TIP120, TIP121, TIP122 (); TIP125, TIP126, TIP127 () Preferred Devices Plastic MediumPower Complementary Silicon Transistors Designed for generalpurpose amplifier and lowspeed switching applications. Features High DC Current Gain h FE = 2500 (Typ) @ I C = 4.0 Adc CollectorEmitter Sustaining Voltage @ 100 madc V CEO(sus) = 60 Vdc (Min) TIP120, TIP125 = 80 Vdc (Min) TIP121, TIP126 = 100 Vdc (Min) TIP122, TIP127 Low CollectorEmitter Saturation Voltage V CE(sat) = Vdc (Max) @ I C = Adc = 4.0 Vdc (Max) @ I C = Adc Monolithic Construction with BuiltIn BaseEmitter Shunt Resistors PbFree Packages are Available* DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 6080100 VOLTS, 65 WATTS 1 2 3 4 AB CASE 221A STYLE 1 MARKING DIAGRAM TIP12xG AYWW TIP12x = Device Code x = 0, 1, 2, 5, 6, or 7 A = Assembly Location Y = Year WW = Work Week G = PbFree Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 7 November, 7 Rev. 7 1 Publication Order Number: TIP120/D
ÎÎ MAXIMUM RATINGS TIP120, TIP121, ÎÎÎ TIP122, Rating Symbol TIP125 TIP126 TIP127 Unit ÎÎ CollectorEmitter Voltage V CEO 60 80 100 Vdc ÎÎ CollectorBase Voltage V CB 60 80 100 Vdc ÎÎ EmitterBase Voltage V EB Vdc ÎÎ Collector Current Continuous I ÎÎÎ Peak C Adc 8.0 Î Base Current I B ÎÎ 120 madc ÎÎÎ Total Power Dissipation @ T C = 25 C P D ÎÎ 65 ÎÎÎ Derate above 25 C ÎÎÎ 2 W W/ C ÎÎÎ Total Power Dissipation @ T A = 25 C P D W Derate above 25 C 0.016 W/ C ÎÎ Unclamped Inductive Load Energy (Note 1) E 50 mj ÎÎ Operating and Storage Junction, Temperature Range T J, T stg 65 to + 150 C ÎÎ THERMAL CHARACTERISTICS ÎÎ Characteristic Symbol Max Unit ÎÎ Thermal Resistance, JunctiontoCase R JC 1.92 C/W ÎÎ Thermal Resistance, JunctiontoAmbient Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. I C = 1 A, L = 100 mh, P.R.F. = 10 Hz, V CC = 20 V, R BE = 100 R JA 62.5 C/W ORDERING INFORMATION Device Package Shipping TIP120 TIP120G (PbFree) TIP121 TIP121G (PbFree) TIP122 TIP122G (PbFree) TIP125 TIP125G (PbFree) TIP126 TIP126G (PbFree) TIP127 TIP127G (PbFree) 2
ÎÎ ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted) Characteristic Symbol Min ÎÎÎ Max Unit ÎÎ OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (Note 2) V CEO(sus) Vdc (I C = 100 madc, I B = 0) TIP120, TIP125ÎÎÎ 60 ÎÎÎ TIP121, TIP126 80 TIP122, TIP127ÎÎÎ 100 ÎÎÎ Collector Cutoff Current I CEO madc (V CE = 30 Vdc, I B = 0) TIP120, TIP125ÎÎÎ (V CE = 40 Vdc, I B = 0) TIP121, TIP126 (V CE = 50 Vdc, I B = 0) TIP122, TIP127 Collector Cutoff Current I CBO madc (V CB = 60 Vdc, I E = 0) TIP120, TIP125ÎÎÎ Î (V CB = 80 Vdc, I E = 0) TIP121, TIP126 (V CB = 100 Vdc, I E ÎÎÎ ÎÎÎ = 0) TIP122, TIP127 Emitter Cutoff Current I (V BE = Vdc, I C = 0) EBO Î madc ÎÎ ON CHARACTERISTICS (Note 2) DC Current Gain h FE (I C = Adc, V CE = Vdc) ÎÎÎ 1000 ÎÎÎ (I C = Adc, V CE = Vdc) 1000 ÎÎ CollectorEmitter Saturation Voltage V (I C = Adc, I B = 12 madc) CE(sat) Vdc (I C = Adc, I B = 20 madc) ÎÎÎ ÎÎÎ 4.0 BaseEmitter On Voltage V BE(on) ÎÎÎ 2.5 Vdc (I C = Adc, V CE = Vdc) ÎÎÎ DYNAMIC CHARACTERISTICS ÎÎ SmallSignal Current Gain h (I C = Adc, V CE = 4.0 Vdc, f = MHz) fe 4.0 Î Output Capacitance C ob pf (V CB = 10 Vdc, I E = 0, f = MHz TIP125, TIP126, TIP127ÎÎÎ ÎÎÎ TIP120, TIP121, TIP122 2. Pulse Test: Pulse Width s, Duty Cycle 2% T A 4.0 T C 80 P D, POWER DISSIPATION (WATTS) 60 40 20 T A T C 0 0 0 20 40 60 80 100 120 140 160 T, TEMPERATURE ( C) Figure 1. Power Derating 3
R B & R C VARIED TO OBTAIN DESIRED CURRENT LEVELS D 1 MUST BE FAST RECOVERY TYPE, eg: 1N5825 USED ABOVE I B 100 ma MSD6100 USED BELOW I B 100 ma V 2 approx + 8.0 V 0 V 1 approx 12 V t r, t f 10 ns DUTY CYCLE = % 25 s 51 Figure 2. Switching Times Test Circuit R B D 1 + 4.0 V R C TUT 8.0 k 120 V CC 30 V for t d and t r, D 1 is disconnected and V 2 = 0 For test circuit reverse all polarities. SCOPE t, TIME ( s) μ 0.7 0.07 0.05 t s V CC = 30 V I C /I B = 250 I B1 = I B2 0.7 7.0 10 Figure 3. Switching Times t f t d @ V BE(off) = 0 t r r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.7 D = Z JC(t) = r(t) R P JC (pk) R JC = 1.92 C/W MAX 0.07 0.05 D CURVES APPLY FOR POWER 0.05 PULSE TRAIN SHOWN 0.02 t 1 0.03 READ TIME AT t 1 t 2 T J(pk) T C = P (pk) Z JC(t) 0.02 DUTY CYCLE, D = t 1 /t 2 0.01 SINGLE PULSE 0.01 0.01 0.02 0.05 10 20 50 100 500 k t, TIME (ms) Figure 4. Thermal Response 4
20 10 0.05 0.02 500 s dc T J = 150 C BONDING WIRE LIMITED THERMALLY LIMITED 1 ms @ T C = 25 C (SINGLE PULSE) 5 ms SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED V CEO TIP120, TIP125 TIP121, TIP126 TIP122, TIP127 7.0 10 20 30 50 70 100 V CE, COLLECTOREMITTER VOLTAGE (VOLTS) 100 s Figure 5. ActiveRegion Safe Operating Area There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I C V CE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 150 C; T C is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) < 150 C. T J(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown h fe, SMALLSIGNAL CURRENT GAIN 10,000 5000 0 0 1000 500 100 50 30 20 10 T C = 25 C V CE = 4.0 Vdc I C = Adc 10 20 50 100 500 1000 f, FREQUENCY (khz) Figure 6. SmallSignal Current Gain C, CAPACITANCE (pf) 100 70 50 30 C ib C ob 10 20 50 100 V R, REVERSE VOLTAGE (VOLTS) Figure 7. Capacitance 5
TIP120, TIP121, TIP122 TIP125, TIP126, TIP127 h FE, DC CURRENT GAIN 20,000 10,000 5000 0 0 1000 500 T J = 150 C 25 C 55 C V CE = 4.0 V h FE, DC CURRENT GAIN 20,000 10,000 7000 5000 0 0 1000 700 500 T J = 150 C 25 C 55 C V CE = 4.0 V 0.7 7.0 10 Figure 8. DC Current Gain 0.7 7.0 10 V CE, COLLECTOREMITTER VOLTAGE (VOLTS) 2.6 2.2 1.8 1.4 I C = A 4.0 A 6.0 A 0.7 7.0 10 20 30 I B, BASE CURRENT (ma) V CE, COLLECTOREMITTER VOLTAGE (VOLTS) 2.6 2.2 1.8 1.4 Figure 9. Collector Saturation Region I C = A 4.0 A 6.0 A I B, BASE CURRENT (ma) 0.7 7.0 10 20 30 2.5 2.5 V, VOLTAGE (VOLTS) 1.5 V BE(sat) @ I C /I B = 250 V BE @ V CE = 4.0 V V CE(sat) @ I C /I B = 250 0.7 7.0 10 V, VOLTAGE (VOLTS) 1.5 V BE @ V CE = 4.0 V V BE(sat) @ I C /I B = 250 V CE(sat) @ I C /I B = 250 0.7 7.0 10 Figure 10. On Voltages 6
PACKAGE DIMENSIONS CASE 221A09 ISSUE AE H Q Z L V G B 4 1 2 3 N D A K F T U S R J C T SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. INCHES MILLIMETERS DIM MIN MAX MIN MAX A 70 0.620 14.48 15.75 B 80 0.405 9.66 18 C 60 90 4.07 4.82 D 0.025 0.035 0.64 0.88 F 42 61 3.61 4.09 G 0.095 05 2.42 2.66 H 10 55 2.80 3.93 J 0.014 0.025 6 0.64 K 00 62 12.70 14.27 L 0.045 0.060 1.15 1.52 N 90 10 4.83 5.33 Q 00 20 2.54 4 R 0.080 10 4 2.79 S 0.045 0.055 1.15 1.39 T 35 55 5.97 6.47 U 0.000 0.050 0.00 1.27 V 0.045 1.15 Z 0.080 4 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 3036752175 or 8003443860 Toll Free USA/Canada Fax: 3036752176 or 8003443867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 8002829855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81357733850 7 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative TIP120/D