hyristor \ Diode Module = 2x8 M I = 32 A A =.8 Phase leg Part number MCD3-8io Backside: isolated 3 2 5 4 Features / Advantages: Applications: Package: Y2 hyristor for line frequency Planar passivated chip Long-term stability Direct Copper Bonded Al2O3-ceramic Line rectifying 5/6 Hz Softstart AC motor control Motor control Power converter AC power control Lighting and temperature control Isolation oltage: 36 ~ Industry standard outline ohs compliant Soldering pins for PCB mounting Base plate: B ceramic educed weight Advanced power cycling erms Conditions of usage: he data contained in this product data sheet is exclusively intended for technically trained staff. he user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. he specifications of our components may not be considered as an assurance of component characteristics. he information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact your local sales office. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office. Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. 27 IXYS all rights reserved Data according to IEC 6747and per semiconductor unless otherwise specified 276c
ectifier Symbol I I Definition Conditions = 8 = 8 = 25 C J = 4 C atings typ. max. 9 forward voltage drop I = 3 A = 25 C.4 I SM/DSM M/DM /D A (MS) I = I = I = 6 A 3 A 6 A C= 85 C = 25 C J = 25 C J threshold voltage J = 4 C.8 for power loss calculation only r slope resistance.82 mω thermal resistance junction to case. K/W thjc P tot total power dissipation = 25 C 3 W P GM P GA J J = 25 C I SM max. forward surge current t = ms; (5 Hz), sine J = 45 C t = 8,3 ms; (6 Hz), sine = C J junction capacitance = 4 f = MHz = 25 C 438 max. gate power dissipation t P= 3 µs C = 4 C 2 average gate power dissipation t = ms; (5 Hz), sine t = 8,3 ms; (6 Hz), sine J C min. 8 4.32.8.3 32 5 t = 5 µs 6 P J = 4 C I²t value for fusing t = ms; (5 Hz), sine = 45 C (di/dt) cr average forward current MS forward current critical rate of rise of current 8 sine t = 8,3 ms; (6 Hz), sine t = ms; (5 Hz), sine t = 8,3 ms; (6 Hz), sine J = 4 C = = = 4 C J J = 9.2 9.94 7.82 8.45 423.2 4.6 35.8 296.7 2 Unit ma ma A A J pf J = 4 C; f = 5 Hz t P= 2 µs; di G /dt = A/µs; repetitive, I = 96 A IG = A; = ⅔ DM non-repet., I = 32 A (dv/dt) critical rate of rise of voltage = ⅔ DM J = 4 C cr max. non-repetitive reverse/forward blocking voltage max. repetitive reverse/forward blocking voltage reverse current, drain current /D /D thch thermal resistance case to heatsink.4 GK = ; method (linear voltage rise) G gate trigger voltage = 6 = 25 C D J J = -4 C 5 W W W A/µs A/µs /µs 2 I G gate trigger current D = 6 J = 25 C 5 ma J = -4 C 3 2 ma GD gate non-trigger voltage = ⅔ J = C.25 D DM 4 I GD gate non-trigger current ma I L latching current t p = 3 µs J = 25 C 2 ma IG =.45A; di G /dt =.45 A/µs I H holding current D = 6 GK = J = 25 C 5 ma t gd gate controlled delay time = ½ J = 25 C 2 µs D DM IG = A; di G /dt = A/µs t q turn-off time = ; I = 32 A; = ⅔ DM J = 25 C 2 µs di/dt = A/µs dv/dt = 5 /µs t p = 2 µs K/W 27 IXYS all rights reserved Data according to IEC 6747and per semiconductor unless otherwise specified 276c
Package atings Symbol Definition Conditions min. typ. max. Unit I MS MS current per terminal 6 A J virtual junction temperature -4 4 C op operation temperature -4 25 C Weight M D M dspp/app dspb/apb Y2 stg storage temperature -4 25 C ISOL mounting torque 2.5 terminal torque 2 creepage distance on surface striking distance through air isolation voltage t = second t = minute terminal to terminal terminal to backside 5/6 Hz, MS; I ISOL ma 3. 3. 36 3 255 5 5 g Nm Nm mm mm yywwaa Part Number Lot.No: xxxxxx Circuit Date Code () + Production Index (PI) Data Matrix: part no. (-9), + PI (2-25), lot.no.# (26-3), blank (32), serial no.# (33-36) Ordering Standard Ordering Number Marking on Product Delivery Mode Quantity Code No. MCD3-8io MCD3-8io Box 2 46398 Equivalent Circuits for Simulation * on die level = 4 C I hyristor J max threshold voltage.8 max slope resistance *.32 mω 27 IXYS all rights reserved Data according to IEC 6747and per semiconductor unless otherwise specified 276c
Outlines Y2 3x M8 42.5 35 28.5 2 2.8/.8.25 3 ± 4.5 3 32 65 x 57 6 max. 2.4 8 6 5.5 4 5 6 7 5 38 6 2 3 3 2 5 4 27 IXYS all rights reserved Data according to IEC 6747and per semiconductor unless otherwise specified 276c
hyristor 2 5 Hz, 8% M 6 = 6 5 8 sin 2 6 3 I SM I FSM 8 6 J = 45 C I 2 t J = 45 C 4 I AM 3 [A] 4 J = 4 C [A 2 s] [A] 2 2 J = 4 C -3-2 - t [s] Fig. Surge overload current I (F)SM : crest value, t: duration 5 2 3 6 8 t [ms] Fig. 2 I 2 t versus time (- ms) 5 5 C [ C] 2 Fig. 3 Max. forward current at case temperature 8 thja.2 I G : J = -4 C I G : J = C.3 I G : J = 25 C 2 3 6.4.5 P [W] 4 2 8 sin 2 6 3.6.8.4 G []. I GD : J = 25 C J = 25 C : P GA = 2W 2: P GA = 6W 3: P GA = 2W 3 25 2 3 4 5 I AM, I FAM [A] Fig. 4 Power dissipation versus onstate current and ambient temperature (per thyristor/diode) 5 5 A [ C] thka.3.4.... 5 I G [A] Fig. 5 Gate trigger characteristics J = 25 C P [W] 2 5 5 Circuit B6 3x MCC3 or 3x MCD3.6.8..5.2.3 t gd [µs] typ. Limit 2 4 6 8 I dam [A] 5 5 A [ C] Fig. 6 hree phase rectifier bridge: Power dissipation versus direct output current and ambient temperature.. I G [A] Fig. 7 Gate trigger delay time 27 IXYS all rights reserved Data according to IEC 6747and per semiconductor unless otherwise specified 276c
ectifier 3 25 thja.3.4.6 2.8 P tot 5..5 [W] 5 Circuit W3 3x MCC3.2.3 2 4 6 I MS [A] Fig. 7 5 5 A [ C] hree phase AC-controller: Power dissipation versus MS output current and ambient temperature Z thjc.5..5. -3-2 - 2 Fig. 8 t [s] ransient thermal impedance junction to case (per thyristor) 3 thjc for various conduction angles d: d thjc (K/W).2 8 C.3 2 C.4 6 C.5 3 C.5 Constants for Z thjc calculation: i thi t i [s].3.99 2.43.68 3.947.456.2 thjk for various conduction angles d:.5 Z thjk..5-3 Fig. 9 3-2 - 2 t [s] ransient thermal impedance junction to heatsink (per thyristor) d thjk.52 8 C.54 2 C.54 6 C.55 3 C.55 Constants for Z thjk calculation: i thi (K/W) t i (s).3.99 2.43.68 3.947.456 4.4.36 27 IXYS all rights reserved Data according to IEC 6747and per semiconductor unless otherwise specified 276c
Mouser Electronics Authorized Distributor Click to iew Pricing, Inventory, Delivery & Lifecycle Information: IXYS: MCD3-8io