MJ295G - PNP MJ296G - NPN Silicon Power Transistors The MJ295G and MJ296G utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. Features Total Harmonic Distortion Characterized High DC Current Gain Excellent Gain Linearity High SOA These Devices are PbFree and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage V CEO 25 Vdc CollectorBase Voltage V CBO 4 Vdc EmitterBase Voltage V EBO 5 Vdc CollectorEmitter Voltage.5V V CEX 4 Vdc Collector Current Continuous I C 6 Adc Collector Current Peak (Note ) I CM 3 Adc Base Current Continuous I B 5 Adc Total Device Dissipation @ T C = 25 C Derate above 25 C Operating and Storage Junction Temperature Range P D 25.43 W W/ C T J, T stg 65 to +2 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.. Pulse Test: Pulse Width = 5 s, Duty Cycle %. 6 AMPERES COMPLEMENTARY SILICON- POWER TRANSISTORS 25 VOLTS, 25 WATTS BASE PNP CASE 3 EMITTER 2 SCHEMATIC TO24AA (TO3) CASE 7 STYLE MARKING DIAGRAM 2 BASE 3 NPN CASE 3 EMITTER 2 THERMAL CHARACTERISTICS Characteristics Symbol Max Unit Thermal Resistance, JunctiontoCase R JC.7 C/W MJ29xG AYWW MEX MJ29x G A Y WW MEX = Device Code x = 5 or 6 = PbFree Package = Assembly Location = Year = Work Week = Country of Origin ORDERING INFORMATION Device Package Shipping MJ295G TO24 (PbFree) Units / Tray *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. MJ296G TO24 (PbFree) Units / Tray Semiconductor Components Industries, LLC, 23 September, 23 Rev. 6 Publication Order Number: MJ295/D
MJ295G PNP MJ296G NPN ELECTRICAL CHARACTERISTICS (T C = 25 C ± 5 C unless otherwise noted) Characteristic Symbol Min Typical Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (I C = madc, I B = ) Collector Cutoff Current (V CE = 2 Vdc, I B = ) Emitter Cutoff Current (V CE = 5 Vdc, I C = ) Collector Cutoff Current (V CE = 25 Vdc, V BE(off) =.5 Vdc) V CEO(sus) 25 Vdc I CEO Adc I EBO Adc I CEX Adc SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased (V CE = 5 Vdc, t = s (nonrepetitive) (V CE = 8 Vdc, t = s (nonrepetitive) I S/b 5 Adc ON CHARACTERISTICS DC Current Gain (I C = 8 Adc, V CE = 5 Vdc) (I C = 6 Adc, V CE = 5 Vdc) BaseEmitter On Voltage (I C = 8 Adc, V CE = 5 Vdc) h FE 25 8 75 V BE(on) 2.2 Vdc CollectorEmitter Saturation Voltage (I C = 8 Adc, I B =.8 Adc) (I C = 6 Adc, I B = 3.2 Adc) V CE(sat).4 4 Vdc DYNAMIC CHARACTERISTICS Total Harmonic Distortion at the Output V RMS = 28.3 V, f = khz, P LOAD = W RMS (Matched pair h FE = 5 @ 5 A/5 V) Current Gain Bandwidth Product (I C = Adc, V CE = Vdc, ) Output Capacitance (V CB = Vdc, I E =, ) 2. Pulse Test: Pulse Width = 3 s, Duty Cycle 2% h FE unmatched h FE matched T HD %.8.8 f T 4 MHz C ob 5 pf f, T CURRENT BANDWIDTH PRODUCT (MHz) 6.5 6. V CE = V 5.5 5. 5 V 4.5 4. 3.5 3. 2..5 T J = 25 C.5 Figure. Typical Current Gain Bandwidth Product f, T CURRENT BANDWIDTH PRODUCT (MHz) 7.5 7. 6.5 6. 5.5 5. V 4.5 4. V CE = 5 V 3.5 3. 2..5 Figure 2. Typical Current Gain Bandwidth Product 2
MJ295G PNP MJ296G NPN TYPICAL CHARACTERISTICS T J = C 25 C T J = C 25 C V CE = 2 V V CE = 2 V Figure 3. DC Current Gain, V CE = 2 V Figure 4. DC Current Gain, V CE = 2 V V CE = 5 V T J = C 25 C V CE = 5 V T J = C 25 C Figure 5. DC Current Gain, V CE = 5 V Figure 6. DC Current Gain, V CE = 5 V I C, COLLECTOR CURRENT (A) 3 25 2 5 5. 5. 5 2 25 V CE, COLLECTOR-EMITTER VOLTAGE (VOLTS) I B = 2 A.5 A Figure 7. Typical Output Characteristics A.5 A I C, COLLECTOR CURRENT (A) 3 I B = 2 A.5 A 25 A 2.5 A 5 5. 5. 5 2 25 V CE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 8. Typical Output Characteristics 3
MJ295G PNP MJ296G NPN TYPICAL CHARACTERISTICS SATURATION VOLTAGE (VOLTS) 3. 2..5.5 I C /I B = V BE(sat) V CE(sat) SATURATION VOLTAGE (VOLTS).6.4.2.8.6.4.2 I C /I B = V BE(sat) V CE(sat) Figure 9. Typical Saturation Voltages Figure. Typical Saturation Voltages V BE(on), BASE-EMITTER VOLTAGE (VOLTS) V CE = 5 V (DASHED) V CE = 2 V (SOLID) V BE(on), BASE-EMITTER VOLTAGE (VOLTS) V CE = 5 V (DASHED) V CE = 2 V (SOLID) Figure. Typical BaseEmitter Voltage Figure 2. Typical BaseEmitter Voltage I C, COLLECTOR CURRENT (AMPS) ms 5 ms sec 25 ms V CE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 3. Active Region Safe Operating Area There are two limitations on the power handling ability of a transistor; average junction temperature and secondary breakdown. Safe operating area curves indicate I C V CE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 3 is based on T J(pk) = 2 C; T C is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown. 4
MJ295G PNP MJ296G NPN C ib C ib C, CAPACITANCE (pf) C ob C, CAPACITANCE (pf) C ob V R, REVERSE VOLTAGE (VOLTS) V R, REVERSE VOLTAGE (VOLTS) Figure 4. MJ295 Typical Capacitance Figure 5. MJ296 Typical Capacitance.2. T, TOTAL HARMONIC HD DISTORTION (%).9.8.7.6 FREQUENCY (Hz) Figure 6. Typical Total Harmonic Distortion +5 V AUDIO PRECISION MODEL ONE PLUS TOTAL HARMONIC DISTORTION ANALYZER SOURCE AMPLIFIER 5 DUT.5.5 8. DUT -5 V Figure 7. Total Harmonic Distortion Test Circuit 5
MJ295G PNP MJ296G NPN PACKAGE DIMENSIONS TO24 (TO3) CASE 7 ISSUE Z V H E 2 A N U C T SEATING PLANE D 2 PL K 3 (.5) M T Q M Y M L G Y Q 3 (.5) M T B Y M NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, 982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-24AA OUTLINE SHALL APPLY. INCHES MILLIMETERS DIM MIN MAX MIN MAX A.55 REF 39.37 REF B --- 5 --- 26.67 C.25.335 6.35 8.5 D.38.43.97 9 E.55.7.4.77 G.43 BSC.92 BSC H.25 BSC 5.46 BSC K.44.48.8 2.9 L.665 BSC 6.89 BSC N ---.83 --- 28 Q 5 65 3.84 4.9 U.87 BSC 35 BSC V 3 88 3.33 4.77 STYLE : PIN. BASE 2. EMITTER CASE: COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patentmarking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 563, Denver, Colorado 827 USA Phone: 33675275 or 8344386 Toll Free USA/Canada Fax: 33675276 or 83443867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 82829855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 42 33 79 29 Japan Customer Focus Center Phone: 835875 6 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MJ295/D