General Description BCD ITVS (Integrated Transient Voltage Suppression) devices are designed and built using BCD proprietary process technology. These devices integrate the various diodes, transistors and resistors into the BCD ITVS products. These diodes and transistors feature low parasitic resistance and the diodes also exhibit low capacitance. Using these devices, BCD is able to design voltage clamping products where low capacitance associated with low dynamic resistance is required. The BCD is a general purpose, high performance device suitable for protecting four high speed I/Os. These devices are assembled in DFN packages for operation at higher frequencies minimizing distortion to the lines being protected. The is available in the DFN-2.5 1.0-10 package. This package allows simple and optimal placement in existing high-speed PCB layouts. Features Clamping Voltage: 11.5V at 20A 100ns, TLP 10.5V at 6A 8μs/20μs IEC 61000-4-2: +24kV, -18kV (Air) IEC 61000-4-2: +20kV, -16kV (Contact) IEC 61000-4-5 (Lightning, 8μs/20μs): ±6A Input Capacitance From I/O to VSS: 0.5pF TLP Dynamic Resistance: 0.25Ω Monolithic Silicon Technology Applications DVI Ethernet Port: 10/100/1000 Mb/s HDMI 1.3, High Definition Multi Media IEEE 1394 to 3.2Gb/s MDDI PCI Express SATA /esata USB 2.0 to 480 MHz Pin Configuration DN Package (DFN-2.5 1.0-10) Pin 1 Mark 1 10 I/O1 I/O2 2 9 VSS 3 8 VSS I/O3 4 7 5 6 I/O4 Figure 1. Pin Configuration of (Top View) 1
Circuit Diagram Figure 2. Circuit Diagram of Ordering Information A - A Circuit Type Package DN: DFN-2.5 1.0-10 G1: Green TR: Tape & Reel 5.0: Fixed Output 5.0V Package Temperature Range Part Number Marking ID Packing Type DFN-2.5 1.0-10 -55 to 85 C DN-5.0TRG1 BGB Tape & Reel BCD Semiconductor's Pb-free products, as designated with "G1" suffix in the part number, are RoHS compliant and green. 2
Absolute Maximum Ratings (Note 1) Parameter Symbol Min Typ Max Unit Peak Pulse Current (tp 8μs/20μs) 8 A Peak Pulse Power (tp 8μs/20μs) 75 W Operating Voltage (DC) -0.5 6 V IEC61000-4-2 ESD (Air) -18 24 kv IEC61000-4-2 ESD (Contact) -16 20 kv 6 A IEC61000-4-5 (Lightning) 75 W Lead Temperature (Soldering, 10sec) T LEAD 260 ºC Operating Temperature -55 85 ºC Storage Temperature -55 150 ºC Note 1: Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to Absolute Maximum Ratings for extended periods may affect device reliability. Electrical Characteristics T A =25ºC, unless otherwise specified. Parameter Symbol Conditions Min Typ Max Unit Working Voltage, I/O to VSS -0.7 5.5 V Channel Leakage Current I R Operating Voltage 0.5 μa Reverse Breakdown Voltage V BR At 1mA 5.5 V Holding Voltage V H 5.5 V Clamping Voltage (Surge) (IEC61000-4-5) At 6A 10.5 V Trigger Voltage V TRIG 9.5 V ESD Clamping Voltage At 20A, TLP, 100ns 11.5 V Dynamic Reverse Resistance R DIFF-R 0.25 0.3 Ω Dynamic Forward Resistance R DIFF-F 0.25 Ω Channel Input Capacitance (I/O to VSS) C I/O V I/O =2.5V, V SS =0V, f=1mhz 0.5 0.65 pf 3
Typical Performance Characteristics T A =25 C, unless otherwise specified. 9.5 22 BV, Trigger Voltage, Holding Voltage (V) 9.0 8.5 8.0 7.5 7.0 6.5 6.0 5.5 5.0-60 -40-20 0 20 40 60 80 100 120 140 Temperature ( O C) BV V TRIG V H Current from I/O to VSS (A) 20 18 16 14 12 10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 9 10 11 12 Voltage from I/O to VSS (V) Figure 3. BV, Trigger Voltage, Holding Voltage vs. Temperature Figure 4. Current from I/O to VSS vs. Voltage from I/O to VSS 11 10 Clamping Voltage (V) 9 8 7 IEC 61000-4-5 (Lightning) 6 1 2 3 4 5 6 7 Current from I/O to VSS (8μs/20μs) (A) V CLAMPING =10.2V 2V/div Current Waveform, (Surge, 8x20 μs, I PP =5.9A) 2A/div Time 10μs/div Figure 5. Clamping Voltage vs. Current from I/O to VSS (8μs/20μs) Figure 6. Waveform of I/O to VSS (Positive) 4
Typical Performance Characteristics (Continued) T A =25 C, unless otherwise specified. 1.0 0.9 0.8 Input Capacitance (pf) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 f=1mhz, T A =25 O C 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Input Voltage (V) Figure 7. Input Capacitance vs. Input Voltage 5
Mechanical Dimensions DFN-2.5 1.0-10 Unit: mm(inch) M I N mm(inch) MAX 6
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