Ordering number : EN066F SD1 Bipolar Transistor 1V, 0.A, Low VCE(sat), NPN Single SPA http://onsemi.com Specifications Absolute Maximum Ratings at Ta= C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 0 V Collector-to-Emitter Voltage VCEO 1 V Emitter-to-Base Voltage VEBO V Collector Current IC 0. A Collector Current (Pulse) ICP 1. A Collector Dissipation PC 0 mw Junction Temperature Tj 1 C Storage Temperature Tstg -- to +1 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 4-004 0.4 0. 4.0 0.6 1.8.0. 0.4 0.4 1.0 SD1G-SPA SD1G-SPA-AC SD1F-SPA SD1F-SPA-AC Product & Package Information Package : SPA JEITA, JEDEC : SC- Minimum Packing Quantity :,00 pcs./box, 00pcs./bag Marking Rank D1 LOT No. Electrical Connection 1 1 0. 1..0.8 1. 0. 1 : Emitter : Collector : Base SPA Semiconductor Components Industries, LLC, 01 September, 01 O41 TKIM/9TN (KT)/998HA (KT)/111MY/18KI, TS No.066-1/
SD1 Electrical Characteristics at Ta= C Parameter Symbol Conditions Ratings min typ max Unit Collector Cutoff Current ICBO VCB=1V, IE=0A 1.0 μa Emitter Cutoff Current IEBO VEB=4V, IC=0A 1.0 μa DC Current Gain hfe1 VCE=V, IC=0mA 160* 960* hfe VCE=V, IC=00mA Pulse 80 Gain-Bandwidth Product ft VCE=V, IC=0mA 0 MHz Common Base Output Capacitance Cob VCB=V, f=1mhz 8 pf Collector-to-Emitter Saturation Voltage VCE(sat)1 IC=mA, IB=0.mA mv VCE(sat) IC=mA, IB=mA 0 80 mv Base-to-Emitter Saturation Voltage VBE(sat) IC=mA, IB=mA 0.8 1. V Collector-to-Base Breakdown Voltage V(BR)CBO IC=μA, IE=0A 0 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=1mA, RBE= 1 V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=μA, IC=0A V * : The SD1 is classified by 0mA hfe as follows : Rank F G H hfe 160 to 0 80 to 60 480 to 960 Ordering Information Device Package Shipping memo SD1G-SPA SPA 00pcs./bag SD1G-SPA-AC SPA-WA,00pcs./box SD1F-SPA SPA 00pcs./bag Pb Free SD1F-SPA-AC SPA-WA,00pcs./box No.066-/
SD1 Collector Current, I C -- ma Gain-Bandwidth Product, f T -- MHz 800 00 600 00 400 00 00 0mA IC -- VCE ma 6mA 4mA ma 1mA I 0 B =0mA 0 0.1 0. 0. 0.4 0. Collector-to-Emitter Voltage, V CE -- V ITR0884 ft -- IC 0 VCE=V Base Current, I B -- μa DC Current Gain, h FE IB -- VBE VCE=V 80 60 40 0 0 0 0. 0.4 0.6 0.8 1.0 Base-to-Emitter Voltage, V BE -- V ITR088 hfe -- IC 0 VCE=V Output Capacitance, Cob -- pf 1.0 Collector Current, I C -- ma ITR0886 Cob -- VCB f=1mhz Collector-to-Emitter Saturation Voltage, V CE (sat) -- mv 1.0 0 Collector Current, I C -- ma ITR088 00 VCE(sat) -- IC I C / I B = 0 Collector Current, I C -- A 1.0 Collector-to-Base Voltage, V CB -- V A S O I CP =1.A 1.0 I C =0.A 0.1 DC operation ms ms ITR0888 Collector Dissipation, P C -- mw 1.0 0 ITR0889 0 80 40 00 160 80 40 Collector Current, I C -- ma PC -- Ta 0.01 1.0 Collector-to-Emitter Voltage, V CE -- V ITR0890 0 0 0 40 60 80 140 Ambient Temperature, Ta -- C ITR09908 No.066-/
SD1 Output Power, P O -- mw Response -- db 0 -- --4 --6 --8 -- PO -- VIN V CC =V R L =8Ω f=1khz 1.0 Input Voltage, V IN -- mv ITR0891 f response 4 V CC =V R L =8Ω 0dB : 44.dB / 1kHz Total Harmonic Distortion, THD -- % Current Dissipation, I CC -- ma THD -- PO 1.0 ITR089 Output Power, P O -- mw ICC -- PO V CC =V R L =8Ω f=1khz V CC =V R L =8Ω f=1khz Output Power, P O -- mw --1 1k k k Frequency, f -- Hz ITR089 PO -- VCC R L =8Ω THD=% f=1khz Output Power, P O -- mw ITR0894 1.4 1.8..6.0.4.8 Supply Voltage, V CC -- V ITR089 No.066-4/
SD1 Taping Specification SD1G-SPA-AC, SD1F-SPA-AC No.066-/
SD1 No.066-6/
SD1 Outline Drawing SD1G-SPA-AC, SD1F-SPA-AC Mass (g) Unit 0.1 * For reference mm No.066-/
SD1 Bag Packing Specification SD1G-SPA, SD1F-SPA No.066-8/
SD1 Outline Drawing SD1G-SPA, SD1F-SPA Mass (g) Unit 0.1 * For reference mm No.066-9/
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