Features l Logic Level l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. G TO-220AB IRL1404Z IRL1404Z IRL1404ZS IRL1404ZL HEXFET Power MOSFET D S D 2 Pak IRL1404ZS PD - 94804B V DSS = 40V R DS(on) = 3.1mΩ I D = 75A TO-262 IRL1404ZL Absolute Maximum Ratings Parameter Max. Units I D @ T C = 25 C Continuous Drain Current, V GS @ 10V (Silicon Limited) 200 I D @ T C = C Continuous Drain Current, V GS @ 10V 140 A I D @ T C = 25 C Continuous Drain Current, V GS @ 10V (Package Limited) 75 I DM Pulsed Drain Current c 790 P D @T C = 25 C Power Dissipation 230 W Linear Derating Factor 1.5 W/ C V GS Gate-to-Source Voltage ± 16 V E AS (Thermally limited) Single Pulse Avalanche Energyd 220 mj E AS (Tested ) Single Pulse Avalanche Energy Tested Value h 490 I AR Avalanche Currentc See Fig.12a, 12b, 15, 16 A E AR Repetitive Avalanche Energy g mj T J Operating Junction and -55 to 175 T STG Storage Temperature Range C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) 10 lbfyin (1.1Nym) Mounting Torque, 6-32 or M3 screw Thermal Resistance Parameter Typ. Max. Units R θjc Junction-to-Case 0.65 C/W R θcs Case-to-Sink, Flat, Greased Surface i 0.50 R θja Junction-to-Ambient i 62 R θja Junction-to-Ambient (PCB Mount) j 40 www.irf.com 1 6/1/04
IRL1404Z/S/L Electrical Characteristics @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units V (BR)DSS Drain-to-Source Breakdown Voltage 40 V V (BR)DSS / T J Breakdown Voltage Temp. Coefficient 0.034 V/ C 2.5 3.1 R DS(on) Static Drain-to-Source On-Resistance 4.7 mω 5.9 V GS(th) Gate Threshold Voltage 1.4 2.7 V gfs Forward Transconductance 120 S I DSS Drain-to-Source Leakage Current 20 µa 250 I GSS Gate-to-Source Forward Leakage 200 na Gate-to-Source Reverse Leakage -200 Q g Total Gate Charge 75 110 Q gs Gate-to-Source Charge 28 nc Q gd Gate-to-Drain ("Miller") Charge 40 t d(on) Turn-On Delay Time 19 t r Rise Time 180 t d(off) Turn-Off Delay Time 30 ns t f Fall Time 49 V GS = 5.0V e L D Internal Drain Inductance 4.5 Between lead, nh 6mm (0.25in.) L S Internal Source Inductance 7.5 from package and center of die contact C iss Input Capacitance 5080 V GS = 0V C oss Output Capacitance 970 V DS = 25V C rss Reverse Transfer Capacitance 570 pf ƒ = 1.0MHz C oss Output Capacitance 3310 C oss Output Capacitance 870 C oss eff. Effective Output Capacitance 1280 Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units I S Continuous Source Current 180 Conditions V GS = 0V, I D = 250µA Reference to 25 C, I D = 1mA V GS = 10V, I D = 75A e V GS = 5.0V, I D = 40A e V GS = 4.5V, I D = 40A e V DS = V GS, I D = 250µA V DS = 10V, I D = 75A V DS = 40V, V GS = 0V V DS = 40V, V GS = 0V, T J = 125 C V GS = 16V V GS = -16V I D = 75A V DS = 32V V GS = 5.0V e V DD = 20V I D = 75A R G = 4.0Ω V GS = 0V, V DS = 1.0V, ƒ = 1.0MHz V GS = 0V, V DS = 32V, ƒ = 1.0MHz V GS = 0V, V DS = 0V to 32V f Conditions MOSFET symbol D (Body Diode) A showing the I SM Pulsed Source Current 720 integral reverse G (Body Diode)Ãc p-n junction diode. S V SD Diode Forward Voltage 1.3 V T J = 25 C, I S = 75A, V GS = 0V e t rr Reverse Recovery Time 26 39 ns T J = 25 C, I F = 75A, V DD = 20V Q rr Reverse Recovery Charge 18 27 nc di/dt = A/µs e t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LSLD) G D S Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). Limited by T Jmax, starting T J = 25 C, L = 0.079mH, R G = 25Ω, I AS = 75A, V GS =10V. Part not recommended for use above this value. ƒ Pulse width 1.0ms; duty cycle 2%. C oss eff. is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. Limited by T Jmax, see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. This value determined from sample failure population. % tested to this value in production. This is only applied to TO-220AB package. ˆ When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. 2 www.irf.com
I D, Drain-to-Source Current (Α) G fs, Forward Transconductance (S) I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) IRL1404Z/S/L 0 VGS TOP 10V 7.0V 5.0V 4.5V 4.0V 3.5V 3.3V BOTTOM 3.0V 0 VGS TOP 10V 7.0V 5.0V 4.5V 4.0V 3.5V 3.3V BOTTOM 3.0V 3.0V 10 10 3.0V 60µs PULSE WIDTH Tj = 25 C 1 0.1 1 10 V DS, Drain-to-Source Voltage (V) 60µs PULSE WIDTH Tj = 175 C 1 0.1 1 10 V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 0 200 T J = 175 C T J = 25 C 150 T J = 175 C 10 T J = 25 C 50 1.0 V DS = 10V 60µs PULSE WIDTH 2 3 4 5 6 7 8 9 10 0 V DS = 10V 0 50 150 200 V GS, Gate-to-Source Voltage (V) I D,Drain-to-Source Current (A) Fig 3. Typical Transfer Characteristics Fig 4. Typical Forward Transconductance vs. Drain Current www.irf.com 3
I SD, Reverse Drain Current (A) I D, Drain-to-Source Current (A) C, Capacitance(pF) V GS, Gate-to-Source Voltage (V) IRL1404Z/S/L 000 V GS = 0V, f = 1 MHZ C iss = C gs C gd, C ds SHORTED C rss = C gd C oss = C ds C gd 6.0 5.0 I D = 75A V DS = 32V V DS = 20V 00 4.0 C iss 3.0 0 C oss C rss 2.0 1.0 1 10 0.0 0 20 40 60 80 V DS, Drain-to-Source Voltage (V) Q G Total Gate Charge (nc) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 0.00 00 OPERATION IN THIS AREA LIMITED BY R DS (on) T J = 175 C 0.00 10.00 T J = 25 C V GS = 0V 1.00 0.0 0.5 1.0 1.5 2.0 2.5 V SD, Source-to-Drain Voltage (V) 10 1 Tc = 25 C Tj = 175 C Single Pulse µsec 1msec 10msec 1 10 0 V DS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com
I D, Drain Current (A) R DS(on), Drain-to-Source On Resistance (Normalized) IRL1404Z/S/L 200 Limited By Package 2.0 I D = 75A V GS = 10V 150 1.5 1.0 50 0 25 50 75 125 150 175 T C, Case Temperature ( C) 0.5-60 -40-20 0 20 40 60 80 120 140 160 180 T J, Junction Temperature ( C) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Normalized On-Resistance vs. Temperature 1 Thermal Response ( Z thjc ) 0.1 0.01 0.001 0.0001 D = 0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) R 1 R 2 R 3 R 1 R 2 R 3 τ J τ J τ 1 τ τ 2 τ 3 1 τ 2 τ 3 Ci= τi/ri Ci i/ri 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t 1, Rectangular Pulse Duration (sec) τ C τ Ri ( C/W) τi (sec) 0.185 0.000213 0.241 0.001234 0.227 0.021750 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc Tc Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5
V GS(th) Gate threshold Voltage (V) E AS, Single Pulse Avalanche Energy (mj) IRL1404Z/S/L 15V 900 R G V DS 20V V GS tp L D.U.T IAS 0.01Ω DRIVER - V DD A 800 700 600 500 400 I D TOP 16A 26A BOTTOM 75A Fig 12a. Unclamped Inductive Test Circuit tp V (BR)DSS 300 200 0 25 50 75 125 150 175 Starting T J, Junction Temperature ( C) I AS Fig 12b. Unclamped Inductive Waveforms Fig 12c. Maximum Avalanche Energy vs. Drain Current Q G 10 V Q GS Q GD 3.0 V G 2.5 Current Regulator Same Type as D.U.T. Charge Fig 13a. Basic Gate Charge Waveform 2.0 1.5 I D = 250µA 12V.2µF 50KΩ.3µF 1.0 V GS 3mA D.U.T. V - DS 0.5-75 -50-25 0 25 50 75 125 150 175 200 T J, Temperature ( C ) I G I D Current Sampling Resistors Fig 14. Threshold Voltage vs. Temperature Fig 13b. Gate Charge Test Circuit 6 www.irf.com
E AR, Avalanche Energy (mj) Avalanche Current (A) IRL1404Z/S/L 0 Duty Cycle = Single Pulse 0.01 Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25 C due to avalanche losses 10 0.05 0.10 1 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current vs.pulsewidth 250 200 150 50 0 TOP Single Pulse BOTTOM 1% Duty Cycle I D = 75A 25 50 75 125 150 175 Starting T J, Junction Temperature ( C) Notes on Repetitive Avalanche Curves, Figures 15, 16: (For further info, see AN-5 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long ast jmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. P D (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. I av = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed T jmax (assumed as 25 C in Figure 15, 16). t av = Average time in avalanche. D = Duty cycle in avalanche = t av f Z thjc (D, t av ) = Transient thermal resistance, see figure 11) P D (ave) = 1/2 ( 1.3 BV I av ) = DT/ Z thjc I av = 2DT/ [1.3 BV Z th ] E AS (AR) = P D (ave) t av Fig 16. Maximum Avalanche Energy vs. Temperature www.irf.com 7
IRL1404Z/S/L - D.U.T ƒ - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - Reverse Recovery Current Driver Gate Drive Period P.W. D.U.T. I SD Waveform Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt D = P.W. Period V GS =10V V DD * R G dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test V DD - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% I SD * V GS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET Power MOSFETs V DS R D R G V GS D.U.T. - V DD 10V Pulse Width 1 µs Duty Factor 0.1 % Fig 18a. Switching Time Test Circuit V DS 90% 10% V GS t d(on) t r t d(off) t f Fig 18b. Switching Time Waveforms 8 www.irf.com
IRL1404Z/S/L TO-220AB Package Outline Dimensions are shown in millimeters (inches) 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) - A - 4.69 (.185) 4.20 (.165) - B - 1.32 (.052) 1.22 (.048) 15.24 (.600) 14.84 (.584) 4 6.47 (.255) 6.10 (.240) 1 2 3 1.15 (.045) MIN LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN 14.09 (.555) 13.47 (.530) 4.06 (.160) 3.55 (.140) 3X 1.40 (.055) 1.15 (.045) 3X 0.93 (.037) 0.69 (.027) 0.36 (.014) M B A M 3X 2.92 (.115) 2.64 (.104) 0.55 (.022) 0.46 (.018) 2.54 (.) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information (;$03/( 7,6,6$1,5) $66(0%/('21::,17($66(0%/</,1(& Note: "P" in assembly line position indicates "Lead-Free",17(51$7,21$/ 5(&7,),(5 /2*2 $66(0%/< 3$57180%(5 '$7(&2'( <($5 :((. /,1(& www.irf.com 9
IRL1404Z/S/L D 2 Pak Package Outline Dimensions are shown in millimeters (inches) D 2 Pak Part Marking Information 7,6,6$1,5)6:,7 $66(0%/('21::,17($66(0%/</,1(/ 1RWH3LQDVVHPEO\OLQH SRVLWLRQLQGLFDWHV/HDG)UHH,17(51$7,21$/ 5(&7,),(5 /2*2 $66(0%/< )6 3$57180%(5 '$7(&2'( <($5 :((. /,1(/ OR,17(51$7,21$/ 5(&7,),(5 /2*2 $66(0%/< )6 3$57180%(5 '$7(&2'( 3 '(6,*1$7(6/($')5(( 352'8&7237,21$/ <($5 :((. $ $66(0%/<6,7(&2'( 10 www.irf.com
IRL1404Z/S/L TO-262 Package Outline Dimensions are shown in millimeters (inches) IGBT 1- GATE 2- COLLECTOR 3- EMITTER TO-262 Part Marking Information (;$03/( 7,6,6$1,5// $66(0%/('21::,17($66(0%/</,1(& 1RWH3LQDVVHPEO\OLQH SRVLWLRQLQGLFDWHV/HDG)UHH OR,17(51$7,21$/ 5(&7,),(5 /2*2 $66(0%/< 3$57180%(5 '$7(&2'( <($5 :((. /,1(&,17(51$7,21$/ 5(&7,),(5 /2*2 $66(0%/< 3$57180%(5 '$7(&2'( 3 '(6,*1$7(6/($')5(( 352'8&7237,21$/ <($5 :((. $ $66(0%/<6,7(&2'( www.irf.com 11
IRL1404Z/S/L D 2 Pak Tape & Reel Information Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) 1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135) FEED DIRECTION TRL 1.85 (.073) 1.65 (.065) 10.90 (.429) 10.70 (.421) 11.60 (.457) 11.40 (.449) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) 4.72 (.136) 4.52 (.178) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 TO-220AB packages are not recommended for Surface Mount Application. Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q101] market. Qualification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 6/04 12 www.irf.com
Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/