I D, Drain Current (A) StrongIRFET IRFB774PbF Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies OR-ing and redundant power switches DC/DC and AC/DC converters DC/AC Inverters G D S HEXFET Power MOSFET V DSS R DS(on) typ. max I D 75V 6.m 7.3m 87A Benefits Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dv/dt and di/dt Capability Lead-Free, RoHS Compliant S D G TO-22AB IRFB774PbF G D S Gate Drain Source Standard Pack Base part number Package Type Orderable Part Number Form Quantity IRFB774PbF TO-22 Tube 5 IRFB774PbF R DS (on), Drain-to -Source On Resistance (m ) 3 I D = 52A 25 8 2 6 5 T J = 25 C 4 5 2 4 8 2 6 2 V GS, Gate-to-Source Voltage (V) 25 5 75 25 5 75 T C, CaseTemperature ( C) Fig. Typical On-Resistance vs. Gate Voltage Fig 2. Maximum Drain Current vs. Case Temperature www.irf.com 25 International Rectifier Submit Datasheet Feedback March 5, 25
Absolute Maximum Rating IRFB774PbF Symbol Parameter Max. Units I D @ T C = 25 C Continuous Drain Current, V GS @ V 87 I D @ T C = C Continuous Drain Current, V GS @ V 62 A I DM Pulsed Drain Current 275 P D @T C = 25 C Maximum Power Dissipation 43 W Linear Derating Factor.95 W/ C V GS Gate-to-Source Voltage ± 2 V T J Operating Junction and -55 to + 75 T STG Storage Temperature Range C Soldering Temperature, for seconds (.6mm from case) 3 Mounting Torque, 6-32 or M3 Screw lbf in (. N m) Avalanche Characteristics E AS (Thermally limited) Single Pulse Avalanche Energy 6 E AS (Thermally limited) Single Pulse Avalanche Energy 24 mj I AR Avalanche Current A See Fig. 5, 6, 23a, 23b E AR Repetitive Avalanche Energy mj Thermal Resistance Symbol Parameter Typ. Max. Units R JC Junction-to-Case.5 R CS Case-to-Sink, Flat Greased Surface.5 C/W R JA Junction-to-Ambient 62 Static @ (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 75 V V GS = V, I D = 25µA V (BR)DSS / T J Breakdown Voltage Temp. Coefficient.5 V/ C Reference to 25 C, I D = ma R DS(on) Static Drain-to-Source On-Resistance 6. 7.3 m V GS = V, I D = 52A 7. V GS = 6.V, I D = 26A V GS(th) Gate Threshold Voltage 2. 3.7 V V DS = V GS, I D = µa I DSS Drain-to-Source Leakage Current. V DS =75 V, V GS = V µa 5 V DS =75V,V GS = V,T J =25 C Gate-to-Source Forward Leakage V I GSS na GS = 2V Gate-to-Source Reverse Leakage - V GS = -2V R G Gate Resistance 2. Notes: Repetitive rating; pulse width limited by max. junction temperature. Limited by T Jmax, starting, L =.7mH, R G = 5, I AS = 52A, V GS =V. I SD 52A, di/dt 53A/µs, V DD V (BR)DSS, T J 75 C. Pulse width 4µs; duty cycle 2%. C oss eff. (TR) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from to 8% V DSS. C oss eff. (ER) is a fixed capacitance that gives the same energy as C oss while V DS is rising from to 8% V DSS. R is measured at T J approximately 9 C. Limited by T Jmax, starting, L = mh, R G = 5, I AS = 22A, V GS =V. 2 www.irf.com 25 International Rectifier Submit Datasheet Feedback March 5, 25
IRFB774PbF Dynamic Electrical Characteristics @ (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 67 S V DS = V, I D =52A Q g Total Gate Charge 8 22 I D = 52A Q gs Gate-to-Source Charge 2 V DS = 38V nc Q gd Gate-to-Drain Charge 27 V GS = V Q sync Total Gate Charge Sync. (Qg Qgd) 54 t d(on) Turn-On Delay Time 2 V DD = 38V t r Rise Time 6 I D = 52A ns t d(off) Turn-Off Delay Time 55 R G = 2.7 t f Fall Time 45 V GS = V C iss Input Capacitance 465 V GS = V C oss Output Capacitance 37 V DS = 25V C rss Reverse Transfer Capacitance 24 ƒ =.MHz, See Fig.7 pf Effective Output Capacitance C oss eff.(er) 33 V (Energy Related) GS = V, VDS = V to 6V C oss eff.(tr) Output Capacitance (Time Related) 425 V GS = V, VDS = V to 6V Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol D I S 87 (Body Diode) showing the A G Pulsed Source Current integral reverse I SM 275 S (Body Diode) p-n junction diode. V SD Diode Forward Voltage.2 V,I S = 52A,V GS = V dv/dt Peak Diode Recovery dv/dt V/ns T J = 75 C,I S =52A,V DS = 75V t rr Reverse Recovery Time 4 V DD = 64V ns 5 T J = 25 C I F = 52A, Q rr Reverse Recovery Charge 46 di/dt = A/µs nc 62 T J = 25 C I RRM Reverse Recovery Current 2.3 A 3 www.irf.com 25 International Rectifier Submit Datasheet Feedback March 5, 25
C, Capacitance (pf) V GS, Gate-to-Source Voltage (V) I D, Drain-to-Source Current (A) (Normalized) I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) IRFB774PbF VGS TOP 5V V 7.V 6.V 5.5V 5.V 4.8V BOTTOM 4.5V VGS TOP 5V V 7.V 6.V 5.5V 5.V 4.8V BOTTOM 4.5V 4.5V 4.5V 6µs PULSE WIDTH Tj = 25 C. V DS, Drain-to-Source Voltage (V) 6µs PULSE WIDTH Tj = 75 C. V DS, Drain-to-Source Voltage (V) Fig 3. Typical Output Characteristics Fig 4. Typical Output Characteristics V DS = 25V 6µs PULSE WIDTH R DS(on), Drain-to-Source On Resistance 2.6 2.4 2.2 2. I D = 52A V GS = V T J = 75 C.8.6.4.2..8. 2. 3. 4. 5. 6. V GS, Gate-to-Source Voltage (V).6.4-6 -4-2 2 4 6 8 2 4 6 8 T J, Junction Temperature ( C) Fig 5. Typical Transfer Characteristics Fig 6. Normalized On-Resistance vs. Temperature V GS = V, f = MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd Ciss 4 2 8 I D = 52A V DS = 6V V DS = 38V V DS= 5V 6 4 Coss Crss 2 V DS, Drain-to-Source Voltage (V) Fig 7. Typical Capacitance vs. Drain-to-Source Voltage 2 3 4 5 6 7 8 9 Q G Total Gate Charge (nc) Fig 8. Typical Gate Charge vs. Gate-to-Source Voltage 4 www.irf.com 25 International Rectifier Submit Datasheet Feedback March 5, 25
V (BR)DSS, Drain-to-Source Breakdown Voltage (V) I SD, Reverse Drain Current (A) I D, Drain-to-Source Current (A) Energy (µj) IRFB774PbF T J = 75 C msec msec µsec OPERATION IN THIS AREA LIMITED BY R DS (on) V GS = V..2.4.6.8..2.4 V SD, Source-to-Drain Voltage (V) Fig 9. Typical Source-Drain Diode Forward Voltage Tc = 25 C Tj = 75 C Single Pulse.. DC V DS, Drain-toSource Voltage (V) Fig. Maximum Safe Operating Area 95 Id =.ma.8 9.6 85.4 8.2 75-6 -4-2 2 4 6 8 2468 T J, Temperature ( C ). 2 4 6 8 V DS, Drain-to-Source Voltage (V) Fig. Drain-to-Source Breakdown Voltage Fig 2. Typical C oss Stored Energy R DS (on), Drain-to -Source On Resistance (m ) 2. 6. V GS = 5.5V V GS = 6.V V GS = 7.V V GS = 8.V V GS = V 2. 8. 4. 5 5 2 I D, Drain Current (A) Fig 3. Typical On-Resistance vs. Drain Current 5 www.irf.com 25 International Rectifier Submit Datasheet Feedback March 5, 25
Avalanche Current (A) Thermal Response ( Z thjc ) C/W E AR, Avalanche Energy (mj) IRFB774PbF D =.5...2..5.2. SINGLE PULSE Notes: ( THERMAL RESPONSE ). Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc + Tc. E-6 E-5.... t, Rectangular Pulse Duration (sec) Fig 4. Maximum Effective Transient Thermal Impedance, Junction-to-Case Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 5 C and Tstart =25 C (Single Pulse) Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25 C and Tstart = 5 C. (Single Pulse)..E-6.E-5.E-4.E-3.E-2.E- tav (sec) Fig 5. Avalanche Current vs. Pulse Width 6 4 2 8 6 4 2 TOP Single Pulse BOTTOM.% Duty Cycle I D = 52A 25 5 75 25 5 75 Starting T J, Junction Temperature ( C) Fig 6. Maximum Avalanche Energy vs. Temperature Notes on Repetitive Avalanche Curves, Figures 5, 6: (For further info, see AN-5 at www.irf.com).avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long ast jmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 23a, 23b. 4. P D (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (.3 factor accounts for voltage increase during avalanche). 6. I av = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed T jmax (assumed as 25 C in Figure 4, 5). t av = Average time in avalanche. D = Duty cycle in avalanche = tav f Z thjc (D, t av ) = Transient thermal resistance, see Figures 3) PD (ave) = /2 (.3 BV I av ) = T/ Z thjc I av = 2 T/ [.3 BV Z th ] E AS (AR) = P D (ave) t av 6 www.irf.com 25 International Rectifier Submit Datasheet Feedback March 5, 25
Q RR (nc) I RRM (A) Q RR (nc) V GS (th) Gate threshold Voltage (V) I RRM (A) IRFB774PbF 4. 3. 6 2 I F = 36A V R = 64V T J = 25 C 2. I D = µa I D =.ma I D =.A 8. 4. -6-4 -2 2 4 6 8 2 4 6 8 T J, Temperature ( C ) 2 4 6 8 di F /dt (A/µs) Fig 7. Threshold Voltage vs. Temperature Fig 8. Typical Recovery Current vs. dif/dt 6 2 I F = 52A V R = 64V T J = 25 C 28 24 2 I F = 36A V R = 64V T J = 25 C 8 6 2 4 8 4 2 4 6 8 2 4 6 8 di F /dt (A/µs) di F /dt (A/µs) Fig 9. Typical Recovery Current vs. dif/dt Fig 2. Typical Stored Charge vs. dif/dt 28 24 2 I F = 52A V R = 64V T J = 25 C 6 2 8 4 2 4 6 8 di F /dt (A/µs) Fig 2. Typical Stored Charge vs. dif/dt 7 www.irf.com 25 International Rectifier Submit Datasheet Feedback March 5, 25
IRFB774PbF Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET Power MOSFETs V (BR)DSS 5V tp V DS L DRIVER R G 2V tp D.U.T I AS. + - V DD A I AS Fig 23a. Unclamped Inductive Test Circuit Fig 23b. Unclamped Inductive Waveforms Fig 24a. Switching Time Test Circuit Fig 24b. Switching Time Waveforms Vds Id Vgs VDD Vgs(th) Qgs Qgs2 Qgd Qgodr Fig 25a. Gate Charge Test Circuit Fig 25b. Gate Charge Waveform 8 www.irf.com 25 International Rectifier Submit Datasheet Feedback March 5, 25
IRFB774PbF TO-22AB Package Outline (Dimensions are shown in millimeters (inches)) TO-22AB Part Marking Information E X A M P L E : T H IS IS A N IR F L O T C O D E 7 8 9 ASSEM BLED O N W W 9, 2 IN TH E ASSEM BLY LIN E "C" N o te : "P " in a s s e m b ly lin e p o s itio n indicates "Lead - Free" IN T E R N A T IO N A L R E C T IF IE R LO G O ASSEM BLY LO T C O D E P A R T N U M B E R D A T E C O D E YEAR = 2 W EEK 9 LIN E C TO-22AB packages are not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 www.irf.com 25 International Rectifier Submit Datasheet Feedback March 5, 25
IRFB774PbF Qualification Information Industrial Qualification Level (per JEDEC JESD47F) Moisture Sensitivity Level TO-22 N/A RoHS Compliant Yes Qualification standards can be found at International Rectifier s web site: http://www.irf.com/product-info/reliability/ Applicable version of JEDEC standard at the time of product release. Revision History Date 8/29/24 Updated latest package outline on page 9. Comment 3/5/25 Updated E AS (L =mh) = 24mJ on page 2 Updated note 8 Limited by T Jmax, starting, L = mh, R G = 5, I AS = 22A, V GS =V on page 2 IR WORLD HEADQUARTERS: N. Sepulveda Blvd., El Segundo, California 9245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ www.irf.com 25 International Rectifier Submit Datasheet Feedback March 5, 25