VS-6EPF.PbF, VS-6PF.PbF Series Fast Soft Recovery Rectifier Diode, 6 TO-247 modified TO-247 FETURES Designed and qualified according to JEDE-JESD47 ompliant to RoHS Directive 22/95/E Base cathode 2 3 athode node VS-6EPF.. PRODUT SUMMRY Base cathode 2 3 node node VS-6PF.. Package TO-247 modified (2 pins), TO-247 I F(V) 6 V R 2 V, 4 V, 6 V V F at I F.3 V I FSM 83 t rr 7 ns T J max. 5 Diode variation Single die Snap factor.5 PPLITIONS Output rectification and freewheeling in inverters, choppers and converters Input rectifications where severe restrictions on conducted EMI should be met DESRIPTION The VS-6EPF..PbF and VS-6PF..PbF fast soft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. MJOR RTINGS ND HRTERISTIS SYMBOL HRTERISTIS VLUES UNITS V RRM 2 to 6 V I F(V) Sinusoidal waveform 6 I FSM 83 t rr, /μs 7 ns V F 3, T J = 25. V T J - 4 to 5 VOLTGE RTINGS PRT NUMBER V RRM, MXIMUM PEK REVERSE VOLTGE V V RSM, MXIMUM NON-REPETITIVE PEK REVERSE VOLTGE V VS-6EPF2PbF, VS-6PF2PbF 2 3 VS-6EPF4PbF, VS-6PF4PbF 4 5 VS-6EPF6PbF, VS-6PF6PbF 6 7 I RRM T 5 m 5 BSOLUTE MXIMUM RTINGS PRMETER SYMBOL TEST ONDITIONS VLUES UNITS Maximum average forward current I F(V) T = 6, 8 conduction half sine wave 6 Maximum peak one cycle ms sine pulse, rated V RRM applied 7 I FSM non-repetitive surge current ms sine pulse, no voltage reapplied 83 Maximum I 2 t for fusing I 2 ms sine pulse, rated V RRM applied 245 t 2 s ms sine pulse, no voltage reapplied 346 Maximum I 2 t for fusing I 2 t t =. ms to ms, no voltage reapplied 34 6 2 s Revision: 8-ug- Document Number: 944 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOUMENT IS SUBJET TO HNGE WITHOUT NOTIE. THE PRODUTS DESRIBED HEREIN ND THIS DOUMENT RE SUBJET TO SPEIFI DISLIMERS, SET FORTH T www.vishay.com/doc?9
VS-6EPF.PbF, VS-6PF.PbF Series ELETRIL SPEIFITIONS PRMETER SYMBOL TEST ONDITIONS VLUES UNITS Maximum forward voltage drop V FM 6, T J = 25.3 V Forward slope resistance r t 5. m T J = 5 Threshold voltage V F(TO).88 V T J = 25. Maximum reverse leakage current I RM V R = Rated V RRM T J = 5 5. m REOVERY HRTERISTIS PRMETER SYMBOL TEST ONDITIONS VLUES UNITS Reverse recovery time t rr IF at 6 pk 8 ns Reverse recovery current I rr 25 /μs 3.4 Reverse recovery charge Q rr 25.5 μ Snap factor S Typical.5 I FM dir dt t rr t a t b t Q rr I RM(RE) THERML - MEHNIL SPEIFITIONS PRMETER SYMBOL TEST ONDITIONS VLUES UNITS Maximum junction and storage temperature range T J, T Stg - 4 to 5 Maximum thermal resistance, junction to case R thj D operation.4 Maximum thermal resistance, junction to ambient Typical thermal resistance, case to heatsink pproximate weight Mounting torque Marking device R thj 4 R ths Mounting surface, smooth and greased.2 /W 6 g.2 oz. minimum 6 (5) kgf cm maximum 2 () (Ibf in) ase style TO-247 modified ase style TO-247 6EPF2, 6EPF4, 6EPF6 6PF2, 6PF4, 6PF6 Revision: 8-ug- 2 Document Number: 944 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOUMENT IS SUBJET TO HNGE WITHOUT NOTIE. THE PRODUTS DESRIBED HEREIN ND THIS DOUMENT RE SUBJET TO SPEIFI DISLIMERS, SET FORTH T www.vishay.com/doc?9
VS-6EPF.PbF, VS-6PF.PbF Series Maximum llowable ase Temperature ( ) 5 4 3 2 9 3 R thj (D) =.4 K/W 6 Ø onduction angle 9 2 8 2 3 4 5 6 7 Maximum verage Forward Power Loss (W) 4 2 8 6 4 2 8 2 9 6 3 RMS limit 2 4 6 D Ø onduction period T J = 5 8 verage Forward urrent () verage Forward urrent () Fig. - urrent Rating haracteristics Fig. 4 - Forward Power Loss haracteristics Maximum llowable ase Temperature ( ) 5 4 3 2 R thj (D) =.4 K/W Ø onduction period 6 9 3 2 8 D 9 2 4 6 8 Peak Half Sine Wave Forward urrent () 8 7 6 5 4 3 t any rated load condition and with rated V RRM applied following surge. Initial T J = 75 at 6 Hz.83 s at 5 Hz. s 2 verage Forward urrent () Fig. 2 - urrent Rating haracteristics Number of Equal mplitude Half ycle urrent Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge urrent Maximum verage Forward Power Loss (W) 9 8 7 6 5 4 3 2 8 2 9 6 3 2 3 4 Ø onduction angle T J = 5 5 RMS limit 6 7 Peak Half Sine Wave Forward urrent () 9 8 7 6 5 4 3 2 Maximum non-repetitive surge current versus pulse train duration. Initial T J = 95 No voltage reapplied Rated V RRM reapplied.. verage Forward urrent () Pulse Train Duration (s) Fig. 3 - Forward Power Loss haracteristics Fig. 6 - Maximum Non-Repetitive Surge urrent Revision: 8-ug- 3 Document Number: 944 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOUMENT IS SUBJET TO HNGE WITHOUT NOTIE. THE PRODUTS DESRIBED HEREIN ND THIS DOUMENT RE SUBJET TO SPEIFI DISLIMERS, SET FORTH T www.vishay.com/doc?9
VS-6EPF.PbF, VS-6PF.PbF Series Instantaneous Forward urrent () T J = 25 T J = 5.5..5 2. 2.5 3. 3.5 4. Instantaneous Forward Voltage (V) Fig. 7 - Forward Voltage Drop haracteristics.2 4 t rr - Maximum Reverse Recovery Time (µs).5. I FM = 6 I FM = 3 I FM = I FM = 5 T J = 25 I FM =.5 4 8 2 6 2 Q rr - Maximum Reverse Recovery harge (µ) 3 2 T J = 25 I FM = 6 I FM = 3 I FM = I FM = 5 I FM = 4 8 2 6 2 di/dt - Rate of Fall of Forward urrent (/µs) di/dt - Rate of Fall of Forward urrent (/µs) Fig. 8 - Recovery Time haracteristics, T J = 25 Fig. - Recovery harge haracteristics, T J = 25 t rr - Maximum Reverse Recovery Time (µs).45.4.35.3.25.2 I FM = 6 I FM = 3 I FM = I FM = 5.5 I T J = 5 FM =. 2 3 4 5 6 7 8 9 Q rr - Maximum Reverse Recovery harge (µ) 5 4 3 2 T J = 5 I FM = 6 I FM = 3 I FM = I FM = 5 I FM = 2 3 4 5 6 7 8 9 di/dt - Rate of Fall of Forward urrent (/µs) di/dt - Rate of Fall of Forward urrent (/µs) Fig. 9 - Recovery Time haracteristics, T J = 5 Fig. - Recovery harge haracteristics, T J = 5 Revision: 8-ug- 4 Document Number: 944 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOUMENT IS SUBJET TO HNGE WITHOUT NOTIE. THE PRODUTS DESRIBED HEREIN ND THIS DOUMENT RE SUBJET TO SPEIFI DISLIMERS, SET FORTH T www.vishay.com/doc?9
VS-6EPF.PbF, VS-6PF.PbF Series I rr - Maximum Reverse Recovery urrent () 25 2 5 5 T J = 25 I FM = 6 I FM = 3 I FM = I FM = 5 I FM = I rr - Maximum Reverse Recovery urrent () 25 2 5 5 T J = 5 I FM = 6 I FM = 3 I FM = I FM = 5 I FM = 4 8 2 6 2 2 3 4 5 6 7 8 9 di/dt - Rate of Fall of Forward urrent (/µs) di/dt - Rate of Fall of Forward urrent (/µs) Fig. 2 - Recovery urrent haracteristics, T J = 25 Fig. 3 - Recovery urrent haracteristics, T J = 5 Z thj - Transient Thermal Impedance (K/W). Single pulse D =.5 D =.33 D =.25 D =.7 D =.8.... Square Wave Pulse Duration (s) Steady state value (D operation) Fig. 4 - Thermal Impedance Z thj haracteristics Revision: 8-ug- 5 Document Number: 944 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOUMENT IS SUBJET TO HNGE WITHOUT NOTIE. THE PRODUTS DESRIBED HEREIN ND THIS DOUMENT RE SUBJET TO SPEIFI DISLIMERS, SET FORTH T www.vishay.com/doc?9
VS-6EPF.PbF, VS-6PF.PbF Series ORDERING INFORMTION TBLE Device code VS- 6 E P F 6 PbF 2 3 4 5 6 7 - product 2 - urrent rating (6 = 6 ) 3 - ircuit configuration: E = Single diode, 2 pins = Single diode, 3 pins 4 - Package: P = TO-247/ modified 5 - Type of silicon: F = Fast recovery 6 - Voltage code x = V RRM 7 - PbF = Lead (Pb)-free 2 = 2 V 4 = 4 V 6 = 6 V Dimensions Part marking information SPIE model LINKS TO RELTED DOUMENTS TO-247 modified TO-247 TO-247 modified TO-247 www.vishay.com/doc?95253 www.vishay.com/doc?95223 www.vishay.com/doc?95255 www.vishay.com/doc?95226 www.vishay.com/doc?95275 Revision: 8-ug- 6 Document Number: 944 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOUMENT IS SUBJET TO HNGE WITHOUT NOTIE. THE PRODUTS DESRIBED HEREIN ND THIS DOUMENT RE SUBJET TO SPEIFI DISLIMERS, SET FORTH T www.vishay.com/doc?9
Outline Dimensions DIMENSIONS in millimeters and inches B (2) R/2 Q (3) E N S 2 Ø K M D B M (6) Ø P (Datum B) D2 FP 2 x R (2) D D (4) 2 3 D Thermal pad 4 (5) L L See view B (4) E. M D B M 2 x b2 3 x b. M M b4 2 x e View - Planting (c) (b, b3, b5) Base metal c DDE E Lead assignments Diodes. - node/open 2. - athode 3. - node (b, b2, b4) (4) Section -, D - D, E - E View B SYMBOL MILLIMETERS INHES MILLIMETERS INHES NOTES SYMBOL MIN. MX. MIN. MX. MIN. MX. MIN. MX. NOTES 4.65 5.3.83.29 D2.5.3.2.5 2.2 2.59.87.2 E 5.29 5.87.62.625 3 2.5 2.49.59.98 E 3.72 -.54 - b.99.4.39.55 e 5.46 BS.25 BS b.99.35.39.53 FK 2.54. b2.65 2.39.65.94 L 4.2 6..559.634 b3.65 2.37.65.94 L 3.7 4.29.46.69 b4 2.59 3.43.2.35 N 7.62 BS.3 b5 2.59 3.38.2.33 P 3.56 3.66.4.44 c.38.86.5.34 P - 6.98 -.275 c.38.76.5.3 Q 5.3 5.69.29.224 D 9.7 2.7.776.85 3 R 4.52 5.49.78.26 D 3.8 -.55-4 S 5.5 BS.27 BS Notes () Dimensioning and tolerancing per SME Y4.5M-994 (2) ontour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed.27 mm (.5") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D and E (5) Lead finish uncontrolled in L (6) Ø P to have a maximum draft angle of.5 to the top of the part with a maximum hole diameter of 3.9 mm (.54") (7) Outline conforms to JEDE outline TO-247 with exception of dimension c Revision: 6-Jun- Document Number: 95223 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOUMENT IS SUBJET TO HNGE WITHOUT NOTIE. THE PRODUTS DESRIBED HEREIN ND THIS DOUMENT RE SUBJET TO SPEIFI DISLIMERS, SET FORTH T www.vishay.com/doc?9
Outline Dimensions DIMENSIONS in millimeters and inches B (2) R/2 Q (3) E N S 2 (6) ΦP (Datum B) Ø K M D B M ΦP D2 2 x R (2) D D (4) 2 3 D Thermal pad 4 (5) L L See view B (4) E 2 x b2 3 x b. M M b4 2 x e View - Planting (c) (b, b3, b5) Base metal c DDE E Lead assignments Diodes. - node/open 2. - athode 3. - node (b, b2, b4) (4) Section -, D - D, E - E View B SYMBOL MILLIMETERS INHES MILLIMETERS INHES NOTES SYMBOL MIN. MX. MIN. MX. MIN. MX. MIN. MX. NOTES 4.65 5.3.83.29 D2.5.3.2.5 2.2 2.59.87.2 E 5.29 5.87.62.625 3 2.5 2.49.59.98 E 3.72 -.54 - b.99.4.39.55 e 5.46 BS.25 BS b.99.35.39.53 K 2.54. b2.65 2.39.65.94 L 4.2 6..559.634 b3.65 2.37.65.94 L 3.7 4.29.46.69 b4 2.59 3.43.2.35 N 7.62 BS.3 b5 2.59 3.38.2.33 P 3.56 3.66.4.44 c.38.86.5.34 P - 6.98 -.275 c.38.76.5.3 Q 5.3 5.69.29.224 D 9.7 2.7.776.85 3 R 4.52 5.49.78.26 D 3.8 -.55-4 S 5.5 BS.27 BS Notes () Dimensioning and tolerance per SME Y4.5M-994 (2) ontour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed.27 mm (.5") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D and E (5) Lead finish uncontrolled in L (6) P to have a maximum draft angle of.5 to the top of the part with a maximum hole diameter of 3.9 mm (.54") (7) Outline conforms to JEDE outline TO-247 with exception of dimension c Revision: 2-Jun- Document Number: 95253 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOUMENT IS SUBJET TO HNGE WITHOUT NOTIE. THE PRODUTS DESRIBED HEREIN ND THIS DOUMENT RE SUBJET TO SPEIFI DISLIMERS, SET FORTH T www.vishay.com/doc?9
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