DISCRETE SEMICONDUCTORS DATA SHEET BFR File under Discrete Semiconductors, SC4 September 99
BFR FEATURES High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability. telephones (CT, CT, DECT, etc.), radar detectors, pagers and satellite TV tuners (SATV) and repeater amplifiers in fibre-optic systems. The transistor is encapsulated in a plastic SOT3 envelope. page 3 DESCRIPTION The BFR is an npn silicon planar epitaxial transistor, intended for applications in the RF frontend in wideband applications in the GHz range, such as analog and digital cellular telephones, cordless PINNING PIN DESCRIPTION Code: N8 base emitter 3 collector Top view MSB3 Fig. SOT3. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V CBO collector-base voltage V V CES collector-emitter voltage R BE = V I C DC collector current 7 ma P tot total power dissipation up to T s = 97 C; note 3 mw h FE DC current gain I C = ma; V CE = 6 V 6 C re feedback capacitance I C =i c = ; V CB = 6 V; f = MHz.4 pf f T transition frequency I C = ma; V CE = 6 V; f = GHz 9 GHz maximum unilateral power gain I C = ma; V CE = 6 V; T amb = C; f = 9 MHz I C = ma; V CE = 6 V; T amb = C; f = GHz S insertion power gain I C = ma; V CE = 6 V; T amb = C; f = 9 MHz F noise figure Γ s = Γ opt ;I C = ma; V CE = 6 V; T amb = C; f = 9 MHz Γ s = Γ opt ;I C = ma; V CE = 6 V; T amb = C; f = 9 MHz Γ s = Γ opt ;I C = ma; V CE = 8 V; T amb = C; f = GHz Note. T s is the temperature at the soldering point of the collector tab. db 9 db 3 4 db..6 db.6. db.9 db September 99
BFR LIMITING VALUES In accordance with the Absolute Maximum System (IEC 34). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V CBO collector-base voltage open emitter V V CES collector-emitter voltage R BE = V V EBO emitter-base voltage open collector. V I C DC collector current 7 ma P tot total power dissipation up to T s =97 C; note 3 mw T stg storage temperature 6 C T j junction temperature 7 C THERMAL RESISTANCE SYMBOL PARAMETER THERMAL RESISTANCE R th j-s from junction to soldering point (note ) 6 K/W Note. T s is the temperature at the soldering point of the collector tab. September 99 3
BFR CHARACTERISTICS T j = C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I CBO collector cut-off current I E = ; V CB = 6 V na h FE DC current gain I C = ma; V CE = 6 V 6 C e emitter capacitance I C = i c = ; V EB =. V; f = MHz pf C c collector capacitance I E =i e = ; V CB = 6 V; f = MHz. pf C re feedback capacitance I C = ; V CB = 6 V; f = MHz.4 pf f T transition frequency I C = ma; V CE = 6 V; f = GHz 9 GHz maximum unilateral power gain (note ) Notes. is the maximum unilateral power gain, assuming S is zero and. I C = ma; V CE =6 V;R L =Ω;T amb = C; f p = 9 MHz; f q = 9 MHz; measured at f (p q) = 898 MHz and f (q p) = 94 MHz. I C = ma; V CE = 6 V; T amb = C; f = 9 MHz I C = ma; V CE = 6 V; T amb = C; f = GHz S insertion power gain I C = ma; V CE = 6 V; T amb = C; f = 9 MHz F noise figure Γ s = Γ opt ;I C = ma; V CE = 6 V; T amb = C; f = 9 MHz Γ s = Γ opt ;I C = ma; V CE = 6 V; T amb = C; f = 9 MHz Γ s = Γ opt ;I C = ma; V CE = 6 V; T amb = C; f = GHz P L output power at db gain compression I C = ma; V CE =6 V;R L =Ω; T amb = C; f = 9 MHz db 9 db 3 4 db..6 db.6. db.9 db 7 dbm ITO third order intercept point note 6 dbm S = log ------------------------------------------------------------- db. S S September 99 4
BFR handbook, 4 halfpage P tot (mw) 3 MRA7 - h FE MRA73 T ( o s C) I C (ma) V CE = 6 V. Fig. Power derating curve. Fig.3 DC current gain as a function of collector current..6 MRA74 MRA7 C re (pf) f T (GHz) V CE = 6V.4 8 V CE = 3V. 4 4 8 V CB (V) I C (ma) i C = ; f = MHz. T amb = C; f = GHz. Fig.4 Feedback capacitance as a function of collector-base voltage. Fig. Transition frequency as a function of collector current. September 99
BFR handbook, gainhalfpage MRA76 gain MRA77 MSG G max G max 3 I C (ma) 3 I C (ma) V CE = 6 V; f = 9 MHz. V CE = 6 V; f = GHz. Fig.6 Gain as a function of collector current. Fig.7 Gain as a function of collector current. gain 4 MRA78 gain 4 MRA79 3 3 MSG MSG G max G max 3 f (MHz) 4 3 f (MHz) 4 V CE = 6 V; I c = ma. V CE = 6 V; I c = ma. Fig.8 Gain as a function of frequency. Fig.9 Gain as a function of frequency. September 99 6
BFR F min 4 MRA74 f = 9 MHz MHz G ass F I min C = ma 4 ma G ass MRA7 G ass 3 G ass MHz 3 MHz MHz F min I C (ma) V CE = 6 V. 9 MHz MHz ma F min ma 3 f (MHz) 4 V CE = 6 V. Fig. Minimum noise figure and associated available gain as functions of collector current. Fig. Minimum noise figure and associated available gain as functions of frequency. handbook, full pagewidth stability circle 9. pot. unst. region 3. 4.8.6. F min =. db.4 Γ OPT. 8.. F =. db. F = db F = 3 db 3. 4 Z o =Ω. V CE = 6 V; I C = ma; f = 9 MHz. 9 Fig. Noise circle figure. MRA76. September 99 7
BFR handbook, full pagewidth 9. 3. 4.8 8. Γ MS G max = 9.3 db F = db F min =. 9 db F = 3 db F =. db Γ. OPT.6.4. G = 9 db. G = 8 db G = 7 db 3. 4 Z o =Ω. V CE = 6 V; I C = ma; f = MHz. 9 Fig.3 Noise circle figure. MRA77. September 99 8
BFR handbook, full pagewidth 9. 3. 4.8.6..4 3 GHz. 8.. 4 MHz. V CE = 6 V; I C = ma. Z o =Ω.. 3 4 MRA7 9 Fig.4 Common emitter input reflection coefficient (S ).. handbook, full pagewidth 9 3 4 4 MHz 8 4 3 3 GHz 3 4 9 MRA7 V CE = 6 V; I C = ma. Fig. Common emitter forward transmission coefficient (S ). September 99 9
BFR handbook, full pagewidth 9 3 4 3 GHz 8..4.3.. 4 MHz 3 4 9 MRA7 V CE = 6 V; I C = ma. Fig.6 Common emitter reverse transmission coefficient (S ). handbook, full pagewidth 9. 3. 4.8.6..4. 8.. 4 MHz. 3 GHz V CE = 6 V; I C = ma. Z o =Ω.. 3 4 MRA73 9 Fig.7 Common emitter output reflection coefficient (S ).. September 99
BFR PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT3 D B E A X H E v M A 3 Q A A c e bp w M B Lp e detail X mm scale DIMENSIONS (mm are the original dimensions) UNIT A A max.. mm..9 b p c D E e e H E L p Q v w.48.38..9 3..8.4..9.9...4...4.. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE SOT3 97--8 September 99
BFR DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 34). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 99