Nch 3V 7A Power MOSFET Datasheet Outline V DSS 3V HUML22L8 R DS(on) at V (Max.) R DS(on) at 4.5V (Max.) I D 2.4mW 3.mW 7A P D 2.W () (2) (3) (6) (5) (4) (8) (3) (2) () (4) (5) (6) (7) Features ) Low on - resistance. 2) High Power Small Mold Package (HUML22L8). 3) Pb-free lead plating ; RoHS compliant 4) Halogen Free 5) % Rg and UIS Tested Inner circuit () Drain (2) Drain (3) Gate (4) Source * BODY DIODE (5) Drain (6) Drain (7) Drain (8) Source Packaging specifications Packaging Taping Application Reel size (mm) 8 DC/DC converters Tape width (mm) Type Load Switch Basic ordering unit (pcs) 3, Taping code TR Marking HE Absolute maximum ratings(t a = 25 C),unless otherwise specified Parameter Symbol Value Unit Drain - Source voltage V DSS 3 V Continuous drain current I D * drain current I D,pulse *2 7 28 A A Gate - Source voltage V GSS 2 V Power dissipation P D *3 2. W Junction temperature T j 5 C Range of storage temperature T stg -55 to +5 C 23 ROHM Co., Ltd. All rights reserved. / 23.4 - Rev.A
Thermal resistance Parameter Symbol Values Min. Typ. Max. Unit Thermal resistance, junction - ambient R thja *3 - - 62.5 C/W R thjc - - - C/W Electrical characteristics(t a = 25 C),unless otherwise specified Parameter Symbol Conditions Values Min. Typ. Max. Unit Drain - Source breakdown voltage V (BR)DSS V GS = V, I D = ma 3 - - V Breakdown voltage temperature coefficient ΔV (BR)DSS ΔT j I D =ma referenced to 25 C - 26.5 - mv/ C Zero gate voltage drain current I DSS V DS = 3V, V GS = V - - ma Gate - Source leakage current I GSS V GS = 2V, V DS = V - - na Gate threshold voltage V GS (th) V GS = V DS, I D = 25mA. - 2.5 V Gate threshold voltage temperature coefficient ΔV (GS)th ΔT j I D =ma referenced to 25 C - -3 - mv/ C Static drain - source on - state resistance R DS(on) V GS =V, I D =7A - 6.4 2.4 V GS =4.5V, I D =7A - 23. 3. mw Gate input resistannce R G f = MHz, open drain - 4.4 - W Transconductance Y fs V DS =5V, I D =7A 4 - - S * Limited only by maximum temperature allowed. *2 Pw ms, Duty cycle % *3 Mounted on a FR4 (4 4.8mm) 23 ROHM Co., Ltd. All rights reserved. 2/ 23.4 - Rev.A
Electrical characteristics(t a = 25 C) Parameter Symbol Conditions Values Min. Typ. Max. Unit Input capacitance C iss V GS = V - 22 - Output capacitance C oss V DS = 5V - 75 - pf Reverse transfer capacitance C rss f = MHz - 23 - Turn - on delay time t d(on) V DD 5V, V GS = V - 5.8 - Rise time t r Turn - off delay time t d(off) I D = 3.5A - 4. - R L = 4.3W - 6.5 - ns Fall time t f R G = W - 2.8 - Gate Charge characteristics(t a = 25 C) Parameter Symbol Conditions Values Min. Typ. Max. Unit Total gate charge Q g V DD 5V, I D =7A V GS = V - 4.8 - Gate - Source charge Q gs V DD 5V, I D =7A V GS = 4.5V - 2.2 - -.3 - nc Gate - Drain charge Q gd -.4 - Body diode electrical characteristics (Source-Drain)(T a = 25 C) Parameter Symbol Conditions Values Min. Typ. Max. Unit Inverse diode continuous, forward current I * S T a = 25 C - -.67 A Forward voltage V SD V GS = V, I s =.67A - -.2 V 23 ROHM Co., Ltd. All rights reserved. 3/ 23.4 - Rev.A
Electrical characteristic curves Fig. Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area 2 Power Dissipation : P D /P D max. [%] 8 6 4 2 5 5 2 Operation in this area is limited by R DS (on) (V GS = V) DC Operation P W = ms P W = ms P W = ms T. a =25ºC Single Pulse Mounted on a cupper board. (4mm 4mm.8mm).. Junction Temperature : T j [ C] Drain - Source Voltage : V DS [V] Normalized Transient Thermal Resistance : r (t) Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width top D = D =.5. D =. D =.5 D =. bottom Single. Rth(ch-a)=4.7ºC/W Rth(ch-a)(t)=r(t) Rth(ch-a) Mounted on a cupper board. (4mm 4mm.8mm)... Pulse Width : P W [s] Peak Transient Power : P(W) Fig.4 Single Pulse Maximum Power dissipation Single Pulse.. Pulse Width : P W [s] 23 ROHM Co., Ltd. All rights reserved. 4/ 23.4 - Rev.A
Electrical characteristic curves Fig.5 Typical Output Characteristics(I) Fig.6 Typical Output Characteristics(II) 7 6 5 4 3 2 V GS = V V GS = 4.5V V GS = 4.V V GS = 3.V V GS = 2.8V 7 6 5 4 3 2 V GS = V V GS = 4.5V V GS = 4.V V GS = 3.V V GS = 2.8V V GS = 2.5V.2.4.6.8 V GS = 2.5V 2 4 6 8 Drain - Source Voltage : V DS [V] Drain - Source Voltage : V DS [V] Drain - Source Breakdown Voltage : V (BR)DSS [V] Fig.7 Breakdown Voltage vs. Junction Temperature 6 4 2 V GS = V I D = ma -5 5 5 Junction Temperature : T j [ C] Fig.8 Typical Transfer Characteristics... V DS = V T a = 25ºC T a = 75ºC T a = 25ºC T a = -25ºC 2 3 Gate - Source Voltage : V GS [V] 23 ROHM Co., Ltd. All rights reserved. 5/ 23.4 - Rev.A
Electrical characteristic curves Fig.9 Gate Threshold Voltage vs. Junction Temperature Fig. Transconductance vs. Drain Current Gate Threshold Voltage : V GS(th) [V] 3 2 V DS = V I D = ma Transconductance : g fs [S] V DS = 5V T a =75ºC T a = -25ºC -5 5 5... Junction Temperature : T j [ C] Drain Current Dissipation : I D /I D max. (%) Fig. Drain Current Derating Curve.2.8.6.4.2-25 25 5 75 25 5 Junction Temperature : T j [ºC] Static Drain - Source On-State Resistance : R DS(on) [mw] Fig.2 Static Drain - Source On - State Resistance vs. Gate Source Voltage 5 45 4 35 3 25 2 5 5 I D = 3.5A I D = 7A 2 4 6 8 Gate - Source Voltage : V GS [V] 23 ROHM Co., Ltd. All rights reserved. 6/ 23.4 - Rev.A
Electrical characteristic curves Fig.3 Static Drain - Source On - State Resistance vs. Drain Current(I) Fig.4 Static Drain - Source On - State Resistance vs. Junction Temperature Static Drain - Source On-State Resistance : R DS(on) [mw] V GS = V T a =75ºC T a = -25ºC. Static Drain - Source On-State Resistance : R DS(on) [mw] 3 25 2 5 5 V GS = V I D = 7A -5-25 25 5 75 25 5 Junction Temperature : T j [ºC] Fig.5 Static Drain - Source On - State Resistance vs. Drain Current(II) Static Drain - Source On-State Resistance : R DS(on) [mw] V GS = 4.5V T a =75ºC T a = -25ºC. 23 ROHM Co., Ltd. All rights reserved. 7/ 23.4 - Rev.A
Electrical characteristic curves Capacitance : C [pf] Fig.6 Typical Capacitance vs. Drain - Source Voltage T a = 25ºC f = MHz V GS = V C iss C oss C rss.. Drain - Source Voltage : V DS [V] Switching Time : t [ns] Fig.7 Switching Characteristics t d(on) t r t f t d(off).. V DD = 5V V GS = V R G =W Fig.8 Dynamic Input Characteristics Fig.9 Source Current vs. Source Drain Voltage Gate - Source Voltage : V GS [V] 8 6 4 V DD = 5V 2 I D = 7A R G =W 2 4 Source Current : I S [A].. V GS =V T a =75ºC T a = -25ºC.5 Total Gate Charge : Q g [nc] Source-Drain Voltage : V SD [V] 23 ROHM Co., Ltd. All rights reserved. 8/ 23.4 - Rev.A
Measurement circuits Fig.- Switching Time Measurement Circuit Fig.-2 Switching Waveforms Fig.2- Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform 23 ROHM Co., Ltd. All rights reserved. 9/ 23.4 - Rev.A
Dimensions (Unit : mm) HUML22L8(Single) y S D A S E A B A Seating plane Lp2 l2 b4 e b3 b2 b b6 b7 b8 b l3 Lp b9 X M Lp e S A B l b5 e Dimension in mm / inches Pattern of terminal position areas [Not a recommended pattern of soldering pads] DIM MILIMETERS INCHES MIN MAX MIN MAX A.55.65.22.26 A..5..2 b.25.35..4 b.55.75.6.69 b2.95.5.37.4 b3.75.7 b4.2.3.8.2 D.9 2..75.83 E.9 2..75.83 e.65.26 Lp.225.325.9.3 Lp.5.5.4.45 Lp2.75.85.3.33 x -. -.4 y -. -.4 DIM MILIMETERS INCHES MIN MAX MIN MAX b5 -.45 -.8 b6 -.75 -.69 b7 -.5 -.4 b8.75.7 b9 -.3 -.2 e.725.68 l -.425 -.7 l2 -.5 -.45 l3 -.85 -.33 23 ROHM Co., Ltd. All rights reserved. / 23.4 - Rev.A
Notice Notes ) 2) 3) 4) 5) 6) 7) 8) 9) ) ) 2) 3) The information contained herein is subject to change without notice. Before you use our Products, please contact our sales representative and verify the latest specifications : Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in this document. The Products specified in this document are not designed to be radiation tolerant. For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 4) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http:///contact/ 23 ROHM Co., Ltd. All rights reserved. R2A
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