GPS and GLONASS Front-End Module GENERAL DESCRIPTION The NJG117PCD is a front-end module (FEM) designed for GPS and GLONASS applications. The NJG117PCD offers high gain, low noise figure, high linearity and very high out-band rejection characteristics brought by included high performance pre- SAW filter, low noise amplifier (LNA) and post- SAW filter. The NJG117PCD can be operated from 1.V to 3.3V single voltage. The NJG117PCD offers very small mounting area by included two SAW filters, only two external components and very small HFFP1-CD package that is.x.mm. PACKAGE OUTLINE NJG117PCD FEATURES Available for GPS and GLONASS Low supply voltage 1./.V typ. Low current consumption./3.3ma typ. @V DD =1./.V, V CTL =1.V.1µA typ. @V DD =1./.V, V CTL =V (Stand-by mode) High gain 17./1.dB typ. @V DD =1./.V, V CTL =1.V, f=17mhz, 197~1MHz Low noise figure 1./1.dB typ. @V DD =1./.V, V CTL =1.V, f=17mhz 1.7/1.7dB typ. @V DD =1./.V, V CTL =1.V, f=197~1mhz @V DD =1./.V, V CTL =1.V, High out band rejection dbc typ. f=7~91mhz, relative to 17MHz 7dBc typ. f=171~19mhz, relative to 17MHz Small package size HFFP1-CD:.mmx.mmx.3mm max. RoHS compliant and Halogen Free, MSL1 PIN CONFIGURATION (Top View) BLOCK DIAGRAM 1 GND VCTL VDD 3 NC(GND) Post-Filter LNA Pre-Filter 1 PostOUT NC (GND) 9 LNAIN PreOUT 7 Pin connection 1. GND. VCTL 3. VDD. NC(GND). PreIN. GND 7. PreOUT. LNAIN 9. NC(GND) 1. PostOUT RF IN Pre-Filter V CTL LNA V DD Post-Filter RF OUT PreIN GND Exposed pad: GND TRUTH TABLE H =V CTL (H), L =V CTL (L) VCTL Mode H Active mode L Stand-by mode Note: Specifications and description listed in this datasheet are subject to change without notice. Ver.1--3-1 -
ABSOLUTE MAXIMUM RATINGS T a =+ C, Z s =Z l =Ω PARAMETERS SYMBOL CONDITIONS RATINGS UNITS Supply voltage V DD. V Control voltage V CTL. V Input power Power dissipation P IN (inband) P IN (outband) P D V DD =.V, f=17, 197~1MHz V DD =.V, f=~1, 171~MHz -layer FR PCB with through-hole (11.x11.mm), T j =1 C +1 dbm +7 dbm 1 mw Operating temperature T opr -~+ C Storage temperature T stg -~+1 C ELECTRICAL CHARACTERISTICS 1 (DC) (General conditions: T a =+ C) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Supply Voltage V DD 1. - 3.3 V Control Voltage (High) V CTL(H) 1. 1. 3.3 V Control Voltage (Low) V CTL(L).3 V Supply Current 1 Supply Current Supply Current 3 Supply Current I DD1 I DD I DD3 I DD RF OFF, V DD =.V, V CTL =1.V RF OFF, V DD =1.V, V CTL =1.V RF OFF, V DD =.V, V CTL =V RF OFF, V DD =1.V, V CTL =V - 3.3. ma -..9 ma -.1. µa -.1. µa Control Current I CTL V CTL =1.V -. 1. µa - -
ELECTRICAL CHARACTERISTICS (RF) General conditions: V DD =.V, V CTL= 1.V, f RF =17MHz, 197~1MHz, T a =+ C, Z s =Z l =Ω, with application circuit PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Small Signal Gain (GPS)1 Small Signal Gain (GLONASS)1 Noise Figure (GPS)1 Noise Figure (GLONASS)1 Input Power at 1dB Gain Compression Point 1 GainGPS1 GainGLN1 NFGPS1 NFGLN1 f=17mhz (GPS), Exclude PCB, Connector Losses (.19dB) f=197~1mhz (GLONASS) Exclude PCB, Connector Losses (.19dB) f=17mhz (GPS) Exclude PCB, Connector Losses (.9dB) f=197~1mhz (GLONASS) Exclude PCB, Connector Losses (.9dB) 17. 1. - db 17. 1. - db - 1..1 db - 1.7. db P-1dB(IN)1 f=17, 197~1MHz - -1. - dbm Input 3rd Order Intercept Point 1 IIP3_1 f1=17mhz, f=f1+/- 1MHz, Pin=-3dBm - -3. - dbm Out of Band Input nd Order Intercept Point 1 Out of Band Input 3rd Order Intercept Point 1 7MHz Harmonic1 Out-of-Band Input Power 1dB Compression 1 Low Band Rejection 1 High Band Rejection 1 WLAN Band Rejection 1 RF IN Return Loss (GPS)1 RF IN Return Loss (GLONASS)1 RF OUT Return Loss (GPS)1 RF OUT Return Loss (GLONASS)1 Group Delay Time Deviation 1 IIP_OB1 IIP3_OB1 fo1 P-1dB(IN) _OB1-1 P-1dB(IN) _OB1- BR_L1 BR_H1 BR_W1 f1=.mhz at +1dBm, f=mhz at +1dBm, fmeas=17.mhz f1=171.7mhz at +1dBm, f=1mhz at +1dBm, fmeas=17.mhz Input jammer tone: 77.7MHz at +1dBm Measure the harmonic tone at 17.MHz fjam=9mhz, fmeas=17mhz at Pin=-dBm fjam=171mhz, fmeas=17mhz at Pin=-dBm f=7~91mhz, relative to 17MHz f=171~19mhz, relative to 17MHz f=~mhz, relative to 17MHz - +7 - dbm - + - dbm - -3 - dbm - + - dbm - + - dbm - - dbc - 7 - dbc - 7 - dbc RLiGPS1 f=17mhz (GPS) - 7. - db RLiGLN1 f=197~1mhz (GLONASS) - 7. - db RLoGPS1 f=17mhz (GPS) - 11 - db RLoGLN1 f=197~1mhz (GLONASS) - 1 - db GDT1 f=197~1mhz (GLONASS) -. - ns - 3 -
ELECTRICAL CHARACTERISTICS 3 (RF) General conditions: V DD =1.V, V CTL =1.V, f RF =17MHz, 197~1MHz, T a =+ C, Z s =Z l =Ω, with application circuit PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Small Signal Gain (GPS) Small Signal Gain (GLONASS) Noise Figure (GPS) Noise Figure (GLONASS) Input Power at 1dB Gain Compression Point GainGPS GainGLN NFGPS NFGLN f=17mhz (GPS) Exclude PCB, Connector Losses (.19dB) f=197~1mhz (GLONASS) Exclude PCB, Connector Losses (.19dB) f=17mhz (GPS) Exclude PCB, Connector Losses (.9dB) f=197~1mhz (GLONASS) Exclude PCB, Connector Losses (.9dB) 1. 17. - db 1. 17. - db - 1.. db - 1.7.3 db P-1dB(IN) f=17, 197~1MHz - -17. - dbm Input 3rd Order Intercept Point IIP3_ f1=17mhz, f=f1+/- 1MHz, Pin=-3dBm - -. - dbm Out of Band Input nd Order Intercept Point Out of Band Input 3rd Order Intercept Point 7MHz Harmonic Out-of-Band Input Power 1dB Compression Low Band Rejection High Band Rejection WLAN Band Rejection RF IN Return Loss (GPS) RF IN Return Loss (GLONASS) RF OUT Return Loss (GPS) RF OUT Return Loss (GLONASS) Group Delay Time Deviation IIP_OB IIP3_OB fo P-1dB(IN)_ OB1- P-1dB(IN)_ OB- BR_L BR_H BR_W f1=.mhz at +1dBm, f=mhz at +1dBm, fmeas=17.mhz f1=171.7mhz at +1dBm, f=1mhz at +1dBm, fmeas=17.mhz Input jammer tone: 77.7MHz at +1dBm Measure the harmonic tone at 17.MHz fjam=9mhz, fmeas=17mhz at Pin=-dBm fjam=171mhz, fmeas=17mhz at Pin=-dBm f=7~91mhz, relative to 17MHz f=171~19mhz, relative to 17MHz f=~mhz, relative to 17MHz - +7 - dbm - + - dbm - -3 - dbm - + - dbm - + - dbm - - dbc - 7 - dbc - 7 - dbc RLiGPS f=17mhz (GPS) - 7. - db RLiGLN f=197~1mhz (GLONASS) - 7. - db RLoGPS f=17mhz (GPS) - 1 - db RLoGLN f=197~1mhz (GLONASS) - 13 - db GDT f=197~1mhz (GLONASS) -. - ns - -
TERMINAL INFORMATION No. SYMBOL DESCRIPTION 1 GND Ground terminal. This terminal should be connected to the ground plane as close as possible for excellent RF performance. VCTL Control voltage terminal. 3 VDD NC(GND) Supply voltage terminal. Please connect bypass capacitor C1 with ground as close as possible. No connected terminal. This terminal is not connected with internal circuit. Please connect to the PCB ground Plane. PreIN RF input terminal. This terminal connects to input of pre-saw filter. GND Ground terminal. This terminal should be connected to the ground plane as close as possible for excellent RF performance. 7 PreOUT Pre-SAW filter output terminal. This terminal connects to LNAIN with L1. LNAIN 9 NC(GND) 1 PostOUT Exposed Pad GND RF input terminal. This terminal requires only a matching inductor L1, and does not require DC blocking capacitor because of integrated capacitor. No connected terminal. This terminal is not connected with internal circuit. Please connect to the PCB ground Plane. RF output terminal. This terminal requires no DC blocking capacitor since this terminal has integrated SAW that also works as DC blocking capacitor in nature. Ground terminal. - -
ELECTRICAL CHARACTERISTICS Conditions: V DD =.V, V CTL =1.V, Ta= C, Z s =Z l =Ω, with application circuit S11, S S1, S1 VSWR Zin, Zout - -
ELECTRICAL CHARACTERISTICS Conditions: V DD =.V, V CTL =1.V, Ta= C, Z s =Z l =Ω, with application circuit NJG117PCD NF, Gain vs. frequency (VDD=.V, VCTL=1.V) S1 vs. Frequency (V DD =.V, V CTL =1.V) 1 Noise Figure (db) 3 1 Gain NF 1 1 Gain (db) S1 (db) -1 - -3 - - - (NF, Gain: Exclude PCB, Connector Losses) 1. 1. 1. 1. 1. 1. frequency (GHz) -7 -. 1. 1... 3. Frequency (GHz) Group Delay vs. frequency (VDD=.V, VCTL=1.V) Group Delay (ns) 3 1 1. 1. 1. 1. 1. 1. frequency (GHz) 1 Pout, IDD vs. Pin (VDD=.V, VCTL=1.V, frf=17mhz) 9 Pout, IM3 vs. Pin (VDD=.V, VCTL=1.V, f1=17mhz, f=17mhz) P-1dB(OUT)=+3.dBm OIP3=+1.7dBm Pout Pout (dbm) - -1-1 Pout IDD 7 IDD (ma) Pout, IM3 (dbm) - - - IM3-3 - P-1dB(IN)=-1.1dBm - - -3 - -1 1 Pin (dbm) IIP3=-.1dBm -1 - -3 - -1 1 Pin (dbm) - 7 -
ELECTRICAL CHARACTERISTICS Conditions: V DD =.V, V CTL =1.V, Ta= C, Z s =Z l =Ω, with application circuit Out-of-band P-1dB (fjam=9mhz) (VDD=.V, VCTL=1.V, f meas =17MHz at Pin=-dBm) Out-of-band P-1dB (fjam=171mhz) (VDD=.V, VCTL=1.V, f meas =17MHz at Pin=-dBm) Gain Gain 1 1 Gain (db) 1 1 1 Gain (db) 1 1 1 1 1 P-1dB(IN)_OB > +.dbm (Gain: Exclude PCB, Connector Losses) - -3 - -1 1 3 Pin at 9MHz (dbm) P-1dB(IN)_OB > +.dbm (Gain: Exclude PCB, Connector Losses) - -3 - -1 1 3 Pin at 171MHz (dbm) 1 Out-of-band IIP (V DD =.V, V CTL =1.V, f meas =17.MHz, f1=.mhz, f=mhz) Out-of-band IIP3 (VDD=.V, VCTL=1.V, fmeas=17.mhz, f1=171.7mhz, f=1mhz) Pout, IM (dbm) - - - Pout IM Pout, IM3 (dbm) - - - Pout IM3 - IIP_OB=+73.dBm -1 - - Pin (dbm) - IIP3_OB=+7.dBm -1 - - Pin (dbm) nd Harmonics (V DD =.V, V CTL =1.V, fin=77.7mhz, f meas =17.MHz) nd Harmonics(dBm) - - - - -1 fo=-3.7dbm -1-3 - -1 1 3 Pin(dBm) - -
ELECTRICAL CHARACTERISTICS Conditions: V DD =1.V, V CTL =1.V, Ta= C, Z s =Z l =Ω, with application circuit NJG117PCD S11, S S1, S1 VSWR Zin, Zout - 9 -
ELECTRICAL CHARACTERISTICS Conditions: V DD =1.V, V CTL =1.V, Ta= C, Z s =Z l =Ω, with application circuit NF, Gain vs. frequency (VDD=1.V, VCTL=1.V) 1 S1 vs. Frequency (V DD =1.V, V CTL =1.V) Noise Figure (db) 3 1 Gain NF 1 1 Gain (db) S1 (db) -1 - -3 - - - (NF, Gain: Exclude PCB, Connector Losses) 1. 1. 1. 1. 1. 1. frequency (GHz) -7 -. 1. 1... 3. Frequency (GHz) Group Delay vs. frequency (VDD=1.V, VCTL=1.V) Group Delay (ns) 3 1 1. 1. 1. 1. 1. 1. frequency (GHz) 1 Pout, IDD vs. Pin (VDD=1.V, VCTL=1.V, frf=17mhz) 9 Pout, IM3 vs. Pin (VDD=1.V, VCTL=1.V, f1=17mhz, f=17mhz) Pout (dbm) - -1-1 P-1dB(OUT)=-.7dBm Pout IDD 7 IDD (ma) Pout, IM3 (dbm) - - - OIP3=+11.dBm Pout IM3-3 P-1dB(IN)=-17.dBm - - -3 - -1 1 Pin (dbm) - IIP3=-.dBm -1 - -3 - -1 1 Pin (dbm) - 1 -
ELECTRICAL CHARACTERISTICS Conditions: V DD =1.V, V CTL =1.V, Ta= C, Z s =Z l =Ω, with application circuit Out-of-band P-1dB (fjam=9mhz) (VDD=1.V, VCTL=1.V, f meas =17MHz at Pin=-dBm) Out-of-band P-1dB (fjam=171mhz) (VDD=1.V, VCTL=1.V, f meas =17MHz at Pin=-dBm) Gain Gain 1 1 Gain (db) 1 1 1 Gain (db) 1 1 1 1 1 P-1dB(IN)_OB > +.dbm (Gain: Exclude PCB, Connector Losses) - -3 - -1 1 3 Pin at 9MHz (dbm) P-1dB(IN)_OB > +.dbm (Gain: Exclude PCB, Connector Losses) - -3 - -1 1 3 Pin at 171MHz (dbm) 1 Out-of-band IIP (V DD =1.V, V CTL =1.V, f meas =17.MHz, f1=.mhz, f=mhz) Out-of-band IIP3 (VDD=1.V, VCTL=1.V, fmeas=17.mhz, f1=171.7mhz, f=1mhz) Pout, IM (dbm) - - - Pout IM Pout, IM3 (dbm) - - - Pout IM3 - IIP_OB=+7.1dBm -1 - - Pin (dbm) - IIP3_OB=+.dBm -1 - - Pin (dbm) nd Harmonics (V DD =1.V, V CTL =1.V, fin=77.7mhz, f meas =17.MHz) nd Harmonics(dBm) - - - - -1 fo=-3.3dbm -1-3 - -1 1 3 Pin(dBm) - 11 -
ELECTRICAL CHARACTERISTICS Conditions: V DD =.V, V CTL =1.V, Z s =Z l =Ω, with application circuit Gain, NF vs. Temperature (VDD=.V, VCTL=1.V, frf=17mhz) 3. Return Loss vs. Temperature (VDD=.V, VCTL=1.V, frf=17mhz) Gain (db) 1 1 1 Gain NF 3. 1. 1 Noise Figure (db) Return Loss (db) 1 1 RLout RLin 1. (Gain, NF: Exclude PCB, Connector Losses) 1-1 Temperature ( o C) - 1 Temperature ( o C) Rejection (dbc) 1 9 7 Rejection vs. Temperature (VDD=.V, VCTL=1.V) 91MHz 19MHz MHz - 1 Temperature ( o C) Group Delay Time Deviation (nsec) 1 1 Group Delay Time Deviation vs. Temperature (VDD=.V, VCTL=1.V, frf=197~1mhz) - 1 Temperature ( o C) 7 IDD vs. Temperature (VDD=.V, VCTL=1.V/V, RF OFF) 1. IDD (ma) @active mode 3 1 IDD (active mode) IDD (stand-by mode) 1. 1.... IDD (ua) @stand-by mode - 1 Temperature ( o C) - 1 -
ELECTRICAL CHARACTERISTICS Conditions: V DD =.V, V CTL =1.V, Z s =Z l =Ω, with application circuit - P-1dB(IN) vs. Temperature (VDD=.V, VCTL=1.V, frf=17mhz) OIP3, IIP3 vs. Temperature (VDD=.V, VCTL=1.V, f1=17mhz, f=17mhz, Pin=-3dBm) -1 P-1dB(IN) (dbm) -1-1 -1-1 P-1dB(IN) OIP3 (dbm) 1 1 1 1 1 OIP3 IIP3 - - - IIP3 (dbm) - - 1 Temperature ( o C) - - 1 Temperature ( o C) Out-of-band IIP vs. Temperature (VDD=.V, VCTL=1.V, fmeas=17.mhz, f1=.mhz at Pin=+1dBm, f=mhz at Pin=+1dBm) Out-of-band IIP3 vs. Temperature (VDD=.V, VCTL=1.V, fmeas=17mhz, f1=1713mhz at Pin=+1dBm, f=11mhz at Pin=+1dBm) Out-of-band IIP (dbm) 7 IIP_OB Out-of-band IIP3 (dbm) 7 IIP3_OB 3-1 Temperature ( o C) 3-1 Temperature ( o C) nd Harmonics vs. Temperature (VDD=.V, VCTL=1.V, frf=77.7mhz) nd Harmonics (dbm) -1 - -3 - fo - - 1 Temperature ( o C) - 13 -
ELECTRICAL CHARACTERISTICS Conditions: V CTL =1.V, Ta= C, Z s =Z l =Ω, with application circuit Gain, NF vs. VDD (VCTL=1.V, frf=17mhz) 3 Return Loss vs. VDD (VCTL=1.V, frf=17mhz) Gain (db) 19 1 17 1 Gain NF. 1. 1 Noise Figure (db) Return Loss (db) 1 1 RLout RLin 1. (Gain, NF: Exclude PCB, Connector Losses) 1 1 1.. 3 3. VDD (V) 1 1.. 3 3. VDD (V) Rejection (dbc) 9 7 7 Rejection vs. VDD (VCTL=1.V) 91MHz 19MHz MHz 1 1.. 3 3. VDD (V) Group Delay Time Deviation (nsec) Group Delay Time Deviation vs. VDD (V DD =.V, V CTL =1.V, frf=197~1mhz) 1 1 1 1.. 3 3. VDD (V) IDD vs. VDD (VCTL=1.V/V, RF OFF). IDD (ma) @active mode 3 1 IDD (active mode) IDD (stand-by mode)...3..1 IDD (ua) @stand-by mode 1 1.. 3 3. VDD (V) - 1 -
ELECTRICAL CHARACTERISTICS Conditions: V CTL =1.V, Ta= C, Z s =Z l =Ω, with application circuit - P-1dB(IN) vs. VDD (VCTL=1.V, frf=17mhz) OIP3, IIP3 vs. VDD (VCTL=1.V, f1=17mhz, f=17mhz, Pin=-3dBm) -1 1 P-1dB(IN) (dbm) -1-1 -1-1 P-1dB(IN) OIP3 (dbm) 1 1 1 1 OIP3 IIP3 - - IIP3 (dbm) - - - 1 1.. 3 3. VDD (V) - 1 1.. 3 3. VDD (V) Out-of-band IIP vs. VDD (VCTL=1.V, fmeas=17.mhz, f1=.mhz at Pin=+1dBm, f=mhz at Pin=+1dBm) Out-of-band IIP3 vs. VDD (VCTL=1.V, fmeas=17mhz, f1=1713mhz at Pin=-dBm, f=11mhz at Pin=-dBm) Out-of-band IIP (dbm) 7 IIP_OB Out-of-band IIP3 (dbm) 7 IIP3_OB 3 1 1.. 3 3. VDD (V) 3 1 1.. 3 3. VDD (V) nd Harmonics vs. VDD (VCTL=1.V, frf=77.7mhz) nd Harmonics (dbm) -1 - -3 - fo - 1 1.. 3 3. VDD (V) - 1 -
APPLICATION CIRCUIT (Top View) 1 Post-Filter 1 RF OUT GND Post/OUT V CTL VCTL NC(GND) 9 V DD VDD 3 LNA LNAIN C1 1pF NC(GND) Pre/OUT RF IN Pre/IN Pre-Filter 7 GND L1.nH Parts list Parts ID L1 C1 Manufacture LQW1A Series (MURATA) GRM3 Series (MURATA) - 1 -
Evaluation board (Top View) V DD V CTL PCB Substrate: FR- Thickness:.mm Microstrip line width:.mm (Z =Ω) Size: 1.mm x 1.mm RF IN C1 RF OUT L1 <PCB LAYOUT GUIDELINE> PCB PKG Terminal PKG Outline GND Via Hole Diameter φ=.mm,.mm PRECAUTIONS Please layout ground pattern under this FEM in order not to couple with RFIN and RFOUT terminal. All external parts should be placed as close as possible to the FEM. For good RF performance, all GND terminals must be connected to PCB ground plane of substrate, and via-holes for GND should be placed near the FEM. - 17 -
RECOMMENDED FOOTPRINT PATTERN (HFFP1-CD PACKAGE) <Reference> : Land PKG :.mm x.mm :Mask (Open area) *Metal mask thickness : 1um :Resist(Open area) Metal MASK Detail - 1 -
NOISE FIGURE MEASUREMENT BLOCK DIAGRAM Measuring instruments NF Analyzer Noise Source Setting the NF analyzer Measurement mode form Device under test : Agilent N973A : Agilent 3A System downconverter : off Mode setup form Sideband : Amplifier : LSB Averages : 1 Average mode Bandwidth Loss comp Tcold : Point : MHz : off : setting the temperature of noise source (33.1K) NF Analyzer (Agilent N973A) Noise Source (Agilent 3A) Preamplifier NJG11UA Gain 1dB NF 1.dB * Preamplifier is used to improve NF Input (Ω) Noise Source Drive Output measurement accuracy. * Noise source, preamplifier and NF analyzer are connected directly. Calibration setup NF Analyzer (Agilent N973A) Noise Source (Agilent 3A) Preamplifier NJG11UA Gain 1dB NF 1.dB * Noise source, DUT, preamplifier IN DUT OUT Input (Ω) Noise Source Drive Output and NF analyzer are connected directly. Measurement Setup - 19 -
PACKAGE OUTLINE (HFFP1-CD) TOP VIEW SIDE VIEW BOTTOM VIEW Package Size :.±.1mm.3mm max. Electrode Dimensions clearance : ±.mm Stand-off :.1mm max. Exposed PAD Ground connection is required. Unit Substrate Terminal treat Lid Weight (typ.) : mm : Ceramic : Au : SnAg/Kovar/Ni : 1.mg Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. Do NOT eat or put into mouth. Do NOT dispose in fire or break up this product. Do NOT chemically make gas or powder with this product. To waste this product, please obey the relating law of your country. [CAUTION] The specifications on this databook are only given for information, without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights. This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these damages. This product is hollow seal package type, and it is with the structure susceptible to stress from the outside. Therefore, note the following in relation to the contents, after conducting an evaluation, please use. 1. After mounting this product, to implement the potting and transfer molding, please the confirmation of resistance to temperature changes and shrinkage stress involved in the molding.. When mounted on the product, collet diameter please use more than 1mmφ. In addition, the value of static load is recommended mounting less than N. 3. For dynamic load at the time of mounting, please use it after confirming in consideration of the contact area / speed / load. - -