NSSC2MZ4, NSVC2MZ4 V, 2. A, Low V CE(sat) NPN Transistor ON Semiconductor s e 2 PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (V CE(sat) ) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are DC DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e 2 PowerEdge devices to be driven directly from PMU s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. Features NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC Q Qualified and PPAP Capable These Devices are Pb Free, Halogen Free and are RoHS Compliant MAXIMUM RATINGS (T A = ) Rating Symbol Max Unit Collector-Emitter Voltage V CEO Vdc Collector-Base Voltage V CBO 4 Vdc Emitter-Base Voltage V EBO 7. Vdc Collector Current Continuous I C 2. A Collector Current Peak I CM 3. A THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation T A = Derate above Thermal Resistance, Junction to Ambient Total Device Dissipation T A = Derate above Thermal Resistance, Junction to Ambient Total Device Dissipation (Single Pulse < sec.) Junction and Storage Temperature Range P D (Note ) 8 6.5 mw mw/ C R JA (Note ) 55 C/W P D (Note 2) 2. 5.6 W mw/ C R JA (Note 2) 64 C/W P Dsingle (Note 3) T J, T stg 7 mw 55 to +5 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.. FR 4 @ 7.6 mm 2, oz. copper traces. 2. FR 4 @ 645 mm 2, oz. copper traces. 3. Thermal response. C VOLTS, 2. AMPS NPN LOW V CE(sat) TRANSISTOR BASE A Y W C2 COLLECTOR 2,4 3 EMITTER ORDERING INFORMATION Device Package Shipping NSSC2MZ4TG NSVC2MZ4TG NSSC2MZ4T3G SOT 223 CASE 38E STYLE PIN ASSIGNMENT 4 C B C E 2 3 Top View Pinout SOT 223 (Pb Free) MARKING DIAGRAM / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8/D. AYW C2 = Assembly Location = Year = Work Week = Specific Device Code = Pb Free Package SOT 223 (Pb Free) 4/ Tape & Reel Semiconductor Components Industries, LLC, 23 March, 23 Rev. 4 Publication Order Number: NSSC2MZ4/D
NSSC2MZ4, NSVC2MZ4 ELECTRICAL CHARACTERISTICS (T A = unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage (I C = madc, I B = ) V (BR)CEO Vdc Collector Base Breakdown Voltage (I C =. madc, I E = ) V (BR)CBO 4 Vdc Emitter Base Breakdown Voltage (I E =. madc, I C = ) V (BR)EBO 7. Vdc Collector Cutoff Current (V CB = 4 Vdc, I E = ) I CBO na Emitter Cutoff Current (V EB = 6. Vdc) I EBO 5 na ON CHARACTERISTICS DC Current Gain (Note 4) (I C = ma, V CE = 2. V) (I C = 5 ma, V CE = 2. V) (I C =. A, V CE = 2. V) (I C = 2. A, V CE = 2. V) Collector Emitter Saturation Voltage (Note 4) (I C =. A, I B =. A) (I C =.5 A, I B =.5 A) (I C =. A, I B =. A) (I C = 2. A, I B =.2 A) Base Emitter Saturation Voltage (Note 4) (I C =. A, I B =. A) h FE 5 2 8 4 36 V CE(sat).3.6..8 V BE(sat). V V Base Emitter Turn on Voltage (Note 4) (I C =. A, V CE = 2. V) V BE(on).85 V Cutoff Frequency (I C = ma, V CE = 5. V, f = MHz) f T MHz Input Capacitance (V EB =.5 V, f =. MHz) Cibo 35 pf Output Capacitance (V CB = 3. V, f =. MHz) Cobo 22 pf 4. Pulsed Condition: Pulse Width = 3 msec, Duty Cycle 2%. TYPICAL CHARACTERISTICS 2.5 P D, POWER DISSIPATION (W) 2..5..5 T C T A 25 5 75 25 5 T, TEMPERATURE ( C) Figure. Power Derating 2
NSSC2MZ4, NSVC2MZ4 TYPICAL CHARACTERISTICS h RE, DC CURRENT GAIN 4 36 V CE = 2 V 5 C 32 28 24 2 6 2 8 4 Figure 2. DC Current Gain h RE, DC CURRENT GAIN 4 36 V CE = 4 V 32 5 C 28 24 2 6 2 8 4 Figure 3. DC Current Gain V BE(sat), COLLECTOR EMITTER SATURATOIN VOLTAGE (V). I C /I B = 5 C V CE(sat), COLLECTOR EMITTER SATURATOIN VOLTAGE (V). I C /I B = 2 5 C. Figure 4. Collector Emitter Saturation Voltage. Figure 5. Collector Emitter Saturation Voltage V BE(sat), BASE EMITTER SATUR- ATOIN VOLTAGE (V).4.2.8.6.4.2 I C /I B = 5 C Figure 6. Base Emitter Saturation Voltage V BE(sat), BASE EMITTER SATUR- ATOIN VOLTAGE (V).4.2.8.6.4.2 I C /I B = 5 5 C Figure 7. Base Emitter Saturation Voltage 3
NSSC2MZ4, NSVC2MZ4 TYPICAL CHARACTERISTICS V BE(on), BASE EMITTER VOLTAGE (V).2..8.6.4.2 V CE = 2 V 5 C. Figure 8. Base Emitter Voltage V CE(sat), COLLECTOR EMITTER SATURATOIN VOLTAGE (V)...5 A I C =. A T J =..... A 2 A I B, BASE CURRENT (A) Figure 9. Collector Saturation Region 3 A 4 5 C IB, INPUT CAPACITANCE (pf) 35 3 25 2 5 5 T J = ft EST = MHz C OB, OUTPUT CAPACITANCE (pf) 45 4 35 3 25 2 5 5 T J = ft EST = MHz 2 3 4 5 6 7 8 V EB, BASE EMITTER VOLTAGE (V) Figure. Input Capacitance 2 3 4 5 6 7 8 9 V CB, COLLECTOR BASE VOLTAGE (V) Figure. Output Capacitance f Tau, CURRENT GAIN BANDWIDTH (MHz) 2 8 6 4 2 T J = ft EST = MHz V CE = 5 V Figure 2. Current Gain Bandwidth Product...5 ms ms ms ms T J = V CE, COLLECTOR EMITTER VOLTAGE (V) Figure 3. Safe Operating Area 4
NSSC2MZ4, NSVC2MZ4 PACKAGE DIMENSIONS D b SOT 223 (TO 26) CASE 38E 4 ISSUE N NOTES:. DIMENSIONING AND TOLERANCING PER ASME Y4.5M, 994. 2. CONTROLLING DIMENSION: INCH..8 (3) H E e 4 2 3 e A A b E L L C SOLDERING FOOTPRINT* MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX A.5.63.75.6.64.68 A.2.6...2.4 b.6.75.89.24.3.35 b 2.9 3.6 3.2.5.2.26 c.24.29.35.9.2.4 D 6.3 6.5 6.7.249.256.263 E 3.3 3.5 3.7.3.38.45 e 2.2 2.3 2.4.87.9.94 e.85.94.5.33.37.4 L.2.8 L.5.75 2..6.69.78 H E 6.7 7. 7.3.264.276.287 STYLE : PIN. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 3.8.5 2..79 2.3.9 2.3.9 6.3.248 2..79.5.59 SCALE 6: mm inches *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 563, Denver, Colorado 827 USA Phone: 33 675 275 or 8 344 386 Toll Free USA/Canada Fax: 33 675 276 or 8 344 3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 8 282 9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 42 33 79 29 Japan Customer Focus Center Phone: 8 3 587 5 5 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NSSC2MZ4/D
Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: ON Semiconductor: NSVC2MZ4TG