 8 db Output Return Loss 1 db Psat 25 dbm Vd1, Vd2 4 V Vg1 -.2 V Vg2 -.1 V Id1 16 ma Id2 32 ma Absolute Maximum Ratings (Ta = 25 C) Parameter Min Max Unit Vd1, Vd2 4.5 V Id1 19 ma Id2 36 ma Vg1, Vg2 -.8 +.3 V Input drive level 22 dbm Assy. Temperature 3 deg. C (6 seconds) Page 1
Input Return Loss (db) Gain (db) Pout(dBm) PAE (%) APH482 Measured Performance Characteristics (Typical Performance at 25 C) Vd1 = Vd2 = 4V, Id1 = 16 ma, Id2 = 32 ma Linear Gain vs. Frequency Pout Versus Pin 1 9 8 7 6 5 4 3 2 1 88 9 92 94 96 98 1 Pout and PAE vs. Pin at W-band (93.5, 94, 94.5 GHz) 3 28 26 24 22 2 18 16 14 12 1 93.5GHz 94.GHz 94.5GHz PAE_93.5GHz PAE_94GHz PAE_94.5GHz Pout PAE 5 1 15 2 25 Pin(dBm) 22 2 18 16 14 12 1 8 6 4 2 Input Return Loss vs. Frequency Output Return Loss vs. Frequency -2-4 -6-8 -1-12 -14-16 -18-2 88 9 92 94 96 98 1 8Output Return Loss (db) -2-4 -6-8 -1-12 -14-16 -18-2 88 9 92 94 96 98 1 Page 2
Measured Performance Characteristics (Typical Performance at 25 C) Vd1 = Vd2 = 4V, Id1 = 16 ma, Id2 = 32 ma Freq GHz S11 Mag S11 Ang S21 Mag S21 Ang S12 Mag S12 Ang S22 Mag S22 Ang 88..215 116.15 2.67-161.575.26-95.482.669 121.886 88.5.191 95.661 2.691-173.82.29-13.651.632 116.399 89..17 74.53 2.74-173.758.29-113.847.583 111.529 89.5.172 51.64 2.78 162.165.31-123.765.544 16.948 9..18 31.212 2.776 149.135.31-134.121.495 12.382 9.5.21 14.74 2.696 137.651.31-143.78.453 98.494 91..232.95 2.681 126.236.32-152.169.415 93.928 91.5.262-11.77 2.644 114.67.32-164.22.371 89.819 92..29-19.869 2.58 13.875.31-171.16.336 86.664 92.5.319-27.657 2.555 92.968.31-176.595.32 82.48 93..348-33.791 2.515 81.626.31 167.256.266 78.848 93.5.381-38.934 2.481 7.741.3 162.343.236 73.219 94..41-44.653 2.438 59.274.3 152.71.23 68.9 94.5.437-49.281 2.45 47.333.29 141.649.174 6.451 95..468-53.518 2.34 35.435.27 134.391.149 49.123 95.5.498-57.343 2.266 23.814.26 125.24.125 33.64 96..531-61.778 2.27 11.83.25 118.579.11 1.834 96.5.566-65.811 2.135 -.783.24 111.821.16-19.451 97..63-69.925 2.59-13.642.23 11.233.114-44.22 97.5.642-74.389 1.958-27.14.21 94.138.141-63.936 98..678-79.244 1.826-4.222.2 86.35.179-78.799 98.5.78-84.178 1.68-52.965.17 79.219.225-91.195 99..736-89.123 1.553-65.65.16 72.248.273-11.248 99.5.756-94.212 1.38-77.731.14 67.631.322-11.52 1..769-98.939 1.261-89.42.12 62.87.369-117.89 Page 3
Die Size and Bond Pad Locations (Not to Scale) X = 23 µm 25 µm Y = 16 25 µm DC Bond Pad = 21 x 11.5 µm RF Bond Pad = 5 x 5.5 µm Chip Thickness = 5 5 µm 1 µm 6 µm 16 µm 2 µm RF in RF out 16 µm 544 µm 544 µm 23 µm Page 4 Approved for Public Release: Northrop Grumman Case 13-xxxx, 5/xx/13
Suggested Bonding Arrangement =.1uF = 1 Ohms = 1 pf RF Input RF Output RF IN RF OUT Substrate Substrate Recommended Assembly Notes 1. Bypass caps should be 1 pf ceramic (single-layer) placed no further than 3 mils from the amplifier. 2. Best performance obtained from use of <6 mil (long) by 1.5 by.5 mil ribbons on input and output. Page 5 Approved for Public Release: Northrop Grumman Case 15-29, 1/8/15