VS-SPbF Series Thyristor High Voltage Surface Mount Phase Control SCR, 0 2 TO-263 (D 2 PK) 3 2, node Cathode 3 Gate PRODUCT SUMMRY Package TO-263 (D 2 PK) Diode variation Single SCR I T(V) 6.5 V DRM /V RRM 800 V V TM <.5 V I GT 5 m T J -0 to +25 C FETURES Meets MSL level, per J-STD-020, LF maximum peak of 260 C Designed and qualified according JEDEC -JESD 7 Material categorization: for definitions of compliance please see www.vishay.com/doc?9992 PPLICTIONS Input rectification (soft start) Vishay input diodes, switches and output rectifiers which are available in identical package outlines DESCRIPTION The VS-SPbF high voltage series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 25 C junction temperature. OUTPUT CURRENT IN TYPICL PPLICTIONS PPLICTIONS SINGLE-PHSE RIDGE THREE-PHSE RIDGE UNITS NEM FR- or G-0 glass fabric-based epoxy with oz. (0 μm) copper 2.5 3.5 luminum IMS, R thc = 5 C/W 6.3 9.5 luminum IMS with heatsink, R thc = 5 C/W.0 8.5 Note T = 55 C, T J = 25 C, footprint 300 mm 2 MJOR RTINGS ND CHRCTERISTICS PRMETER TEST CONDITIONS VLUES UNITS I T(V) Sinusoidal waveform 6.5 I RMS 0 V RRM /V DRM 800 V I TSM 0 V T 6.5, T J = 25 C.5 V dv/dt 50 V/μs di/dt 00 /μs T J Range -0 to +25 C VOLTGE RTINGS PRT NUMER V RRM, MXIMUM PEK REVERSE VOLTGE V V DRM, MXIMUM PEK DIRECT VOLTGE V I RRM /I DRM T 25 C m VS-SPbF 800 800.0 Revision: 08-Jul-5 Document Number: 9562 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIED HEREIN ND THIS DOCUMENT RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?9000
VS-SPbF Series SOLUTE MXIMUM RTINGS PRMETER SYMOL TEST CONDITIONS VLUES UNITS Maximum average on-state current I T(V) 6.5 T C = 2 C, 80 conduction half sine wave Maximum RMS on-state current I T(RMS) 0 Maximum peak, one-cycle, 0 ms sine pulse, rated V RRM applied, T J = 25 C 95 I TSM non-repetitive surge current 0 ms sine pulse, no voltage reapplied, T J = 25 C 0 0 ms sine pulse, rated V RRM applied, T J = 25 C 5 Maximum I 2 t for fusing I 2 t 0 ms sine pulse, no voltage reapplied, T J = 25 C 6 2 s Maximum I 2 t for fusing I 2 t t = 0. ms to 0 ms, no voltage reapplied, T J = 25 C 60 2 s Maximum on-state voltage drop V TM 6.5, T J = 25 C.5 V On-state slope resistance r t 7.3 m T J = 25 C Threshold voltage V T(TO) 0.85 V T J = 25 C 0.05 Maximum reverse and direct leakage current I RM /I DM V R = Rated V RRM /V DRM T J = 25 C.0 node supply = 6 V, resistive load, initial I T =, m Typical holding current I H 30 T J = 25 C Maximum latching current I L node supply = 6 V, resistive load, T J = 25 C 50 Maximum rate of rise of off-state voltage dv/dt T J = T J max., linear to 80 %, V DRM = R g - k = Open V/μs Maximum rate of rise of turned-on current di/dt 00 /μs TRIGGERING PRMETER SYMOL TEST CONDITIONS VLUES UNITS Maximum peak gate power P GM 8.0 Maximum average gate power P G(V) 2.0 W Maximum peak positive gate current +I GM.5 Maximum peak negative gate voltage -V GM 0 V node supply = 6 V, resistive load, T J = 25 C 5 m node supply = 6 V, resistive load, T J = - 65 C 20 node supply = 6 V, resistive load, T J = 25 C 0 V GT Maximum required DC gate voltage to trigger node supply = 6 V, resistive load, T J = 25 C node supply = 6 V, resistive load, T J = 25 C 0.7 V node supply = 6 V, resistive load, T J = - 65 C.2 Maximum DC gate voltage not to trigger V GD 0.2 T J = 25 C, V DRM = Rated value Maximum DC gate current not to trigger I GD 0. m SWITCHING PRMETER SYMOL TEST CONDITIONS VLUES UNITS Typical turn-on time t gt T J = 25 C 0.8 Typical reverse recovery time t rr 3 μs T J = 25 C Typical turn-off time t q 00 Revision: 08-Jul-5 2 Document Number: 9562 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIED HEREIN ND THIS DOCUMENT RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?9000
VS-SPbF Series THERML - MECHNICL SPECIFICTIONS PRMETER SYMOL TEST CONDITIONS VLUES UNITS Maximum junction and storage T J, T Stg -0 to +25 temperature range C Soldering temperature T S For 0 s (.6 mm from case) 260 Maximum thermal resistance, R thjc DC operation.5 junction to case C/W Typical thermal resistance, R () thj 0 junction to ambient (PC mount) 2 g pproximate weight 0.07 oz. Marking device Case style D 2 PK (SMD-220) S Note () When mounted on " square (650 mm 2 ) PC of FR- or G-0 material oz. (0 μm) copper 0 C/W For recommended footprint and soldering techniques refer to application note #N-99 Maximum llowable Case Temperature ( C) 25 R thjc (DC) =.5 K/W 20 Conduction ngle 5 0 20 80 05 0 2 3 5 6 7 verage On-state Current () Fig. - Current Rating Characteristics Maximum verage On-state Power Loss (W) 8 7 6 5 3 2 80 20 RMS Limit Conduction ngle T = 25 C J 0 0 2 3 5 6 7 verage On-state Current () Fig. 3 - On-State Power Loss Characteristics Maximum llowable Case Temperature ( C) 25 20 5 R thjc (DC) =.5 K/W Conduction Period 0 20 80 DC 05 0 2 6 8 0 2 Maximum verage On-state Power Loss (W) 2 0 8 6 2 DC 80 20 RMS Limit Conduction Period T = 25 C J 0 0 2 6 8 0 2 verage On-state Current () verage On-state Current () Fig. 2 - Current Rating Characteristics Fig. - On-State Power Loss Characteristics Revision: 08-Jul-5 3 Document Number: 9562 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIED HEREIN ND THIS DOCUMENT RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?9000
VS-SPbF Series Peak Half Sine Wave Forward Current () 0 00 90 80 70 60 t any rated load condition and with rated V rrm applied following surge. Initial Tj = 50 C at 60 Hz 0.0083 s at 50 Hz 0.000 s Peak Half Sine Wave Forward Current () 20 0 00 90 80 70 60 Maximum non-repetitive surge current versus pulse train duration. Initial Tj = Tj max. No voltage reapplied Rated Vrrm reapplied 50 VS- 50 VS- 0 0 00 Number of Equal mplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current 0 0.0 0. 0 Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current 000 Instantaneous On-state Current () 00 0 T = 25 C J T = 25 C J 0.5.5 2 2.5 3 3.5 Instantaneous On-state Voltage (V) Fig. 7 - On-State Voltage Drop Characteristics 0 Transient Thermal Impedance Z thjc ( C/W) 0. D = 0.50 D = 0.33 D = 0.25 D = 0.7 D = 0.08 Single Pulse 0.0 0.000 0.00 0.0 0. Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance Z thjc Characteristics Steady State Value (DC Operation) Revision: 08-Jul-5 Document Number: 9562 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIED HEREIN ND THIS DOCUMENT RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?9000
VS-SPbF Series ORDERING INFORMTION TLE Device code VS- 0 T T S 08 S TRL PbF 2 3 5 6 7 8 9 - product 2 - Current rating, RMS value 3 - Circuit configuration: T = single thyristor - Package: 5 - T = TO-220C Type of silicon: S = converter grade 6 - Voltage code x 00 = V RRM 7 - S = TO-220 D 2 PK (SMD-220) version 8 - Tape and reel option: TRL = tape and reel (left oriented) TRR = tape and reel (right oriented) 9 - PbF = lead (Pb)-free ORDERING INFORMTION (Example) PREFERRED P/N QUNTITY PER T/R MINIMUM ORDER QUNTITY PCKGING DESCRIPTION VS-SPbF 50 000 ntistatic plastic tubes VS-STRRPbF 800 800 3" diameter reel VS-STRLPbF 800 800 3" diameter reel LINKS TO RELTED DOCUMENTS Dimensions Part marking information Packaging information www.vishay.com/doc?9506 www.vishay.com/doc?9505 www.vishay.com/doc?95032 Revision: 08-Jul-5 5 Document Number: 9562 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIED HEREIN ND THIS DOCUMENT RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?9000
DIMENSIONS in millimeters and inches D 2 PK Outline Dimensions Conforms to JEDEC outline D 2 PK (SMD-220) (3) L (2)(3) E c2 (E) (D) (3) Pad layout.00 (0.3) 9.65 (0.38) D L2 2 x e 2 3 H (2) 2 x b2 2 x b C Detail 0.00 M M c ± 0.00 M E View - H (3) 7.90 (0.70) 5.00 (0.625) 2.32 (0.08) Plating 2.6 (0.03) 2. (0.096) () b, b3 3.8 (0.5) ase Metal Gauge plane Lead tip 0 to 8 L3 L L Detail Rotated 90 CW Scale: 8: Seating plane (c) (b, b2) Section - and C - C Scale: None c () SYMOL MILLIMETERS INCHES MILLIMETERS INCHES NOTES SYMOL MX. MX. MX. MX. NOTES.06.83 0.60 0.90 D 6.86 8.00 0.270 0.35 3 0.00 0.25 0.000 0.00 E 9.65 0.67 0.380 0.20 2, 3 b 0.5 0.99 0.020 0.039 E 7.90 8.80 0.3 0.36 3 b 0.5 0.89 0.020 0.035 e 2.5 SC 0.00 SC b2..78 0.05 0.070 H.6 5.88 0.575 0.625 b3..73 0.05 0.068 L.78 2.79 0.070 0.0 c 0.38 0.7 0.05 0.029 L -.65-0.066 3 c 0.38 0.58 0.05 0.023 L2.27.78 0.050 0.070 c2..65 0.05 0.065 L3 0.25 SC 0.00 SC D 8.5 9.65 0.335 0.380 2 L.78 5.28 0.88 0.208 Notes () Dimensioning and tolerancing per SME Y.5 M-99 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.27 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L, D and E () Dimension b and c apply to base metal only (5) Datum and to be determined at datum plane H (6) Controlling dimension: inch (7) Outline conforms to JEDEC outline TO-263 Revision: 08-Jul-5 Document Number: 9506 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIED HEREIN ND THIS DOCUMENT RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?9000
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