TD-SCDMA and TDD-LTE Solution

TD-SCDMA and TDD-LTE Solution FTF-NET-F0479 Song Di China RF Application Manager Laurence Li China RF Marketing M A Y. 2 0 1 4 TM External Use

Agenda TD-SCDMA and TDD-LTE Evolution Overview Solutions Recommendation Typical Performance Update External Use 1

Radio Frequency Why Customers Choose Us We pioneered RF technology and continue to be the leader with high-quality, high-performance products using the latest technologies Applications Market leadership / scale Best-in-class performance in linear efficiency, gain, bandwidth and power Fully optimized reference designs Long-term customer relationships Customers Wireless Network Infrastructure Macro, Metro & small cellular basestations Digital front end Broadcast, Industrial/Scientific/Medical UHF & VHF broadcast TV FM & shortwave radio CO 2 lasers, plasma generation, MRI Enterprise Access Points, Professional Mobile Radio Converged cellular / wifi Public safety, dispatch, transportation, marine Aerospace / Defense Radar Air traffic management Jammers Market Leadership #1 High Power RF Transistors for Wireless Infrastructure (1) Products Airfast RF Platform RF Power ICs External Use 2 Source: (1) ABI Research, December 2012

TD-SCDMA and TDD LTE evolution in China Since the beginning of TD-SCDMA deployment in CMCC, Phase 1~ 5 had been deployed till 2012 Phase 6~7 has been evolved into TD-LTE including frequency band F+A, D and E since 2013 Multiband and wide signal bandwidth are being used for high data traffic With three of China operators deploying TDD-LTE base station this year, especially from CMCC, TDD-LTE base station will be the significant part in 4G base station Whether it would last in following years or how it evolve in future? External Use 3

TDSCDMA F+A Solutions recommendation Application Band F+A Outdoor/Medium power 8*15W/20W Band F+A Indoor/High power 2*40W Driver AFT27S006N AFT27S010N Suggested Line Ups AFT20S015N/2*AFT27S006N Final MRF8P20140WHS AFT20P140-4WS 2*MRF8P20140WHS 2*AFT20P140-4WS 2.3/2.6GHz TD-LTE Solutions Application Band E (2.3GHz) Indoor/High Power 2*40W Band D (2.6GHz) Indoor/High Power 2*40W Band D (2.6GHz) Outdoor/Medium Power 8*10W/8*15W 2.6GHz Small Cells Low Power 5W Driver 2*AFT20S015N 2*AFT27S010N 2*AFT20S015N 2*AFT27S010N 2*AFT27S006N AFT20S010N AFT27S006N Suggested Line Ups Final AFT23H200-4S2L 2*AFT23S160WS/23S170S AFT26H200W03S AFT26H250-24S 2*AFT26H160 AFT26P100-4WS AFT26H160-4S4 AFT26HW050S External Use 4

Inter-modulation Distortion AFT20P140-4WS Main Solution For TDSCDMA Market High evbw inside to enable 160MHz VBW Support 145MHz SBW Cost effective with OMNI package OM-780 Package evbw Included Launch = March, 2013 Performance Overview: Frequency band: 1880MHz 2025MHz P3dB > 52.3dBm >17dB Drain Efficiency @ 43.8dBm = 41% P out = 43.8 dbm, 1C W-CDMA, PAR=10.3dB @ CCDF=0.01% Freq (MHz) Pout (dbm) Adj-L Adj-U PAR Eff (%) 1880 43.80 17.78-31.33-31.35 7.96 41.81 1960 43.80 17.91-34.10-33.89 8.14 41.95 2025 43.80 17.82-34.18-34.48 8.01 41.47-20 -25-30 -35-40 -45-50 -55-60 IM3-L IM3-U IM5-L IM5-U Inter-modulation Distortion vs. Tone Spacing Freescale Semiconductor -65 1 10 100 Tone Spacing (MHz) External Use 5

Inter-modulation Distortion AFT26H160-4S4 High High Efficiency (HiP) Support 100MHz SBW Main Solution For TDD-LTE Market NI-880XS extra-lead Launch = May, 2013 Performance Overview: Frequency band: 2530MHz 2630MHz P3dB ~ 53.1dBm(VDD=28V), >16.1dB Efficiency@45.0dBm =42.4%~44.1% [*] VDD=28V, Idq=0.6A, Vpeak=0.7V Freq Pout Adj-L Adj-U PAR (MHz) (dbm) Eff (%) Id (A) 2530 44.989 16.333-33.54-33.52 7.821 44.116 2.551 2580 44.995 16.41-35.21-35.62 7.756 43.683 2.579 2630 44.993 16.154-38.27-39.23 7.756 42.43 2.654 1C W-CDMA, PAR=10.3dB @ CCDF=0.01% -20-25 -30-35 -40-45 -50-55 Inter-modulation Distortion vs. Tone Spacing IM3-L IM3-U IM5-L IM5-U IM7-L IM7-U Freescale Semiconductor -60 1 10 100 Tone Spacing (MHz) External Use 6

Line-up Demo with Shield MMZ25332B+AFT20S015GN+AFT26H160-4S4 MMZ25332B AFT20S015GN AFT26H160-4S4 RN2 RCP250Q1P5 Rogers 4350 20mil PCB HTD HYH103DZ0.0 Performance Overview: Frequency band: 2496 MHz 2690MHz P1dB ~ 51.6 dbm, P3dB ~ 52.8dBm > 52dB, Efficiency@44.5 dbm >35.5% Turn-key Solution Excellent performance 3-stage demo with compact size Shield and Isolator added Close to real application P out = 44.5 dbm, 1C W-CDMA, PAR=10.3dB @ CCDF=0.01% Freq (MHz) Pout (dbm) Adj-L Adj-U PAR Eff (%) 2496 44.502 53.221-31.55-32.01 8.109 35.585 2530 44.504 52.701-33.14-33.19 8.365 35.96 2590 44.505 52.259-33.88-33.6 8.494 35.946 2630 44.497 52.231-34.16-33.85 8.494 36.027 2690 44.491 52.61-35.3-34.87 8.173 35.658 External Use 7

Inter-modulation Distortion AFT23H200-4S2L High power and efficiency Cost effective (one device solution) Performance Overview: Frequency band: 2300MHz 2400MHz P1dB > 55dBm,P3dB > 55.8dBm (30V) >15.4dB Drain Efficiency @ 47.8dBm(8dB OBO)= 46~47% Vd = 30.0V, Idq=0.8A, Vpeak = 0.6 V Freq (MHz) Pout (dbm) Adj-L Adj-U PAR Eff (%) 2300 47.806 15.482-32.11-31.59 7.885 47.222 2350 47.786 15.814-35.2-34.54 7.917 46.504 2400 47.811 15.941-36.71-35.76 7.885 46.333 Inter-modulation Distortion & vs. Tone Spacing -20 15.95-25 -30 15.55-35 NI-1230 extra-lead Launch = March, 2013-40 -45-50 IM3-L IM3-U IM5-L IM5-U IM7-L IM7-U 15.15 14.75-55 -60 14.35-65 Freescale Semiconductor -70 1 10 100 13.95 Tone Spacing (MHz) External Use 8

IMD3, IMD5 and IMD7 AFT26HW050S The Highest 2.6GHz Efficiency in the Industry Compact Size Matching Performance Overview: Frequency band: 2620MHz 2690MHz P3dB ~ 48dBm(VDD=28), ~ 15.5dB Efficiency@ 8 db OBO > 48% P out = 40 dbm, 1C W-CDMA, PAR=10.3dB @ CCDF=0.01% Freq Pout Adj-L Adj-U PAR (MHz) (dbm) Eff (%) 2620 40 15.335-33.41-33.74 7.756 48.332 2655 40 15.551-35.4-35.52 7.853 48.964 2690 40 15.43-36.43-36.72 7.788 48.403 NI-780 extra-lead Final Samples = Feb, 2013 Launch = March, 2013-15 IMD3, IMD5 and IMD7 vs. Tone Spcacing -20-25 -30-35 -40-45 -50-55 -60 0.1 1 Freq (MHz) 10 100 IMD3 _L IMD3 _U External Use 9

Inter-modulation Distortion AFT26P100-4WS evbw inside to enable 150MHz VBW Performance Overview: Frequency band: 2570MHz 2620MHz P1dB ~ 49.5dBm, P3dB ~ 51dBm(VDD=28), ~ 15.5dB Efficiency@42.8dBm (8 db OBO)>44% Efficiency@ 44dBm (7dB OBO) >47% Freq (MHz) Pout (dbm) Adj-L Adj-U Eff (%) Id (A) 2570 42.791 15.437-32.71-32.5 44.338 1.53 2595 42.817 15.483-33.19-33.44 44.773 1.524 2620 42.798 15.504-33.66-33.69 44.411 1.53 Inter-modulation Distortion & vs. Tone Spacing -25 15.6-30 15.2 NI-780 Package evbw Included Launch = March, 2013-35 -40-45 150MHz VBW 14.8 14.4 14-50 -55-60 IM3-L IM3-U IM5-L IM5-U IM7-L IM7-U 13.6 13.2 12.8 Freescale Semiconductor -65 1 10 100 Tone Spacing (MHz) 12.4 External Use 10

Inter-modulation Distortion AFT26H200W03S evbw inside to enable 220MHz VBW Performance Overview: Frequency band: 2595MHz 2655MHz P1dB > 53dBm, P3dB > 54.5dBm(VDD=30V), > 15.0dB Drain Efficiency @ 46.5dBm(8dB OBO)= 44% P out = 46.5 dbm, 1C W-CDMA, PAR=10.3dB @ CCDF=0.01% Freq (MHz) Adj-L Adj-U PAR Eff (%) 2595 15.037-33.14-32.93 7.885 45.452 2625 15.073-34.15-34.8 7.853 44.842 2655 14.977-35.26-35.13 7.821 43.876 Inter-modulation Distortion & vs. Tone Spacing -25 15.24-30 14.84 NI-1230 evbw Launch = June, 2013-35 -40-45 IM3-L IM3-U IM5-L IM5-U IM7-L IM7-U 14.44 14.04 13.64-50 13.24-55 12.84-60 12.44 Freescale Semiconductor -65 1 10 100 Tone Spacing (MHz) 12.04 External Use 11

Inter-modulation Distortion AFT26H250-24S High power Support 80MHz SBW Cost effective (one device solution) Performance Overview: Frequency band: 2620MHz 2690MHz P1dB > 53.5dBm, P3dB > 55dBm > 15.0dB Drain Efficiency @ 47.5dBm(8dB OBO)= 41% ** All above performance is with circulator NI-1230-4L2L Launch = Nov, 2013-20 Inter-modulation Distortion vs. Tone Spacing -30-40 P out = 47.5 dbm, 1C W-CDMA, PAR=10.3dB @ CCDF=0.01% Freq (MHz) Pout (dbm) Adj-L Adj-U Alt1-L Eff (%) 2620 47.491 15.128-35.88-36.27-52.56 42.464 2655 47.507 15.205-36.69-36.51-52.67 41.509 2690 47.5 15.24-37.01-37.02-53.28 41.099-50 -60 IM3-L IM3-U -70 IM5-L IM5-U IM7-L IM7-U Freescale Semiconductor -80 1 10 100 Tone Spacing (MHz) External Use 12

AFT27S006N Broadband High Low Cost 720-820MHz 1805-1880MHz 2110-2170MHz PLD1.5-W Final Sample= Aug, 2013 Launch = Sep, 2013 Across from720mhz to 2690MHz P-1>38dBm >19.5dB Vdd=28V, Idq=60mA Freq (MHz) Pout (dbm) Adj-L Adj-U PAR Eff (%) 720 30 22.2-39.5-39.1 9.1 26.1 770 30 22.8-42.6-42.8 9.0 24.5 820 30 22.7-41.1-41.7 9.0 22.7 1805 29.6 22.3-38.9-39.3 9.4 22.5 1842.5 29.6 22.5-42.7-42.9 9.1 22.7 1880 29.6 22.0-45.3-45.3 9.0 22.91 2110 29.7 22.0-41.7-42.0 9.0 20.9 2140 29.7 22.1-43.1-43.1 9.0 21.3 2170 29.7 22.1-45.2-44.8 9.0 21.7 2496 29 19.6-43.3-43.1 9.7 19.0 2590 29 20.3-41.2-40.8 9.3 19.3 2690 29 19.6-40.1-40.1 9.1 19.3 External Use 13

AFT27S010N Broadband High Low Cost Across from 720MHz to 2690MHz P-1>40dBm >18.5dB 2496-2690MHz PLD1.5-W Mature Sample= July, 2013 Launch = Dec, 2013 Vdd=28V, Idq=80mA Freq (MHz) Pout (dbm) Adj-L Adj-U PAR Eff (%) 2496 31 18.5-44.0-44 9.4 18.9 2530 31 19.0-44.5-44.3 9.4 18.9 2580 31 19.3-44.2-43.8 9.4 19.2 2630 31 19.3-43.7-43.1 9.3 19.3 2690 31 19.0-44.0-44.3 9.0 19.3 1805 31.8 22.1-42.5-42.9 9.2 21.2 1845 31.8 22.0-42.8-42.9 9.1 21.6 1880 31.8 21.7-43.3-42.9 9.1 22.1 870 31.3 22.7-43.6-43.6 9.0 22.4 820 31.3 22.5-45.0-44.6 9.1 20.7 960 31.3 22.1-44.7-44.9 9.1 20.7 External Use 14

AFT20S015N Broadband High Low Cost Across from 1805MHz to 2690MHz P-3>42dBm >16dB with very excellent gain flatness Vdd=28V, Idq=120mA Freq (MHz) Pout (dbm) Adj-L Adj-U PAR Eff (%) 1805 35.8 18.2-35.6-35.2 7.4 32.8 1845 35.8 18.2-35 -34.5 7.1 33.5 1880 35.8 18.0-34.1-34.2 7.0 33.9 2300 35.5 17.2-35.6-35.6 7.2 31.7 2350 35.5 17.2-35.2-34.9 7.1 31.6 2400 35.5 17.2-34.4-33.9 7.0 31.6 TO- 270-2 Launch = April, 2013 2496 35.5 16.1-36.44-36.04 7.3 29.1 2530 35.5 16.3-35.55-36.1 7.2 30.0 2580 35.5 16.4-34.79-34.92 7.1 30.3 2630 35.5 16.5-34.51-34.94 6.9 31.2 2690 35.5 16.4-33.86-33.69 6.6 31.2 External Use 15

RF Cellular 2.6GHz LTE Line-up 20W 2496-2690MHz PA Solution Pre-Driv er ADAM Driver Doherty Final MMZ25332B MMDS25254H AFT27S006N AFT26H160 2-stage driver amplifier 5V GaAs QFN 3x3 33 dbm peak power : 27 db Advanced Doherty Alignment Module 5V QFN 6x6 Doherty coupler together with digitally selectable phase shifters and step attenuators for improved Doherty performance Wideband transistor 28V LDMOS PLD-1.5W package 6W peak output power Average power of 28.8dBm : 21 db Drain Efficiency: 21% Asymmetric in-package Doherty device 28V LDMOS NI-880XS-4L4S package 160W peak power Average power of 32W : 15 db Drain Efficiency: 45.5% External Use 16

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