Enhanced isocink+ Bridge Rectifiers

Similar documents
FEATURES. Package. PARAMETER SYMBOL PB3506 PB3508 PB3510 UNIT Maximum repetitive peak reverse voltage V RRM V 35 T A = 25 C (2) 4.

Enhanced isocink+ Bridge Rectifiers

FEATURES. Package. PARAMETER SYMBOL PB4006 PB4008 PB4010 UNIT Maximum repetitive peak reverse voltage V RRM V

Enhanced isocink+ Bridge Rectifiers

Enhanced Power Bridge Rectifiers

FEATURES. Package. PARAMETER SYMBOL PB4006 PB4008 PB4010 UNIT Maximum repetitive peak reverse voltage V RRM V 40 T A = 25 C (2) 4.

Dual Common Cathode Ultrafast Rectifier

UF4001, UF4002, UF4003, UF4004, UF4005, UF4006, UF4007 Ultrafast Plastic Rectifier

Dual Common Cathode Ultrafast Plastic Rectifier

High-Voltage Trench MOS Barrier Schottky Rectifier

Dual High Voltage Trench MOS Barrier Schottky Rectifier

Dual High Voltage Trench MOS Barrier Schottky Rectifier

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

Dual Common-Cathode Ultrafast Rectifier

Ultrafast Rectifier FEATURES

Photovoltaic Solar Cell Protection Schottky Rectifier

Glass Passivated Junction Plastic Rectifier

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

Glass Passivated Ultrafast Plastic Rectifier

SMD Photovoltaic Solar Cell Protection Rectifier

Surface Mount Glass Passivated Rectifier

Photovoltaic Solar Cell Protection Schottky Rectifier

Ultrafast Plastic Rectifier

High Current Density Surface Mount Ultrafast Rectifiers

General Purpose Plastic Rectifier

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

High Voltage Glass Passivated Junction Plastic Rectifier

High Voltage Schottky Rectifier

Surface Mount Ultrafast Plastic Rectifier

Ultrafast Plastic Rectifier

Dual Common Cathode Ultrafast Plastic Rectifier

High Voltage Schottky Rectifier

High Voltage Ultrafast Avalanche SMD Rectifiers

Surface Mount Ultrafast Plastic Rectifier

SMD Photovoltaic Solar Cell Protection Schottky Rectifier

High Current Density Surface Mount Glass Passivated Rectifiers

Ultrafast Avalanche SMD Rectifier

SMD Photovoltaic Solar Cell Protection Schottky Rectifier

Schottky Barrier Rectifier

Ultrafast Avalanche SMD Rectifier

Surface Mount Ultrafast Plastic Rectifier

Surface-Mount Glass Passivated Rectifier

Photovoltaic Solar Cell Protection Schottky Rectifier

Fast Avalanche SMD Rectifier

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

Dual Common Cathode High Voltage Schottky Rectifier

Surface Mount Ultrafast Plastic Rectifier

High Current Density Surface Mount Schottky Barrier Rectifiers

Dual Common Cathode Ultrafast Rectifier

High Current Density Surface Mount Schottky Barrier Rectifiers

Ultrafast Avalanche SMD Rectifier

Dual Common Cathode Ultrafast Soft Recovery Rectifier

Ultrafast Rectifier V AC 1500 V

Ultrafast Avalanche Surface Mount Rectifiers

Fast Switching Avalanche Surface Mount Rectifiers

Surface Mount Ultrafast Plastic Rectifier

Surface Mount Trench MOS Barrier Schottky Rectifier

Surface Mount Power Voltage-Regulating Diodes

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

P4KE6.8A thru P4KE540A. TRANSZORB Transient Voltage Suppressors. Vishay General Semiconductor. FEATURES PRIMARY CHARACTERISTICS

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

High Current Density Surface Mount High Voltage Schottky Rectifier

High Temperature Stability and High Reliability Conditions FEATURES. PARAMETER SYMBOL VALUE UNIT with 10/1000 μs waveform Peak pulse power dissipation

Surface Mount Fast Avalanche Rectifiers

V20120SG-E3, VF20120SG-E3, VB20120SG-E3, VI20120SG-E3 High Voltage Trench MOS Barrier Schottky Rectifier

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

High Current Density Surface Mount Dual Common Cathode Schottky Rectifier

High Current Density Surface Mount High Voltage Schottky Rectifiers

V20150SG-E3, VF20150SG-E3, VB20150SG-E3, VI20150SG-E3 High Voltage Trench MOS Barrier Schottky Rectifier

Dual Common Cathode Schottky Rectifier

Surface Mount Trench MOS Barrier Schottky Rectifier

High Current Density Surface Mount Glass Passivated Rectifiers

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

ICTE5 thru ICTE18C, 1N6373 thru 1N6386. TRANSZORB Transient Voltage Suppressors. Vishay General Semiconductor.

Ultrafast Avalanche Surface Mount Rectifiers

Surface Mount Glass Passivated Junction Rectifier

Surface Mount Trench MOS Barrier Schottky Rectifier

Dual Common-Cathode Ultrafast Recovery Rectifier

Surface Mount Schottky Barrier Rectifier

Surface Mount Schottky Barrier Rectifier

Surface Mount Trench MOS Barrier Schottky Rectifier

Surface Mount Ultra Fast Rectifier

5KP8.5A thru 5KP188A. TRANSZORB Transient Voltage Suppressors. Vishay General Semiconductor. FEATURES TYPICAL APPLICATIONS

High Temperature Stability and High Reliability Conditions FEATURES

High Temperature Stability and High Reliability Conditions FEATURES

Surface Mount Standard Rectifiers

FEATURES. PARAMETER SYMBOL V8PAM10 UNIT Device marking code Maximum repetitive peak reverse voltage V RRM 100 V

High Voltage Ultrafast Rectifier

Ultrafast Avalanche SMD Rectifier

BYV29-xxx, BYV29F-xxx, BYV29B-xxx, UG8xT, UGF8xT, UGB8xT Ultrafast Rectifier

BYG10D, BYG10G, BYG10J, BYG10K, BYG10M, BYG10Y Standard Avalanche SMD Rectifier

Fast Switching Plastic Rectifier

Fast Avalanche SMD Rectifier

Surface-Mount Standard Rectifiers

General Purpose Plastic Rectifier

High Temperature Stability and High Reliability Conditions FEATURES

Surface Mount TRANSZORB Transient Voltage Suppressors

Surface Mount TRANSZORB Transient Voltage Suppressors

P6KE6.8A thru P6KE540A. TRANSZORB Transient Voltage Suppressors. Vishay General Semiconductor. FEATURES PRIMARY CHARACTERISTICS

High Current Density Surface Mount Dual Common-Cathode Schottky Rectifier

Transcription:

Enhanced isocink+ Bridge Rectifiers - ~ ~ + isocink+ Case Style BU PRIMARY CHARACTERISTICS Package BU I F(AV) 5 A V RRM 6 V, 8 V, V I FSM 2 A I R 5 μa V F at I F = 7.5 A.87 V T J max. 5 C Circuit configuration In-line FEATURES UL recognition file number E32394 Thin single in-line package Glass passivated chip junction Available for BU-5S lead forming option Available (part number with 5S suffix, e.g. BU565S) Superior thermal conductivity Solder dip 275 C max. s, per JESD 22-B6 Material categorization: for definitions of compliance please see www.vishay.com/doc?9992 TYPICAL APPLICATIONS General purpose use in AC/DC bridge full wave rectification for switching power supply, home appliances and white-goods applications. MECHANICAL DATA Case: BU Molding compound meets UL 94 V- flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: matte tin plated leads, solderable per J-STD-2 and JESD 22-B2 E3 and M3 suffix meet JESD 2 class A whisker test Polarity: as marked on body Mounting Torque: cm-kg (8.8 inches-lbs) max. Recommended Torque: 5.7 cm-kg (5 inches-lbs) MAXIMUM RATINGS (T A = 25 C unless otherwise noted) PARAMETER SYMBOL BU56 BU58 BU5 UNIT Maximum repetitive peak reverse voltage V RRM 6 8 V Average rectified forward current (Fig., 2) T C = 8 C () 5 I O T A = 25 C (2) 3.4 A Non-repetitive peak forward surge current 8.3 ms single sine-wave, T J = 25 C I FSM 2 A Rating for fusing (t < 8.3 ms) T J = 25 C I 2 t 6 A 2 s Operating junction and storage temperature range T J, T STG -55 to +5 C Notes () With 6 W air cooled heatsink (2) Without heatsink, free air ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL MAX. UNIT Maximum instantaneous forward T A = 25 C.97.5 voltage per diode () I F = 7.5 A V F T A = 25 C.87.95 V T A = 25 C - 5. Maximum reverse current per diode rated V R I R T A = 25 C 9 25 μa Typical junction capacitance per diode 4. V, MHz C J 7 - pf Note () Pulse test: 3 μs pulse width, % duty cycle Revision: 29-Aug-7 Document Number: 8483

THERMAL CHARACTERISTICS (T A = 25 C unless otherwise noted) PARAMETER SYMBOL BU56 BU58 BU5 UNIT Typical thermal resistance Notes () With 6 W air cooled heatsink (2) Without heatsink, free air R JC () 2.5 R JA (2) 2 C/W ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE BU56-E3/45 4.75 45 2 Tube BU56-E3/5 4.75 5 25 Paper tray BU56-M3/45 4.75 45 2 Tube BU565S-E3/45 4.75 45 2 Tube RATINGS AND CHARACTERISTICS CURVES (T A = 25 C unless otherwise specified) Average Forward Output Current (A) 2 5 5 T C With Heatsink Sine-Wave, R-Load T C Measured at Device Bottom T C Forward Power Dissipation (W) 36 32 28 24 2 6 2 8 4 25 5 75 25 5 Case Temperature ( C) 2 4 6 8 2 4 6 8 Average Forward Current (A) Fig. - Derating Curve Output Rectified Current Fig. 3 - Forward Power Dissipation Average Forward Rectified Current (A) 5 4 3 2 Without Heatsink Sine-Wave, R-Load Free Air, T A 25 5 75 25 5 Ambient Temperature ( C) Instantaneous Forward Current (A) T J = 5 C T J = 25 C. T J = 25 C..3.4.5.6.7.8.9...2 Instantaneous Forward Voltage (V) Fig. 2 - Forward Current Derating Curve Fig. 4 - Typical Forward Characteristics Per Diode Revision: 29-Aug-7 2 Document Number: 8483

Junction Capacitance (pf) www.vishay.com Instantaneous Reverse Current (µa) T J = 5 C T J = 25 C. T J = 25 C. 2 3 4 5 6 7 8 9 Percent of Rated Peak Reverse Voltage (%) Fig. 5 - Typical Reverse Characteristics Per Diode. Reverse Voltage (V) Fig. 6 - Typical Junction Capacitance Per Diode PACKAGE OUTLINE DIMENSIONS in inches (millimeters).25 (3.2) x 45 Chamfer Case Type BU.88 (22.3).86 (2.8).6 (4.).4 (3.5).2R ().3 (7.9).29 (7.4) 9.6 (4.).42 (3.6) View A.6 (.52).75 (.9) R 5.74 (8.8).72 (8.3).48 (.23).39 (.).7 (8.).69 (7.5).5 (.27).4 (.2). (2.54).9 (4.83).2 (5.33).28 (.72).2 (.52) Polarity shown on front side of case, positive lead beveled corner.55 (.385) REF..64 (6.28) REF. R. (2.78) REF..94 (2.39) x 45 REF..62 (5.78) REF. R. (2.6) REF..55 (.385) REF. Revision: 29-Aug-7 3 Document Number: 8483

FORMING SPECIFICATION: BU-5S in inches (millimeters).25 (3.2) x 45 Chamfer.88 (22.3).86 (2.8).6 (4.).4 (3.5).2R ().3 (7.9).29 (7.4).6 (4.).42 (3.6) 9.6 (.52).75 (.9) R. (2.54).29 (5.55) MAX..74 (8.8).72 (8.3) 5.5 (.27).4 (.2).23 (5.4).73 (4.4).47 (.6).37 (9.4).39 (8.).272 (6.9).39 (8.).272 (6.9).34 (3.4).87 (2.2).35 (8.).276 (7.).28 (.72).2 (.52) APPLICATION NOTE. Device UL approved for safety use dielectric strength of 5 V. 2. If device is mounted in Floating Ground (F. G.) application, insulator is recommended to use to meet safety requirement. 3. Heat sink shape recommendation: (3) Heatsink 2.5 mm MIN. 2.5 mm MIN. By Safety Requirements Revision: 29-Aug-7 4 Document Number: 8483

Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. 27 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 8-Feb-7 Document Number: 9