Hardware Documentation Data Sheet HAL 1...6, 8, 9, HAL 16...19, 23 Hall Effect Sensor Family Edition Nov. 27, 23 621-48-4DS
HALxx DATA SHEET Contents Page Section Title 3 1. Introduction 3 1.1. Features 3 1.2. Family Overview 4 1.3. Marking Code 4 1.3.1. Special Marking of Prototype Parts 4 1.4. Operating Junction Temperature Range 4 1.. Hall Sensor Package Codes 4 1.6. Solderability 2. Functional Description 6 3. Specifications 6 3.1. Outline Dimensions 11 3.2. Dimensions of Sensitive Area 11 3.3. Positions of Sensitive Areas 11 3.4. Absolute Maximum Ratings 11 3.4.1. Storage and Shelf Life 12 3.. Recommended Operating Conditions 13 3.6. Characteristics 14 3.7. Magnetic Characteristics Overview 2 4. Type Descriptions 2 4.1. HAL1 22 4.2. HAL2 24 4.3. HAL3 26 4.4. HAL4 28 4.. HAL 3 4.6. HAL6 32 4.7. HAL8 34 4.8. HAL9 36 4.9. HAL16 38 4.1. HAL17 4 4.11. HAL18 42 4.12. HAL19 44 4.13. HAL23 46. Application Notes 46.1. Ambient Temperature 46.2. Extended Operating Conditions 46.3. Start-up Behavior 46.4. EMC 48 6. Data Sheet History 2 Micronas
DATA SHEET HALxx Hall Effect Sensor Family in CMOS technology Release Notes: Revision bars indicate significant changes to the previous edition. 1. Introduction The HALxx family consists of different Hall switches produced in CMOS technology. All sensors include a temperature-compensated Hall plate with active offset compensation, a comparator, and an open-drain output transistor. The comparator compares the actual magnetic flux through the Hall plate (Hall voltage) with the fixed reference values (switching points). Accordingly, the output transistor is switched on or off. The sensors of this family differ in the switching behavior and the switching points. The active offset compensation leads to constant magnetic characteristics over supply voltage and temperature range. In addition, the magnetic parameters are robust against mechanical stress effects. The sensors are designed for industrial and automotive applications and operate with supply voltages from 3.8 V to 24 V in the ambient temperature range from 4 C up to 1 C. All sensors are available in the SMD-package SOT89B-1 and in the leaded versions TO92UA-1 and TO92UA-2. 1.1. Features: switching offset compensation at typically 62 khz operates from 3.8 V to 24 V supply voltage overvoltage protection at all pins reverse-voltage protection at -pin magnetic characteristics are robust regarding mechanical stress effects short-circuit protected open-drain output by thermal shut down operates with static magnetic fields and dynamic magnetic fields up to 1 khz constant switching points over a wide supply voltage range the decrease of magnetic flux density caused by rising temperature in the sensor system is compensated by a built-in negative temperature coefficient of the magnetic characteristics ideal sensor for applications in extreme automotive and industrial environments EMC corresponding to DIN 4839 1.2. Family Overview The types differ according to the magnetic flux density values for the magnetic switching points, the temperature behavior of the magnetic switching points, and the mode of switching. Type Switching Behavior Sensitivity 1 bipolar very high 2 2 latching high 22 3 latching medium 24 4 unipolar medium 26 latching low 28 6 unipolar high 3 8 unipolar medium 32 9 unipolar low 34 16 unipolar with inverted output 17 unipolar with inverted output 18 unipolar with inverted output 19 unipolar with inverted output (north polarity) high 36 medium 38 medium 4 high 42 23 unipolar low 44 Latching Sensors: see Page The output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. The output does not change if the magnetic field is removed. For changing the output state, the opposite magnetic field polarity must be applied. Bipolar Switching Sensors: The output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. The output state is not defined for all sensors if the magnetic field is removed again. Some sensors will change the output state and some sensors will not. Micronas 3
HALxx DATA SHEET Unipolar Switching Sensors: The output turns low with the magnetic south pole on the branded side of the package and turns high if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. Unipolar Switching Sensors with Inverted Output: The output turns high with the magnetic south pole on the branded side of the package and turns low if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. Unipolar Switching Sensors with Inverted Output Sensitive to North Pole: The output turns high with the magnetic north pole on the branded side of the package and turns low if the magnetic field is removed. The sensor does not respond to the magnetic south pole on the branded side. 1.3. Marking Code All Hall sensors have a marking on the package surface (branded side). This marking includes the name of the sensor and the temperature range. Type Temperature Range HAL1 1A 1K HAL2 2A 2K HAL3 3A 3K HAL4 4A 4K HAL A K HAL6 6A 6K HAL8 8A 8K HAL9 9A 9K HAL16 16A 16K HAL17 17A 17K HAL18 18A 18K HAL19 19A 19K HAL23 23A 23K A K for lab experiments and design-ins but are not intended to be used for qualification tests or as production parts. 1.4. Operating Junction Temperature Range The Hall sensors from Micronas are specified to the chip temperature (junction temperature T J ). A: T J = 4 C to +17 C K: T J = 4 C to +14 C Note: Due to the high power dissipation at high current consumption, there is a difference between the ambient temperature (T A ) and junction temperature. Please refer to section.1. on page 46 for details. 1.. Hall Sensor Package Codes HALXXXPA-T Example: HALUA-K Temperature Range: A or K Package: SF for SOT89B-1 UA for TO92UA Type: xx Type: Package: TO92UA Temperature Range: T J = 4 C to +14 C Hall sensors are available in a wide variety of packaging versions and quantities. For more detailed information, please refer to the brochure: Ordering Codes for Hall Sensors. 1.6. Solderability all packages: according to IEC68-2-8 During soldering reflow processing and manual reworking, a component body temperature of 26 C should not be exceeded. Components stored in the original packaging should provide a shelf life of at least 12 months, starting from the date code printed on the labels, even in environments as extreme as 4 C and 9% relative humidity. 1 OUT 3 1.3.1. Special Marking of Prototype Parts Prototype parts are coded with an underscore beneath the temperature range letter on each IC. They may be used 2 GND Fig. 1 1: Pin configuration 4 Micronas
DATA SHEET HALxx 2. Functional Description HALxx The HAL xx sensors are monolithic integrated circuits which switch in response to magnetic fields. If a magnetic field with flux lines perpendicular to the sensitive area is applied to the sensor, the biased Hall plate forces a Hall voltage proportional to this field. The Hall voltage is compared with the actual threshold level in the comparator. The temperature-dependent bias increases the supply voltage of the Hall plates and adjusts the switching points to the decreasing induction of magnets at higher temperatures. If the magnetic field exceeds the threshold levels, the open drain output switches to the appropriate state. The built-in hysteresis eliminates oscillation and provides switching behavior of output without bouncing. 1 GND 2 Reverse Voltage & Overvoltage Protection Hall Plate Temperature Dependent Bias Switch Hysteresis Control Comparator Clock Fig. 2 1: HALxx block diagram Short Circuit & Overvoltage Protection Output OUT 3 Magnetic offset caused by mechanical stress is compensated for by using the switching offset compensation technique. Thus, an internal oscillator provides a two-phase clock. The Hall voltage is sampled at the end of the first phase. At the end of the second phase, both sampled and actual Hall voltages are averaged and compared with the actual switching point. Subsequently, the open drain output switches to the appropriate state. The time from crossing the magnetic switching level to switching of output can vary between zero and 1/f osc. f osc B t Shunt protection devices clamp voltage peaks at the Output-Pin and -Pin together with external series resistors. Reverse current is limited at the -Pin by an internal series resistor up to 1 V. No external reverse protection diode is needed at the -Pin for reverse voltages ranging from V to 1 V. V OUT V OH V OL t t I DD 1/f osc = 16 µs t f t Fig. 2 2: Timing diagram Micronas
HALxx DATA SHEET 3. Specifications 3.1. Outline Dimensions Fig. 3 1: SOT89B-1: Plastic Small Outline Transistor package, 4 leads Weight approximately.39 g 6 Micronas
DATA SHEET HALxx Fig. 3 2: TO92UA-1: Plastic Transistor Standard UA package, 3 leads, spread Weight approximately.1 g Micronas 7
HALxx DATA SHEET Fig. 3 3: TO92UA-2: Plastic Transistor Standard UA package, 3 leads Weight approximately.1 g 8 Micronas
DATA SHEET HALxx Fig. 3 4: TO92UA-2: Dimensions ammopack inline, not spread Micronas 9
HALxx DATA SHEET Fig. 3 : TO92U-1: Dimensions ammopack inline, spread 1 Micronas
DATA SHEET HALxx 3.2. Dimensions of Sensitive Area.2 mm x.12 mm 3.3. Positions of Sensitive Areas x SOT89B-1 center of the package TO92UA-1/-2 center of the package y.9 mm nominal 1. mm nominal 3.4. Absolute Maximum Ratings Stresses beyond those listed in the Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only. Functional operation of the device at these conditions is not implied. Exposure to absolute maximum rating conditions for extended periods will affect device reliability. This device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than absolute maximum-rated voltages to this circuit. All voltages listed are referenced to ground. Symbol Parameter Pin No. Limit Values Unit Min. Max. Supply Voltage 1 1 28 1) V V O Output Voltage 3.3 28 1) V I O Continuous Output On Current 3 1) ma T J Junction Temperature Range 4 17 2) C 1) as long as T J max is not exceeded 2) t < 1 h 3.4.1. Storage and Shelf Life The permissible storage time (shelf life) of the sensors is unlimited, provided the sensors are stored at a maximum of 3 C and a maximum of 8% relative humidity. At these conditions, no Dry Pack is required. Solderability is guaranteed for one year from the date code on the package. Solderability has been tested after storing the devices for 16 hours at 1 C. The wettability was more than 9%. Micronas 11
HALxx DATA SHEET 3.. Recommended Operating Conditions Functional operation of the device beyond those indicated in the Recommended Operating Conditions of this specification is not implied, may result in unpredictable behavior of the device and may reduce reliability and lifetime. All voltages listed are referenced to ground. Symbol Parameter Pin No. Limit Values Unit Min. Max. Supply Voltage 1 3.8 24 V I O Continuous Output On Current 3 2 ma V O Output Voltage (output switched off) 3 24 V 12 Micronas
DATA SHEET HALxx 3.6. Characteristics at T J = 4 C to +17 C, = 3.8 V to 24 V, at Recommended Operation Conditions if not otherwise specified in the column Conditions. Typical Characteristics for T J = 2 C and = 12 V Symbol Parameter Pin No. Limit Values Unit Conditions Min. Typ. Max. I DD Supply Current 1 2.3 3 4.2 ma T J = 2 C I DD Z Supply Current over Temperature Range Overvoltage Protection at Supply 1 1.6 3.2 ma 1 28. 32 V I DD = 2 ma, T J = 2 C, t = 2 ms V OZ Overvoltage Protection at Output 3 28 32 V I OH = 2 ma, T J = 2 C, t = 2 ms V OL Output Voltage 3 13 28 mv I OL = 2 ma, T J = 2 C V OL Output Voltage over Temperature Range 3 13 4 mv I OL = 2 ma I OH Output Leakage Current 3.6.1 µa Output switched off, T J = 2 C, V OH = 3.8 to 24 V I OH f osc Output Leakage Current over Temperature Range Internal Oscillator Chopper Frequency 3 1 µa Output switched off, T J 1 C, V OH = 3.8 to 24 V 62 khz t en(o) Enable Time of Output after 1 µs = 12 V 1) Setting of t r Output Rise Time 3 7 4 ns = 12 V, R L = 82 Ohm, C L = 2 pf t f Output Fall Time 3 4 ns = 12 V, R L = 82 Ohm, C L = 2 pf R thjsb case SOT89B-1 R thja case TO92UA-1, TO92UA-2 Thermal Resistance Junction to Substrate Backside Thermal Resistance Junction to Soldering Point 1 2 K/W Fiberglass Substrate 3 mm x 1 mm x 1.mm, pad size see Fig. 3 6 1 2 K/W 1) B > + 2 or B < 2 for HAL x, B > + 2 or B < 2 for HAL 1x. 2. 2. 1. Fig. 3 6: Recommended pad size SOT89B-1 Dimensions in mm Micronas 13
HALxx DATA SHEET 3.7. Magnetic Characteristics Overview at T J = 4 C to +17 C, = 3.8 V to 24 V, Typical Characteristics for = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Sensor Parameter On point Off point Hysteresis B HYS Unit Switching type T J Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. HAL 1 4 C.8.6 2. 2..8.8. 1.4 2 bipolar 2 C.. 2.3 2.3.7.. 1.2 1.9 17 C 1..7 3 2..2 2.4.9 1.8 HAL 2 4 C 1 2.8 2.8 1 4..6 7.2 latching 2 C 1 2.6 4. 4. 2.6 1 4..2 7 17 C.9 2.3 4.3 4.3 2.3.9 3. 4.6 6.8 HAL 3 4 C 6.4 8.6 1.8 1.8 8.6 6.4 14.6 17.2 2.6 latching 2 C 6 8 1 1 8 6 13.6 16 18 17 C 4 6.4 8.9 8.9 6 4 11 12.4 16 HAL 4 4 C 1.3 13 1.7.3 7. 9.6 4.4. 6. unipolar 2 C 9. 12 14. 7 9 4 6. 17 C 8. 1.2 13.7 4.2.9 8. 3.2 4.3 6.4 HAL 4 C 11.8 1 18.3 18.3 1 11.8 26 3 34 latching 2 C 11 13. 17 17 13. 11 24 27 32 17 C 9.4 11.7 16.1 16.1 11.7 9.4 2 23.4 31.3 HAL 6 4 C 4.3.9 7.7 2.1 3.8.4 1.6 2.1 2.8 unipolar 2 C 3.8. 7.2 2 3. 1. 2 2.7 17 C 3.2 4.6 6.8 1.7 3.2.9 1.6 2.6 HAL 8 4 C 1. 19 21.9 14 16.7 2 1.6 2.3 2.8 unipolar 2 C 1 18 2.7 13. 16 19 1. 2 2.7 17 C 12.7 1.3 2 11.4 13.6 18.3 1 1.7 2.6 HAL 9 4 C 23.1 27.4 31.1 19.9 23.8 27.2 2.9 3.6 3.9 unipolar 2 C 23.1 26.8 3.4 19.9 23.2 26.6 2.8 3. 3.9 17 C 21.3 2.4 28.9 18.3 22.1 2.3 2. 3.3 3.8 HAL 16 4 C 2.1 3.8.4 4.3.9 7.7 1.6 2.1 2.8 unipolar 2 C 2 3. 3.8. 7.2 1. 2 2.7 inverted 17 C 1.7 3.2 3.2 4.6 6.8.9 1.6 2.6 HAL 17 4 C 14 17.1 21. 1. 19.6 22. 1.6 2. 3 unipolar 2 C 13. 16.2 19 1 18.3 2.7 1. 2.1 2.7 inverted 17 C 9 12.3 18 1. 13.7 2.8 1.4 2.4 HAL 18 4 C 14 16.7 2 1. 19 22 1. 2.3 3 unipolar 2 C 13. 16 19 1 18 2.7 1.4 2 2.8 inverted 17 C 11 13.6 18.3 12.2 1.3 2.8 1.7 2.6 Note: For detailed descriptions of the individual types, see pages 2 and following. 14 Micronas
DATA SHEET HALxx Magnetic Characteristics Overview, continued Sensor Parameter On point Off point Hysteresis B HYS Unit Switching type T J Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. HAL 19 4 C.4 3.8 2.1 7.7.9 4.3 1.6 2.1 2.8 unipolar 2 C 3.6 2 7.2. 3.8 1. 1.9 2.7 inverted 17 C.2 3. 1. 6.8 4.6 2.8.9 1.6 2.6 HAL 23 4 C 28 34. 42 18 24 3 7 1. 14 unipolar 2 C 28 34. 42 18 24 3 7 1. 14 17 C 28 34. 42 18 24 3 7 1. 14 Note: For detailed descriptions of the individual types, see pages 2 and following. ma 2 HAL xx ma. HAL xx 2 4. I DD TA = 4 C 1 T A = 2 C 1 T A =17 C 1 1 1 1 1 1 2 2 3 3 V I DD 4. T A = 4 C 3. T A = 2 C 3. 2. T A = 1 C T A = 17 C 2. 1. 1.. 1 2 3 4 6 7 8 V Fig. 3 7: Typical supply current Fig. 3 8: Typical supply current Micronas 1
HALxx DATA SHEET ma HAL xx khz 1 HAL xx 9 I DD 4 f osc 8 3 = 24 V = 12 V 7 6 T A = 2 C T A = 4 C T A = 17 C 2 = 3.8 V 4 3 1 2 1 1 1 2 C 1 1 2 2 3 V T A Fig. 3 9: Typical supply current versus ambient temperature Fig. 3 11: Typ. Internal chopper frequency khz 1 HAL xx khz 1 HAL xx 9 9 f osc 8 f osc 8 7 6 = 3.8 V 7 6 T A =2 C T A = 4 C = 4. V...24 V T A =17 C 4 4 3 3 2 2 1 1 1 1 2 C 3 3. 4. 4... 6. V Fig. 3 1: Typ. internal chopper frequency versus ambient temperature T A Fig. 3 12: Typ. internal chopper frequency 16 Micronas
DATA SHEET HALxx mv 4 HAL xx I O = 2 ma mv 4 HAL xx I O = 2 ma 3 V OL 3 2 T A = 17 C V OL 3 = 3.8 V = 4. V = 24 V 2 T A = 1 C 2 1 T A = 2 C 1 T A = 4 C 1 1 1 2 2 3 V 1 1 2 C Fig. 3 13: Typical output low voltage T A Fig. 3 1: Typical output low voltage versus ambient temperature mv 6 V OL 4 3 2 HAL xx I O = 2 ma T A =17 C T A =1 C T A =2 C A HALxx 1 4 1 3 I OH 1 2 T A =17 C 1 1 T A =1 C 1 T A =1 C 1 1 1 2 T A =2 C 1 3 1 T A = 4 C 1 4 1 T A = 4 C 3 3. 4. 4... 6. V 1 6 1 2 2 3 3 V Fig. 3 14: Typical output low voltage V OH Fig. 3 16: Typical output high current versus output voltage Micronas 17
HALxx DATA SHEET µa HALxx 1 2 1 1 I OH VOH = 24 V 1 dbµv 8 7 6 HAL xx V P = 12 V T A = 2 C Quasi-Peak- Measurement test circuit 2 1 1 1 2 V OH = 3.8 V 4 3 max. spurious signals 1 3 2 1 4 1 1 1 1 2 C Fig. 3 17: Typical output leakage current versus ambient temperature T A.1.1 1. 1 1. 1. 1. MHz f Fig. 3 19: Typ. spectrum at supply voltage I DD dbµa 3 2 1 HAL xx = 12 V T A = 2 C Quasi-Peak- Measurement max. spurious signals 1 2 3.1.1 1. 1 1. 1. 1. MHz f Fig. 3 18: Typ. spectrum of supply current 18 Micronas
DATA SHEET HALxx intentionally left vacant Micronas 19
HAL1 DATA SHEET 4. Type Descriptions 4.1. HAL1 The HAL1 is the most sensitive sensor of this family with bipolar switching behavior (see Fig. 4 1). The output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. The output state is not defined for all sensors if the magnetic field is removed again. Some sensors will change the output state and some sensors will not. For correct functioning in the application, the sensor requires both magnetic polarities (north and south) on the branded side of the package. Magnetic Features: switching type: bipolar very high sensitivity typical :. at room temperature typical :.7 at room temperature operates with static magnetic fields and dynamic magnetic fields up to 1 khz Applications The HAL1 is the optimal sensor for all applications with alternating magnetic signals and weak magnetic amplitude at the sensor position such as: applications with large airgap or weak magnets, rotating speed measurement, CAM shaft sensors, and magnetic encoders. V O Output Voltage B HYS V OL Fig. 4 1: Definition of magnetic switching points for the HAL1 B Magnetic Characteristics at T J = 4 C to +17 C, = 3.8 V to 24 V, Typical Characteristics for = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter On point Off point Hysteresis B HYS Magnetic Offset SET Unit T J Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. 4 C.8.6 2. 2..8.8. 1.4 2.1 2 C.. 2.3 2.3.7.. 1.2 1.9 1.4.1 1.4 14 C 1.2.6 2.8 2.. 1.3. 1.1 1.8 17 C 1..7 3 2..2 2.4.9 1.8.2 The hysteresis is the difference between the switching points B HYS = The magnetic offset is the mean value of the switching points SET = ( + ) / 2 2 Micronas
DATA SHEET HAL1 3 HAL 1 3 HAL 1 max 2 2 max 1 1 typ typ 1 T A = 4 C T A = 2 C 2 T A = 1 C T A = 17 C 3 1 1 2 2 3 V 1 = 3.8 V min 2 = 4. V...24 V min 3 1 1 2 C Fig. 4 2: Typ. magnetic switching points T A, T J Fig. 4 4: Magnetic switching points versus temperature 3 HAL 1 Note: In the diagram Magnetic switching points versus temperature the curves for min, max, min, and max refer to junction temperature, whereas typical curves refer to ambient temperature. 2 1 1 T A = 4 C T A = 2 C 2 T A = 1 C T A = 17 C 3 3 3. 4. 4... 6. V Fig. 4 3: Typ. magnetic switching points Micronas 21
HAL2 DATA SHEET 4.2. HAL2 The HAL2 is the most sensitive latching sensor of this family (see Fig. 4 ). The output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. The output does not change if the magnetic field is removed. For changing the output state, the opposite magnetic field polarity must be applied. For correct functioning in the application, the sensor requires both magnetic polarities (north and south) on the branded side of the package. Magnetic Features: switching type: latching high sensitivity typical : 2.6 at room temperature typical : 2.6 at room temperature operates with static magnetic fields and dynamic magnetic fields up to 1 khz typical temperature coefficient of magnetic switching points is 1 ppm/k Applications The HAL2 is the optimal sensor for all applications with alternating magnetic signals and weak magnetic amplitude at the sensor position such as: applications with large airgap or weak magnets, rotating speed measurement, commutation of brushless DC motors, CAM shaft sensors, and magnetic encoders. V O Output Voltage B HYS V OL Fig. 4 : Definition of magnetic switching points for the HAL2 B Magnetic Characteristics at T J = 4 C to +17 C, = 3.8 V to 24 V, Typical Characteristics for = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter On point Off point Hysteresis B HYS Magnetic Offset Unit T J Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. 4 C 1 2.8 2.8 1 4..6 7.2 2 C 1 2.6 4. 4. 2.6 1 4..2 7 1. 1. 14 C.9 2.4 4.3 4.3 2.4.9 3.7 4.8 6.8 17 C.9 2.3 4.3 4.3 2.3.9 3. 4.6 6.8 The hysteresis is the difference between the switching points B HYS = The magnetic offset is the mean value of the switching points SET = ( + ) / 2 22 Micronas
DATA SHEET HAL2 6 HAL 2 6 HAL 2 4 4 max 2 T A = 4 C 2 min typ 2 T A = 2 C T A = 1 C T A = 17 C 2 = 3.8 V = 4. V...24 V max typ 4 4 min 6 1 1 2 2 3 V 6 1 1 2 C Fig. 4 6: Typ. magnetic switching points T A, T J Fig. 4 8: Magnetic switching points versus temperature 6 HAL 2 Note: In the diagram Magnetic switching points versus temperature the curves for min, max, min, and max refer to junction temperature, whereas typical curves refer to ambient temperature. 4 2 2 T A = 4 C T A =2 C T A =1 C T A =17 C 4 6 3 3. 4. 4... 6. V Fig. 4 7: Typ. magnetic switching points Micronas 23
HAL3 DATA SHEET 4.3. HAL3 The HAL3 is a latching sensor (see Fig. 4 9). The output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. The output does not change if the magnetic field is removed. For changing the output state, the opposite magnetic field polarity must be applied. For correct functioning in the application, the sensor requires both magnetic polarities (north and south) on the branded side of the package. Magnetic Features: switching type: latching medium sensitivity typical : 7.6 at room temperature typical : 7.6 at room temperature operates with static magnetic fields and dynamic magnetic fields up to 1 khz typical temperature coefficient of magnetic switching points is 1 ppm/k Applications The HAL 3 is the optimal sensor for applications with alternating magnetic signals such as: multipole magnet applications, rotating speed measurement, commutation of brushless DC motors, and window lifters. V O Output Voltage B HYS V OL Fig. 4 9: Definition of magnetic switching points for the HAL3 B Magnetic Characteristics at T J = 4 C to +17 C, = 3.8 V to 24 V, Typical Characteristics for = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter On point Off point Hysteresis B HYS Magnetic Offset Unit T J Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. 4 C 6.4 8.4 1.8 1.8 8.6 6.4 14.6 17 2.6.1 2 C 6 7.6 1 1 7.6 6 13.6 1.2 18 1. 1. 14 C 4.4 6.7 9.2 9.2 6.4 4.4 11. 13.1 16..1 17 C 4 6.4 8.9 8.9 6 4 11 12.4 16.2 The hysteresis is the difference between the switching points B HYS = The magnetic offset is the mean value of the switching points SET = ( + ) / 2 24 Micronas
DATA SHEET HAL3 12 HAL 3 12 HAL 3 max 8 8 typ 4 4 min T A = 4 C T A = 2 C T A = 1 C = 3.8 V = 4. V...24 V T A = 17 C 4 4 max 8 8 typ 12 1 1 2 2 3 V min 12 1 1 2 C Fig. 4 1: Typ. magnetic switching points T A, T J Fig. 4 12: Magnetic switching points versus temperature 12 HAL 3 Note: In the diagram Magnetic switching points versus ambient temperature the curves for min, max, min, and max refer to junction temperature, whereas typical curves refer to ambient temperature. 8 4 4 T A = 4 C T A = 2 C T A = 1 C T A = 17 C 8 12 3 3. 4. 4... 6. V Fig. 4 11: Typ. magnetic switching points Micronas 2
HAL4 DATA SHEET 4.4. HAL4 The HAL 4 is a unipolar switching sensor (see Fig. 4 13). The output turns low with the magnetic south pole on the branded side of the package and turns high if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. Magnetic Features: switching type: unipolar Applications The HAL 4 is the optimal sensor for applications with one magnetic polarity such as: solid state switches, contactless solution to replace micro switches, position and end-point detection, and rotating speed measurement. Output Voltage V O B HYS medium sensitivity typical : 12 at room temperature typical : 7 at room temperature operates with static magnetic fields and dynamic magnetic fields up to 1 khz typical temperature coefficient of magnetic switching points is 1 ppm/k V OL Fig. 4 13: Definition of magnetic switching points for the HAL4 B Magnetic Characteristics at T J = 4 C to +17 C, = 3.8 V to 24 V, Typical Characteristics for = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter On point Off point Hysteresis B HYS Magnetic Offset Unit T J Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. 4 C 1.3 13 1.7.3 7. 9.6 4.4. 6. 1.2 2 C 9. 12 14. 7 9 4 6. 7.2 9. 11.8 14 C 8.7 1.6 13.9 4.4 6.1 8.6 3.4 4. 6.4 8.4 17 C 8. 1.2 13.7 4.2.9 8. 3.2 4.3 6.4 8 The hysteresis is the difference between the switching points B HYS = The magnetic offset is the mean value of the switching points SET = ( + ) / 2 26 Micronas
DATA SHEET HAL4 18 HAL 4 18 HAL 4 16 14 16 14 max 12 12 1 1 min typ 8 8 max 6 4 2 T A = 4 C T A =2 C T A =1 C T A =17 C 1 1 2 2 3 V 6 typ 4 min 2 = 3.8 V = 4. V...24 V 1 1 2 C Fig. 4 14: Typ. magnetic switching points T A, T J Fig. 4 16: Magnetic switching points versus temperature 18 HAL 4 Note: In the diagram Magnetic switching points versus temperature the curves for min, max, min, and max refer to junction temperature, whereas typical curves refer to ambient temperature. 16 14 12 1 8 6 4 2 T A = 4 C T A =2 C T A = 1 C T A = 17 C 3 3. 4. 4... 6. V Fig. 4 1: Typ. magnetic switching points Micronas 27
HAL DATA SHEET 4.. HAL The HAL is a latching sensor (see Fig. 4 17). The output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. The output does not change if the magnetic field is removed. For changing the output state, the opposite magnetic field polarity must be applied. For correct functioning in the application, the sensor requires both magnetic polarities (north and south) on the branded side of the package. Magnetic Features: switching type: latching low sensitivity typical : 13. at room temperature typical : 13. at room temperature operates with static magnetic fields and dynamic magnetic fields up to 1 khz typical temperature coefficient of magnetic switching points is 1 ppm/k Applications The HAL is the optimal sensor for applications with alternating magnetic signals such as: multipole magnet applications, rotating speed measurement, commutation of brushless DC motors, and window lifters. V O Output Voltage B HYS V OL Fig. 4 17: Definition of magnetic switching points for the HAL B Magnetic Characteristics at T J = 4 C to +17 C, = 3.8 V to 24 V, Typical Characteristics for = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter On point Off point Hysteresis B HYS Magnetic Offset Unit T J Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. 4 C 11.8 1 18.3 18.3 1 11.8 26 3 34 2 C 11 13. 17 17 13. 11 24 27 32 1. 1. 14 C 9.7 12 16.3 16.3 12 9.7 21 24.2 31.3 17 C 9.4 11.7 16.1 16.1 11.7 9.4 2 23.4 31.3 The hysteresis is the difference between the switching points B HYS = The magnetic offset is the mean value of the switching points SET = ( + ) / 2 28 Micronas
DATA SHEET HAL 2 1 1 HAL 2 1 1 max min HAL typ T A = 4 C = 3.8 V T A = 2 C T A = 1 C = 4. V...24 V T A = 17 C 1 1 max typ 1 1 2 1 1 2 2 3 V min 2 1 1 2 C Fig. 4 18: Typ. magnetic switching points T A, T J Fig. 4 2: Magnetic switching points versus temperature 2 1 1 HAL Note: In the diagram Magnetic switching points versus ambient temperature the curves for min, max, min, and max refer to junction temperature, whereas typical curves refer to ambient temperature. T A = 4 C T A = 2 C T A = 1 C T A = 17 C 1 1 2 3 3. 4. 4... 6. V Fig. 4 19: Typ. magnetic switching points Micronas 29
HAL6 DATA SHEET 4.6. HAL6 The HAL 6 is the most sensitive unipolar switching sensor of this family (see Fig. 4 21). The output turns low with the magnetic south pole on the branded side of the package and turns high if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. In the HALxx family, the HAL16 is a sensor with the same magnetic characteristics but with an inverted output characteristic. Applications The HAL6 is the optimal sensor for all applications with one magnetic polarity and weak magnetic amplitude at the sensor position such as: applications with large airgap or weak magnets, solid state switches, contactless solution to replace micro switches, position and end point detection, and rotating speed measurement. Output Voltage V O Magnetic Features: B HYS switching type: unipolar high sensitivity typical :. at room temperature typical : 3. at room temperature operates with static magnetic fields and dynamic magnetic fields up to 1 khz V OL Fig. 4 21: Definition of magnetic switching points for the HAL6 B typical temperature coefficient of magnetic switching points is 1 ppm/k Magnetic Characteristics at T J = 4 C to +17 C, = 3.8 V to 24 V, Typical Characteristics for = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter On point Off point Hysteresis B HYS Magnetic Offset Unit T J Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. 4 C 4.3.9 7.7 2.1 3.8.4 1.6 2.1 2.8 4.8 2 C 3.8. 7.2 2 3. 1. 2 2.7 3.8 4. 6.2 14 C 3.4 4.8 6.9 1.8 3.1.1 1 1.7 2.6 4 17 C 3.2 4.6 6.8 1.7 3.2.9 1.6 2.6 3.8 The hysteresis is the difference between the switching points B HYS = The magnetic offset is the mean value of the switching points SET = ( + ) / 2 3 Micronas
DATA SHEET HAL6 8 HAL 6 8 HAL 6 7 6 7 6 max max typ 4 4 min 3 2 1 T A = 4 C T A =2 C T A =1 C T A =17 C 3 2 1 min = 3.8 V = 4. V...24 V typ 1 1 2 2 3 V 1 1 2 C Fig. 4 22: Typ. magnetic switching points T A, T J Fig. 4 24: Magnetic switching points versus temperature 8 HAL 6 Note: In the diagram Magnetic switching points versus temperature the curves for min, max, min, and max refer to junction temperature, whereas typical curves refer to ambient temperature. 7 6 4 3 2 1 T A = 4 C T A = 2 C T A = 1 C T A = 17 C 3 3. 4. 4... 6. V Fig. 4 23: Typ. magnetic switching points Micronas 31
HAL8 DATA SHEET 4.7. HAL8 The HAL 8 is a unipolar switching sensor (see Fig. 4 2). The output turns low with the magnetic south pole on the branded side of the package and turns high if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. In the HALxx family, the HAL18 is a sensor with the same magnetic characteristics but with an inverted output characteristic. Applications The HAL 8 is the optimal sensor for applications with one magnetic polarity such as: solid state switches, contactless solution to replace micro switches, position and end point detection, and rotating speed measurement. Output Voltage V O B HYS Magnetic Features: switching type: unipolar medium sensitivity typical : 18 at room temperature typical : 16 at room temperature V OL Fig. 4 2: Definition of magnetic switching points for the HAL8 B operates with static magnetic fields and dynamic magnetic fields up to 1 khz typical temperature coefficient of magnetic switching points is 1 ppm/k Magnetic Characteristics at T J = 4 C to +17 C, = 3.8 V to 24 V, Typical Characteristics for = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter On point Off point Hysteresis B HYS Magnetic Offset Unit T J Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. 4 C 1. 19 21.9 14 16.7 2 1.6 2.3 2.8 17.8 2 C 1 18 2.7 13. 16 19 1. 2 2.7 14 17 2 14 C 13.2 1.8 2.2 11.9 14.1 18. 1.1 1.7 2.6 1 17 C 12.7 1.3 2 11.4 13.6 18.3 1 1.7 2.6 14.4 The hysteresis is the difference between the switching points B HYS = The magnetic offset is the mean value of the switching points SET = ( + ) / 2 32 Micronas
DATA SHEET HAL8 2 HAL 8 2 HAL 8 2 2 max max 1 1 T A = 4 C T A =2 C T A =1 C T A =17 C 1 1 typ typ min min = 3.8 V = 4. V...24 V 1 1 2 2 3 V 1 1 2 C Fig. 4 26: Typ. magnetic switching points T A, T J Fig. 4 28: Magnetic switching points versus temperature 2 HAL 8 Note: In the diagram Magnetic switching points versus temperature the curves for min, max, min, and max refer to junction temperature, whereas typical curves refer to ambient temperature. 2 1 1 T A = 4 C T A = 2 C T A = 1 C T A = 17 C 3 3. 4. 4... 6. V Fig. 4 27: Typ. magnetic switching points Micronas 33
HAL9 DATA SHEET 4.8. HAL9 The HAL 9 is a unipolar switching sensor (see Fig. 4 29). The output turns low with the magnetic south pole on the branded side of the package and turns high if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. Magnetic Features: switching type: unipolar low sensitivity typical : 26.8 at room temperature typical : 23.2 at room temperature operates with static magnetic fields and dynamic magnetic fields up to 1 khz typical temperature coefficient of magnetic switching points is 3 ppm/k Applications The HAL 9 is the optimal sensor for applications with one magnetic polarity and strong magnetic fields at the sensor position such as: solid state switches, contactless solution to replace micro switches, position and end point detection, and rotating speed measurement. Output Voltage V O B HYS V OL Fig. 4 29: Definition of magnetic switching points for the HAL9 B Magnetic Characteristics at T J = 4 C to +17 C, = 3.8 V to 24 V, Typical Characteristics for = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter On point Off point Hysteresis B HYS Magnetic Offset Unit T J Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. 4 C 23.1 27.4 31.1 19.9 23.8 27.2 2.9 3.6 3.9 2.6 2 C 23.1 26.8 3.4 19.9 23.2 26.6 2.8 3. 3.9 21. 2 28. 14 C 21.7 2.7 29.2 18.6 22.4 2.6 2.6 3.3 3.8 24 17 C 21.3 2.4 28.9 18.3 22.1 2.3 2. 3.3 3.8 23.7 The hysteresis is the difference between the switching points B HYS = The magnetic offset is the mean value of the switching points SET = ( + ) / 2 34 Micronas
DATA SHEET HAL9 3 HAL 9 3 HAL 9 max 3 3 max typ 2 2 typ 2 2 min min 1 1 1 T A = 4 C T A =2 C T A =1 C T A =17 C 1 = 3.8 V = 4. V...24 V 1 1 2 2 3 V 1 1 2 C Fig. 4 3: Typ. magnetic switching points T A, T J Fig. 4 32: Magnetic switching points versus temperature 3 HAL 9 Note: In the diagram Magnetic switching points versus temperature the curves for min, max, min, and max refer to junction temperature, whereas typical curves refer to ambient temperature. 3 2 2 1 1 T A = 4 C T A =2 C T A =1 C T A =17 C 3 3. 4. 4... 6. V Fig. 4 31: Typ. magnetic switching points Micronas 3
HAL16 DATA SHEET 4.9. HAL16 The HAL 16 is the most sensitive unipolar switching sensor with an inverted output of this family (see Fig. 4 33). The output turns high with the magnetic south pole on the branded side of the package and turns low if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. Applications The HAL16 is the optimal sensor for all applications with one magnetic polarity and weak magnetic amplitude at the sensor position where an inverted output signal is required such as: applications with large airgap or weak magnets, solid state switches, contactless solution to replace micro switches, position and end point detection, and rotating speed measurement. In the HALxx family, the HAL6 is a sensor with the same magnetic characteristics but with a normal output characteristic. Output Voltage V O Magnetic Features: switching type: unipolar inverted high sensitivity typical : 3. at room temperature typical :. at room temperature operates with static magnetic fields and dynamic magnetic fields up to 1 khz typical temperature coefficient of magnetic switching points is 1 ppm/k V OL B HYS Fig. 4 33: Definition of magnetic switching points for the HAL16 B Magnetic Characteristics at T J = 4 C to +17 C, = 3.8 V to 24 V, Typical Characteristics for = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter On point Off point Hysteresis B HYS Magnetic Offset Unit T J Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. 4 C 2.1 3.8.4 4.3.9 7.7 1.6 2.1 2.8 4.8 2 C 2 3. 3.8. 7.2 1. 2 2.7 3.8 4. 6.2 14 C 1.8 3.1.1 3.4 4.8 6.9 1 1.7 2.6 4 17 C 1.7 3.2 3.2 4.6 6.8.9 1.6 2.6 3.8 The hysteresis is the difference between the switching points B HYS = The magnetic offset is the mean value of the switching points SET = ( + ) / 2 36 Micronas
DATA SHEET HAL16 8 HAL 16 8 HAL 16 7 7 max 6 6 max typ 4 4 min 3 2 1 T A = 4 C T A =2 C T A =1 C T A =17 C 3 2 1 min = 3.8 V = 4. V...24 V typ 1 1 2 2 3 V 1 1 2 C Fig. 4 34: Typ. magnetic switching points T A, T J Fig. 4 36: Magnetic switching points versus temperature 8 HAL 16 Note: In the diagram Magnetic switching points versus temperature the curves for min, max, min, and max refer to junction temperature, whereas typical curves refer to ambient temperature. 7 6 4 3 2 1 T A = 4 C T A = 2 C T A = 1 C T A = 17 C 3 3. 4. 4... 6. V Fig. 4 3: Typ. magnetic switching points Micronas 37
HAL17 DATA SHEET 4.1. HAL 17 The HAL 17 is a unipolar switching sensor with inverted output (see Fig. 4 37). The output turns high with the magnetic south pole on the branded side of the package and turns low if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. Magnetic Features: switching type: unipolar inverted medium sensitivity typical on point is 16.2 at room temperature typical off point is 18.3 at room temperature operates with static magnetic fields and dynamic magnetic fields up to 1 khz typical temperature coefficient of magnetic switching points is 17 ppm/k Applications The HAL 17 is the optimal sensor for applications with one magnetic polarity where an inverted output signal is required such as: solid state switches, contactless solution to replace micro switches, position and end point detection, and rotating speed measurement. Output Voltage V OL B HYS Fig. 4 37: Definition of magnetic switching points for the HAL17 V O B Magnetic Characteristics at T J = 4 C to +17 C, = 3.8 V to 24 V, Typical Characteristics for = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter On point Off point Hysteresis B HYS Magnetic Offset Unit T J Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. 4 C 14 17.1 21. 1. 19.6 22. 1.6 2. 3 18.3 2 C 13. 16.2 19 1 18.3 2.7 1. 2.1 2.7 14 17.2 2 14 C 1 13.2 18.2 11. 14.8 2.2 1 1.6 2.6 14 17 C 9 12.3 18 1. 13.7 2.8 1.4 2.4 13 The hysteresis is the difference between the switching points B HYS = The magnetic offset is the mean value of the switching points SET = ( + ) / 2 38 Micronas
DATA SHEET HAL17 2 HAL 17 2 HAL 17 2 2 max max 1 1 typ typ 1 T A = 4 C T A =2 C T A =1 C T A =17 C 1 min = 3.8 V = 4. V...24 V min 1 1 2 2 3 V 1 1 2 C Fig. 4 38: Typ. magnetic switching points T A, T J Fig. 4 4: Magnetic switching points versus temperature 2 HAL 17 Note: In the diagram Magnetic switching points versus ambient temperature the curves for min, max, min, and max refer to junction temperature, whereas typical curves refer to ambient temperature. 2 1 1 T A = 4 C T A =2 C T A =1 C T A =17 C 3 3. 4. 4... 6. V Fig. 4 39: Typ. magnetic switching points Micronas 39
HAL18 DATA SHEET 4.11. HAL 18 The HAL 18 is a unipolar switching sensor with inverted output (see Fig. 4 41). The output turns high with the magnetic south pole on the branded side of the package and turns low if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. Applications The HAL 18 is the optimal sensor for applications with one magnetic polarity where an inverted output signal is required such as: solid state switches, contactless solution to replace micro switches, position and end point detection, and rotating speed measurement. In the HALxx family, the HAL8 is a sensor with the same magnetic characteristics but with a normal output characteristic. Magnetic Features: Output Voltage B HYS V O switching type: unipolar inverted medium sensitivity typical : 16 at room temperature typical : 18 at room temperature operates with static magnetic fields and dynamic magnetic fields up to 1 khz typical temperature coefficient of magnetic switching points is 1 ppm/k V OL Fig. 4 41: Definition of magnetic switching points for the HAL18 B Magnetic Characteristics at T J = 4 C to +17 C, = 3.8 V to 24 V, Typical Characteristics for = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter On point Off point Hysteresis B HYS Magnetic Offset Unit T J Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. 4 C 14 16.7 2 1. 19 22 1. 2.3 3 17.8 2 C 13. 16 19 1 18 2.7 1.4 2 2.8 14 17 2 14 C 11.7 14.1 18. 13 1.8 2.2.9 1.7 2.7 1 17 C 11 13.6 18.3 12.2 1.3 2.8 1.7 2.6 14.4 The hysteresis is the difference between the switching points B HYS = The magnetic offset is the mean value of the switching points SET = ( + ) / 2 4 Micronas
DATA SHEET HAL18 2 HAL 18 2 HAL 18 2 2 max max 1 1 T A = 4 C T A =2 C T A =1 C T A =17 C 1 1 min = 3.8 V = 4. V...24 V typ typ min 1 1 2 2 3 V 1 1 2 C Fig. 4 42: Typ. magnetic switching points T A, T J Fig. 4 44: Magnetic switching points versus temperature 2 HAL 18 Note: In the diagram Magnetic switching points versus temperature the curves for min, max, min, and max refer to junction temperature, whereas typical curves refer to ambient temperature. 2 1 1 T A = 4 C T A = 2 C T A = 1 C T A = 17 C 3 3. 4. 4... 6. V Fig. 4 43: Typ. magnetic switching points Micronas 41
HAL19 DATA SHEET 4.12. HAL 19 The HAL19 is a very sensitive unipolar switching sensor with an inverted output sensitive only to the magnetic north polarity. (see Fig. 4 4). The output turns high with the magnetic north pole on the branded side of the package and turns low if the magnetic field is removed. The sensor does not respond to the magnetic south pole on the branded side, the output remains low. For correct functioning in the application, the sensor requires only the magnetic north pole on the branded side of the package. Magnetic Features: switching type: unipolar inverted, north sensitive high sensitivity typical : 3. at room temperature typical :. at room temperature operates with static magnetic fields and dynamic magnetic fields up to 1 khz typical temperature coefficient of magnetic switching points is 1 ppm/k Applications The HAL19 is the optimal sensor for all applications with the north magnetic polarity and weak magnetic amplitude at the sensor position where an inverted output signal is required such as: solid state switches, contactless solution to replace micro switches, position and end point detection, and rotating speed measurement. V O B HYS Output Voltage V OL Fig. 4 4: Definition of magnetic switching points for the HAL19 B Magnetic Characteristics at T J = 4 C to +17 C, = 3.8 V to 24 V, Typical Characteristics for = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter On point Off point Hysteresis B HYS Magnetic Offset Unit T J Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. 4 C.4 3.8 2.1 7.7.9 4.3 1.6 2.1 2.8 4.8 2 C 3.6 2 7.2. 3.8 1. 1.9 2.7 6.2 4. 3.8 14 C.1 3.1 1.7 6.8 4.8 3.1 1 1.7 2.6 4 17 C.2 3 1. 6.8 4.6 2.8.9 1.6 2.6 3.8 The hysteresis is the difference between the switching points B HYS = The magnetic offset is the mean value of the switching points SET = ( + ) / 2 42 Micronas
DATA SHEET HAL19 HAL 19 T A = 4 C = 3.8 V HAL 19 1 2 T A = 2 C T A = 1 C T A = 17 C 1 2 = 4. V...24 V max 3 3 typ 4 4 max min 6 6 typ 7 7 min 8 1 1 2 2 3 V 8 1 1 2 C Fig. 4 46: Typ. magnetic switching points T A, T J Fig. 4 48: Magnetic switching points versus temperature 1 2 HAL 19 T A = 4 C T A = 2 C T A = 1 C T A = 17 C Note: In the diagram Magnetic switching points versus temperature the curves for min, max, min, and max refer to junction temperature, whereas typical curves refer to ambient temperature. 3 4 6 7 8 3 3. 4. 4... 6. V Fig. 4 47: Typ. magnetic switching points Micronas 43
HAL23 DATA SHEET 4.13. HAL 23 The HAL 23 is the least sensitive unipolar switching sensor of this family (see Fig. 4 49). The output turns low with the magnetic south pole on the branded side of the package and turns high if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. Magnetic Features: switching type: unipolar low sensitivity typical : 34. at room temperature typical : 24 at room temperature operates with static magnetic fields and dynamic magnetic fields up to 1 khz Applications The HAL 23 is the optimal sensor for applications with one magnetic polarity and strong magnetic fields at the sensor position such as: solid state switches, contactless solution to replace micro switches, position and end point detection, and rotating speed measurement. Output Voltage V O B HYS V OL Fig. 4 49: Definition of magnetic switching points for the HAL23 B Magnetic Characteristics at T J = 4 C to +17 C, = 3.8 V to 24 V, Typical Characteristics for = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter On point Off point Hysteresis B HYS Magnetic Offset Unit T J Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. 4 C 28 34. 42 18 24 3 7 1. 14 29.3 2 C 28 34. 42 18 24 3 7 1. 14 29.3 14 C 28 34. 42 18 24 3 7 1. 14 29.3 17 C 28 34. 42 18 24 3 7 1. 14 29.3 The hysteresis is the difference between the switching points B HYS = The magnetic offset is the mean value of the switching points SET = ( + ) / 2 44 Micronas
DATA SHEET HAL23 4 HAL 23 4 max HAL 23 4 3 4 3 typ 3 3 max 2 2 min typ 2 2 1 1 T A = 4 C T A = 2 C T A = 1 C T A = 17 C 1 1 min = 3.8 V = 4. V...24 V 1 1 2 2 3 V 1 1 2 C Fig. 4 : Typ. magnetic switching points T A, T J Fig. 4 2: Magnetic switching points versus temperature 4 HAL 23 Note: In the diagram Magnetic switching points versus temperature the curves for min, max, min, and max refer to junction temperature, whereas typical curves refer to ambient temperature. 4 3 3 2 2 1 1 T A = 4 C T A = 2 C T A = 1 C T A = 17 C 3 3. 4. 4... 6. V Fig. 4 1: Typ. magnetic switching points Micronas 4
HALxx DATA SHEET. Application Notes WARNING: DO NOT USE THESE SENSORS IN LIFE- SUPPORTING SYSTEMS, AVIATION, AND AEROSPACE APPLICATIONS!.1. Ambient Temperature Due to the internal power dissipation, the temperature on the silicon chip (junction temperature T J ) is higher than the temperature outside the package (ambient temperature T A ). T J = T A + T Under static conditions and continuous operation, the following equation applies: T = I DD * * R th For all sensors, the junction temperature range T J is specified. The maximum ambient temperature T Amax can be calculated as: T Amax = T Jmax T For typical values, use the typical parameters. For worst case calculation, use the max. parameters for I DD and R th, and the max. value for from the application..2. Extended Operating Conditions All sensors fulfill the electrical and magnetic characteristics when operated within the Recommended Operating Conditions (see page 12). Supply Voltage Below 3.8 V Typically, the sensors operate with supply voltages above 3 V, however, below 3.8 V some characteristics may be outside the specification. Note: The functionality of the sensor below 3.8 V is not tested on a regular base. For special test conditions, please contact Micronas..3. Start-up Behavior Due to the active offset compensation, the sensors have an initialization time (enable time t en(o) ) after applying the supply voltage. The parameter t en(o) is specified in the Electrical Characteristics (see page 13). During the initialization time, the output state is not defined and the output can toggle. After t en(o), the output will be low if the applied magnetic field B is above. The output will be high if B is below. In case of sensors with an inverted switching behavior (HAL 16... HAL19), the output state will be high if B > and low if B <. Note: For magnetic fields between and, the output state of the HAL sensor will be either low or high after applying. In order to achieve a defined output state, the applied magnetic field must be above, respectively, below..4. EMC and ESD For applications with disturbances on the supply line or radiated disturbances, a series resistor and a capacitor are recommended (see figures 1). The series resistor and the capacitor should be placed as closely as possible to the HAL sensor. Applications with this arrangement passed the EMC tests according to the product standards DIN 4839. Note: The international standard ISO 7637 is similar to the product standard DIN 4839. Please contact Micronas for the detailed investigation reports with the EMC and ESD results. V EMC V P R V 22 Ω 4.7 nf 1 OUT 3 R L 1.2 kω 2 pf 2 GND Fig. 1: Test circuit for EMC investigations 46 Micronas