MJW21195 (PNP) MJW21196 (NPN) Silicon Power Transistors The MJW21195 and MJW21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. Features Total Harmonic Distortion Characterized High DC Current Gain h FE = 2 Min @ I C = 8 Adc Excellent Gain Linearity High SOA: 2.25 A, 8 V, 1 Second PbFree Packages are Available* 16 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 25 VOLTS, 2 WATTS MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage V CEO 25 Vdc CollectorBase Voltage V CBO 4 Vdc EmitterBase Voltage V EBO 5. Vdc CollectorEmitter Voltage 1.5 V V CEX 4 Vdc 1 2 3 TO247 CASE 34L Collector Current Continuous Collector Current Peak (Note 1) I C 16 3 Adc Base Current Continuous I B 5. Adc MARKING DIAGRAM Total Power Dissipation @ T C = Derate Above P D 2 1.43 W W/ C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS T J, T stg 65 to +15 C Characteristic Symbol Max Unit Thermal Resistance, JunctiontoCase R JC.7 C/W Thermal Resistance, JunctiontoAmbient R JA 4 C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 5 s, Duty Cycle %. MJW2119x AYWWG 1 BASE 3 EMITTER 2 COLLECTOR x = 5 or 6 A = Assembly Location Y = Year WW = Work Week G = PbFree Package ORDERING INFORMATION *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Device Package Shipping MJW21195 TO247 3 Units/Rail MJW21195G MJW21196 TO247 3 Units/Rail MJW21196G TO247 (PbFree) TO247 (PbFree) 3 Units/Rail 3 Units/Rail Semiconductor Components Industries, LLC, 2 March, 2 Rev. 3 1 Publication Order Number: MJW21195/D
ELECTRICAL CHARACTERISTICS (T C = unless otherwise noted) Characteristic Symbol Min Typical Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (I C = madc, I B = ) V CEO(sus) 25 Vdc Collector Cutoff Current (V CE = 2 Vdc, I B = ) I CEO Adc Emitter Cutoff Current (dc, I C = ) I EBO 5 Adc Collector Cutoff Current (V CE = 25 Vdc, V BE(off) = 1.5 Vdc) I CEX 5 Adc SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased (V CE = 5 Vdc, t = 1 s (nonrepetitive) (V CE = 8 Vdc, t = 1 s (nonrepetitive) I S/b 4. 2.25 Adc ON CHARACTERISTICS DC Current Gain (I C = 8 Adc, dc) (I C = 16 Adc, I B = 5 Adc) h FE 2 8 BaseEmitter On Voltage (I C = 8 Adc, dc) V BE(on) 2. Vdc CollectorEmitter Saturation Voltage (I C = 8 Adc, I B =.8 Adc) (I C = 16 Adc, I B = 3.2 Adc) V CE(sat) 8 3 Vdc DYNAMIC CHARACTERISTICS Total Harmonic Distortion at the Output V RMS = 28.3 V, f = 1 khz, P LOAD = W RMS (Matched pair h FE = 5 @ 5 A/5 V) Current Gain Bandwidth Product (I C = 1 Adc, V CE = Vdc, ) Output Capacitance (V CB = Vdc, I E =, ) h FE unmatched h FE matched T HD %.8.8 f T 4 MHz C ob 5 pf 2
TYPICAL CHARACTERISTICS, CURRENT BANDWIDTH PRODUCT (MHz) T F 6.5 6. 5.5 5. 4.5 4. 3.5 3. 2.5 2. V CE = V Figure 1. Typical Current Gain Bandwidth Product F T, CURRENT BANDWIDTH PRODUCT (MHz) 7.5 7. 6.5 6. 5.5 5. 4.5 4. 3.5 3. 2.5 2. 1.5 V CE = V Figure 2. Typical Current Gain Bandwidth Product T J = C - T J = C - V CE = 2 V Figure 3. DC Current Gain, V CE = 2 V V CE = 2 V Figure 4. DC Current Gain, V CE = 2 V T J = C - T J = C - Figure 5. DC Current Gain, Figure 6. DC Current Gain, 3
TYPICAL CHARACTERISTICS I C, COLLECTOR CURRENT (A) 3 25 2 15 5. 2. A 1.5 A A I B =.5 A I C, COLLECTOR CURRENT (A) 3 25 2 15 5. 2. A 1.5 A A I B =.5 A 5. 15 2 25 5. 15 2 25 V CE, COLLECTOR-EMITTER VOLTAGE (VOLTS) V CE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 7. Typical Output Characteristics Figure 8. Typical Output Characteristics SATURATION VOLTAGE (VOLTS) 3. 2.5 2. 1.5.5 I C /I B = V BE(sat) V CE(sat) SATURATION VOLTAGE (VOLTS) 1.4 1.2.8.6.4.2 I C /I B = V BE(sat) V CE(sat) Figure 9. Typical Saturation Voltages Figure. Typical Saturation Voltages V BE(on), BASE-EMITTER VOLTAGE (VOLTS) V CE = 2 V V BE(on), BASE-EMITTER VOLTAGE (VOLTS) V CE = 2 V Figure 11. Typical BaseEmitter Voltage Figure 12. Typical BaseEmitter Voltage 4
There are two limitations on the power handling ability of a transistor; average junction temperature and secondary breakdown. Safe operating area curves indicate I C V CE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 13 is based on T J(pk) = 15 C; T C is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown. TYPICAL CHARACTERISTICS ms ms 1 Sec 1 1 V CE, COLLECTOREMITTER VOLTAGE (VOLTS) Figure 13. Active Region Safe Operating Area ms ms 1 Sec 1 1 V CE, COLLECTOREMITTER VOLTAGE (VOLTS) Figure 14. Active Region Safe Operating Area C ib C ib C, CAPACITANCE (pf) C ob C, CAPACITANCE (pf) C ob V R, REVERSE VOLTAGE (VOLTS) V R, REVERSE VOLTAGE (VOLTS) Figure 15. MJW21195 Typical Capacitance Figure 16. MJW21196 Typical Capacitance 5
1.2 1.1 T, TOTAL HARMONIC HD DISTORTION (%).9.8.7.6 FREQUENCY (Hz) Figure 17. Typical Total Harmonic Distortion +5 V AUDIO PRECISION MODEL ONE PLUS TOTAL HARMONIC DISTORTION ANALYZER SOURCE AMPLIFIER 5 DUT.5.5 8. DUT -5 V Figure 18. Total Harmonic Distortion Test Circuit 6
PACKAGE DIMENSIONS TO247 CASE 34L2 ISSUE E N A K F 2 PL B U L 1 2 3 P Y W J G D 3 PL C T E H 4 Q.63 (.25) M T B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS INCHES DIM MIN MAX MIN MAX A 2.32 28.8 8.3 B 15.75 16.26.62.64 C 4.7 5.3 85.29 D 1.4.4.55 E 1.9 2.6.75.2 F 1.65 2.13.65.84 G 5.45 BSC.215 BSC H 1.5 2.49.59.98 J.4.8.16.31 K 19.81 2.83.78.82 L 5.4 6.2.212.244 N 4.32 5.49 7.216 P --- 4.5 --- 77 Q 3.55 3.65 4 44 U 6.15 BSC.242 BSC W 2.87 3.12 13 23.25 (.) M Y Q S ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 8217 USA Phone: 336752175 or 8344386 Toll Free USA/Canada Fax: 336752176 or 83443867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 82829855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 79 29 Japan Customer Focus Center Phone: 8135773385 7 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MJW21195/D