THE CHALLENGE OF METROLOGY IN THE 450MM WAFER TRANSITION PROCESS

THE CHALLENGE OF METROLOGY IN THE 450MM WAFER TRANSITION PROCESS Conference: 450mm in Europe Quo Vadis? October 7, 2009. Martin Schellenberger, Lothar Pfitzner. Fraunhofer IISB. Page 1

THE CHALLENGE OF METROLOGY IN THE 450MM WAFER TRANSITION PROCESS About Fraunhofer Metrology in Semiconductor Manufacturing 450 mm Metrology Tools Potential Next Steps Summary & Outlook Page 2 Group / Department, Date

The Fraunhofer Gesellschaft Founded in 1949 in Munich, Germany, the Fraunhofer- Gesellschaft with its numerous institutes is the leading establishment of applied research in Germany. The Fraunhofer- Gesellschaft conducts research according to the needs of the market in the domestic and international R&D marketplace. Fraunhofer Profile 60 institutes at 40 locations 17.000 employees 1,5 billion budget Microelectronics Production Information and Communication Technology Materials and Components Life Sciences Surface Technology and Photonics Page 3

Technological Fraunhofer IISB: Profile Departments of IIS B and Fields of Activity S em iconductor Technology» From Crystals to Devices «Pow er Electronics and Mechatronics» From Devices to Systems «Page 4

THE CHALLENGE OF METROLOGY IN THE 450MM WAFER TRANSITION PROCESS About Fraunhofer Metrology in S em iconductor Manufacturing Metrology in Production Production Ramp curve 450 mm Metrology Tools Potential Next Steps Summary & Outlook Page 5 Group / Department, Date

Scatt Yield (a.u.) Introduction Metrology in Nanotechnologies Understanding and controlling dimensions, materials properties, and defects towards atomic level is required (e.g. 1.5 nm HfSiOx layer) Improving capabilities of metrology and analysis equipment (e.g. 3D at atomic scale) poses huge challenges S em iconductor Manufacturing A series of processes with up to 1000 processing steps A series of interposed metrology and inspection steps 800 600 400 200 HfSiOx SiO 2 X10 5 nm HfSiOx: 1.4 ± 0.5 nm 2.1 ± 0.5 nm SiO 2 : 1.1 ± 0.5 nm 1.1 ± 0.5 nm Analysis at atomic scale performed with XTEM @ CNR & MEIS @ Daresburg Laboratory (USAL) (ANNA project FP6 EC contract 026134-RII3) O Si Hf Metrology for semiconductor manufacturing is the basis of preparatory know-how, of off-line, in-line and in situ-characterization, and advanced process control. 400 0-400 8000 6000 4000 2000 0 70 80 90 1.5 nm 1nm run61500.2d.data.tile.energy@x=86-90.ascii HfSiOx SiO 2 Si wafer 70 80 90 Energy (kev) 100 100 Page 6

FEOL BEOL process flow Introduction package contact passivation metal IMD W Plug PDM contact S and D implant spacer LDD gate 5 Defect and Failure Scenario of an IC p + Via Metal 1 particle ov erlay n n-well short ESD Damage particle open Interconnects layer thickness n + p Metal 2 crack COP p-well contamination interfaces: roughness, state density, charges p well and Vt STI alignment Si crystal: stacking faults, contamination, stress, COP Page 7

Source: Giichi Inoue,Toshiba Semiconductor Process Level/Yield Metrology in Semiconductor Manufacturing Metrology for S em iconductor Manufacturing Ideal Actual Process and and Yield Learning Curve Process Integration Pilot Mass Production Transfer Technology Transfer Metrology required as the basis of preparatory know-how, of off-line, in-line and in situ-characterization, and advanced process control. Process Creation Process Selection Process Tuning Process Stabilization Product Production Page 8

THE CHALLENGE OF METROLOGY IN THE 450MM WAFER TRANSITION PROCESS About Fraunhofer Introduction Metrology in Semiconductor Manufacturing 450 mm Metrology Tools Impact of 450 mm Wafer Diameter on Equipment and Metrology Potential Development Topics for 450mm Metrology Tools Priorities in 450 mm? Potential Next Steps Summary & Outlook Page 9 Group / Department, Date

450 mm Metrology Tools Impact of 450 mm Wafer Diameter on Equipm ent and Metrology Impacted Areas Processes Focus Items Diameter 300 mm 450 mm Thickness 775 µm 925 µm Area 706 cm² 1589 cm² Process uniformity, contamination, thermal effects/ uniformity, (cleaning, polishing, deposition, etch, anneal,..) Lithography Increase of area by 2.25 times requires high performance high speed litho Handling Metrology Data Management Deformation ( stress), transport issues, wafer translation (large distances, acceleration and settling times increase, vertical drift along the wafer) Stages and handling, mapping capabilities, increase of area by 2.25 times requires high performance high speed metrology (inspection), dimensional change due to thermal expansion coefficient, Amount of data, data quality, Page 10

450 mm Metrology Tools Potential Dev elopm ent Topics for 450m m Metrology Tools (1/2): S tand-alone m etrology Improved scatterometry (3D) Particle measurement, contamination monitoring Stress measurement at the nanoscale Metrology tools for characterization of dielectrics, ultra-thin layers and interfaces (composition, morphology, geometric dimensions) Reference materials Integrated metrology and sensors Sensors for improved equipment characterization and qualification Sensors for characterization of plasma, litho, and CMP processes Metrology/sensors as enabler for APC Page 11 Collected early 2009 from EU metrology companies

450 mm Metrology Tools Potential Dev elopm ent Topics for 450m m Metrology Tools (2/2): Data processing and algorithms Algorithms for the measurements of complex stacks and features Models for the analysis of ultra-thin layers including interface and quantum effects Data reduction algorithms for correlated sampling approach and calculation of quality data Model for quantification of precision trade-off of IM to stand-alone metrology vs. improved sampling rate and time based information Autom ation Modular approach for automation and software Benefit expected for 300 mm and 200 mm equipment Page 12 Collected early 2009 from EU metrology companies

450 mm Metrology Tools 450 mm Metrology Tools Priorities in 450 mm? To be defined by end-users (target specs, required improvements/ modifications) May not differ too much from current ones, e.g. NANOCMOS - CD - overlay - layer thickness - inspection (macro, defect) - filling quality - grain size - crystallographic texture patterned layers metal layers Page 13 - thickness - uniformity - nitrogen content and profile gate oxide Key applications for Integrated Metrology low-k materials NANOCMOS funded under EU 6th FP, #507587 - thickness - refractive index - porosity - composition - uniformity

THE CHALLENGE OF METROLOGY IN THE 450MM WAFER TRANSITION PROCESS About Fraunhofer Introduction Metrology in Semiconductor Manufacturing 450 mm Metrology Tools Potential Next Steps Network in Metrology 450 mm Metrology Platform Support and R&D Activities Summary & Outlook Page 14 Group / Department, Date

Potential Next Steps Netw ork in Metrology www.semiconductors.co.uk BELFAST DUBLIN SALFORD LEUVEN MAINZ ERLANGE KARLSRUH N E LANDSHU PARIS ST. FLORIAN MÜNCHEN T WIEN WIENER ZÜRIC NEUSTADT BUDAPEST H UNTERPREMSTÄTTE CROLLES VILLACH N BERNIN TRENTO AGRATE NOVARA GRENOBLE BOLOGNA MILANO TOULOUSE ROUSSET HAMBURG KREFEL D AACHEN RENDSBURG LÜBECK AMSTERDAM NIJMEGEN BERLIN WITNEY OXFORDSHIREEINDHOVEN DORTMUND JENA DRESDEN VTT AVEZZAN O ROMA Metrology is a European strength! PATRAS ATHENS Page 15 AVEZZAN O = supplier = user = R & D TEL AVIV JERUSALEM MIGDAL HAEMEK

Potential Next Steps Contributions by IISB 450mm Platforms for Metrology Development Fraunhofer ready to provide Stand-alone metrology: Realization of a 450 mm metrology platform, which enables the development of individual core metrology systems for 450 mm metrology requirements without the need to supply overhead wafer handling equipment, open automation, and fab data management. Integrated metrology and sensors: Realization of test beds to realize common standardized integration and automation strategies for the development of IM and sensors without the need to supply overhead automation, and fab data management. R&D Activities for 450 mm Metrology Fraunhofer ready to start IISB metrology and expertise applicable to 450 mm: wave front sensors, scatterometry, ellipsometry, digital imaging and processing, defect inspection, x-ray techniques Equipment qualification/development: organic/inorganic contamination, thermo desorption, TXRF, vapor phase composition Sensor development for stand-alone and integrated metrology, virtual metrology Page 16

Contributions Potential Next by Steps IIS B Support Activities for 450 mm Metrology Equipment Development Production of test wafers and reference samples, e.g. with controlled deposition of contaminants and defects Cleaning and polishing (double and single side) Definition of standardized wafer for 450 mm wafer exchange amongst R&D sites using accepted specifications Set-up of distributed processing network including logistics for 450 mm Development of standards Collaboration Fraunhofer ready to coordinate Intel/Samsung/TSMC, SEMATECH/ISMI, Albany, Taiwan,... Link to expertise in FP7/ENIAC/... projects (benefit for 300 mm Prime, 450 mm), e.g. IMPROVE,... Flying Wafer for 450mm, also on a world-wide scale Europe acting as focal point for global developments in (450mm) metrology Page 17

THE CHALLENGE OF METROLOGY IN THE 450MM WAFER TRANSITION PROCESS About Fraunhofer Introduction Metrology in Semiconductor Manufacturing 450 mm Metrology Tools Potential Next Steps Summary & Outlook Page 18 Group / Department, Date

Summary & Outlook Metrology is the onset of the food chain Currently, appropriate modification of existing metrology tools is sufficient for starting 450 mm development Support of equipment suppliers in the transition to 450 mm and towards novel metrology challenges IISB ready to provide 450 mm atmospheric stage and 450 mm vacuum stage with (standardized?) sensor and metrology components accommodation Integration of metrology will be continued by IISB Global collaboration is mandatory in research and with industry Page 19