INSULTED GTE BIPOLR TRNSISTOR WITH ULTRFST SOFT REOVERY DIODE Features Short circuit rated -µs @25, V GE = 5V Switching-loss rating includes all "tail" losses HEXFRED TM soft ultrafast diodes Optimized for medium operating frequency ( to khz) See Fig. for urrent vs. Frequency curve G E n-channel Description o-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, applications. These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability. bsolute Maximum Ratings Thermal Resistance PD - 9.44 IRGP2MD2 Short ircuit Rated Fast opack IGBT V ES = 6V V E(sat) 2.5V @V GE = 5V, I = 8. TO-247 Parameter Max. Units V ES ollector-to-emitter Voltage 6 V I @ T = 25 ontinuous ollector urrent 3 I @ T = ontinuous ollector urrent 8. I M Pulsed ollector urrent 26 I LM lamped Inductive Load urrent 26 I F @ T = Diode ontinuous Forward urrent 7. I FM Diode Maximum Forward urrent 6 t sc Short ircuit Withstand Time µs V GE Gate-to-Emitter Voltage ± 2 V P D @ T = 25 Maximum Power Dissipation 6 W P D @ T = Maximum Power Dissipation 24 T J Operating Junction and -55 to +5 T STG Storage Temperature Range Soldering Temperature, for sec. 3 (.63 in. (.6mm) from case) Mounting Torque, 6-32 or M3 Screw. lbf in (. N m) Parameter Min. Typ. Max. Units R θj Junction-to-ase - IGBT 2. R θj Junction-to-ase - Diode 3.5 /W R θs ase-to-sink, flat, greased surface.24 R θj Junction-to-mbient, typical socket mount 4 Wt Weight 6 (.2) g (oz) -38 Revision 2
Electrical haracteristics @ (unless otherwise specified) Parameter Min. Typ. Max. Units onditions V (BR)ES ollector-to-emitter Breakdown Voltage 6 V V GE = V, I = 25µ V (BR)ES/ T J Temp. oeff. of Breakdown Voltage.42 V/ V GE = V, I =.m V E(on) ollector-to-emitter Saturation Voltage 2. 2.5 I = 8. V GE = 5V 2.7 V I = 3 See Fig. 2, 5 2.5 I = 8., T J = 5 V GE(th) Gate Threshold Voltage 3. 5.5 V E = V GE, I = 25µ V GE(th) / T J Temperature oeff. of Threshold Voltage - mv/ V E = V GE, I = 25µ g fe Forward Transconductance 2.7 3.8 S V E = V, I = 8. I ES Zero Gate Voltage ollector urrent 25 µ V GE = V, V E = 6V 7 V GE = V, V E = 6V, T J = 5 V FM Diode Forward Voltage Drop.4.7 V I = 8. See Fig. 3.4.7 I = 8., T J = 5 I GES Gate-to-Emitter Leakage urrent ± n V GE = ±2V Switching haracteristics @ (unless otherwise specified) Parameter Min. Typ. Max. Units onditions Q g Total Gate harge (turn-on) 6 24 I = 8. Qge Gate - Emitter harge (turn-on) 3.6 5.2 n V = 4V Q gc Gate - ollector harge (turn-on) 6. 9. See Fig. 8 t d(on) Turn-On Delay Time 66 t r Rise Time 4 ns I = 8., V = 48V t d(off) Turn-Off Delay Time 33 54 V GE = 5V, R G = 5Ω t f Fall Time 26 48 Energy losses include "tail" and E on Turn-On Switching Loss.5 diode reverse recovery. E off Turn-Off Switching Loss. mj See Fig. 9,,, 8 E ts Total Switching Loss.5 2.5 t sc Short ircuit Withstand Time µs V = 36V, V GE = 5V, R G = 5Ω, V PK < 5V t d(on) Turn-On Delay Time 65 T J = 5, See Fig. 9,,, 8 t r Rise Time 46 ns I = 8., V = 48V t d(off) Turn-Off Delay Time 52 V GE = 5V, R G = 5Ω t f Fall Time 56 Energy losses include "tail" and E ts Total Switching Loss 2.3 mj diode reverse recovery. L E Internal Emitter Inductance 3 nh Measured 5mm from package ies Input apacitance 365 V GE = V oes Output apacitance 47 pf V = 3V See Fig. 7 res Reverse Transfer apacitance 4.8 ƒ =.MHz t rr Diode Reverse Recovery Time 37 55 ns See Fig. 55 9 4 I F = 8. I rr Diode Peak Reverse Recovery urrent 3.5 5. See Fig. 4.5 8. 5 V R = 2V Q rr Diode Reverse Recovery harge 65 38 n See Fig. 24 36 6 di/dt = 2/µs di (rec)m /dt Diode Peak Rate of Fall of Recovery 24 /µs See Fig. During t b 2 7 Notes: Repetitive rating; V GE =2V, pulse width limited by max. junction temperature. ( See fig. 2 ) V =8%(V ES ), V GE =2V, L=µH, R G = 5Ω, ( See fig. 9 ) Pulse width 8µs; duty factor.%. Pulse width 5.µs, single shot. -382
Load urrent () 8 6 4 6 % o f ra te d v o lta g e D u ty cycle : 5 % T J = 2 5 T s in k = 9 G a te drive a s sp ec ifie d Turn -on losses include e ffec ts of re ve rse re co ve ry Po we r D is sipation = 5W 2. f, Frequency (khz) Fig. - Typical Load urrent vs. Frequency (Load urrent = I RMS of fundamental) I, ollector-to-emitter urrent () T J = 5 V GE = 5V 2µs PULSE WIDTH V E, ollector-to-emitter Voltage (V) I, ollector-to-emitter urrent () T J = 5 V = V 5µs PULSE WIDTH 5 5 2 V GE, Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output haracteristics Fig. 3 - Typical Transfer haracteristics -383
Maximum D ollector urrent () 4 2 8 6 4 2 V GE = 5V V E, ollector-to-emitter Voltage (V) 5. 4. 3. 2.. V GE = 5V 8µs PULSE WIDTH I = 6 I = 8. I = 4. 25 5 75 25 5 T, ase Temperature ( ) Fig. 4 - Maximum ollector urrent vs. ase Temperature. -6-4 -2 2 4 6 8 2 4 6 T, ase Temperature ( ) Fig. 5 - ollector-to-emitter Voltage vs. ase Temperature Therm al Response (Z thj ). D =.5.2..5.2. SIN G LE P U LS E (TH ER M L R E SP O N SE ) 2. P eak T J = P D M x Z th J + T...... t, R ectangular Pulse Duration (sec) N otes :. D uty fac tor D = t / t 2 P D M t t 2 Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-ase -384
, apacitance (pf) 6 4 2 V GE = V, f = MHz ies = ge + gc, ce SHORTED res = gc oes = ce + gc ies oes res V GE, Gate-to-Emitter Voltage (V) 2 6 2 8 4 V E = 4V I = 8. V E, ollector-to-emitter Voltage (V) Fig. 7 - Typical apacitance vs. ollector-to-emitter Voltage 4 8 2 6 2 Q g, Total Gate harge (n) Fig. 8 - Typical Gate harge vs. Gate-to-Emitter Voltage Total Switching Losses (mj).64.62.6.58 V = 48V V GE = 5V T = 25 I = 8. Total Switching Losses (mj) R G = 5Ω V GE = 5V V = 48V I = 6 I = 8. I = 4..56 2 3 4 5 6 R G, Gate Resistance (Ω) W. -6-4 -2 2 4 6 8 2 4 6 T, ase Temperature ( ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. - Typical Switching Losses vs. ase Temperature -385
Total Switching Losses (mj) 6. 4. 2. R G = 5Ω T = 5 V = 48V V GE = 5V I, ollector-to-emitter urrent () V GE = 2V SFE OPERTING RE. 4 8 2 6 2 I, ollector-to-emitter urrent () Fig. - Typical Switching Losses vs. ollector-to-emitter urrent V E, ollector-to-emitter Voltage (V) Fig. 2 - Turn-Off SO Instantaneous Forward urrent - I F () T J = 5..4.8.2.6 2. 2.4 2.8 3.2 Forward Voltage Drop - V FM (V) Fig. 3 - Maximum Forward Voltage Drop vs. Instantaneous Forward urrent -386
8 V R = 2V V R = 2V I F = 6 t rr - (ns) 6 4 I F = 8. I IRRM - () I F = 8. I F = 6 2 I F = 4. I = 4. F di f /dt - (/µs) Fig. 4 - Typical Reverse Recovery vs. di f /dt di f /dt - (/µs) Fig. 5 - Typical Recovery urrent vs. di f /dt 5 4 V R = 2V V R = 2V Q RR - (n) 3 2 I F = 6 I F = 8. di(rec)m/dt - (/µs) I F = 4. I F = 8. I F = 6 I = 4. F di f /dt - (/µs) Fig. 6 - Typical Stored harge vs. di f /dt di f /dt - (/µs) Fig. 7 - Typical di (rec)m /dt vs. di f /dt -387
9% Vge Same type device as D.U.T. +Vge Vce 8% of Vce 43µF D.U.T. Ic % Vce Ic 9% Ic 5% Ic td(off) tf Fig. 8a - Test ircuit for Measurement of I LM, E on, E off(diode), t rr, Q rr, I rr, t d(on), t r, t d(off), t f t+5µs Eoff = Vce ic dt t t Fig. 8b - Test Waveforms for ircuit of Fig. 8a, Defining E off, t d(off), t f t2 % +Vg GTE VOLTGE D.U.T. +Vg Ic trr trr Qrr id dt = tx % Ic Vcc td(on) t Vce tr 9% Ic 5% Vce Ipk Ic t2 Eon = ie dt Vce t t2 DUT VOLTGE ND URRENT Vpk tx % Vcc Irr DIODE REVERSE REOVERY ENERGY % Irr DIODE REOVERY WVEFORMS t4 Erec Vd id dt = t3 Vcc Fig. 8c - Test Waveforms for ircuit of Fig. 8a, Defining E on, t d(on), t r Refer to Section D for the following: t3 Fig. 8d - Test Waveforms for ircuit of Fig. 8a, Defining E rec, t rr, Q rr, I rr t4 ppendix D: Section D - page D-6 Fig. 8e - Macro Waveforms for Test ircuit of Fig. 8a Fig. 9 - lamped Inductive Load Test ircuit Fig. 2 - Pulsed ollector urrent Test ircuit Package Outline 3 - JEDE Outline TO-247 Section D - page D-3-388
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