SGB-6433(Z) Vbias RFOUT

Similar documents
= 35 ma (Typ.) Frequency (GHz)

Frequency (GHz) 5000 MHz

SGA2386ZDC to 5000MHz, Cascadable. SiGe HBT. MMIC Amplifier. Frequency (GHz) 2800 MHz >10dB 97 C/W

SGA4586Z DC to 4000MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER

NOT FOR NEW DESIGNS SGA5386Z. Absolute Maximum Ratings MHz. Parameter Rating Unit. Typical Performance at Key Operating Frequencies

Gain and Return Loss versus Frequency (w/ BiasTees) 25 C 25 C 25 C. Frequency (GHz)

SGA3363Z. = 35 ma (Typ.) Frequency (GHz) T L MHz >10dB 255 C/W

CGA-6618Z Dual CATV 5MHz to 1000MHz High Linearity GaAs HBT Amplifier CGA-6618Z DUAL CATV 5MHz to 1000MHz HIGH LINEARITY GaAs HBT AMPLIFIER Package: E

SGA7489Z DC to 3000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK

Typical IP3, P1dB, Gain. 850 MHz 1960 MHz 2140 MHz 2450 MHz

Gain and Return Loss vs Frequency. s22. Frequency (GHz)

SGA2463Z. Frequency (GHz) 18.0 dbm 1950MHz. 7.2 dbm 1950 MHz 255 C/W

RF3375 GENERAL PURPOSE AMPLIFIER

SGA2363ZDC to 5000MHz, Cascadable. SiGe HBT. MMIC Amplifier. Frequency (GHz) 5000 MHz >10dB

CGB-1089Z. 50MHz to 1000MHz SINGLE ENDED InGaP/GaAs HBT MMIC CATV AMPLIFIER. Features. Product Description. Applications

SXA-3318B(Z) 400MHz to 2500MHz BALANCED ½ W MEDIUM POWER GaAs HBT AMPLIFIER. Product Description. Features. Applications

V S. RF Out / V S. Specification (V S =3V) Specification (V S =4V) Min. Typ. Max. Min. Typ. Max.

SZM-3066Z. 3.3GHz to 3.8GHz 2W POWER AMPLIFIER. Product Description. Features. Applications. Package: QFN, 6mmx6mm

SBB MHz to 6000MHz InGaP HBT ACTIVE BIAS GAIN BLOCK. Features. Product Description. Applications

Amplifier Configuration

Amplifier Configuration

SZA-5044(Z) 4.9GHz to 5.9GHz 5V POWER AMPLIFIER. Features. Product Description. Applications. Package: QFN, 4mmx4mm

Typical Gmax, OIP3, 5V,270mA 42 OIP3. 30 P1dB Frequency (GHz)

RF2044A GENERAL PURPOSE AMPLIFIER

RF3857 DUAL CHANNEL LNA WITH BYPASS MODE

SGL0363Z. 5MHz to 2000MHz Low Noise Amplifier. Germanium. Simplified Device Schematic. Vpc. Narrow-band Matching Network. Gnd

Product Description. Ordering Information. GaAs HBT GaAs MESFET InGaP HBT

RF V LOW NOISE AMPLIFIER/ 3V DRIVER AMPLIFIER

RF5623 SINGLE 5.0V, 3.3 TO 3.8 GHZ LINEAR POWER AMPLIFIER

RF2044 GENERAL PURPOSE AMPLIFIER

RF V TO 5.0V, 3.3GHz TO 3.8GHz LINEAR POWER AMPLIFIER

RF5633 SINGLE 5.0V, 3.3 TO 3.8GHZ LINEAR POWER AMPLIFIER

Product Description. Ordering Information. GaAs HBT GaAs MESFET InGaP HBT

RF5632 SINGLE 5.0V, 2.3 TO 2.7 GHZ LINEAR POWER AMPLIFIER

Absolute Maximum Ratings Parameter Rating Unit Max Input Power, OFDM Modulated, 3:1 Load VSWR +39 dbm Max Input Power, 2:1 VSWR +41 dbm ESD HBM Rating

Not For New Design FMS W GaAs phemt SPDT SWITCH. Product Description. Features. Applications

RFPA TO 5 V PROGRAMMABLE GAIN HIGH EFFICIENCY POWER AMPLIFIER

RF2126 HIGH POWER LINEAR AMPLIFIER

RF2418 LOW CURRENT LNA/MIXER

Product Description. GaAs HBT GaAs MESFET InGaP HBT

RF3376 General Purpose Amplifier

RF2162 3V 900MHz LINEAR AMPLIFIER

SBB-3089Z Pb MHz InGaP HBT Active Bias Gain Block

FMS W GaAs WIDEBAND SPDT SWITCH. Features. Product Description. Applications

RFIN 2 GND. Product Description. Ordering Information. GaAs HBT GaAs MESFET. InGaP HBT

SZM-5066Z 5.0V, 5GHz HIGH POWER LINEAR POWER AMPLIFIER

Stage 3 Bias. Detector

Simplified Device Schematic. Pin 18. Pin 8. Pin 16. Stage 1 Bias. Stage 2 Bias. Pin 10

Specification Min. Typ. Max.

RFPA GHz TO 5.9GHz 2W InGaP AMPLIFIER

Absolute Maximum Ratings Parameter Rating Unit V D1, V D2, V D3 +8 V V G 0 V Junction Temperature C Continuous P DISS (T = ) C/W (derate 37 mw/ C abov

RFGA0024. InGaP HBT. 1000MHz. Product Description. Ordering Information

VCC1 GND IN GND LOP LON GND GND. Product Description. GaAs HBT GaAs MESFET InGaP HBT

Preliminary C0.25 VDD N/C RF1 N/C N/C. Product Description. Ordering Information

LNA In. Input Match. LNA Vref. LNA Sel. RX Switch. TX Switch GND. PA Vcc2 GND GND. PA Out. Product Description. GaAs HBT GaAs MESFET InGaP HBT

NLB-310. Cascadable Broadband GaAs MMIC Amplifier DC to 10GHz

VC1. Input Match RF IN. Product Description. Ordering Information. Standard 25 piece bag Standard 2500 piece reel. GaAs HBT GaAs MESFET InGaP HBT

RFVA1017 ANALOG CONTROLLED VARIABLE GAIN AMPLIFIER

Product Description. Ordering Information. GaAs HBT GaAs MESFET InGaP HBT

RF1 RF2 RF3 RF4. Product Description. Ordering Information. GaAs MESFET Si BiCMOS Si CMOS

Product Description. Ordering Information. GaAs MESFET Si BiCMOS

RF1226 BROADBAND MEDIUM POWER DIFFERENTIAL SPDT SWITCH

RF1136 BROADBAND LOW POWER SP3T SWITCH

VCC GND RF IN. Product Description. Ordering Information. GaAs HBT GaAs MESFET InGaP HBT

RF3394 GENERAL PURPOSE AMPLIFIER

VCC RF IN. Input Match VREG. Product Description. Ordering Information. Standard 25 piece bag Standard 2500 piece reel. GaAs HBT GaAs MESFET InGaP HBT

RDA1005L DIGITAL CONTROLLED VARIABLE GAIN AMPLIFIER 50 MHZ TO 4000 MHZ, 6 BIT

SGA-6489 SGA-6489Z Pb

RF1200 BROADBAND HIGH POWER SPDT SWITCH

dbm Output Power at 1dB Compression 3.6GHz

NLB-310. RoHS Compliant & Pb-Free Product. Typical Applications

SBB-1089 SBB-1089Z MHz, Cascadable Active Bias InGaP/GaAs HBT MMIC Amplifier

RF2334. Typical Applications. Final PA for Low Power Applications Broadband Test Equipment

RFDA0045 DIGITAL CONTROLLED VARIABLE GAIN AMPLIFIER 10MHZ TO 850MHZ

SBB-5089Z GHz, Cascadable Active Bias InGaP HBT MMIC Amplifier

RF5187. RoHS Compliant & Pb-Free Product Typical Applications. 2.14GHz UMTS Systems. PCS Communication Systems Digital Communication Systems

GND GND GND. Product Description. Ordering Information. Sample bag with 25 pieces 7 Sample reel with 100 pieces. GaAs MESFET Si BiCMOS Si CMOS Si BJT

RF2436 TRANSMIT/RECEIVE SWITCH

RF V TO 3.6V, 2.4GHz FRONT END MODULE

RF7234 3V TD-SCDMA/W-CDMA LINEAR PA MODULE BAND 1 AND 1880MHz TO 2025MHz

Absolute Maximum Ratings Parameter Rating Unit Drain Voltage (V D ) 150 V Gate Voltage (V G ) -8 to +2 V Gate Current (I G ) 8 ma Operational Voltage

I REF Q REF GND2 GND2 GND2 VCC1. Product Description. Ordering Information. GaAs HBT GaAs MESFET InGaP HBT

RFPA2013 Application Note

RF V TO 4.2V, 2.4GHz FRONT END MODULE

RF V TO 4.2V, 2.4GHz FRONT-END MODULE

RFDA0035 DIGITAL CONTROLLED IF DUAL VGA 5 BIT 1dB LSB CONTROL

50 MHz to 4.0 GHz RF/IF Gain Block ADL5602

RF V, SWITCH AND LNA FRONT END SOLUTION

Product Description. Ordering Information. Optimum Technology Matching Applied GaAs HBT GaAs MESFET InGaP HBT

SZA-2044 / SZA-2044Z GHz 5V 1W Power Amplifier

DATA GND VCC GND RF1 GND GND GND. Product Description. Ordering Information. Sample bag with 25 pieces 7 Sample reel with 100 pieces

30 MHz to 6 GHz RF/IF Gain Block ADL5611

CGA-6618 CGA-6618Z Pb

20 MHz to 500 MHz IF Gain Block ADL5531

BBQN VCC VEE RFP RFN VEE BBIN

RFVC1800 Wideband MMIC VCO with Buffer Amplifier 8GHz to 12GHz

RFG1M MHZ to 1000MHZ 180W GaN RFG1M MHZ TO 1000MHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features Advanced

RFPA V 2.4GHz to 2.5GHz Matched Power Amplifier

VCC RF IN. Input Match VREG. Product Description. Ordering Information. Standard 25 piece bag Standard 2500 piece reel. GaAs HBT GaAs MESFET InGaP HBT

20 MHz to 6 GHz RF/IF Gain Block ADL5542

Transcription:

SGB-6433(Z) DC to 3.5GHz ACTIVE BIAS GAIN BLOCK RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: 3x3 QFN, 16-Pin Product Description RFMD s SGB-6433 is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 5V supply the SGB-6433 does not require a drop resistor as compared to typical Darlington amplifiers. This robust amplifier features a Class 1C ESD rating, low thermal resistance, and unconditional stability. The SGB-6433 product is designed for high linearity 5V gain block applications that require small size and minimal external components. It is on chip matched to 50Ω and an external bias inductor choke is required for the application band. Optimum Technology Matching Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs phemt Si CMOS Si BJT GaN HEMT RF MEMS RFIN VCC GND Active Bias Vbias RFOUT Features High Reliability SiGe HBT Technology Robust Class 1C ESD Simple and Small Size P 1dB =18.5dBm at 1950MHz IP 3 =31dBm at 1950MHz Low Thermal Resistance=60C/W Applications 5V Applications LO Buffer Amp RF Pre-Driver and RF Receive Path Parameter Specification Min. Typ. Max. Unit Condition Small Signal Gain 20.0 db 850MHz 14.5 16.0 17.5 db 1950MHz 15.0 db 2400MHz Output Power at 1dB Compression 18.5 dbm 850MHz 16.5 18.5 dbm 1950MHz 17.5 dbm 2400MHz Output Third Order Intercept Point 33.0 db 850MHz 28.5 31.0 db 1950MHz 31.0 db 2400MHz Noise Figure 4.1 5.1 db 1950MHz Frequency of Operation DC 3500 MHz Current 76 88 98 ma Input Return Loss 12.0 15.0 db 1950MHz Output Return Loss 8.5 11.5 db 1950MHz Thermal Resistance 60 C/W junction to backside Test Conditions: Z 0 =50Ω, V CC =5V, I C =88mA, T=30 C RF MICRO DEVICES, RFMD, Optimum Technology Matching, Enabling Wireless Connectivity, PowerStar, POLARIS TOTAL RADIO and UltimateBlue are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. 2006, RF Micro Devices, Inc. 7628 Thorndike Road, Greensboro, 27409-9421 For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 1 of 8

Absolute Maximum Ratings Parameter Rating Unit Current (l C total) 150 ma Max Device Voltage (V D ) 6.5 V Max RF Input Power 20 dbm Power Dissipation 0.75 W Max Junction Temperature (T J ) 150 C Operating Temperature Range (T L ) -40 to + 85 C Max Storage Temperature -40 to +150 C Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: I D V D <(T J -T L )/R TH, j-l Detailed Performance Table: V CC =5V, I C =88mA, T=25 C, Z=50Ω Parameter Unit 100 500 850 1950 2400 MHz MHz MHz MHz MHz Small Signal Gain (G) db 21.2 20.7 20.0 16.0 15.0 12.3 Output 3rd Order Intercept Point (OIP 3 ) dbm 34.0 33.0 31.0 31.0 Output Power at 1dB Compression (P 1dB ) dbm 18.9 18.5 18.5 17.5 Simplified Device Schematic Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 3500 MHz Input Return Loss (IRL) db 43.6 33.3 25.6 15.0 13.8 9.7 Output Return Loss (ORL) db 15.8 13.9 12.2 11.5 10.2 11.3 Reverse Isolation (S 12 ) db 24.4 24.6 25.0 24.4 23.8 22.5 Noise Figure (NF) db 5.1 3.6 3.6 4.1 4.6 5.2 1 2 3 4 16 15 14 Active Bias 13 12 11 10 9 5 6 7 8 7628 Thorndike Road, Greensboro, 27409-9421 For sales or technical 2 of 8 support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

Evaluation Board Data (V CC =V BIAS =5.0V, I C =88mA) Bias Tee substituted for DC feed inductor (L1) 24.0 Gain vs Frequency 36.0 OIP3 vs. Frequency 22.0 34.0 Gain (db) P1dB (dbm) Ic (ma) 20.0 18.0 16.0 14.0 12.0 0.4 0.9 1.4 1.9 2.4 P1dB vs. Frequency Noise Figure vs. Frequency 20.0 19.0 18.0 17.0 16.0 15.0 14.0 0.4 0.9 1.4 1.9 2.4 0.120 0.100 0.080 0.060 0.040 Ic vs. Temperature Noise Figure (db) Ic (A) 22.0 0.4 0.9 1.4 1.9 2.4 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.140 0.120 0.100 0.080 0.060 0.040 Current vs. Voltage OIP3 (dbm) 32.0 30.0 28.0 26.0 24.0 0.020 0.000 Temperature 0.020 0.000 4.4 4.6 4.8 5.0 5.2 5.4 5.6 5.8 6.0 6.2 Vc (Volts) 7628 Thorndike Road, Greensboro, 27409-9421 For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 3 of 8

Evaluation Board Data (V CC =V BIAS =5.0V, I C =88mA) Bias Tee substituted for DC feed inductor (L1) cont 0.0 l S 11 l vs. Frequency 30.0 l S 21 l vs. Frequency S11 (db) S12 (db) -5.0-10.0-15.0-20.0-25.0-30.0-35.0-40.0-45.0-50.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 l S 12 l vs. Frequency -18.0 0.0-20.0-5.0-22.0-24.0-26.0-28.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 S21 (db) S22 (db) 25.0 20.0 15.0 10.0 5.0 0.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0-10.0-15.0 l S 22 l vs. Frequency -20.0-25.0-30.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7628 Thorndike Road, Greensboro, 27409-9421 For sales or technical 4 of 8 support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

Pin Function Description 1, 2, These are no connect pins. Leave them unconnected on the PC board. 4, 6, 7, 8, 11, 12, 14 3 RF IN RF input pin. A DC voltage should not be connected externally to this pin 5 GND An extra ground pin that is connected to the backside exposed paddle. Connection is optional. 10 RF OUT RF Output pin. Bias is applied to the Darlington stage thru this pin. 13 VBIAS This pin sources the current from the active bias circuit. Connect to pin 10 thru an inductor choke. 16 VCC This is Vcc for the active bias circuit. Backside GND The backside exposed paddle is the main electrical GND and requires multiple vias in the PC board to GND. Itis also the main thermal path. 1.58 [0.062] 0.75 [0.030] Recommended Land Pattern Dimensions in millimeters (inches) 0.005 CHAMFER (8PL) 1.58 [0.062] 0.50 [0.020] 0.26 [0.010] 0.38 [0.015] 0.29 [0.011] 0.21 [0.008] Ø0.38 [Ø0.015] Plated Thru (4PL) Recommended PCB Soldermask for Land Pattern 0.50 [0.020] 0.25 [0.010] 0.53 [0.021] 3.17 [0.125] 1.20 [0.047] 0.46 [0.018] 1.20 [0.047] 7628 Thorndike Road, Greensboro, 27409-9421 For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 5 of 8

Package Drawing Dimensions in millimeters (inches) Refer to drawing posted at www.rfmd.com for tolerances. C4 RFIN Typical Evaluation Board Schematic for 3.0V C3 RFIN VCC Vcc Vbias RFOUT L1 RFOUT C1 GND Option C2 7628 Thorndike Road, Greensboro, 27409-9421 For sales or technical 6 of 8 support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

Evaluation Board Layout and Bill of Materials C4 Board material GETEK, 31mil thick, Dk=4.2, 1oz copper Component Values By Band Designator 500MHz 850MHz 1950MHz 2400MHz C3 1000pF 1000pF 1000pF 1000pF C4* 1uF 1uF 1uF 1uF C1, C2 220pF 68pF 43pF 22pF L1 68nH 33nH 22nH 18nH *C4 is optional depending on application and filtering. Not required for SGB device operation. Note: The amplifier can be run from a 8V supply by simply inserting a 33Ω resistor in series with V CC. C1 C3 Part Identification The part will be symbolized with an SGB6433 for Sn/Pb plating or SGB64Z for RoHS green compliant product. Marking designator will be on the top surface of the package. Ordering Information C2 Part Number Reel Size Devices/Reel L1 SGB-6433 13 3000 SGB-6433Z 13 3000 7628 Thorndike Road, Greensboro, 27409-9421 For sales or technical 7 of 8 support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

7628 Thorndike Road, Greensboro, 27409-9421 For sales or technical 8 of 8 support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.