NTH027N65S3F N-Channel SuperFET III FRFET MOSFET 650 V, 75 A, 27.4 mω Features 700 V @ T J = 50 o C Typ. R DS(on) = 23 mω Ultra Low Gate Charge (Typ. Q g = 259 nc) Low Effective Output Capacitance (Typ. C oss(eff.) = 972 pf) 00% Avalanche Tested RoHS Compliant Applications Telecom / Sever Power Supplies Industrial Power Supplies UPS / Solar Description SuperFET III MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency. SuperFET III FRFET MOSFET s optimized reverse recovery performance of body diode can remove additional component and improve system reliability. G D G D S TO-247 long leads S Absolute Maximum Ratings T C = 25 o C unless otherwise noted. Symbol Parameter NTH027N65S3F-F55 (Note ) Unit V DSS Drain to Source Voltage 650 V V GSS Gate to Source Voltage - DC ±30 V - AC (f > Hz) ±30 V I D Drain Current - Continuous (T C = 25 o C) 75 - Continuous (T C = 00 o C) 60 A I DM Drain Current - Pulsed (Note 2) 87.5 A E AS Single Pulsed Avalanche Energy (Note 3) 60 mj I AS Avalanche Current (Note 2) 5 A E AR Repetitive Avalanche Energy (Note 2) 5.95 mj dv/dt MOSFET dv/dt 00 Peak Diode Recovery dv/dt (Note 4) 50 V/ns P D Power Dissipation (T C = 25 o C) 595 W - Derate Above 25 o C 4.76 W/ o C T J, T STG Operating and Storage Temperature Range -55 to +50 o C T L Maximum Lead Temperature for Soldering, /8 from Case for 5 Seconds 300 o C Thermal Characteristics Symbol Parameter NTH027N65S3F-F55 Unit R θjc Thermal Resistance, Junction to Case, Max. 0.2 o C/W R θja Thermal Resistance, Junction to Ambient, Max. 40 207 Semiconductor Components Industries, LLC. November-207, Rev. 2 Publication Order Number: NTH027N65S3F/D
Package Marking and Ordering Information Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity NTH027N65S3F-F55 NTH027N65S3F TO-247 Tube N/A N/A 30 units Electrical Characteristics T C = 25 o C unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics V GS = 0 V, I D = ma, T J = 25 C 650 - - V BV DSS Drain to Source Breakdown Voltage V GS = 0 V, I D = ma, T J = 50 C 700 - - V ΔBV DSS Breakdown Voltage Temperature I / ΔT J Coefficient D = 5 ma, Referenced to 25 o C - 0.6 - V/ o C V DS = 650 V, V GS = 0 V - - 0 I DSS Zero Gate Voltage Drain Current μa V DS = 520 V, T C = 25 o C - 36 - I GSS Gate to Body Leakage Current V GS = ±30 V, V DS = 0 V - - ±00 na On Characteristics V GS(th) Gate Threshold Voltage V GS = V DS, I D = 7.5 ma 3.0-5.0 V R DS(on) Static Drain to Source On Resistance V GS = 0 V, I D = 35 A - 23 27.4 mω g FS Forward Transconductance V DS = 20 V, I D = 37.5 A - 56 - S Dynamic Characteristics C iss Input Capacitance V DS = 400 V, V GS = 0 V, - 7690 - pf C oss Output Capacitance f = MHz - 200 - pf C oss(eff.) Effective Output Capacitance V DS = 0 V to 400 V, V GS = 0 V - 972 - pf C oss(er.) Energy Related Output Capacitance V DS = 0 V to 400 V, V GS = 0 V - 352 - pf Q g(tot) Total Gate Charge at 0V V DS = 400 V, I D = 37.5 A, - 259 - nc Q gs Gate to Source Gate Charge V GS = 0 V - 72 - nc Q gd Gate to Drain Miller Charge (Note 5) - 99 - nc ESR Equivalent Series Resistance f = MHz -.2 - Ω Switching Characteristics t d(on) Turn-On Delay Time - 49 - ns t r Turn-On Rise Time V DD = 400 V, I D = 37.5 A, - 47 - ns t d(off) Turn-Off Delay Time V GS = 0 V, R g = 2 Ω - 3 - ns t f Turn-Off Fall Time (Note 5) - 34 - ns Source-Drain Diode Characteristics I S Maximum Continuous Source to Drain Diode Forward Current - - 75 A I SM Maximum Pulsed Source to Drain Diode Forward Current - - 87.5 A V SD Source to Drain Diode Forward Voltage V GS = 0 V, I SD = 37.5 A - -.3 V t rr Reverse Recovery Time V GS = 0 V, I SD = 37.5 A, - 68 - ns Q rr Reverse Recovery Charge di F /dt = 00 A/μs - 04 - nc Notes:. Due to system integration constraints between Fairchild and ON semiconductor, as of November, 207 any product part number with a underscore will be replaced with a dash. This is a notification. 2. Repetitive rating: pulse-width limited by maximum junction temperature. 3. I AS = 5 A, R G = 25 Ω, starting T J = 25 C. 4. I SD 37.5 A, di/dt 00 A/μs, V DD 400 V, starting T J = 25 C. 5. Essentially independent of operating temperature typical characteristics. 2
Typical Performance Characteristics RDS(ON), ID, Drain Current[A] Drain-Source On-Resistance [Ω] Figure. On-Region Characteristics 200 00 0 V GS = 0.0V 8.0V 7.0V 6.5V 6.0V 5.5V. 250μs Pulse Test 2. T C = 25 o C 0. 0 20 V DS, Drain-Source Voltage[V] Figure 2. Transfer Characteristics 2 3 4 5 6 7 8 V GS, Gate-Source Voltage[V] Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage Drain Current and Gate Voltage Variation vs. Source Current and Temperature 0.04 0.03 0.02 *Note: T C = 25 o C V GS = 0V V GS = 20V IS, Reverse Drain Current [A] ID, Drain Current[A] 300 00 0 000 00 0 0. 0.0. V DS = 20V 2. 250μs Pulse Test 50 o C. V GS = 0V 2. 250μs Pulse Test 50 o C -55 o C -55 o C 25 o C 25 o C 0.0 0 50 00 50 200 I D, Drain Current [A] Figure 5. Capacitance Characteristics 0.00 0.0 0.5.0.5 2.0 V SD, Body Diode Forward Voltage [V] Figure 6. Gate Charge Characteristics 000000 0 *Note: I D = 37.5A Capacitances [pf] 00000 0000 000 00 0 *Note:. V GS = 0V 2. f = MHz Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd C iss C oss C rss 0. 0-0 0 0 0 2 V DS, Drain-Source Voltage [V] 0 3 VGS, Gate-Source Voltage [V] 8 6 4 2 V DS = 30V V DS = 400V 0 0 60 20 80 240 300 Q g, Total Gate Charge [nc] 3
Typical Performance Characteristics (Continued) BVDSS, [Normalized] Drain-Source Breakdown Voltage ID, Drain Current [A] Figure 7. Breakdown Voltage Variation vs. Temperature.2..0 0.9 0.8. V GS = 0V 2. I D = 5mA -50 0 50 00 50 T J, Junction Temperature [ o C] Figure 9. Maximum Safe Operating Area 500 00 0 Operation in This Area is Limited by R DS(on). T C = 25 o C DC ms 0ms 00μs 30μs 2. T J = 50 o C 3. Single Pulse 0. 0 00 000 V DS, Drain-Source Voltage [V] Figure 8. On-Resistance Variation vs. Temperature RDS(on), [Normalized] Drain-Source On-Resistance ID, Drain Current [A] 3.0 2.5 2.0.5.0 0.5 0.0. V GS = 0V 2. I D = 35A -50 0 50 00 50 T J, Junction Temperature [ o C] Figure 0. Maximum Drain Current vs. Case Temperature 80 60 40 20 0 25 50 75 00 25 50 T C, Case Temperature [ o C] Figure. Eoss vs. Drain to Source Voltage 60 45 E OSS [μj] 30 5 0 0 30 260 390 520 650 V DS, Drain to Source Voltage [V] 4
Typical Performance Characteristics (Continued) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 2 0. 0.0 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0. 0.05 0.02 0.0 SINGLE PULSE Figure 2. Transient Thermal Response Curve Duty Cycle, D = t / t 2 0.00 0-5 0-4 0-3 0-2 0-0 0 0 0 2 t, RECTANGULAR PULSE DURATION (sec) NOTES: P DM t t 2 Z θjc (t) = r(t) x R θjc R θjc = 0.2 o C/W Peak T J = P DM x Z θjc (t) + T C 5
I G = const. R G Figure 3. Gate Charge Test Circuit & Waveform R L V V DS DS 90% V V GS DD V 0V GS DUT 0% V GS t d(on) t r t d(off) tf t on t off Figure 4. Resistive Switching Test Circuit & Waveforms V GS Figure 5. Unclamped Inductive Switching Test Circuit & Waveforms 6
V GS V GS ( Driver ) R G DUT + I SD V DS _ L Driver Same Type as DUT dv/dt controlled by RG I SD controlled by pulse period Gate Pulse Width D = -------------------------- Gate Pulse Period V DD 0V I FM, Body Diode Forward Current I SD ( DUT ) di/dt I RM Body Diode Reverse Current V DS ( DUT ) Body Diode Recovery dv/dt V SD V DD Body Diode Forward Voltage Drop Figure 6. Peak Diode Recovery dv/dt Test Circuit & Waveforms 7
Mechanical Dimensions 8
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at /site/pdf/patent Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 952 E. 32nd Pkwy, Aurora, Colorado 800 USA Phone: 303 675 275 or 800 344 3860 Toll Free USA/Canada Fax: 303 675 276 or 800 344 3867 Toll Free USA/Canada Email: orderlit@onsemi.com Semiconductor Components Industries, LLC N. American Technical Support: 800 282 9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 42 33 790 290 Japan Customer Focus Center Phone: 8 3 587 050 ON Semiconductor Website: Order Literature: http:///orderlit For additional information, please contact your local Sales Representative