Nch 3V.5A Power MOSFET Datasheet V DSS R DS(on) (Max.) 3V 24mW I D.5A Outline TUMT3 () (3) P D.8W (2) Features Inner circuit ) Low on - resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TUMT3). () Gate (2) Source (3) Drain 4) Pb-free lead plating ; RoHS compliant * ESD PROTECTION DIODE *2 BODY DIODE Packaging specifications Packaging Taping Application Reel size (mm) 8 DC/DC converters Tape width (mm) 8 Type Basic ordering unit (pcs) 3, Taping code Marking TL PP Absolute maximum ratings(t a = 25 C) Parameter Symbol Value Unit Drain - Source voltage V DSS 3 V Continuous drain current I D * Pulsed drain current I D,pulse *2.5 A 6. A Gate - Source voltage V GSS 2 V Power dissipation P D *3 P D *4.8 W.32 W Junction temperature T j 5 C Range of storage temperature T stg -55 to +5 C / 23.2 - Rev.B
Thermal resistance Parameter Symbol Values Min. Typ. Max. Unit Thermal resistance, junction - ambient R thja *3 R thja *4 - - 56 C/W - - 39 C/W Electrical characteristics(t a = 25 C) Parameter Symbol Conditions Values Min. Typ. Max. Unit Drain - Source breakdown voltage V (BR)DSS V GS = V, I D = ma 3 - - V Breakdown voltage temperature coefficient ΔV (BR)DSS ΔT j I D =ma referenced to 25 C - 3 - mv/ C Zero gate voltage drain current I DSS V DS = 3V, V GS = V - - ma Gate - Source leakage current I GSS V GS = 2V, V DS = V - - ma Gate threshold voltage V GS (th) V DS = V, I D = ma.5 -.5 V Gate threshold voltage temperature coefficient ΔV (GS)th ΔT j I D =ma referenced to 25 C - -2.3 - mv/ C V GS =4.5V, I D =.5A - 7 24 Static drain - source on - state resistance R DS(on) V GS =4V, I D =.5A - 8 25 V GS =2.5V, I D =.5A - 24 34 mw V GS =4.5V, I D =.5A, T j =25 C - 27 38 Gate input resistannce R G f = MHz, open drain - 7 - W Transconductance g fs V DS =V, I D =.5A.5 2.6 - S * Limited only by maximum temperature allowed. *2 Pw ms, Duty cycle % *3 Mounted on a seramic board (3 3.8mm) *4 Mounted on a FR4 (5 2.8mm) Pulsed 2/ 23.2 - Rev.B
Electrical characteristics(t a = 25 C) Parameter Symbol Conditions Values Min. Typ. Max. Unit Input capacitance C iss V GS = V - 8 - Output capacitance C oss V DS = V - 4 - pf Reverse transfer capacitance C rss f = MHz - 2 - Turn - on delay time t d(on) Rise time t r Turn - off delay time t d(off) V DD 5V, V GS = 4.5V - 7 - I D =.75A - 9 - R L = 2W - 5 - ns Fall time t f R G = W - 6 - Gate Charge characteristics(t a = 25 C) Parameter Symbol Conditions Values Min. Typ. Max. Unit Total gate charge Q g Gate - Source charge Q gs Gate - Drain charge Q gd V DD 5V, I D =.5A V GS = 4.5V -.6 - -.5 - -.3 - nc Body diode electrical characteristics (Source-Drain)(T a = 25 C) Parameter Symbol Conditions Values Min. Typ. Max. Unit Inverse diode continuous, forward current I S * T a = 25 C - -.6 A Forward voltage V SD V GS = V, I s =.6A - -.2 V 3/ 23.2 - Rev.B
Electrical characteristic curves Fig. Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area Power Dissipation : P D /P D max. [%] 2 8 6 4 2 5 5 2. Operation in this area is limited by R DS (on) ( V GS = V ) P W = ms DC Operation Single Pulse Mounted on a ceramic board. (3mm 3mm.8mm) P W = ms P W = ms.. Junction Temperature : Tj [ C] Drain - Source Voltage : V DS [V] Normalized Transient Thermal Resistance : r (t).. Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width Single Pulse top D= D=.5 D=. D=.5 D=. bottom Signle Rth(ch-a)=56ºC/W Rth(ch-a)(t)=r(t) Rth(ch-a) Mounted on ceramic board (3mm 3mm.8mm)... Peak Transient Power : P(W) Fig.4 Single Pulse Maxmum Power dissipation Single Pulse.. Pulse Width : P W [s] Pulse Width : P W [s] 4/ 23.2 - Rev.B
Electrical characteristic curves Fig.5 Typical Output Characteristics(I) Fig.6 Typical Output Characteristics(II).4.2.8.6.4.2 V GS =4.5V V GS =2.5V V GS =2.V V GS =.5V Pulsed.4.2.8.6.4.2 V GS =4.5V V GS =2.5V V GS =2.V V GS =.5V Pulsed.2.4.6.8 2 4 6 8 Drain - Source Voltage : V DS [V] Drain - Source Voltage : V DS [V] Fig.7 Breakdown Voltage vs. Junction Temperature Fig.8 Typical Transfer Characteristics Drain - Source Breakdown Voltage : V (BR)DSS [V] 6 4 2 V GS = V I D = ma pulsed -5 5 5 Junction Temperature : T j [ C] Gate - Source Voltage : V GS [V] 5/ 23.2 - Rev.B
Electrical characteristic curves Fig.9 Gate Threshold Voltage vs. Junction Temperature Fig. Transconductance vs. Drain Current Gate Threshold Voltage : V GS(th) [V] 3 2 V DS = V I D = ma pulsed -5 5 5 Transconductance : g fs [S] V DS = V Pulsed T a = -25ºC T a =75ºC... Junction Temperature : T j [ C] Fig. Drain CurrentDerating Curve Fig.2 Static Drain - Source On - State Resistance vs. Gate Source Voltage.2 Drain Current Dissipation : I D /I D max. (%).8.6.4.2-25 25 5 75 25 5 Static Drain - Source On-State Resistance : R DS(on) [mw] Junction Temperature : T j [ºC] Gate - Source Voltage : V GS [V] 6/ 23.2 - Rev.B
Electrical characteristic curves Static Drain - Source On-State Resistance : R DS(on) [mw] Fig.3 Static Drain - Source On - State Resistance vs. Drain Current(I) Static Drain - Source On-State Resistance : R DS(on) [mw] Fig.4 Static Drain - Source On - State Resistance vs. Junction Temperature 3 25 2 5 I D =.5A 5 V GS = V pulsed -5-25 25 5 75 25 5 Junction Temperature : T j [ºC] Fig.5 Static Drain - Source On - State Resistance vs. Drain Current(II) Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(III) Static Drain - Source On-State Resistance : R DS(on) [mw] Static Drain - Source On-State Resistance : R DS(on) [mw] 7/ 23.2 - Rev.B
Electrical characteristic curves Static Drain - Source On-State Resistance : R DS(on) [mw] Fig.7 Static Drain - Source On - State Resistance vs. Drain Current(IV) Capacitance : C [pf] Fig.8 Typical Capacitance vs. Drain - Source Voltage f=mhz V GS =V C iss C rss C oss.. Drain - Source Voltage : V DS [V] Fig.9 Switching Characteristics Fig.2 Dynamic Input Characteristics Switching Time : t [ns] Gate - Source Voltage : V GS [V] Total Gate Charge : Q g [nc] 8/ 23.2 - Rev.B
Electrical characteristic curves Fig.2 Source Current vs. Source Drain Voltage Source Current : I S [A] Source-Drain Voltage : V SD [V] 9/ 23.2 - Rev.B
Measurement circuits Fig.- Switching Time Measurement Circuit Fig.-2 Switching Waveforms Fig.2- Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform / 23.2 - Rev.B
Dimensions (Unit : mm) TUMT3 D A E HE L e b x S A c e e Lp y S A A2 A S l b2 Patterm of terminal position areas DIM MILIMETERS INCHES MIN MAX MIN MAX A -.85 -.33 A...4 A2.72.82.28.32 b.25.4..6 c.2.22.5.9 D.9 2..75.83 E.6.8.63.7 e.65.3 HE 2. 2.2.79.87 L.2. Lp -.4 -.6 x -. -.4 y -. -.4 DIM MILIMETERS INCHES MIN MAX MIN MAX e.7.67 b2 -.5 -.2 l -.5 -.2 Dimension in mm/inches / 23.2 - Rev.B
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