Fast Soft Recovery Rectifier Diode, 60 A

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VS-6.PF1.PbF Series, VS-6.PF1.-M3 Series Fast Soft Recovery Rectifier Diode, 6 FETURES Glass passivated pellet chip junction 15 max. operating junction temperature 2 1 TO-247 modified Base cathode 2 3 1 2 3 TO-247 Base cathode + 2 Low forward voltage drop and short reverse recovery time Designed and qualified according to JEDE -JESD 47 Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 vailable PPLITIONS 1 3 athode node VS-6EPF1... PRODUT SUMMRY 1 3 node - - node VS-6PF1... Package TO-247 modified (2 pins), TO-247 I F(V) 6 V R 1 V, 12 V V F at I F 1.4 V I FSM 83 t rr 95 ns T J max. 15 Diode variation Single die Snap factor.6 These devices are intended for use in output rectification and freewheeling in inverters, choppers and converters as well as in input rectification where severe restrictions on conducted EMI should be met. DESRIPTION The VS-6EPF1... and VS-6PF1... soft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. MJOR RTINGS ND HRTERISTIS SYMBOL HRTERISTIS VLUES UNITS V RRM 1 to 12 V I F(V) Sinusoidal waveform 6 I FSM 83 t rr 1, - 1 /μs 95 ns V F 3, T J = 25 1.2 V T J Range -4 to +15 VOLTGE RTINGS PRT NUMBER VS-6EPF1PbF, VS-6PF1PbF VS-6EPF1-M3, VS-6PF1-M3 VS-6EPF12PbF, VS-6PF12PbF VS-6EPF12-M3, VS-6PF12-M3 V RRM, MXIMUM PEK REVERSE VOLTGE V V RSM, MXIMUM NON-REPETITIVE PEK REVERSE VOLTGE V 1 11 12 13 I RRM T 15 m 12 Revision: 11-Feb-16 1 Document Number: 93721 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOUMENT IS SUBJET TO HNGE WITHOUT NOTIE. THE PRODUTS DESRIBED HEREIN ND THIS DOUMENT RE SUBJET TO SPEIFI DISLIMERS, SET FORTH T www.vishay.com/doc?91

VS-6.PF1.PbF Series, VS-6.PF1.-M3 Series BSOLUTE MXIMUM RTINGS PRMETER SYMBOL TEST ONDITIONS VLUES UNITS Maximum average forward current I F(V) T = 13, 18 conduction half sine wave 6 Maximum peak one cycle 1 ms sine pulse, rated V RRM applied 7 I FSM non-repetitive surge current 1 ms sine pulse, no voltage reapplied 83 Maximum I 2 t for fusing I 2 1 ms sine pulse, rated V RRM applied 245 t 2 s 1 ms sine pulse, no voltage reapplied 346 Maximum I 2 t for fusing I 2 t t =.1 ms to 1 ms, no voltage reapplied 34 6 2 s ELETRIL SPEIFITIONS PRMETER SYMBOL TEST ONDITIONS VLUES UNITS Maximum forward voltage drop V FM 6, T J = 25 1.4 V Forward slope resistance r t 4.6 m T J = 15 Threshold voltage V F(TO).9 V T J = 25.1 Maximum reverse leakage current I RM V R = Rated V RRM T J = 15 12 m REOVERY HRTERISTIS PRMETER SYMBOL TEST ONDITIONS VLUES UNITS Reverse recovery time t rr IF at 6 pk 48 ns Reverse recovery current I rr 25 /μs 8 Reverse recovery charge Q rr 25 2.7 μ Snap factor S.6 I FM dir dt t rr t Q rr I RM(RE) THERML - MEHNIL SPEIFITIONS PRMETER SYMBOL TEST ONDITIONS VLUES UNITS Maximum junction and storage temperature range T J, T Stg -4 to +15 Maximum thermal resistance, junction to case R thj D operation.4 Maximum thermal resistance, junction to ambient Typical thermal resistance, case to heatsink pproximate weight Mounting torque Marking device R thj 4 R ths Mounting surface, smooth and greased.2 /W 6 g.21 oz. minimum 6 (5) kgf cm maximum 12 (1) (Ibf in) ase style TO-247 modified ase style TO-247 6EPF1 6EPF12 6PF1 6PF12 Revision: 11-Feb-16 2 Document Number: 93721 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOUMENT IS SUBJET TO HNGE WITHOUT NOTIE. THE PRODUTS DESRIBED HEREIN ND THIS DOUMENT RE SUBJET TO SPEIFI DISLIMERS, SET FORTH T www.vishay.com/doc?91

VS-6.PF1.PbF Series, VS-6.PF1.-M3 Series Maximum llowable ase Temperature ( ) 15 14 13 12 11 1 R thj (D) =.4 /W 6 Ø onduction angle 12 3 9 18 9 1 2 3 4 5 6 7 Maximum verage Forward Power Loss (W) 14 12 1 8 6 4 2 D 18 12 9 6 3 RMS limit Ø onduction period T J = 15 2 4 6 8 1 verage Forward urrent () verage Forward urrent () Fig. 1 - urrent Rating haracteristics Fig. 4 - Forward Power Loss haracteristics Maximum llowable ase Temperature ( ) 15 14 13 12 11 1 3 6 R thj (D) =.4 /W 12 Ø onduction period D Peak Half Sine Wave Forward urrent () 8 7 6 5 4 t any rated load condition and with rated V RRM applied following surge. Initial T J = 15 at 6 Hz.83 s at 5 Hz.1 s 9 9 18 2 4 6 8 1 3 1 1 1 verage Forward urrent () Fig. 2 - urrent Rating haracteristics Number of Equal mplitude Half ycle urrent Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge urrent Maximum verage Forward Power Loss (W) 1 9 8 7 6 5 4 3 2 1 18 12 9 6 3 RMS limit Ø onduction angle T J = 15 1 2 3 4 5 6 7 Peak Half Sine Wave Forward urrent () 9 8 7 6 5 4 Maximum non-repetitive surge current versus pulse train duration. Initial T J = 15 No voltage reapplied Rated V RRM reapplied 3.1.1 1 verage Forward urrent () Pulse Train Duration (s) Fig. 3 - Forward Power Loss haracteristics Fig. 6 - Maximum Non-Repetitive Surge urrent Revision: 11-Feb-16 3 Document Number: 93721 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOUMENT IS SUBJET TO HNGE WITHOUT NOTIE. THE PRODUTS DESRIBED HEREIN ND THIS DOUMENT RE SUBJET TO SPEIFI DISLIMERS, SET FORTH T www.vishay.com/doc?91

VS-6.PF1.PbF Series, VS-6.PF1.-M3 Series Instantaneous Forward urrent () 1 1 1 T J = 25 T J = 15 1.5 1. 1.5 2. 2.5 3. Instantaneous Forward Voltage (V) Fig. 7 - Forward Voltage Drop haracteristics 6 5 T J = 25 12 1 T J = 25 I FM = 6 t rr - Typical Reverse Recovery Time (ns) 4 3 2 1 I FM = 5 I FM = 3 I FM = 6 I FM = 1 I FM = 1 4 8 12 16 2 Q rr - Typical Reverse Recovery harge (µ) 8 6 4 2 I FM = 1 I FM = 3 I FM = 5 I FM = 1 4 8 12 16 2 di/dt - Rate of Fall of Forward urrent (/µs) di/dt - Rate of Fall of Forward urrent (/µs) Fig. 8 - Recovery Time haracteristics, T J = 25 Fig. 1 - Recovery harge haracteristics, T J = 25 t rr - Typical Reverse Recovery Time (ns) 12 1 8 6 4 2 I FM = 6 I FM = 3 I FM = 1 I FM = 1 T J = 15 I FM = 5 4 8 12 16 2 Q rr - Typical Reverse Recovery harge (µ) 25 2 15 1 T J = 15 I FM = 6 I FM = 3 I FM = 1 5 I FM = 5 I FM = 1 4 8 12 16 2 di/dt - Rate of Fall of Forward urrent (/µs) di/dt - Rate of Fall of Forward urrent (/µs) Fig. 9 - Recovery Time haracteristics, T J = 15 Fig. 11 - Recovery harge haracteristics, T J = 15 Revision: 11-Feb-16 4 Document Number: 93721 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOUMENT IS SUBJET TO HNGE WITHOUT NOTIE. THE PRODUTS DESRIBED HEREIN ND THIS DOUMENT RE SUBJET TO SPEIFI DISLIMERS, SET FORTH T www.vishay.com/doc?91

VS-6.PF1.PbF Series, VS-6.PF1.-M3 Series I rr - Typical Reverse Recovery urrent () 45 4 35 3 25 2 15 1 5 T J = 25 I FM = 6 I FM = 3 I FM = 1 I FM = 5 I FM = 1 I rr - Typical Reverse Recovery urrent () 6 5 4 3 2 1 T J = 15 I FM = 6 I FM = 3 I FM = 1 I FM = 5 I FM = 1 4 8 12 16 2 4 8 12 16 2 di/dt - Rate of Fall of Forward urrent (/µs) di/dt - Rate of Fall of Forward urrent (/µs) Fig. 12 - Recovery urrent haracteristics, T J = 25 Fig. 13 - Recovery urrent haracteristics, T J = 15 Z thj - Transient Thermal Impedance ( /W) 1.1.1 Single pulse D =.5 D =.33 D =.25 D =.17 D =.8.1.1.1.1.1 1 Square Wave Pulse Duration (s) Fig. 14 - Thermal Impedance Z thj haracteristics Steady state value (D operation) 1 Revision: 11-Feb-16 5 Document Number: 93721 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOUMENT IS SUBJET TO HNGE WITHOUT NOTIE. THE PRODUTS DESRIBED HEREIN ND THIS DOUMENT RE SUBJET TO SPEIFI DISLIMERS, SET FORTH T www.vishay.com/doc?91

VS-6.PF1.PbF Series, VS-6.PF1.-M3 Series ORDERING INFORMTION TBLE Device code VS- 6 E P F 12 PbF 1 2 3 4 5 6 7 1 - product 2 - urrent rating (6 = 6 ) 3 - ircuit configuration: E = single diode = single diode, 3 pins 4 - Package: P = TO-247/TO-247 modified 5 - Type of silicon: F = fast recovery 6 - Voltage code x 1 = V RRM 1 = 1 V 12 = 12 V 7 - Environmental digit: PbF = lead (Pb)-free and RoHS-compliant -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMTION (Example) PREFERRED P/N QUNTITY PER T/R MINIMUM ORDER QUNTITY PKGING DESRIPTION VS-6EPF1PbF 25 5 ntistatic plastic tubes VS-6EPF1-M3 25 5 ntistatic plastic tubes VS-6PF1PbF 25 5 ntistatic plastic tubes VS-6PF1-M3 25 5 ntistatic plastic tubes VS-6EPF12PbF 25 5 ntistatic plastic tubes VS-6EPF12-M3 25 5 ntistatic plastic tubes VS-6PF12PbF 25 5 ntistatic plastic tubes VS-6PF12-M3 25 5 ntistatic plastic tubes LINKS TO RELTED DOUMENTS Dimensions Part marking information TO-247 modified TO-247 TO-247 modified PbF TO-247 modified -M3 TO-247 PbF TO-247 -M3 www.vishay.com/doc?95541 www.vishay.com/doc?95542 www.vishay.com/doc?95255 www.vishay.com/doc?95442 www.vishay.com/doc?95226 www.vishay.com/doc?957 Revision: 11-Feb-16 6 Document Number: 93721 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOUMENT IS SUBJET TO HNGE WITHOUT NOTIE. THE PRODUTS DESRIBED HEREIN ND THIS DOUMENT RE SUBJET TO SPEIFI DISLIMERS, SET FORTH T www.vishay.com/doc?91

DIMENSIONS in millimeters and inches TO-247 modified - 5 mils L/F Outline Dimensions B (2) R/2 Q (3) E S 2 (6) Ø P (Datum B) Ø K M D B M Ø P1 D2 2 x R (2) D D1 (4) 1 2 3 D Thermal pad 4 (5) L1 L See view B (4) E1 2 x b2 3 x b.1 M M b4 2 x e 1 View - Plating (b1, b3, b5) Base metal DDE E (c) c1 (b, b2, b4) (4) Section -, D - D, E - E View B SYMBOL MILLIMETERS INHES MILLIMETERS INHES NOTES SYMBOL MIN. MX. MIN. MX. MIN. MX. MIN. MX. NOTES 4.65 5.31.183.29 D2.51 1.35.2.53 1 2.21 2.59.87.12 E 15.29 15.87.62.625 3 2 1.17 1.37.46.54 E1 13.46 -.53 - b.99 1.4.39.55 e 5.46 BS.215 BS b1.99 1.35.39.53 Ø K.254.1 b2 1.65 2.39.65.94 L 14.2 16.1.559.634 b3 1.65 2.34.65.92 L1 3.71 4.29.146.169 b4 2.59 3.43.12.135 Ø P 3.56 3.66.14.144 b5 2.59 3.38.12.133 Ø P1-7.39 -.291 c.38.89.15.35 Q 5.31 5.69.29.224 c1.38.84.15.33 R 4.52 5.49.178.216 D 19.71 2.7.776.815 3 S 5.51 BS.217 BS D1 13.8 -.515-4 Notes (1) Dimensioning and tolerance per SME Y14.5M-1994 (2) ontour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed.127 mm (.5") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (.154") (7) Outline conforms to JEDE outline TO-247 with exception of dimension c and Q Revision: 2-pr-17 1 Document Number: 95541 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOUMENT IS SUBJET TO HNGE WITHOUT NOTIE. THE PRODUTS DESRIBED HEREIN ND THIS DOUMENT RE SUBJET TO SPEIFI DISLIMERS, SET FORTH T www.vishay.com/doc?91

TO-247-5 mils L/F Outline Dimensions DIMENSIONS in millimeters and inches B (2) R/2 Q (3) E S 2 Ø K M D B M (6) Φ P (Datum B) D2 Φ P1 2 x R (2) D D1 (4) 1 2 3 D Thermal pad 4 (5) L1 L See view B (4) E1.1 M D B M 2 x b2 3 x b.1 M M b4 2 x e 1 View - Plating (b1, b3, b5) Base metal DDE E (c) c1 (b, b2, b4) (4) Section -, D - D, E - E View B SYMBOL MILLIMETERS INHES MILLIMETERS INHES NOTES SYMBOL MIN. MX. MIN. MX. MIN. MX. MIN. MX. NOTES 4.65 5.31.183.29 D2.51 1.35.2.53 1 2.21 2.59.87.12 E 15.29 15.87.62.625 3 2 1.17 1.37.46.54 E1 13.46 -.53 - b.99 1.4.39.55 e 5.46 BS.215 BS b1.99 1.35.39.53 Ø K.254.1 b2 1.65 2.39.65.94 L 14.2 16.1.559.634 b3 1.65 2.34.65.92 L1 3.71 4.29.146.169 b4 2.59 3.43.12.135 Ø P 3.56 3.66.14.144 b5 2.59 3.38.12.133 Ø P1-7.39 -.291 c.38.89.15.35 Q 5.31 5.69.29.224 c1.38.84.15.33 R 4.52 5.49.178.216 D 19.71 2.7.776.815 3 S 5.51 BS.217 BS D1 13.8 -.515-4 Notes (1) Dimensioning and tolerancing per SME Y14.5M-1994 (2) ontour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed.127 mm (.5") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (.154") (7) Outline conforms to JEDE outline TO-247 with exception of dimension c and Q Revision: 2-pr-17 1 Document Number: 95542 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOUMENT IS SUBJET TO HNGE WITHOUT NOTIE. THE PRODUTS DESRIBED HEREIN ND THIS DOUMENT RE SUBJET TO SPEIFI DISLIMERS, SET FORTH T www.vishay.com/doc?91

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