KKT51, March 27 version T51- Thyristors type T51 are of modern design with internal spring loaded contacts, high alumina ceramic insulator and pressure welding encapsulation. Designed for use in power electronic circuits and equipment under normal operating conditions. KEY PARAMETERS U DRM, U RRM I TSM du/dt* di/dt up to 16 V A 16 A V/ s A/ s * maximum (non standard) value FEATURES all diffused design high current capabilities high surge current capabilities high rates voltages high du/dt low gate current dynamic gate low thermal impedance tested according to IEC standards compact size and small weight APPLICATION High Power Drives DC Motor Control High Voltage Power Supplies Outline type code: JEDEC TO-29AC (TO-94) See package details for further information Designed for use in high power industrial and commercial power electronic circuits and equipment where high currents are encoutered and high reliability is essential. 1/7
T51- KKT51, March 27 version ORDERING INFORMATION When ordering please refer to device code builder presented below. Please use the complete part number when ordering, quote or in any future correspondence relating to your order. T51-- voltage class (hundreds of volts) This is standard device, with no dynamic parameters specified and standard accessory set. Please refer to Electrical Parameters if specific dynamic demands have to be met. Those information, as well as any other concerning non-standard accessories e.g. stud thread, custom leads lenght or lead terminal connector type should be included in the order. ELECTRICAL PARAMETERS Voltage ratings Voltage class U DRM, U RRM U DSM, U RSM I DRM, I RRM V V ma 14 14 15 16 16 17 1 du/dt group codes du/dt Group code V/ s no specified value 4 2 5 32 6 5 7 2/7
T51- KKT51, March 27 version Electrical properties Parameter Unit Test conditions Value Average on-state current A Case temperature T c C 85 RMS forward current I T(RMS) A 157 Surge forward current I TSM A =125 C, U R=,8U RRM, t p=1ms I 2 t value I 2 t ka 2 s 12,8 On-state voltage max. U TM V =25 C, I TM=5A 1,8 Treshold voltage U T(T) V,82 Slope resistance r T mω 2,3 Latching current I l ma =25 C, U D=12V 6 Holding current I H ma =25 C, U D=12V 14 Circuit commutated turn-off time (typical) t q s =125 C, I TM=5A, di R/dt=5A/ s, du/dt=2v/ s, U D=,67U DRM, U RM=V Turn-n time (typical) t on s I TM=A, U DM=V 7 Rate of rise of on-state currentrepetitive Critical rate of raise of off-state voltage di/dt A/ s =125 C, I TM=3, U D=,67U DRM, f=5hz, I GM=1A, di G/dt=1A/ s 16 du/dt V/ s =125 C, U D=,67U DRM, 2 - Gate current to trigger I GT ma =25 C, U D=12V 15 Gate voltage to trigger U GT V =25 C, U D=12V 3 Termal properties Thermal resistance, junction to case Thermal resistance, case to heatsink Parameter Unit Test conditions Value R thjc C/W DC,25 R thcs C/W,12 Operating junction temperature min...max C -4...+125 Storage temperature T stg C -4...+125 Mechanical properties Parameter Unit Value Mounting torque M Nm 14... 17 Weight m g 13 3/7
T51- KKT51, March 27 version Package details For further package information, please contact Sales & Marketing Department. All dimensions in mm, unless stated otherwise. Do not scale. 4/7
T51- KKT51, March 27 version CHARACTERISTICS P T(AV), W P T(AV), W 15 125 75 3 o o 9 6 o o 18 12 o 2 175 15 125 o 6 3 o 9 o 12 o 18 o DC 5 75 5 25 25 2 4 6 8 I Power loss characteristics. Sinus wave form. T(AV) 2 4 6 8 12 14 16 Power loss characteristics. Square wave form. 13 T C, o C 13 T C, o C 12 12 11 11 9 3 o 6 o 9 o 12 o 18 o 9 3 o 6 o 9 o 12 o 18 o 8 8 DC 7 2 4 6 8 Case temperature ratings. Sinus wave form. 7 2 4 6 8 12 14 16 Case temperature ratings. Square wave form. 5/7
T51- KKT51, March 27 version I TSM, [ka] 1,6 U TM, V 4,5 4, =max 1,4 =max U R =,8U RRM 3,5 3, 1,2 2,5 2, 1, 1,5 1,,8 1 1 Non-repetitive surge current rating n,5 On-state characteristic I TM Z th(t), o C/W 1,1,1,1,1,1 1 1 Transient thermal impedance t, s 6/7
T51- KKT51, March 27 version Gate characteristics i G, ma i G 375 3 =-4 o C 4 3 U FGM =2V I FGM =4A 225 15 75 =+25 o C =+125 o C 2 1 A B R P GM =16W 1 2 3 4 U GD =,25V Gate characteristic. Possible trigger area. u G, V 5 1 15 2 Gate characteristic. A - possible trigger area B - permitted gate pulse forcing area R - recommended gate drive load line u G, V HEATSINKS LAMINA S.I. has its own proprietary range of extruded aluminium heatsinks designed to optimise the performance of our semiconductors with natural and forced air flow. High efficiency water cooled copper heatsinks are also available. POWER ASSEMBLY CAPABILITY LAMINA S.I. provides a support for those customers requiring more than a basic semiconductor and offers precisely assembled Power Blocks according to factory or customer standards. 7/7