Features l Logic Level l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 75 C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. Absolute Maximum Ratings HEXFET Power MOSFET V DSS = 55V R DS(on) = 8.0mΩ I D = 75A www.irf.com G TO-220AB IRL3705Z D S D 2 Pak IRL3705ZS IRL3705Z IRL3705ZS IRL3705ZL TO-262 IRL3705ZL Parameter Max. Units I D @ T C = 25 C Continuous Drain Current, V GS @ V (Silicon Limited) 86 I D @ T C = C Continuous Drain Current, V GS @ V 6 A I D @ T C = 25 C Continuous Drain Current, V GS @ V (Package Limited) 75 I DM Pulsed Drain Current c 340 P D @T C = 25 C Power Dissipation 30 W Linear Derating Factor 0.88 W/ C V GS Gate-to-Source Voltage ± 6 V E AS (Thermally limited) Single Pulse Avalanche Energyd 20 mj E AS (Tested ) Single Pulse Avalanche Energy Tested Value h 80 I AR Avalanche Currentc See Fig.2a, 2b, 5, 6 A E AR Repetitive Avalanche Energy g mj T J Operating Junction and -55 to + 75 T STG Storage Temperature Range C 300 (.6mm from case ) lbfyin (.Nym) Soldering Temperature, for seconds Mounting Torque, 6-32 or M3 screw i Thermal Resistance PD - 95854A Parameter Typ. Max. Units R θjc Junction-to-Case.4 C/W R θcs Case-to-Sink, Flat Greased Surface i 0.50 R θja Junction-to-Ambient i 62 R θja Junction-to-Ambient (PCB Mount) j 40 /06/06
IRL3705Z/S/L Electrical Characteristics @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 55 V V GS = 0V, I D = 250µA V (BR)DSS / T J Breakdown Voltage Temp. Coefficient 0.055 V/ C Reference to 25 C, I D = ma 6.5 8.0 V GS = V, I D = 52A e R DS(on) Static Drain-to-Source On-Resistance mω V GS = 5.0V, I D = 43A e 2 V GS = 4.5V, I D = 30A e V GS(th) Gate Threshold Voltage.0 3.0 V V DS = V GS, I D = 250µA gfs Forward Transconductance 50 V V DS = 25V, I D = 52A I DSS Drain-to-Source Leakage Current 20 µa V DS = 55V, V GS = 0V 250 V DS = 55V, V GS = 0V, T J = 25 C I GSS Gate-to-Source Forward Leakage 200 na V GS = 6V Gate-to-Source Reverse Leakage -200 V GS = -6V Q g Total Gate Charge 40 60 I D = 43A Q gs Gate-to-Source Charge 2 nc V DS = 44V Q gd Gate-to-Drain ("Miller") Charge 2 V GS = 5.0V e t d(on) Turn-On Delay Time 7 V DD = 28V t r Rise Time 240 ns I D = 43A t d(off) Turn-Off Delay Time 26 R G = 4.3 Ω t f Fall Time 83 V GS = 5.0V e L D Internal Drain Inductance 4.5 Between lead, D nh 6mm (0.25in.) G L S Internal Source Inductance 7.5 from package and center of die contact S C iss Input Capacitance 2880 V GS = 0V C oss Output Capacitance 420 V DS = 25V C rss Reverse Transfer Capacitance 220 pf C oss Output Capacitance 500 C oss Output Capacitance 330 C oss eff. Effective Output Capacitance 5 ƒ =.0MHz V GS = 0V, V DS =.0V, ƒ =.0MHz V GS = 0V, V DS = 44V, ƒ =.0MHz V GS = 0V, V DS = 0V to 44V f Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current 75 MOSFET symbol D (Body Diode) A showing the I SM Pulsed Source Current 340 integral reverse G (Body Diode)Ãc p-n junction diode. S V SD Diode Forward Voltage.3 V T J = 25 C, I S = 52A, V GS = 0V e t rr Reverse Recovery Time 6 24 ns T J = 25 C, I F = 43A, V DD = 28V Q rr Reverse Recovery Charge 7.4 nc di/dt = A/µs e t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com
I D, Drain-to-Source Current (Α) G fs, Forward Transconductance (S) I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) IRL3705Z/S/L 0 VGS TOP 2V V 8.0V 5.0V 4.5V 3.5V 3.0V BOTTOM 2.8V 0 VGS TOP 2V V 8.0V 5.0V 4.5V 3.5V 3.0V BOTTOM 2.8V 0. 2.8V 60µs PULSE WIDTH Tj = 25 C 0.0 0. 0 V DS, Drain-to-Source Voltage (V) 2.8V 60µs PULSE WIDTH Tj = 75 C 0. 0 V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics 0 20 T J = 75 C T J = 25 C 80 60 T J = 75 C T J = 25 C 40 0. V DS = 5V 60µs PULSE WIDTH 0 2 4 6 8 2 4 6 20 0 V DS = 8.0V 0 20 40 60 80 20 V GS, Gate-to-Source Voltage (V) I D,Drain-to-Source Current (A) Fig 3. Typical Transfer Characteristics Fig 4. Typical Forward Transconductance vs. Drain Current www.irf.com 3
I SD, Reverse Drain Current (A) I D, Drain-to-Source Current (A) C, Capacitance(pF) V GS, Gate-to-Source Voltage (V) IRL3705Z/S/L 000 V GS = 0V, f = MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd 6.0 5.0 I D = 52A V DS = 44V V DS = 28V V DS = V 00 4.0 C iss 3.0 0 C oss 2.0 C rss.0 0.0 0 20 30 40 V DS, Drain-to-Source Voltage (V) Q G Total Gate Charge (nc) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 0.00 0 OPERATION IN THIS AREA LIMITED BY R DS (on).00 T J = 75 C.00 T J = 25 C µsec V GS = 0V.00 0.0 0.5.0.5 2.0 V SD, Source-to-Drain Voltage (V) Tc = 25 C Tj = 75 C Single Pulse msec msec 0 V DS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com
I D, Drain Current (A) R DS(on), Drain-to-Source On Resistance (Normalized) IRL3705Z/S/L 90 80 Limited By Package 2.0 I D = 43A V GS = 5.0V 70 60 50 40 30 20 0 25 50 75 25 50 75 T C, Case Temperature ( C).5.0 0.5-60 -40-20 0 20 40 60 80 20 40 60 80 T J, Junction Temperature ( C) Fig 9. Maximum Drain Current vs. Case Temperature Fig. Normalized On-Resistance vs. Temperature D = 0.50 Thermal Response ( Z thjc ) 0. 0.0 0.00 0.20 0. 0.05 0.02 0.0 SINGLE PULSE ( THERMAL RESPONSE ) R R 2 R R 2 τ J τ J τ τ τ 2 τ 2 Ci= τi/ri Ci i/ri E-006 E-005 0.000 0.00 0.0 0. t, Rectangular Pulse Duration (sec) Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc + Tc Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Case Ri ( C/W) τi (sec) 0.543 0.000384 0.5985 0.002778 www.irf.com 5 τ C τ
V GS(th) Gate threshold Voltage (V) E AS, Single Pulse Avalanche Energy (mj) IRL3705Z/S/L V DS L 5V DRIVER 500 400 I D TOP 5.7A 8.5A BOTTOM 52A R G 20V V GS tp D.U.T IAS 0.0Ω + - V DD A 300 200 Fig 2a. Unclamped Inductive Test Circuit tp V (BR)DSS 0 25 50 75 25 50 75 Starting T J, Junction Temperature ( C) I AS Fig 2b. Unclamped Inductive Waveforms Q G Fig 2c. Maximum Avalanche Energy vs. Drain Current V Q GS Q GD 3.0 V G 2.5 Charge Fig 3a. Basic Gate Charge Waveform 2.0.5 I D = 250µA 0 K DUT L VCC.0 0.5-75 -50-25 0 25 50 75 25 50 75 200 T J, Temperature ( C ) Fig 3b. Gate Charge Test Circuit Fig 4. Threshold Voltage vs. Temperature 6 www.irf.com
E AR, Avalanche Energy (mj) Avalanche Current (A) IRL3705Z/S/L Duty Cycle = Single Pulse 0.0 0.05 0. Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25 C due to avalanche losses 0..0E-05.0E-04.0E-03.0E-02.0E-0 tav (sec) Fig 5. Typical Avalanche Current vs.pulsewidth 50 25 75 50 25 0 TOP Single Pulse BOTTOM % Duty Cycle I D = 52A 25 50 75 25 50 75 Starting T J, Junction Temperature ( C) Notes on Repetitive Avalanche Curves, Figures 5, 6: (For further info, see AN-5 at www.irf.com). Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long ast jmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 2a, 2b. 4. P D (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (.3 factor accounts for voltage increase during avalanche). 6. I av = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed T jmax (assumed as 25 C in Figure 5, 6). t av = Average time in avalanche. D = Duty cycle in avalanche = t av f Z thjc (D, t av ) = Transient thermal resistance, see figure ) P D (ave) = /2 (.3 BV I av ) = DT/ Z thjc Fig 6. Maximum Avalanche Energy I av = 2DT/ [.3 BV Z th ] vs. Temperature E AS (AR) = P D (ave) t av www.irf.com 7
IRL3705Z/S/L + - D.U.T + ƒ - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - + Reverse Recovery Current Driver Gate Drive Period P.W. D.U.T. I SD Waveform Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt D = P.W. Period V GS =V V DD * R G dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test V DD + - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% I SD * V GS = 5V for Logic Level Devices Fig 7. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET Power MOSFETs V DS R D R G V GS D.U.T. + - V DD V Pulse Width µs Duty Factor 0. % Fig 8a. Switching Time Test Circuit V DS 90% % V GS t d(on) t r t d(off) t f Fig 8b. Switching Time Waveforms 8 www.irf.com
IRL3705Z/S/L TO-220AB Package Outline Dimensions are shown in millimeters (inches) TO-220AB Part Marking Information (;$03/( 7+,6,6$,5) $66(0%/('2::,7+($66(0%/</,(& RWH3LQDVVHPEO\OLQHSRVLWLRQ LQGLFDWHV/HDG)UHH,7(5$7,2$/ 5(&7,),(5 /2*2 $66(0%/< 3$5780%(5 '$7(&2'( <($5 :((. /,(& www.irf.com 9
IRL3705Z/S/L D 2 Pak (TO-263AB) Package Outline Dimensions are shown in millimeters (inches) D 2 Pak (TO-263AB) Part Marking Information 7+,6,6$,5)6:,7+,7(5$7,2$/ $66(0%/('2::,7+($66(0%/</,(/ 5(&7,),(5 /2*2 $66(0%/< )6 3$5780%(5 '$7(&2'( <($5 :((. /,(/ 25,7(5$7,2$/ 5(&7,),(5 /2*2 $66(0%/< )6 3$5780%(5 '$7(&2'( 3 '(6,*$7(6/($')5(( 352'8&7237,2$/ <($5 :((. $ $66(0%/<6,7(&2'( www.irf.com
IRL3705Z/S/L TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information (;$03/( 7+,6,6$,5// $66(0%/('2::,7+($66(0%/</,(&,7(5$7,2$/ 5(&7,),(5 /2*2 $66(0%/< 3$5780%(5 '$7(&2'( <($5 :((. /,(& 25,7(5$7,2$/ 5(&7,),(5 /2*2 $66(0%/< 3$5780%(5 '$7(&2'( 3 '(6,*$7(6/($')5(( 352'8&7237,2$/ <($5 :((. $ $66(0%/<6,7(&2'( www.irf.com
IRL3705Z/S/L D 2 Pak Tape & Reel Information TRR.60 (.063).50 (.059) 4. (.6) 3.90 (.53).60 (.063).50 (.059) 0.368 (.045) 0.342 (.035) FEED DIRECTION TRL.85 (.073).65 (.065).90 (.429).70 (.42).60 (.457).40 (.449) 6. (.634) 5.90 (.626).75 (.069).25 (.049) 5.42 (.609) 5.22 (.60) 24.30 (.957) 23.90 (.94) 4.72 (.36) 4.52 (.78) FEED DIRECTION 3.50 (.532) 2.80 (.504) 27.40 (.079) 23.90 (.94) 4 330.00 (4.73) MAX. 60.00 (2.362) MIN. NOTES :. COMFORMS TO EIA-48. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (.039) 24.40 (.96) 3 30.40 (.97) MAX. 4 Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. ). Limited by T Jmax, starting T J = 25 C, L = 0.09mH R G = 25Ω, I AS = 52A, V GS =V. Part not recommended for use above this value. ƒ Pulse width.0ms; duty cycle 2%. C oss eff. is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. TO-220AB package is not recommended for Surface Mount Application. Limited by T Jmax, see Fig.2a, 2b, 5, 6 for typical repetitive avalanche performance. This value determined from sample failure population. % tested to this value in production. This is only applied to TO-220AB pakcage. ˆ This is applied to D 2 Pak, when mounted on " square PCB (FR- 4 or G- Material). For recommended footprint and soldering techniques refer to application note #AN-994. R θ is measured at T J of approximately 90 C. Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q]market. Qualification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (3) 252-75 TAC Fax: (3) 252-7903 Visit us at www.irf.com for sales contact information. /06 2 www.irf.com
Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/