Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

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Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

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Transcription:

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com

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v1.14 AMPLIFIER, 18-4 GHz Typical Applications The is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios & VSAT LO Driver for Mixers Military & Space Functional Diagram Features Gain: 18. db [2] P1dB: +22 dbm [2] Output IP3: +27 dbm Saturated Power: +23. dbm @ 1% PAE [2] Supply Voltage: +V @ 28 ma Ohm Matched Input/Output 24 Lead Ceramic 4x4mm SMT Package: 16mm 2 General Description The is a GaAs PHEMT MMIC Driver Amplifier die which operates between 18 and 4 GHz. The amplifier provides 18. db of gain, +27 dbm Output IP3, and +22 dbm of output power at 1 db gain compression, while requiring 28 ma from a +V supply. Ideal as a driver amplifier for microwave radio applications, or as an LO driver for mixers operating between 18 and 4 GHz, the is capable of providing up to +23. dbm of saturated output power at 1% PAE. The amplifier s I/Os are DC blocked and internally matched to Ohms making it ideal for integration into Multi-Chip-Modules (MCMs). Electrical Specifications T A = +2 C, Vdd= Vdd1, 2, 3, 4 = +V, Idd= Idd1 + Idd2 + Idd3 + Idd4 = 28mA [1] Parameter Min. Typ. Max. Min. Typ. Max. Units Frequency Range 18-36 36-4 GHz Gain [2] 1 18. 1 17. db Gain Variation Over Temperature.4.6.4.6 db/ C Input Return Loss 13 7 db Output Return Loss 1 7 db Output Power for 1 db Compression (P1dB) [2] 19 22 16 21 dbm Saturated Output Power (Psat) [2] 23. 21. dbm Output Third Order Intercept (IP3) 22 27 21 26 dbm Noise Figure [2] 7 7 db Total Supply Current (Idd1 + Idd2 + Idd3 + Idd4) 28 28 ma [1] Adjust Vgg1 = Vgg2 between -2 to V to achieve Idd= 28 ma Typical. [2] Board loss subtracted out for gain, power and noise figure measurements. 1 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 1824 Phone: 978-2-3343 Fax: 978-2-3373 Order On-line at www.hittite.com Application Support: Phone: 978-2-3343 or apps@hittite.com

v1.14 AMPLIFIER, 18-4 GHz Broadband Gain & Return Loss [1] Gain vs. Temperature [1] 2 2 RESPONSE (db) 1 - -1 S21 S11 S22-2 1 1 2 2 3 3 4 4 Input Return Loss vs. Temperature RETURN LOSS (db) - -1-1 - 4C -2 Output Return Loss vs. Temperature P1dB vs. Temperature [1] Psat vs. Temperature [1] 26 GAIN (db) RETURN LOSS (db) 2 1 1 - -1-1 -2-4C -2 26-4C 24 24 P1dB (dbm) 22 2-4C Psat (dbm) 22 2-4C 18 18 16 16 [1] Board loss subtracted out for gain, power and noise figure measurements. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 1824 Phone: 978-2-3343 Fax: 978-2-3373 Order On-line at www.hittite.com Application Support: Phone: 978-2-3343 or apps@hittite.com 2

v1.14 AMPLIFIER, 18-4 GHz Power Compression @ 3 GHz [1] 3 Power Compression @ 4 GHz [1] 3 Pout (dbm), GAIN (db), PAE (%) Output IP3 vs. Temperature Noise Figure vs. Temperature [1] IP3 (dbm) 2 2 1 1 4 36 32 28 24 2 Pout (dbm) Gain (db) PAE (%) -1-1 - 1 INPUT POWER (dbm) +2 C -4 C 16 Gain & Power vs. Supply Voltage @ 3 GHz [1] Pout (dbm), GAIN (db), PAE (%) NOISE FIGURE (db) 2 2 1 1-1 -1-1 1 12 9 6 3 Pout (dbm) Gain (db) PAE (%) INPUT POWER (dbm) +2 C -4 C Reverse Isolation vs. Temperature 26 GAIN (db), P1dB (dbm), Psat (dbm) 24 22 2 18 Gain P1dB Psat ISOLATION (db) -1-2 -3-4 - -6-4C 16 4. 4.7 4.9.1.3. Vdd (V) -7 [1] Board loss subtracted out for gain, power and noise figure measurements. 3 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 1824 Phone: 978-2-3343 Fax: 978-2-3373 Order On-line at www.hittite.com Application Support: Phone: 978-2-3343 or apps@hittite.com

v1.14 AMPLIFIER, 18-4 GHz Absolute Maximum Ratings Typical Supply Current vs. Vdd Drain Bias Voltage (Vdd1, 2, 3, 4) Gate Bias Voltage (Vgg1, Vgg2) RF Input Power (RFIN)(Vdd = + Vdc) +.V -3 to V 1 dbm Channel Temperature 17 C Continuous Pdiss (T= 7 C) (derate 1.1 mw/ C above 7 C) Thermal Resistance (channel to package base) 1.7 W 66.4 C/W Storage Temperature -6 to +1 C Operating Temperature - to +7 C Outline Drawing Vdd (V) Idd (ma) 4. 277. 28. 286 Note: Amplifier will operate over full voltage ranges shown above ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS NOTES: 1. PACKAGE BODY MATERIAL: ALUMINA 2. LEAD AND GROUND PADDLE PLATING: 3-8 MICROINCHES GOLD OVER MICROINCHES MINIMUM NICKEL. 3. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE.. PACKAGE WARP SHALL NOT EXCEED.mm DATUM -C- 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. Package Information Part Number Package Body Material Lead Finish MSL Rating Package Marking [2] [1] H63 Alumina, White Gold over Nickel MSL3 XXXX [1] Max peak reflow temperature of 26 C [2] 4-Digit lot number XXXX For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 1824 Phone: 978-2-3343 Fax: 978-2-3373 Order On-line at www.hittite.com Application Support: Phone: 978-2-3343 or apps@hittite.com 4

v1.14 AMPLIFIER, 18-4 GHz Pin Descriptions Pin Number Function Description Interface Schematic 1, 2, 4-8, 1, 12-1, 17-19, 24, Ground Paddle GND 3 RFIN 16 RFOUT 9, 11 Vgg1, Vgg2 2-23 Vdd4 - Vdd1 Application Circuit These pins and package bottom must be connected to RF/DC ground This pad is AC coupled and matched to Ohms. This pad is AC coupled and matched to Ohms. Gate control for amplifier, please follow MMIC Amplifier Biasing Procedure application note. See assembly diagram for required external components. Power Supply Voltage for the amplifier. See assembly diagram for required external components. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 1824 Phone: 978-2-3343 Fax: 978-2-3373 Order On-line at www.hittite.com Application Support: Phone: 978-2-3343 or apps@hittite.com

v1.14 AMPLIFIER, 18-4 GHz Evaluation PCB List of Materials for Evaluation 122763 [1] Item J1 - J2 VD1 - VD4, VGG1, VGG2 C1 - C6 C7 - C12 C13 - C18 U1 Description 2.92 mm PC Mount K-Connector DC Pin 1 pf Capacitor, 42 Pkg. 1 pf Capacitor, 63 Pkg. 4.7 µf Capacitor, Tantalum, Case A Driver Amplifier PCB [2] 122761 Evaluation PCB [3] [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 43 or Arlon 2FR [3] Due to the very high frequency operation of this product a custom LC4 PCB footprint and solder stencil are required for this design. Performance shown in this data sheet was produced using this custom footprint. DO NOT USE Hittite s standard LC4 footprint. Please contact Applications for details. The circuit board used in the application should use RF circuit design techniques. Signal lines should have Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 1824 Phone: 978-2-3343 Fax: 978-2-3373 Order On-line at www.hittite.com Application Support: Phone: 978-2-3343 or apps@hittite.com 6