N-Channel 6-V (D-S), 75 C MOSFET, Logic Level SUD4N6-25L PRODUCT SUMMARY V DS (V) r DS(on) ( ) (A) a.22 @ V GS = V 3 6.25 @ V GS = 4.5 V 3 FEATURES TrenchFET Power MOSFET 75 C Maximum Junction Temperature % R g Tested Pb-free Available TO-252 D G Drain Connected to Tab G D S S Top View N-Channel MOSFET Ordering Information: SUD4N6-25L SUD4N6-25L E3 (Lead (Pb)-Free) ABSOLUTE MAXIMUM RATINGS (T C = 25 C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Gate-Source Voltage V GS 2 V T C = 25 C 3 Continuous Drain Current (T J = 75 C) b T C = C 3 Pulsed Drain Current M A Continuous Source Current (Diode Conduction) I S 34 Avalanche Current I AR 34 Repetitive Avalanche Energy (Duty Cycle %) L =. mh E AR 58 mj T C = 25 C 75 Maximum Power Dissipation T A = 25 C P D.4 b, 2.5 c W Operating Junction and Storage Temperature Range T J, T stg 55 to 75 C THERMAL RESISTANCE RATINGS Maximum Junction-to-Ambientto Parameter Symbol Limit Unit Free Air, FR4 Board Mount Free Air, Vertical Mount 6 R thja C/W Maximum Junction-to-Case R thjc 2. Notes: a. Package limited. b. Free air, vertical mount. c. Surface mounted on x FR4 Board, t sec. For SPICE model information via the Worldwide Web: http:///www/product/spice.htm Document Number: 7264 S-528 Rev. I, 2-Feb-5
SUD4N6-25L SPECIFICATIONS (T J = 25 C UNLESS OTHERWISE NOTED) Static Parameter Symbol Test Condition Min Typ a Max Unit Drain-Source Breakdown Voltage V (BR)DSS V GS = V, = 25 A 6 Gate Threshold Voltage V GS(th) V DS = V GS, = 25 A. 2. 3. V Gate-Body Leakage I GSS V DS = V, V GS = 2 V na V DS = 6 V, V GS = V Zero Gate Voltage Drain Current SS V DS = 6 V, V GS = V, T J = 25 C 5 A V DS = 6 V, V GS = V, T J = 75 C 5 On-State Drain Current b (on) V DS = 5 V, V GS = V 2 A V GS = V, = 2 A.22 V GS = V, = 2 A, T J = 25 C.43 Drain-Source On-State Resistance b r DS(on) V GS = V, = 2 A, T J = 75 C.53 V GS = 4.5 V, = 2 A.25 Forward Transconductance b g fs V DS = 5 V, = 2 A S Dynamic Input Capacitance C iss 8 Output Capacitance C oss V GS = V, V DS = 25 V, f = MHz 35 pf Reverse Transfer Capacitance C rss Total Gate Charge c Q g 4 6 Gate-Source Charge c Q gs V DS = 3 V, V GS = V, = 4 A 9 nc Gate-Drain Charge c Q gd DS, GS, D Gate Resistance R g 3.5 Turn-On Delay Time c t d(on) 2 Rise Time c t r VDD V = 3 V, R L =.9 9 2 Turn-Off Delay Time c t d(off) 2 A, V GEN = V, R g = 2.5 28 5 Fall Time c t f 7 5 ns Source-Drain Diode Ratings and Characteristics (T C = 25 C) Pulsed Current I SM 2 A Diode Forward Voltage V SD I F = 2 A, V GS = V..5 V Reverse Recovery Time t rr I F = 2 A, di/dt = A/ s 48 ns Notes: a. For design aid only; not subject to production testing. b. Pulse test; pulse width 3 s, duty cycle 2%. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 Document Number: 7264 S-528 Rev. I, 2-Feb-5
SUD4N6-25L TYPICAL CHARACTERISTICS (25 C UNLESS NOTED) Output Characteristics 6 V V GS =, 9, 8, 7 V 5 V 8 6 45 Transfer Characteristics 6 4 2 4 V 3 V 3 5 T C = 25 C 25 C 2 4 6 8 55 C 2 3 4 5 6 V DS Drain-to-Source Voltage (V) V GS Gate-to-Source Voltage (V) 7 Transconductance.4 On-Resistance vs. Drain Current 6 T C = 55 C Transconductance (S) g fs C Capacitance (pf) 5 25 C 4 25 C 3 2 2 24 36 48 6 Capacitance 3 25 2 5 C oss 5 C rss C iss Gate-to-Source Voltage (V) rds(on) On-Resistance ( Ω ) V GS.3.2.. 5 3 45 6 8 6 4 2 V GS = 4.5 V V DS = 3 V = 2 A Gate Charge V GS = V 2 3 4 5 6 2 3 4 5 V DS Drain-to-Source Voltage (V) Q g Total Gate Charge (nc) Document Number: 7264 S-528 Rev. I, 2-Feb-5 3
SUD4N6-25L TYPICAL CHARACTERISTICS (25 C UNLESS NOTED) 2.5 On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage V GS = V = 2 A 2. r DS(on) On-Resiistance (Normalized).5..5 Source Current (A) I S T J = 5 C T J = 25 C. 5 25 25 5 75 25 5 75 T J Junction Temperature ( C).3.6.9.2.5 V SD Source-to-Drain Voltage (V) 4 Document Number: 7264 S-528 Rev. I, 2-Feb-5
SUD4N6-25L THERMAL RATINGS 5 Drain Current vs. Case Temperature 2 Safe Operating Area 4 *r DS(on) Limited 3 2 T C = 25 C Single Pulse s ms ms ms dc, s 25 5 75 25 5 75 T C Case Temperature ( C).. V DS Drain-to-Source Voltage (V) *V GS minimum V GS at which r DS(on) is specified 2 Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance. Duty Cycle =.5.2..5.2 Single Pulse. 5 4 3 2 Square Wave Pulse Duration (sec) maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http:///ppg?7264. Document Number: 7264 S-528 Rev. I, 2-Feb-5 5
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