RGTH6TS65D 65V 3A Field Stop Trench IGBT Datasheet Outline V CES 65V TO-247N I C( C) 3A V CE(sat) (Typ.).6V P D 94W ()(2)(3) Features Inner Circuit ) Low Collector - Emitter Saturation Voltage (2) 2) High Speed Switching 3) Low Switching Loss & Soft Switching () * () Gate (2) Collector (3) Emitter 4) Built in Very Fast & Soft Recovery FRD * Built in FRD (RFN - Series) (3) 5) Pb - free Lead Plating ; RoHS Compliant Applications Packaging Specifications Packaging Tube PFC UPS Power Conditioner Type Reel Size (mm) - Tape Width (mm) - Basic Ordering Unit (pcs) 45 IH Packing code Marking C RGTH6TS65D Absolute Maximum Ratings (at T C = 25 C unless otherwise specified) Parameter Symbol Value Unit Collector - Emitter Voltage V CES 65 V Gate - Emitter Voltage V GES 3 V Collector Current T C = 25 C I C 58 A T C = C I C 3 A Pulsed Collector Current I CP * 2 A Diode Forward Current T C = 25 C I F 4 A T C = C I F 2 A Diode Pulsed Forward Current I FP * 2 A Power Dissipation T C = 25 C P D 94 W T C = C P D 97 W Operating Junction Temperature T j 4 to +75 C Storage Temperature T stg 55 to +75 C * Pulse width limited by T jmax. 25 ROHM Co., Ltd. All rights reserved. / 25. - Rev.C
RGTH6TS65D Thermal Resistance Parameter Symbol Values Min. Typ. Max. Unit Thermal Resistance IGBT Junction - Case R θ(j-c) - -.77 C/W Thermal Resistance Diode Junction - Case R θ(j-c) - - 2. C/W IGBT Electrical Characteristics (at T j = 25 C unless otherwise specified) Parameter Symbol Conditions Values Min. Typ. Max. Unit Collector - Emitter Breakdown Voltage BV CES I C = μa, V GE = V 65 - - V Collector Cut - off Current I CES V CE = 65V, V GE = V - - μa Gate - Emitter Leakage Current I GES V GE = 3V, V CE = V - - 2 na Gate - Emitter Threshold Voltage V GE(th) V CE = 5V, I C = 2.mA 4.5 5.5 6.5 V Collector - Emitter Saturation Voltage V CE(sat) I C = 3A, V GE = 5V T j = 25 C -.6 2. T j = 75 C - 2. - V 25 ROHM Co., Ltd. All rights reserved. 2/ 25. - Rev.C
RGTH6TS65D IGBT Electrical Characteristics (at T j = 25 C unless otherwise specified) Parameter Symbol Conditions Values Min. Typ. Max. Unit Input Capacitance C ies V CE = 3V - 67 - Output Capacitance C oes V GE = V - 66 - pf Reverse Transfer Capacitance C res f = MHz - 27 - Total Gate Charge Q g V CE = 3V - 58 - Gate - Emitter Charge Q ge I C = 3A - 5 - nc Gate - Collector Charge Q gc V GE = 5V - 2 - Turn - on Delay Time t d(on) I C = 3A, V CC = 4V - 27 - Rise Time t r V GE = 5V, R G = Ω - 4 - Turn - off Delay Time t d(off) T j = 25 C - 5 - ns Fall Time t f Inductive Load - 47 - Turn - on Delay Time t d(on) I C = 3A, V CC = 4V - 27 - Rise Time t r V GE = 5V, R G = Ω - 4 - Turn - off Delay Time t d(off) T j = 75 C - 2 - ns Fall Time t f Inductive Load - 59 - I C = 2A, V CC = 52V Reverse Bias Safe Operating Area RBSOA V P = 65V, V GE = 5V FULL SQUARE - R G = 6Ω, T j = 75 C 25 ROHM Co., Ltd. All rights reserved. 3/ 25. - Rev.C
RGTH6TS65D FRD Electrical Characteristics (at T j = 25 C unless otherwise specified) Parameter Symbol Conditions I F = 2A Values Min. Typ. Max. Unit Diode Forward Voltage V F T j = 25 C -.35.8 V T j = 75 C -.5 - Diode Reverse Recovery Time t rr - 58 - I F = 2A ns Diode Peak Reverse Recovery Current I rr V CC = 4V di F /dt = 2A/μs - 6.5 - A Diode Reverse Recovery Charge Q rr T j = 25 C -.2 - μc Diode Reverse Recovery Time t rr - 236 - ns I F = 2A Diode Peak Reverse Recovery Current I rr V CC = 4V di F /dt = 2A/μs -.7 - A Diode Reverse Recovery Charge Q rr T j = 75 C -.36 - μc 25 ROHM Co., Ltd. All rights reserved. 4/ 25. - Rev.C
RGTH6TS65D Electrical Characteristic Curves Fig. Power Dissipation vs. Case Temperature Fig.2 Collector Current vs. Case Temperature 22 7 Power Dissipation : P D [W] 2 8 6 4 2 8 6 4 2 6 5 4 3 2 T j 75ºC V GE 5V 25 5 75 25 5 75 25 5 75 25 5 75 Case Temperature : Tc [ºC] Case Temperature : Tc [ºC] Fig.3 Forward Bias Safe Operating Area 6 Fig.4 Reverse Bias Safe Operating Area.. T C = 25ºC Single Pulse µs µs 4 2 8 6 4 2 T j 75ºC V GE =5V 2 4 6 8 Collector To Emitter Voltage : V CE [V] Collector To Emitter Voltage : V CE [V] 25 ROHM Co., Ltd. All rights reserved. 5/ 25. - Rev.C
RGTH6TS65D Electrical Characteristic Curves Fig.5 Typical Output Characteristics Fig.6 Typical Output Characteristics 2 8 6 4 2 T j = 25ºC V GE = 2V V GE = 5V V GE = 2V V GE = V V GE = 8V 2 8 6 4 2 T j = 75ºC V GE = 2V V GE = 5V V GE = 2V V GE = V V GE = 8V 2 3 4 5 2 3 4 5 Collector To Emitter Voltage : V CE [V] Collector To Emitter Voltage : V CE [V] Fig.7 Typical Transfer Characteristics 6 V CE = V 5 4 3 2 T j = 75ºC T j = 25ºC 2 4 6 8 2 Gate To Emitter Voltage : V GE [V] Fig.8 Typical Collector To Emitter Saturation Voltage vs. Junction Temperature Collector To Emitter Saturation Voltage : V CE(sat) [V] 4 3 2 V GE = 5V I C = 6A I C = 3A I C = 5A 25 5 75 25 5 75 Junction Temperature : T j [ºC] 25 ROHM Co., Ltd. All rights reserved. 6/ 25. - Rev.C
RGTH6TS65D Electrical Characteristic Curves Fig.9 Typical Collector To Emitter Saturation Voltage vs. Gate To Emitter Voltage Collector To Emitter Saturation Voltage : V CE(sat) [V] 2 5 5 I C = 6A I C = 3A I C = 5A T j = 25ºC 5 5 2 Fig. Typical Collector To Emitter Saturation Voltage vs. Gate To Emitter Voltage Collector To Emitter Saturation Voltage : V CE(sat) [V] 2 5 5 I C = 6A I C = 3A I C = 5A T j = 75ºC 5 5 2 Gate To Emitter Voltage : V GE [V] Gate To Emitter Voltage : V GE [V] Fig. Typical Switching Time vs. Collector Current V CC =4V, V GE =5V R G =Ω, T j =75ºC Fig.2 Typical Switching Time vs. Gate Resistance Switching Time [ns] t d(off) t f Switching Time [ns] t d(off) t r t f t d(on) t r 2 3 4 5 6 t d(on) V CC =4V, I C =3A V GE =5V, T j =75ºC 2 3 4 5 Gate Resistance : R G [Ω] 25 ROHM Co., Ltd. All rights reserved. 7/ 25. - Rev.C
RGTH6TS65D Electrical Characteristic Curves Fig.3 Typical Switching Energy Losses vs. Collector Current Fig.4 Typical Switching Energy Losses vs. Gate Resistance Switching Energy Losses [mj].. E off E on V CC =4V, V GE =5V R G =Ω, T j =75ºC 2 3 4 5 6 Switching Energy Losses [mj].. E off E on V CC =4V, I C =3A V GE =5V, T j =75ºC 2 3 4 5 Gate Resistance : R G [Ω] Fig.5 Typical Capacitance vs. Collector To Emitter Voltage 5 Fig.6 Typical Gate Charge Capacitance [pf] Cies Coes Cres f=mhz V GE =V T j =25ºC.. Gate To Emitter Voltage : V GE [V] 5 V CC =3V I C =3A T j =25ºC 2 3 4 5 6 Collector To Emitter Voltage : V CE [V] Gate Charge : Q g [nc] 25 ROHM Co., Ltd. All rights reserved. 8/ 25. - Rev.C
RGTH6TS65D Electrical Characteristic Curves Forward Current : I F [A] Fig.7 Typical Diode Forward Current vs. Forward Voltage 2 8 6 4 2 T j = 75ºC T j = 25ºC Fig.8 Typical Diode Reverse Recovery Time vs. Forward Current Reverse Recovery Time : t rr [ns] 4 3 2 V CC =4V di F /dt=2a/µs T j = 75ºC T j = 25ºC.5.5 2 2.5 3 2 3 4 5 Forward Voltage : V F [V] Forward Current : I F [A] Fig.9 Typical Diode Reverse Recovery Current vs. Forward Current Reverse Recovery Current : I rr [A] 2 5 5 T j = 75ºC T j = 25ºC V CC =4V di F /dt=2a/µs 2 3 4 5 Forward Current : I F [A] Reverse Recovery Charge : Q rr [µc] Fig.2 Typical Diode Reverse Recovery Charge vs. Forward Current 2.5 2.5.5 V CC =4V di F /dt=2a/µs T j = 75ºC T j = 25ºC 2 3 4 5 Forward Current : I F [A] 25 ROHM Co., Ltd. All rights reserved. 9/ 25. - Rev.C
RGTH6TS65D Electrical Characteristic Curves Fig.2 IGBT Transient Thermal Impedance Transient Thermal Impedance : Z thjc [ºC/W]...2.5.2 D=.5. Single Pulse..... P DM t t2 Duty=t/t2 Peak T j =P DM Z thjc T C Pulse Width : t[s] Fig.22 Diode Transient Thermal Impedance Transient Thermal Impedance : Z thjc [ºC/W]...5 D=.5.2 Single Pulse..2 P DM t t2 Duty=t/t2 Peak T j =P DM Z thjc T C..... Pulse Width : t[s] 25 ROHM Co., Ltd. All rights reserved. / 25. - Rev.C
RGTH6TS65D Inductive Load Switching Circuit and Waveform Gate Drive Time D.U.T. 9% D.U.T. V GE % VG 9% Fig.23 Inductive Load Circuit I C % t d(on) t r t d(off) t f t on t off I F t rr, Q rr di F /dt V CE I rr V CE(sat) Fig.25 Diode Reverce Recovery Waveform Fig.24 Inductive Load Waveform 25 ROHM Co., Ltd. All rights reserved. / 25. - Rev.C
Notice Notes ) 2) 3) 4) 5) 6) 7) 8) 9) ) ) 2) The information contained herein is subject to change without notice. Before you use our Products, please contact our sales representative and verify the latest specifications : Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. The Products specified in this document are not designed to be radiation tolerant. For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 3) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http:///contact/ 25 ROHM Co., Ltd. All rights reserved. R2B
Datasheet RGTH6TS65D - Web Page Distribution Inventory Part Number RGTH6TS65D Package TO-247N Unit Quantity 45 Minimum Package Quantity 45 Packing Type Bulk Constitution Materials List inquiry RoHS Yes