FDD Solution Overview Including Airfast Gen 2 Product Introduction FTF-NET-F0478 Suhail Agwani Product Line Manager, RF Cellular Products MAY.2014 TM External Use
Agenda Freescale RF Introduction Airfast Gen2 Airfast Performance PA Designs with Airfast External Use 1
Radio Frequency Freescale pioneered RF technology and continues to be the leader with high-quality, high-performance products using the latest technologies Applications Market Leadership Wireless Network Infrastructure Macro, Metro & small cellular basestations Digital front end #1 High Power RF Transistors for Wireless Infrastructure (1) Broadcast, Industrial/Scientific/Medical UHF & VHF broadcast TV FM & shortwave radio CO 2 lasers, plasma generation, MRI Customers Enterprise Access Points, Professional Mobile Radio Converged cellular / wifi Public safety, dispatch, transportation, marine Aerospace / Defense Radar Air traffic management Jammers External Use 2 Source: (1) ABI Research, December 2012
RF Products for Wireless Network Infrastructure Enterprise Microcells Femto Basestations RRU / RFU Micro/Metrocells Microcells Enterprise Femto RRU & RFU RRU/RFU External Use 3
Product Offerings Enable customers to create world-class, high-performing designs Technology leadership LDMOS, GaN, GaAs technologies covering all cell bands. Portfolio Leadership: Airfast family of Drivers and Final RF Power transistors LNAs and GPAs Radio control products Doherty alignment modules (ADAM) and DSAs External Use 4
RFD Organization Worldwide Freescale Seoul Marketing, Application Freescale Tokyo Marketing, Application Freescale Chengdu Design, Applications Freescale Austin Corporate Headquarters Oak Hill Fab 8 Freescale Kuala Lumpur Final Manufacturing Freescale Shanghai Marketing, Applications RFD Global Headquarters Tempe, Arizona Design, Marketing, Applications, Modeling, Systems Freescale Toulouse Design, Marketing, Modeling, Applications, Systems Freescale Tianjin Final Manufacturing External Use 5
Why Customers Choose Freescale RF Market Leadership with Technology and Service Differentiation Freescale RF is the undisputed #1 leader in cellular infrastructure RF Power LDMOS Device Share Infineon 16.6% Best-in-class performance Global applications support Largest and most reliable supply chain Differentiated product offerings Long term customer relationships NXP 29.0% Freescale 54.4% SOURCE: ABI Research March 2014 External Use 6
Airfast Gen 2 Introduction External Use 7
Airfast Milestones 2011 Airfast brand introduced Freescale s next generation of RF power solutions for cellular infrastructure applications. 2012 First Airfast part, AFT18S230S, launched July 2012 Followed by 5 more product launches in 2012 2013 21 Airfast products launched in 2013. Product leadership established in LTE. Significant and consistent design wins globally 2014 Airfast 2 Launch External Use 8
Airfast Gen 2 Airfast is a result of a holistic design approach and not any Passive Development one individual piece of technology Packaging Technology Systems Device Development Applications External Use 9
What Airfast Brings Improved Performance: Building on Freescale s industry leading performance Expanded Airfast family Adding ICs, VHV and GaN to the comprehensive line of discrete transistors Enhanced Customer Solution Improving Time To Market for our customer through custom solutions Rollout Full Market Launch : IMS 2014 External Use 10
Low Band Products 1GHz and Below VHV 50 V LDMOS products Full band (700-960MHz) Frequency Selectable Broad Band (FSBB) circuit solutions FSBB: use same part with only tuning changes required when designing a PA for another band enables faster PA design cycles High power density of VHV enables smaller footprint and lower BOM 28 V LDMOS products continuous improvements Products Support 20W, 40/80W & 60W average power PA(53/55.5/57dBm Peak Doherty) HIP (Asymmetric) in package Doherty Finals Increasing the number of products offered in Plastic packages External Use 11
790 960 MHz 60W Avg FSBB Doherty With AFV09P350N Frequency Specific Broad-Band Doherty Simplifies manufacturing through re-use Same RF Power Transistor Same PCB & mechanics Minor component level changes Output side only Equivalent to narrow band Doherty performance, but covers 3 bands with 1 device / PCB. AFV 790-820MHz 869-894MHz 925-960MHz External Use 12
High Band Products 1800-2700MHz LDMOS Further improve upon the high gain and efficiency products available in the first generation of Airfast LDMOS devices. GaN First 50 V GaN products. Line-ups supported with 50V driver and 5V MMIC pre-drivers Products Support 20W, 40/80W & 60W average power PA(53/55.5/57dBm Peak Doherty) HIP (Asymmetric) in package Doherty Finals Air cavity and Plastic Package options External Use 13
Driver and Small Cell Products ICs Airfast Integrated Circuit (AFIC) products for driver and small cell applications. First AFICs: A2I25D012N, A2I25D025N, and A2I22D050N sampling Now Expanded offerings for microcells Discrete Drivers 6W and 10W rated power Broadband frequency range (700 MHz to 2700 MHz) High gain (20 db to 24 db) across band Ultra-small footprint package (PLD-1.5W) Products 2 stage HIP/Symmetric in package Finals solutions for 250mW to 5W PAs High gain/efficiency Drivers for 20W, 40/80W & 60W average power macro BTS Plastic packages External Use 14
Customer Solutions Shorter time to market for our customer partners Full Line up reference designs Circuit design services Example lineup solution : Pre-Driver, Driver and Final External Use 15
RF Packages Air Cavity NI 400 NI780 NI880 NI1230 FSL s Packaging Technologies is a key Enabler of Performance and Cost Differentiation Continuing packaging innovations bring: Higher Integration Higher Bandwidth Higher Power Lower Cost Overmolded Plastic OM1230, 880, 780 TO270 Class PLD, PFP, PQFN, SOT Packages for 2W to 400W products Cellular bands from 700MHz to 3500MHz supported Performance/Cost Optimized by Application External Use 16
Airfast Gen 2 Performance External Use 17
Airfast Gen 2 : Enabling Next Gen Cellular High gain Eliminates stages, reducing systems cost High efficiency Allows use of smaller heatsinks and housings Less heat leads to lower operational costs Multiband Solutions Solutions at multiple frequency bands Packaging Improved Doherty performance from better isolation between carrier and peaking Better thermal managements enablement for smaller packages Expansion of OM and Air Cavity package families External Use 18
Flagship Airfast Discretes Designed for 28 V Operations for Cellular Base station applications A2T07D160W04S A2T07H310-24S A2T26H160-24S 160W Dual path Device 720-960MHz In Doherty, Gain 20dB 53 dbm peak power 50 % efficiency at 8 db OBO NI-780-4L 310W Asymmetrical Doherty in Package Device 720 960 MHz In Doherty, Gain 19 db 55 dbm Peak Power 51% efficiency at 8 db OBO NI-1230-4L2L 160W Asymmetrical Doherty in Package Device 2496 2690 MHz In Doherty, Gain 15.5 db 52.5 dbm peak power 47% efficiency at 8 db OBO NI-780-4L2L External Use 19
Flagship Airfast ICs Designed for 28 V Operations for Cellular Base station applications A2I22D050N/GN A2I25D012N/GN 50W RFIC 1800-2200 MHz In Doherty, Gain 30dB 49 dbm Peak Power 40% efficiency at 8 db output back off TO-270WB-15 12W RFIC 2300 2690 MHz In Doherty, Gain 30dB 43 dbm Peak Power 42% efficiency at 8 db output back off TO-270WB-15 External Use 20
700-960MHz 40W Solution: A2T07H310-24S Freq (MHz) Pin (dbm) Pout (dbm) Gain (db) IRL (db) Adj-L (dbc) Adj-U (dbc) PAR (db) Eff (%) 860 28.4 47.2 18.8-21.1-29.9-30.3 7.46 52.1 868 28.4 47.2 18.8-22.0-30.1-30.6 7.48 52.2 875 28.5 47.2 18.7-23.2-30.5-31.0 7.48 52.1 ACP 20MHz After DPD 40MHz After DPD 1 RM * -40 CLRWR -50 Ref -8 dbm * Att 0 db -10-20 -30 2 RM * -60 SWP 10 of 10 VIEW -70-80 -90-100 * RBW 100 khz * VBW 300 khz * SWT 2 s Center 868 MHz 6 MHz/ Span 60 MHz Standard: NONE Adjacent Channel Tx Channels Ch1 (Ref) -11.66 dbm Ch2-12.27 dbm Total -8.95 dbm Lower -58.14 db Upper -56.54 db Alternate Channel Lower -60.99 db Upper -59.29 db 2nd Alternate Channel Lower -59.10 db External Upper Use 21-55.78 db -58 dbc -54 dbc A 3DB -10-20 -30 1 RM * -40 CLRWR -50 Ref -8 dbm * Att 0 db 2 RM * -60 SWP 10 of 10 VIEW -70-80 -90-100 * RBW 100 khz * VBW 300 khz * SWT 2 s Center 868 MHz 15 MHz/ Span 150 MHz Standard: NONE Adjacent Channel Tx Channels Ch1 (Ref) -11.44 dbm Ch2-12.57 dbm Total -8.96 dbm Lower -54.00 db Upper -55.04 db Alternate Channel Lower -61.39 db Upper -60.95 db 2nd Alternate Channel Lower -55.23 db Upper -54.77 db * A 3DB
1.8GHz 40-50W Solution: A2T18H410 Freq (MHz) Pin (dbm) Pout (dbm) Gain (db) IRL (db) Adj-L (dbc) Adj-U (dbc) PAR (db) Eff (%) 1880 31.4 49.3 17.9-18.5-37.6-38.8 7.7 50.2 1842.5 31.2 49.3 18.1-17.3-35.8-35.9 7.7 51.1 1805 31.4 49.3 17.9-16.3-34.0-33.8 7.7 52.3 ACP IM Raw After DPD Raw After DPD -32 dbc -55 dbc -26 dbc -56 dbc 1 RM * AVG Ref -13.3 dbm * Att 10 db -20-30 -40-50 -60 SWP 5 of 5-70 -80-90 -100-110 * RBW 30 khz * VBW 300 khz * SWT 185 ms Center 1.845 GHz 16.4 MHz/ Span 164 MHz Standard: W-CDMA 3GPP FWD Tx Channels Ch1 (Ref) -8.16 dbm Ch2-7.72 dbm Total -4.92 dbm Lower Upper db db Adjacent -31.57-32.73 Alternate -47.02-47.09 2nd Alt -58.59-58.79 3rd Alt -59.28-59.53 4th Alt -48.32-48.51 5th Alt -34.01-35.08 6th Alt -25.70-26.88 7th Alt -33.76-34.54 8th Alt -48.17-48.69 9th Alt -59.70-60.43 10th Alt -61.04-61.67 11th Alt -50.72-51.55 External Use 22 A NOR 3DB 1 RM * AVG Ref -13.3 dbm * Att 10 db -20-30 -40-50 -60 SWP 5 of 5-70 -80-90 -100-110 * RBW 30 khz * VBW 300 khz * SWT 185 ms Center 1.845 GHz 16.4 MHz/ Span 164 MHz Standard: W-CDMA 3GPP FWD Tx Channels Ch1 (Ref) -7.58 dbm Ch2-8.43 dbm Total -4.97 dbm Lower Upper db db Adjacent -55.66-55.36 Alternate -61.98-62.19 2nd Alt -63.98-63.69 3rd Alt -62.52-63.28 4th Alt -60.35-61.82 5th Alt -58.97-60.00 6th Alt -56.33-58.89 7th Alt -59.47-60.81 8th Alt -63.06-63.73 9th Alt -64.05-63.78 10th Alt -61.36-61.04 11th Alt -59.30-57.24 A NOR 3DB
Line-up Diagram & Performance Summary AFT27S010N A2T26H160-24S Circulator Connector Connector PLD-1.5W 8x15W VDD=26V NI-780S-4L2L 8x20W VDD=28V Freq 2535-2675MHz 2535-2675MHz P-1dB P-3dB Gain Flatness Line up Eff >50.5dBm 52dBm 34.1dB <0.3dB 40.4%@43.3dBm[*] (8.6dB OBO) [*] 1-carrier WCDMA signal with 10.3dB PAR. >51dBm 52.4dBm 34.3dB <0.3dB 40.1%@44.3dBm[*] (8.1dB OBO) External Use 23
Airfast IC Performance 12W and 25W AFI25D012N AFI25D025N S2,1 : 2.2GHz 2.8GHz Vdd (V) 28V 28V Frequency Capability 2300-2700MHz 2300-2700MHz P1dB 13W 25W Gain 31dB 31dB P1dB 13W 25W Efficiency (%) Class AB 10dB OBO 18% 18% Package TO-270WB-15 TO-270WB-17 A2I25D012N : Doherty Performance Freq (MHz) Gain (db) IRL (db) Adj-L (dbc) Adj-U (dbc) PAR (db) Eff (%) 2575 28.95-21.98-31.12-31.16 7.69 38.23 2605 28.83-21.57-30.64-30.63 7.63 39.14 2635 28.55-21.10-30.41-30.49 7.60 39.18 External Use 24
Design with Airfast : Examples of TD-LTE and FDD-LTE PA Designs External Use 25
End to End PA Solutions from Freescale Flexible and reusable RF designs enable shorter Design Cycles and Time to Market 7-step approach to lineup selection External Use 26
Step 1 : PA Specifications & Requirements Known Parameters Power output at the Antenna connector required Small signal input from TRX Backend losses between PA output and antenna connector Signal PAR Frequency of operation Efficiency Targets Power Supply (Vdd) Input Pavg dbm Pre-Driver ADAM Driver Doherty Final Output Pavg dbm Signal PAR TRX Backend losses = -1.5dB External Use 27
Step 2: Freescale Product Selector For more information on Design Collateral contact Freescale Sales Application sorted user friendly Roadmaps Quick reference Product Selector guide Data packs with performance details Reference circuits External Use 28
Step 3 : Make Initial Component Selection Type Final Stage Line Up Composition A2T26H160 160W Rated Power Single Stage Asymmetric Doherty NI-780-6 In Development Line Up Composition AFT18H357 160W Rated Power Single Stage Asymmetric Doherty NI-780-6 In Development Driver Stage AFT27S006N 6W Rated Power Single Stage PLD 1.5 Released AFT27S010N 10W Rated Power Single Stage PLD 1.5 Released ADAM MMIC MMDS25254H 25 dbm Rated Power Analog Doherty Control QFN 6x6 In Development MMDS25254H 25 dbm Rated Power Analog Doherty Control QFN 6x6 In Development Pre Driver Stage MMA25312B 31 dbm Rated Power Two Stage Single Path QFN 3x3 Released MMA25312B 31 dbm Rated Power Two Stage Single Path QFN 3x3 Released External Use 29
Step 4 : Verify the Final Selection Output Pavg = 46dBm PA Output Pavg = 47.5dBm Pre-Driver ADAM Driver Doherty Final Backend losses = -1.5dB Final Stage Device First level requirements: Pout = 47.5dBm average (8dB backoff) Pout = 55.5dBm peak Efficiency Signal bandwidth Other considerations: Gain, voltage, package / size, thermal performance AFT18H357 Asymmetric in-package Doherty device 28V LDMOS NI-1230XS-4L2L 55.5dBm peak power Avg. power of 47.5dBm Gain: 17.2 db Drain Efficiency: 50.5% External Use 30
Step 5 : Verify the Driver Selection Pre-Driver ADAM PA Output (2x) Pavg = 27.5dBm Psat = 38.5dBm Driver Doherty Final Driver Stage First level requirements: Pout = 30.5dBm (total) Pout = 27.5dBm from each driver Pout = 38.5dBm (each driver, 11dB backoff) Gain Other considerations: Efficiency, voltage, package / size, thermal performance AFT27S010N Wideband transistor 28V LDMOS PLD-1.5W package 10W peak output power Average power of 31dBm Gain: 21.5 db Drain Efficiency: 23% External Use 31
Step 6 : Pre-Driver Sizing Considerations Pre-Driver Single Ended Input ADAM Optimized Doherty Output Driver Doherty Final Advanced Doherty Alignment Module MMDS20254H ADAM allows for superior linearity-efficiency trade-offs while improving output power. Lineup considerations: 5.5dB of insertion loss includes the 3dB Doherty splitter. Advanced Doherty Alignment Module QFN 6x6 Doherty coupler together with digitally selectable phase shifters and step attenuators for improved Doherty performance External Use 32
Step 7 : Verify the Pre-Driver Selection Pre-Driver PA Output Pavg = 11dBm Psat = 23dBm ADAM Driver Doherty Final Pre-Driver MMZ25332B First level requirements: Pout = 23dBm peak Gain = at least 21dB Other considerations: Voltage, package / size, thermal performance, efficiency, signal bandwidth. 2-stage driver amplifier 5V GaAs QFN 3x3 33 dbm peak power Gain: 27 db External Use 33
40W 1.8GHz PA lineup Pre-Driver ADAM Driver Doherty Final MMZ25332B MMDS20254H AFT27S010N AFT18H357 2-stage driver amplifier 5V GaAs QFN 3x3 33 dbm peak power Gain: 27 db Advanced Doherty Alignment Module 5V QFN 6x6 Doherty coupler together with digitally selectable phase shifters and step attenuators for improved Doherty performance Wideband transistor 28V LDMOS PLD-1.5W package 10W peak output power Average power of 31dBm Gain: 21.5 db Drain Efficiency: 23% Asymmetric in-package Doherty device 28V LDMOS NI-1230XS-4L2L 55.5dBm peak power Avg. power of 47.5dBm Gain: 17.2 db Drain Efficiency: 50.5% External Use 34
High Performance PA Solutions from Freescale RF Pre-Driver ADAM Driver Doherty Final 1.8GHz (40W) MMDS20254H AFT27S010N (2x) AFT18H357 MMA25312B 2.6GHz (20W) MMDS25254H AFT27S006N (2x) A2T26H160 Type 2.6 GHz (20W) 1.8 GHz (40W) Line Up Performance Estimate Pavg @ PA*:44.5 dbm Ppeak*: 52.5 dbm LU Gain: 59 db Est LU Eff*: 42.0% Vdd: 28 V Pavg @ PA*:44.5 dbm Ppeak*: 52.5 dbm LU Gain: 59 db Est LU Eff*: 42.0% Vdd: 28 V * Measured at Doherty Output External Use 35
Freescale Advantage Technical Support Performance Custom circuit tuning Modeling Thermal characterization Reference designs Dedicated applications support Time to Market Performance DPD Doherty Drain modulation Switching PAs Manufacturing Supply Large volume supply Owned assembly and test Dedicated, in-house package R&D Quality and reliability Manufacturing & Quality BOM Innovation Airfast line of products 50 V LDMOS technology High ruggedness line ICs: Function integration Package leadership External Use 36
Designing with Freescale Tailored live, hands-on training in a city near you 2014 seminar topics include QorIQ product family update Kinetis K, L, E, V series MCU product training freescale.com/dwf External Use 37
www.freescale.com 2014 Freescale Semiconductor, Inc. External Use