V N-Channel PowerTrench MOSFET General Description These N Channel Logic Level MOSFET have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. The MOSFET feature faster switching and lower gate charge than other MOSFET with comparable RDS(on) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features 3.5 A, V. February R DS(ON) =.Ω @ V GS = V R DS(ON) =.Ω @ V GS =.5V Optimized for use in switching DC/DC converters with PWM controllers Very fast switching Low gate charge. SO- D DD D DD DD Pin SO- G G S S GS S S 5 7 Q Q 3 Absolute Maximum Ratings TA=5 o C unless otherwise noted Symbol Parameter Ratings Units V DSS Drain-Source Voltage V V GSS Gate-Source Voltage ± V I D Drain Current Continuous (Note a) 3.5 A P D Pulsed Power Dissipation for Single Operation (Note a) (Note b). (Note c). T J, T STG Operating and Storage Junction Temperature Range -55 to +75 C Thermal Characteristics R θja Thermal Resistance, Junction-to-Ambient (Note a) 7 (steady state), 5 ( sec) C/W R θja Thermal Resistance, Junction-to-Ambient (Note c) 35 C/W R θjc Thermal Resistance, Junction-to-Case (Note ) C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 3 mm 5 units W Fairchild Semiconductor Corporation Rev B(W)
Electrical Characteristics T A = 5 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV DSS Drain Source Breakdown Voltage V GS = V, I D = 5 µa V BVDSS Breakdown Voltage Temperature I T J Coefficient D = 5 µa, Referenced to 5 C.5 mv/ C I DSS Zero Gate Voltage Drain Current V DS = V, V GS = V µa I GSSF Gate Body Leakage, Forward V GS = V, V DS = V na I GSSR Gate Body Leakage, Reverse V GS = V V DS = V na On Characteristics (Note ) V GS(th) Gate Threshold Voltage V DS = V GS, I D = 5 µa.5 3 V VGS(th) Gate Threshold Voltage T J Temperature Coefficient I D = 5 µa, Referenced to 5 C mv/ C R DS(on) Static Drain Source V GS = V, I D = 3.5 A 7 mω On Resistance V GS =.5V, I D =.5 A 3 V GS= V, I D =3.5A, T J=5 C 7 I D(on) On State Drain Current V GS = V, = V DS =3 V A g FS Forward Transconductance V DS = 5V, I D = 3.5 A. S Dynamic Characteristics C iss Input Capacitance V DS = 3 V, V GS = V, pf C oss Output Capacitance f =. MHz pf C rss Reverse Transfer Capacitance pf Switching Characteristics (Note ) t d(on) Turn On Delay Time V DD = 3 V, I D = A, 7 ns t r Turn On Rise Time V GS = V, R GEN = Ω.3. ns t d(off) Turn Off Delay Time 9 3 ns t f Turn Off Fall Time 3 ns Q g Total Gate Charge V DS = 3 V, I D = 3.5 A, 3 nc Q gs Gate Source Charge V GS = 5 V nc Q gd Gate Drain Charge.5 nc Drain Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain Source Diode Forward Current. A Drain Source Diode Forward V SD V GS = V, I S =. A (Note ).. V Voltage Notes:. R θja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θjc is guaranteed by design while R θca is determined by the user's board design. a) 7 /W when mounted on a.5in pad of oz copper b) 5 /W when mounted on a. in pad of oz copper c) 35 /W when mounted on a minimum pad. Scale : on letter size paper. Pulse Test: Pulse Width < 3µs, Duty Cycle <.% Rev B(W)
Typical Characteristics ID, DRAIN CURRENT (A V GS = V.V 5.V 5.5V.V 5 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE..... VGS =.V.5V 5.V.V V 3 5 VDS, DRAIN-SOURCE VOLTAGE (V). 3 9 5 ID, DRAIN CURRENT (A) Figure. On-Region Characteristics. Figure. On-Resistance Variation with Drain Current and Gate Voltage. R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE....... ID = 3.5A VGS = V -5-5 5 5 75 5 5 TJ, JUNCTION TEMPERATURE ( o C) R DS(ON), ON-RESISTANCE (OHM).5 ID =.75A. TA = 5 o C.5. TA = 5 o C.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation withtemperature. Figure. On-Resistance Variation with Gate-to-Source Voltage. I D, DRAIN CURRENT (A) VDS = 5V T A = -55 o C 5 o C 5 o C IS, REVERSE DRAIN CURRENT (A)... VGS = V TA = 5 o C 5 o C -55 o C.5 3 3.5.5 5 VGS, GATE TO SOURCE VOLTAGE (V)...... VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure. Body Diode Forward Voltage Variation with Source Current and Temperature. Rev B(W)
Typical Characteristics V GS, GATE-SOURCE VOLTAGE (V) ID = 3.5A VDS = V 3V V Qg, GATE CHARGE (nc) CAPACITANCE (pf) 5 3 C RSS COSS 5 5 5 3 CISS VDS, DRAIN TO SOURCE VOLTAGE (V) f = MHz VGS = V Figure 7. Gate Charge Characteristics. Figure. Capacitance Characteristics. 5 I D, DRAIN CURRENT (A). R DS(ON) LIMIT VGS = V R θja = 35 o C/W T A = 5 o C ms s DC s ms ms µs P(pk), PEAK TRANSIENT POWER (W) 3 RθJA = 35 C/W T A = 5 C.. VDS, DRAIN-SOURCE VOLTAGE (V)... t, TIME (sec) Figure 9. Maximum Safe Operating Area. Figure. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANC.. D =.5...5....... t, TIME (sec) R θja(t) = r(t) + R θja R θja = 35 C/W P(pk) t t TJ - TA = P * R θja(t) Duty Cycle, D = t / t Figure. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note c. Transient thermal response will change depending on the circuit board design. Rev B(W)
TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx Bottomless CoolFET CROSSVOLT DOME E CMOS TM EnSigna TM FACT FACT Quiet Series FAST DISCLAIMER LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms FASTr GlobalOptoisolator GTO HiSeC ISOPLANAR MICROWIRE OPTOLOGIC OPTOPLANAR PACMAN POP PowerTrench QFET QS QT Optoelectronics Quiet Series SILENT SWITCHER SMART START SuperSOT -3 SuperSOT - SuperSOT - SyncFET TinyLogic UHC VCX FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Formative or In Design First Production Full Production This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G