May 999 FS9435A Single P-Channel Enhancement Mode Field Effect Transistor Generalescription SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, MOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. Features -5.3 A, -3 V, R S(ON) =.45 Ω @ V GS = - V, R S(ON) =.75 Ω @ V GS = - 4.5 V. High density cell design for extremely low R S(ON). High power and current handling capability in a widely used surface mount package. SOT-23 SuperSOT TM -6 SuperSOT TM -8 SO-8 SOT-223 SOIC-6 FS 9435A 5 6 4 3 SO-8 pin S S S G 7 8 2 Absolute Maximum Ratings T A = 25 o C unless otherwise noted Symbol Parameter FS9435A Units V SS rain-source Voltage -3 V V GSS Gate-Source Voltage -2 V I rain Current - Continuous (Note a) - 5.3 A - Pulsed -5 P Maximum Power issipation (Note a) 2.5 W (Note b).2 (Note c) T J,T STG Operating and Storage Temperature Range -55 to 5 C THERMAL CHARACTERISTICS R θja Thermal Resistance, Junction-to-Ambient (Note a) 5 C/W R θjc Thermal Resistance, Junction-to-Case (Note ) 25 C/W 999 Fairchild Semiconductor Corporation FS9435A Rev.C
Electrical Characteristics (T A = 25 O C unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BV SS rain-source Breakdown Voltage V GS = V, I = -25 µa -3 V BV SS / T J Breakdown Voltage Temp. Coefficient I = -25 µa, Referenced to 25 o C -25 mv/ o C I SS Zero Gate Voltage rain Current V S = -24 V, V GS = V - µa I GSSF Gate - Body Leakage, Forward V GS = 2 V, V S = V - na I GSSR Gate - Body Leakage, Reverse V GS = -2 V, V S = V - na ON CHARACTERISTICS (Note 2) V GS(th) Gate Threshold Voltage V S = V GS, I = -25 µa - -.5-3 V V GS(th) / T J Gate Threshold Voltage Temp. Coefficient I = -25 µa, Referenced to 25 o C -3.2 mv/ o C R S(ON) Static rain-source On-Resistance V GS = - V, I = -5.3 A.35.45 Ω T J =25 C.52.72 V GS = -4.5 V, I = -4. A.59.75 I (ON) On-State rain Current V GS = - V, V S = -5 V -25 A g FS Forward Transconductance V S = - V, I = -4 A 9.5 S YNAMIC CHARACTERISTICS C iss Input Capacitance V S = -5 V, V GS = V, 73 pf C oss Output Capacitance f =. MHz 4 pf C rss Reverse Transfer Capacitance 9 pf SWITCHING CHARACTERISTICS (Note 2) t (on) Turn - On elay Time V S = - V, I = - A 2 ns t r Turn - On Rise Time V GS = - V, R GEN = 6 Ω 8 t (off) Turn - Off elay Time 9 25 t f Turn - Off Fall Time 55 8 Q g Total Gate Charge V S = - V, I = -4 A, 9 27 nc Q gs Gate-Source Charge V GS = - V 3.5 Q gd Gate-rain Charge 3.6 RAIN-SOURCE IOE CHARACTERISTICS AN MAXIMUM RATINGS I S Maximum Continuous rain-source iode Forward Current -2. A V S rain-source iode Forward Voltage V GS = V, I S = -2. A (Note 2) -.77 -.2 V Notes:. R θja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θjc is guaranteed by design while R θca is determined by the user's board design. a. 5 O C/W on a in 2 pad of 2oz copper. b. 5 O C/W on a.4 in 2 pad of 2oz copper. c. 25 O C/W on a.6 in 2 pad of 2oz copper. Scale : on letter size paper 2. Pulse Test: Pulse Width < 3µs, uty Cycle < 2.%. FS9435A Rev.C
S Typical Electrical Characteristics - I, RAIN-SOURCE CURRENT (A) 5 4 3 2 V GS= -V -7.V -6.V -5.V -4.5V -4.V -3.5V R S(on), NORMALIZE RAIN-SOURCE ON-RESISTANCE 3 2.5 2.5 V GS = -3.5 V -4.V -4.5V -5.V -6.V -8.V -V 2 4 6 8 -V S, RAIN-SOURCE VOLTAGE (V).5 2 3 4 5 - I, RAIN CURRENT (A) Figure. On-Region Characteristics. Figure 2. On-Resistance Variation with rain Current and Gate Voltage. R S(ON), NORMALIZE RAIN-SOURCE ON-RESISTANCE.6.4.2.8 I = -5.3A V GS = -V R S(ON), ON-RESISTANCE (OHM).2.75.5.25..75.5.25 T = 25 C J T = 25 C J I = -2.7A.6-5 -25 25 5 75 25 5 T J, JUNCTION TEMPERATURE ( C) 2 4 6 8 -V, GATE TO SOURCE VOLTAGE (V) GS Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. - I, RAIN CURRENT (A) 5 4 3 2 V = -5V S T = -55 C J 25 C 25 C 2 4 6 8 -V, GATE TO SOURCE VOLTAGE (V) GS -I, REVERSE RAIN CURRENT (A) 6... V GS= V T = 25 C J 25 C -55 C..2.4.6.8.2.4 -V S, BOY IOE FORWAR VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body iode Forward Voltage Variation with Source Current and Temperature. FS9435A Rev.C
Typical Electrical Characteristics (continued) -V GS, GATE-SOURCE VOLTAGE (V) 8 6 4 2 I = -5.3A 5 5 2 Q g, GATE CHARGE (nc) V = -5V S -V -5V CAPACITANCE (pf) 2 5 2 f = MHz V GS = V 5..3 3 3 -V S, RAIN TO SOURCE VOLTAGE (V) C iss C oss C rss Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. -I, RAIN CURRENT (A) RS(ON) LIMIT s s V GS = -V. SINGLE PULSE R θja = 25 C/W T AA= 25 C...2.5 2 5 2 5 C ms ms ms -V S, RAIN-SOURCE VOLTAGE (V) us POWER (W) 5 4 3 2.... 3 SINGLE PULSE TIME (SEC) SINGLE PULSE R θja= 25 C/W T A = 25 C Figure 9. Maximum Safe Operating Area. Figure. Single Pulse Maximum Power issipation. r(t), NORMALIZE EFFECTIVE TRANSIENT THERMAL RESISTANCE.5.3.2..5.3.2 =.5.2..5.2. Single Pulse..... 3 t, TIME (sec) P(pk) R θja (t) = r(t) * R θja R θja = 25 C/W t t 2 T J - T A = P * R θja (t) uty Cycle, = t / t 2 Figure. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note c. Transient thermal response will change depending on the circuit board design. FS9435A Rev.C
ELECTRO MAGN ETI C, MAG NETIC O R R AIO ACTIVE FI EL S TNR ATE PT NUMBER PEEL STRENGTH MIN gms MAX gms SO-8 Tape and Reel ata and Package imensions SOIC(8lds) Packaging Configuration: Figure. ELECTROSTATIC SENSITIVE EVICES O NO T SHI P OR STO RE N EAR STRO NG ELECTROSTATIC ES Label Antistatic Cover Tape Static issipative Embossed Carrier Tape Packaging escription: SOIC-8 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. These reeled parts in standard option are shipped with 2,5 units per 3" or 33cm diameter reel. The reels are dark blue in color and is made of polystyrene plastic (antistatic coated). Other option comes in 5 units per 7" or 77cm diameter reel. This and some other options are further described in the Packaging Information table. These full reels are individually barcode labeled and placed inside a standard intermediate box (illustrated in figure.) made of recyclable corrugated brown paper. One box contains two reels maximum. And these boxes are placed inside a barcode labeled shipping box which comes in different sizes depending on the number of parts shipped. F63TNR Label Customized Label Note/Comments SOIC (8lds) Packaging Information Packaging Option Standard (no flow code) L86Z F 84Z Packaging type TNR Rail/Tube TNR TNR Qty per Reel/Tube/Bag 2,5 95 4, 5 Reel Size 3" ia - 3" ia 7" ia Box imension (mm) 343x64x343 53x3x83 343x64x343 84x87x47 Max qty per Box 5, 3, 8,, Weight per unit (gm).774.774.774.774 Weight per Reel (kg).66 -.9696.82 NS NS NS SOIC-8 Unit Orientation NS NS Pin 343mm x 342mm x 64mm Standard Intermediate box F63TNR Label sample LOT: CBVK74B9 QTY: 25 F63TNLabel ES Label F63TN Label FSI: FS9953A SPEC: ES Label /C: 9842 QTY: SPEC REV: /C2: QTY2: CPN: N/F: F (F63TNR)3 SOIC(8lds) Tape Leader and Trailer Configuration: Figure 2. Carrier Tape Cover Tape Trailer Tape 64mm minimum or 8 empty pockets Components Leader Tape 68mm minimum or 2 empty pockets July 999, Rev. B
SO-8 Tape and Reel ata and Package imensions, continued SOIC(8lds) Embossed Carrier Tape Configuration: Figure 3. T P E F K Wc B E2 W Tc A P User irection of Feed imensions are in millimeter Pkg type A B W E E2 F P P K T Wc Tc SOIC(8lds) (2mm) 6.5 +/-. 5.3 +/-. 2. +/-.3.55 +/-.5.6 +/-..75 +/-..25 min 5.5 +/-.5 8. +/-. 4. +/-. 2. +/-..45 +/-.5 9.2 +/-.3.6 +/-.2 Notes: A, B, and K dimensions are determined with respect to the EIA/Jedec RS-48 rotational and lateral movement requirements (see sketches A, B, and C). 2 deg maximum.5mm maximum B Typical component cavity center line.5mm maximum 2 deg maximum component rotation Sketch A (Side or Front Sectional View) Component Rotation SOIC(8lds) Reel Configuration: Figure 4. A Sketch B (Top View) Component Rotation Typical component center line Sketch C (Top View) Component lateral movement W Measured at Hub im A Max im A max im N 7" iameter Option See detail AA B Min im C See detail AA W3 im min 3" iameter Option W2 max Measured at Hub ETAIL AA Tape Size Reel Option imensions are in inches and millimeters im A im B im C im im N im W im W2 im W3 (LSL-USL) 2mm 7" ia 7. 77.8.59.5 52 +.2/-.8 3 +.5/-.2.795 2.2 2.65 55.488 +.78/-. 2.4 +2/.724 8.4.469.66.9 5.4 2mm 3" ia 3. 33.59.5 52 +.2/-.8 3 +.5/-.2.795 2.2 7. 78.488 +.78/-. 2.4 +2/.724 8.4.469.66.9 5.4 998 Fairchild Semiconductor Corporation July 999, Rev. B
SO-8 Tape and Reel ata and Package imensions, continued SOIC-8 (FS PKG Code S) : Scale : on letter size paper imensions shown below are in: inches [millimeters] Part Weight per unit (gram):.774 9 September 998, Rev. A
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