Three phase bridge. (Power Module), 200 A

Similar documents
Three Phase Bridge, 130 A to 160 A (Power Modules)

Three Phase Bridge (Power Modules), 90/110 A

Standard Diodes (Super MAGN-A-PAK Power Modules), 600 A

Single phase bridge. (Power Modules), 25 A / 35 A

Three Phase Bridge (Power Modules), 25 A to 35 A

Single phase bridge. (Power Modules), 25 A/35 A

Power Rectifier Diodes (T-Modules), 2200 V, 20 A

Three Phase Bridge, 300 A (Power Modules)

Standard Recovery Diodes (Stud Version), 12 A

Three Phase AC Switch (Power Modules), 50 A to 100 A

Three Phase Bridge, 160 A (Power Modules)

Single phase bridge. (Power Modules), 25 A, 35 A

Three Phase Bridge (Power Modules), 25 A to 35 A

Power Modules, Passivated Assembled Circuit Elements, 25 A

Standard Recovery Diodes, (Stud Version), 200 A

Standard Recovery Diodes (Stud Version), 300 A

VS-T40HF..., VS-T70HF..., VS-T85HF..., VS-T110HF... Series Power Rectifiers Diodes (T-Modules), 40 A to 110 A

Single Phase Bridge Rectifier, 2 A

Three Phase Bridge (Power Module), 45 A to 100 A

Standard Recovery Diodes (Stud Version), 400 A

Standard Recovery Diodes, (Stud Version), 400 A

Power Modules, Passivated Assembled Circuit Elements, 40 A

Standard Recovery Diodes, (Stud Version), 300 A

Three Phase Bridge (Power Modules), 25/35 A

Standard Recovery Diodes, (Stud Version), 40 A

Standard Recovery Diodes (Stud Version), 150 A

VS-VSKD91.., VS-VSKC91.., VS-VSKJ91.., VS-VSKE91.. ADD-A-PAK Gen 7 Power Modules Standard Diodes, 100 A

Single Phase Rectifier Bridge, 1.9 A

Thyristor / Diode (Super MAGN-A-PAK Power Modules), 570 A

Fast Recovery Diodes (Stud Version), 40 A, 70 A, 85 A

Phase Control Thyristors (Stud Version), 110 A

Standard Recovery Diodes, Generation 2 DO-5 (DO-203AB) (Stud Version), 80 A

Standard Recovery Diodes, 400 A

Standard Recovery Diodes Generation 2 DO-5 (DO-203AB) (Stud Version), 95 A

Standard Recovery Diodes, Generation 2 DO-5 (Stud Version), 80 A

Single Phase Rectifier Bridge, 1.2 A

VS-85HF(R), VS-86HF(R), VS-87HF(R), VS-88HF(R) Series Standard Recovery Diodes, (Stud Version), 85 A

HEXFRED Ultrafast Diodes, 100 A (INT-A-PAK Power Modules)

Standard Recovery Diodes (Stud Version), 70 A

Three Phase Bridge (Power Modules), 25/35 A

Thyristor/Thyristor, 150 A (INT-A-PAK Power Module)

Phase Control Thyristors (Stud Version), 300 A

Fast Recovery Diodes (Stud Version), 6 A, 12 A, 16 A

FRED Pt Gen 4 Single Ultrafast Diode, 500 A (INT-A-PAK Power Modules)

High Performance Schottky Rectifier, 240 A

MT..KB SERIES 60 A 70 A. Power Modules THREE PHASE BRIDGE. Features. Description. Major Ratings and Characteristics. Bulletin I27500 rev.

Medium Power Silicon Rectifier Diodes, (Stud Version), 12 A

Standard Recovery Diodes, (Stud Version), 85 A

VS-1N1183, VS-1N3765, VS-1N1183A, VS-1N2128A Series Power Silicon Rectifier Diodes, (Stud Version), 35 A, 40 A, 60 A

Power Rectifier Diodes (T-Modules), 40 A to 110 A

MT..KB SERIES 130 A 160 A THREE PHASE BRIDGE. Power Modules. Features. Description. Major Ratings and Characteristics. Bulletin I /97

Single Phase Bridge (Power Modules), 25/35 A

Inverter Grade Thyristors (Stud Version), 85 A

Standard Recovery Diodes (Stud Version), 150 A

Insulated Single Phase Hyperfast Bridge (Power Modules), 60 A

Standard Recovery Diodes, (Hockey PUK Version), 800 A

VS-VSKD91.., VS-VSKC91.., VS-VSKJ91.., VS-VSKE91.. Series ADD-A-PAK Generation VII Power Modules Standard Diodes, 100 A

High Voltage, Input Rectifier Diode, 20 A

VS-1N1183, VS-1N3765, VS-1N1183A, VS-1N2128A Series Power Silicon Rectifier Diodes, (Stud Version), 35 A, 40 A, 60 A

Phase Control Thyristors (Stud Version), 330 A

HEXFRED Ultrafast Diodes, 300 A (INT-A-PAK Power Modules)

Phase Control Thyristors (Stud Version), 110 A

AAP Gen 7 (TO-240AA) Power Modules Schottky Rectifier, 200 A

MT..KPbF SERIES 130 A 160 A THREE PHASE BRIDGE. Power Modules. Features. Description. Major Ratings and Characteristics. Bulletin I /06

High Voltage, Input Rectifier Diode, 10 A

Single Phase Rectifier Bridge, 3 A, 6 A

Thyristor/Thyristor (MAGN-A-PAK Power Modules), 320 A

HEXFRED Ultrafast Diodes, 300 A (INT-A-PAK Power Modules)

Single Phase Rectifier Bridge, 2 A

Medium Power Phase Control Thyristors (Stud Version), 16 A

ADD-A-PAK Generation VII Power Modules Thyristor/Diode and Thyristor/Thyristor, 45 A/60 A

Standard Recovery Diodes (Stud Version), 150 A

Single Phase Rectifier Bridge, 1.2 A

AAP Gen 7 (TO-240AA) Power Modules Thyristor/Thyristor, 105 A

High Performance Schottky Rectifier, 240 A

Input Rectifier Diode, 60 A

Standard Recovery Diodes, (Hockey PUK Version), 2100 A

Input Rectifier Diode, 80 A

MT..KB SERIES 90 A 110 A. Power Modules THREE PHASE BRIDGE. Features. Description. Major Ratings and Characteristics. Bulletin I27501 rev.

SCR/SCR and SCR/Diode (MAGN-A-PAK Power Modules), 170 A, 250 A

Phase Control Thyristor RMS SCRs, 25 A, 35 A

VS-VSKT91.., VS-VSKH91.., VS-VSKL91.., VS-VSKN91.. Series

Medium Power Phase Control Thyristors (Stud Version), 50 A

Single Phase Rectifier Bridge, 1.9 A

Standard Recovery Diodes, (Stud Version), 85 A

Fast Recovery Diodes (Stud Version), 6 A, 12 A, 16 A

VS-70TPS12PbF, VS-70TPS16PbF High Voltage Series Thyristor High Voltage, Phase Control SCR, 70 A

Standard Recovery Diodes, (Hockey PUK Version), 3000 A

Insulated Gen 2 Schottky Rectifier Module, 300 A

Standard Recovery Diodes (Stud Version), 150 A

High Performance Schottky Rectifier, 100 A

Medium Power Phase Control Thyristors (Stud Version), 50 A

High Performance Schottky Rectifier, 400 A

Surface Mount Fast Soft Recovery Rectifier Diode, 10 A

High Performance Schottky Rectifier, 100 A

High Performance Schottky Rectifier, 100 A

Inverter Grade Thyristors (Stud Version), 300 A

High Voltage Surface Mountable Input Rectifier Diode, 8 A

Single Phase Rectifier Bridge, 2 A

INT-A-PAK Half Bridge IGBT (Standard Speed IGBT), 200 A

Transcription:

Three Phase Bridge (Power Module), 2 A VS-2MT4KPbF MTK PRIMARY CHARACTERISTICS I O 2 A V RRM 4 V Package MTK Circuit configuration Three phase bridge FEATURES Package fully compatible with the industry standard INT-A-PAK power modules series High thermal conductivity package, electrically insulated case Low power loss Excellent power volume ratio, outline for easy connections to power transistor and IGBT modules 4 V RMS isolating voltage UL E78996 approved Designed and qualified for industrial level Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION It extends the existing range of MT...KB bridges an extremely compact, encapsulated three phase bridge rectifiers offering efficient and reliable operation. They are intended for use in general purpose and heavy duty applications. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS 2 A I O T C 85 C 5 Hz 18 I FSM A 6 Hz 188 I 2 t 5 Hz 16.2 6 Hz 14.7 ka 2 s I 2 t 162 ka 2 s V RRM 4 V T Stg Range -4 to +15 C T J ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER V RRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V V RSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V I RRM MAXIMUM AT T J = 15 C ma VS-2MT4KPbF 4 5 6 Revision: 14-Sep-17 1 Document Number: 94355 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91

VS-2MT4KPbF FORWARD CONDUCTION PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum RMS output current 2 A I at case temperature O 12 rect. conduction angle 85 C t = 1 ms No voltage 18 Maximum peak, one-cycle 188 forward. non-repetitive on state I TSM surge current t = 1 ms 1 % V RRM 152 A 159 Initial T J = T J maximum t = 1 ms No voltage 16.2 Maximum I 2 t for fusing I 2 t 14.7 t = 1 ms 1 % V RRM 11.6 ka 2 s 12.6 Maximum I 2 t for fusing I 2 t t =.1 ms to 1 ms, no voltage reapplied 162 ka 2 s Value of threshold voltage V F(TO).76 V T J maximum Slope resistance r t 2.4 m Maximum forward voltage drop V FM I pk = 2 A, T J = 25 C, t p = 4 μs single junction 1.4 Isolation voltage V ISOL T J = 25 C all terminal shorted, f = 5 Hz, t = 1 s 4 V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction operating and storage temperature range T J, T Stg -4 to +15 C Maximum thermal resistance, junction to case Maximum thermal resistance, case to heatsink per module Mounting torque ± 1 % to heatsink R thjc R thcs DC operation per module.12 DC operation per junction.69 12 rect. conduction angle per module.14 12 rect. conduction angle per junction.82 Mounting surface smooth, flat and greased. Heatsink compound thermal conductivity =.42 W/mK A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow or 4 to 6 Nm Approximate weight the spread of the compound. Lubricated threads. 176 g.33 K/W Revision: 14-Sep-17 2 Document Number: 94355 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91

VS-2MT4KPbF Maximum Allowable Case Temperature ( C) 14 13 12 11 1 9 8 7 6 12 (Rect) 8 1 12 14 16 18 2 22 Instantaneous On-State Current (A) 16 14 12 1 8 6 4 1 Per junction At any rated load condition and with rated V RRM applied following surge. Initial T J = 15 C at 6 Hz.83 s at 5 Hz.1 s 1 1 Total Output Current (A) Instantaneous On-State Voltage (V) Fig. 1 - Current Rating Characteristics Fig. 3 - Maximum Non-Repetitve Surge Current Peak Half Sine Wave On-State Current 1 1 1 1.5 T J = 25 C T J = 15 C 1. 1.5 2. 2.5 3. Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 2 - On-State Voltage Drop Characteristics Peak Half Sine Wave On-State Current (A) 2 18 16 14 12 1 8 6 4 2.1 Per junction Maximum non-repetitive surge current versus pulse train duration. Control of conduction may not be maintained. Initial T J = 15 C No voltage reapplied Rated V RRM reapplied.1 1. 1 Pulse Train Duration (s) Fig. 4 - Maximum Non-Repetitive Surge Current 5 5 Maximum Total Power Loss (W) 4 3 2 1 12 (Rect) T J = 125 C 4 8 12 16 2 Total Output Current (A) Maximum Total Power Loss (W) 4 3 2 1 Fig. 5 - Current Rating Nomogram (1 Module Per Heatsink).5 K/W.1 K/W.2 K/W.3 K/W.5 K/W 1. K/W R thsa =.25 K/W - ΔR 3 6 9 12 15 Maximum Allowable Ambient Temperature ( C) Revision: 14-Sep-17 3 Document Number: 94355 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91

VS-2MT4KPbF Z thjc - Transient Thermal Impedance (K/W) 1 Steady state value R thjc per junction =.69 K/W (DC operation) 1.1.1.1.1.1.1 1 Square Wave Pulse Duration (s) Fig. 6 - Thermal Impedance Z thjc Characteristics 1 ORDERING INFORMATION TABLE Device code VS- 2 MT 4 K PbF 1 2 3 4 5 6 1 - product 2 - Current rating code: 2 = 2 A (average) 3 - Three phase diodes bridge 4 - Essential part number 5 - Voltage code x 1 = V RRM (4 = 4 V) 6 - PbF = Lead (Pb)-free Note To order the optional hardware go to www.vishay.com/doc?95172 CIRCUIT CONFIGURATION + D A B C ~ - E F Dimensions LINKS TO RELATED DOCUMENTS www.vishay.com/doc?954 Revision: 14-Sep-17 4 Document Number: 94355 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91

MTK (with and without optional barrier) Outline Dimensions DIMENSIONS WITH OPTIONAL BARRIERS in millimeters (inches) Screws M5 x.8 length 1 Fast-on tab 2.8 x.8 (type 11) 24 ±.5 (.94 ±.2) 28 ± 1 (1.11 ±.4) 25.5 ±.5 (1.4 ±.2) 38 ±.5 (1.5 ±.2) 3 ±.5 (1.17 ±.2) 8.5 ±.5 (.34 ±.2) 35 ±.3 (1.38 ±.1) 5 ±.3 (.2 ±.1) 75 ±.5 (2.95 ±.2) A B C 1 2 5 6 14 ±.3 (.55 ±.1) 18 ±.3 (.71 ±.1) Ø 6.5 ±.2 (Ø.26 ±.1) 3 4 D E 46 ±.3 (1.81 ±.1) F 7 8 8 ±.3 (3.15 ±.1) 94 ±.3 (3.7 ±.1) Document Number: 954 For technical questions, contact: indmodules@vishay.com www.vishay.com Revision: 27-Aug-7 1

Outline Dimensions MTK (with and without optional barrier) DIMENSIONS WITHOUT OPTIONAL BARRIERS in millimeters (inches) Screws M5 x.8 length 1 Fast-on tab 2.8 x.8 (type 11) 24 ±.5 (.94 ±.2) 28 ± 1 (1.11 ±.4) 25.5 ±.5 (1.4 ±.2) 3 ±.5 (1.17 ±.2) 8.5 ±.5 (.34 ±.2) 35 ±.3 (1.38 ±.1) 5 ±.3 (.2 ±.1) 75 ±.5 (2.95 ±.2) A B C 1 2 5 6 14 ±.3 (.55 ±.1) 18 ±.3 (.71 ±.1) Ø 6.5 ±.2 (Ø.26 ±.1) 3 4 D E 46 ±.3 (1.81 ±.1) F 7 8 8 ±.3 (3.15 ±.1) 94 ±.3 (3.7 ±.1) www.vishay.com For technical questions, contact: indmodules@vishay.com Document Number: 954 2 Revision: 27-Aug-7

Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. 217 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 8-Feb-17 1 Document Number: 91