Nch V 45A Power MOSFET Datasheet Outline V DSS V TO-2FM R DS(on) (Max.) 55mW I D P D 45A 4W (3) () (2) Features ) Low on-resistance. Inner circuit 2) Fast switching speed. 3) Drive circuits can be simple. 4) Parallel use is easy. 5) Pb-free lead plating ; RoHS compliant () Gate (2) Drain (3) Source * BODY DIODE 6) % Avalanche tested Packaging specifications Packaging Bulk Application Reel size (mm) - Switching Power Supply Tape width (mm) - Type Automotive Motor Drive Basic ordering unit (pcs) 5 Automotive Solenoid Drive Taping code - Marking RCX45N Absolute maximum ratings (T a = 25 C) Parameter Symbol Value Unit Drain - Source voltage V DSS V T c = 25 C Continuous drain current T c = C * I D * I D Pulsed drain current I D,pulse *2 45 A 24.4 A 8 A Gate - Source voltage V GSS 3 V Avalanche energy, single pulse E AS *3 6 mj Avalanche current I AS *3 22.5 A Power dissipation T c = 25 C T a = 25 C P D 4 W P D 2.23 W Junction temperature T j 5 C Range of storage temperature T stg -55 to +5 C /2 3.4 - Rev.A
Thermal resistance Parameter Symbol Values Min. Typ. Max. Unit Thermal resistance, junction - case R thjc - - 3.2 C/W Thermal resistance, junction - ambient R thja - - 56 C/W Soldering temperature, wavesoldering for s T sold - - 265 C Electrical characteristics (T a = 25 C) Parameter Symbol Conditions Values Min. Typ. Max. Unit Drain - Source breakdown voltage V (BR)DSS V GS = V, I D =.ma - - V Zero gate voltage drain current V DS = V, V GS = V I DSS T j = 25 C - -. V DS = V, V GS = V T j = 25 C - - ma Gate - Source leakage current I GSS V GS = 3V, V DS = V - - na Gate threshold voltage V GS (th) V DS = V, I D = ma 3. - 5. V Static drain - source on - state resistance R DS(on) V GS = V, I D = 22.5A - 42 55 V GS = V, I D = 22.5A T j = 25 C - 95 25 mw Forward transfer admittance g fs V DS = V, I D = 22.5A 7 34 - S 2/2 3.4 - Rev.A
Electrical characteristics (T a = 25 C) Parameter Symbol Conditions Values Min. Typ. Max. Unit Input capacitance C iss V GS = V - 4 - Output capacitance C oss V DS = 25V - 27 - pf Reverse transfer capacitance C rss f = MHz - 6 - Turn - on delay time t d(on) Rise time t r Turn - off delay time t d(off) V DD V, V GS = V - 52 - I D = 22.5A - 2 - R L = 4.4W - 9 - ns Fall time t f R G = W - 7 - Gate Charge characteristics (T a = 25 C) Parameter Symbol Conditions Values Min. Typ. Max. Unit Total gate charge Q g V DD V - 8 - Gate - Source charge Q gs I D = 45A - 28 - nc Gate - Drain charge Q gd V GS = V - 28 - Gate plateau voltage V (plateau) V DD V, I D = 45A - 7.2 - V Body diode electrical characteristics (Source-Drain)(T a = 25 C) Parameter Symbol Conditions Values Min. Typ. Max. Unit Continuous source current I * S T c = 25 C - - 45 A Pulsed source current I *2 SM - - 8 A Forward voltage V SD V GS = V, I S = 45A - -.5 V Reverse recovery time t rr Reverse recovery charge Q rr I S = 22.5A di/dt = A/ms - 3 - ns - 6 - nc * Limited only by maximum temperature allowed. *2 Pw ms, Duty cycle % *3 L 5mH, V DD = 5V, Rg = 25W, starting T j = 25 C Pulsed 3/2 3.4 - Rev.A
Fig. Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area Power Dissipation : P D /P D max. [%] 8 6 4 25 5 75 25 5 75. Operation in this area is limited by R DS(on) Single Pulse P W = ms P W = ms P W = ms.. Junction Temperature : T j [ C] Drain - Source Voltage : V DS [V] Normalized Transient Thermal Resistance : r (t) Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width T a = 25ºC Single Pulse R th(j-c)(t) = r (t) R th(ch-c) R th(j-c) = 56ºC/W. top D = D =.5 D =. D =.5 D =. D = Single..... Pulse Width : P W [s] 4/2 3.4 - Rev.A
Avalanche Current : I AS [A] Fig.4 Avalanche Current vs Inductive Load V DD =5V,R G =25W V GF =V,V GR =V Starting T ch =25ºC.. Coil Inductance : L [mh] Avalanche Energy : E AS / E AS max. [%] Fig.5 Avalanche Energy Derating Curve vs Junction Temperature 8 6 4 25 5 75 25 5 75 Junction Temperature : T j [ C] Fig.6 Typical Output Characteristics(I) Fig.7 Typical Output Characteristics(II) 5 5 Pulsed V GS =.V V GS =8.V V GS =5.5V V GS =7.V V GS =6.5V V GS =6.V.2.4.6.8 45 4 35 3 25 5 5 V GS =.V V GS =8.V Pulsed V GS =7.V V GS =6.5V V GS =6.V 2 4 6 8 Drain - Source Voltage : V DS [V] Drain - Source Voltage : V DS [V] 5/2 3.4 - Rev.A
Fig.8 Breakdown Voltage vs. Junction Temperature Fig.9 Typical Transfer Characteristics Normarize Drain - Source Breakdown Voltage : V (BR)DSS [V] 28 27 26 25 24 23 2 2 9 V GS = V I D = ma 8-5 -25 25 5 75 25 5.. V DS = V T a = 25ºC T a = 75ºC T a = 25ºC T a = -25ºC. 2 4 6 8 Junction Temperature : T j [ C] Gate - Source Voltage : V GS [V] Gate Threshold Voltage : V GS(th) [V] Fig. Gate Threshold Voltage vs. Junction Temperature 5. 4.5 4. 3.5 3. V DS = V I D = ma 2.5-5 -25 25 5 75 25 5 Junction Temperature : T j [ C] Fig. Transconductance vs. Drain Current Transconductance : g fs [S]. V DS = V T a = -25ºC T a =75ºC T a =25ºC... 6/2 3.4 - Rev.A
Static Drain - Source On-State Resistance : R DS(on) [mw] Fig.2 Static Drain - Source On - State Resistance vs. Gate Source Voltage 9 8 7 6 5 4 3 I D = 45A I D = 22.5A 5 5 Gate - Source Voltage : V GS [V] Static Drain - Source On-State Resistance : R DS(on) [mw] Fig.3 Static Drain - Source On - State Resistance vs. Drain Current(I) V GS = V.. Static Drain - Source On-State Resistance : R DS(on) [mw] Fig.4 Static Drain - Source On - State Resistance vs. Junction Temperature 8 6 4 V GS = V I D = 5A -5-25 25 5 75 25 5 Junction Temperature : T j [ºC] 7/2 3.4 - Rev.A
Fig.5 Static Drain - Source On - State Resistance vs. Drain Current(I) Fig.6 Drain Current Derating Curve Static Drain - Source On-State Resistance : R DS(on) [mw] V GS = V T a =25ºC T a =75ºC T a = -25ºC.. Drain Current Dissipation : I D /I D max. (%) 8 6 4 25 5 75 25 5 75 Junction Temperature : T j [ºC] 8/2 3.4 - Rev.A
Fig.7 Typical Capacitance vs. Drain - Source Voltage Fig.8 Switching Characteristics C iss Capacitance : C [pf] T a = 25ºC f = MHz V GS = V C rss C oss.. Switching Time : t [ns] t d(on) t r t f t d(off) V DD = V V GS = V R G =W. Drain - Source Voltage : V DS [V] Fig.9 Dynamic Input Characteristics Gate - Source Voltage : V GS [V] 5 5 V DD = V I D = 45A R G =W 4 6 8 4 6 Total Gate Charge : Q g [nc] 9/2 3.4 - Rev.A
Fig. Source Current vs. Source - Drain Voltage Fig2 Reverse Recovery Time vs.source Current V GS =V Source Current : I S [A]. T a =25ºC T a =75ºC T a = -25ºC Reverse Recovery Time : t rr [ns] di / dt = A / ms V GS = V...5.. Source-Drain Voltage : V SD [V] Source Current : I S [A] /2 3.4 - Rev.A
Measurement circuits Fig.- Switching Time Measurement Circuit Fig.-2 Switching Waveforms Fig.2- Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Fig.3- Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform /2 3.4 - Rev.A
Dimensions (Unit : mm) TO-2FM D A E E φ p A A2 F b L A4 A Q e b x A c DIM MILIMETERS INCHES MIN MAX MIN MAX A 6.6 7.6.654.693 A.8 2..7.87 A2 4.8 5.4.583.66 A4 6.8 7..268.283 b.7.85.28.33 b..5.43.59 c.7.85.28.33 D 9.9.3.39.46 E 4.4 4.8.73.89 e 2.54. E 2.7 3..6.8 F 2.8 3...26 L.5 2.5.453.492 p 3. 3.4.8.34 Q 2. 3..83.22 x -.38 -.5 Dimension in mm/inches 2/2 3.4 - Rev.A
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