General Description The MDD1752 uses advanced MagnaChip s trench MOSFET Technology to provide high performance in onstate resistance, switching performance and reliability Low, low gate charge can be offering superior benefit in the application. MDD1752 N-Channel Trench MOSFET 4V, 5A, 8.mΩ Features Applications G = 4V = 5A @ = 1V < 8.mΩ @ = 1V < 1.5mΩ @ = 4.5V Inverters General purpose applications D S Absolute Maximum Ratings (T C =25 o C unless otherwise noted) Characteristics Symbol Rating Unit Drain-Source Voltage S 4 V Gate-Source Voltage S ±2 V Continuous Drain Current (Note 2) T C=25 o C (a) 5 A =25 o C (b) 15.2 A Pulsed Drain Current M 1 A Power Dissipation for Single Operation T C=25 o C 45 =25 o C Single Pulse Avalanche Energy (Note 3) E AS 153 mj Junction and Storage Temperature Range T J, T stg -55~+15 P D 3.1 W o C Thermal Characteristics Characteristics Symbol Rating Unit Thermal Resistance, Junction-to-Ambient (Note 1) R θja 4 Thermal Resistance, Junction-to-Case R θjc 2.8 o C/W 1
Ordering Information Part Number Temp. Range Package Packing RoHS Status MDD1752RH -55~15 o C TO-252 Tape & Reel Halogen Free Electrical Characteristics (T J =25 o C unless otherwise noted) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BS = 25µA, = V 4 - - V Gate Threshold Voltage (th) =, = 25µA 1. 1.7 3. Zero Gate Voltage Drain Current SS = 32V, = V - - 1 µa Gate Leakage Current I GSS = ±2V, = V - -.1 Drain-Source ON Resistance = 1V, = 14A - 6.1 8. mω = 4.5V, = 11A - 8.2 1.5 Forward Transconductance g FS = 5V, = 14A - 58 - S Dynamic Characteristics Total Gate Charge Q g - 26.4 - Gate-Source Charge Q gs = 2V, = 14A, = 1V - 3.6 - nc Gate-Drain Charge Q gd - 6.8 - Input Capacitance C iss - 148 - Reverse Transfer Capacitance C rss = 2V, = V, f = 1.MHz - 113 - pf Output Capacitance C oss - 243 - Turn-On Delay Time t d(on) - 9 - Turn-On Rise Time t r = 1V, = 2V, = 1A, - 21 - ns Turn-Off Delay Time t R GEN = 6Ω d(off) - 31 - Turn-Off Fall Time Drain-Source Body Diode Characteristics t f - 18 - Source-Drain Diode Forward Voltage V SD I S = 14A, = V -.8 1.2 V Body Diode Reverse Recovery Time t rr I F = 14A, di/dt = 1A/µs - 26 - ns Body Diode Reverse Recovery Charge - 11 - nc Q rr Note : 1. Surface mounted RF4 board with 2oz. Copper. 2. P D is based on T J(MAX)=15 C a. P D (T C=25 C) is based on R θjc, b. P D (=25 C) is based on R θja 3. Starting T J=25 C, L=1mH, I AS=17.5A, V DD=4V, =1V 2
, (Normalized) Drain-Source On-Resistance 1 8 6 4 2 1.6 1.4 1.2 1..8 = 1V Notes : 1. = 1 V 2. = 14 A 4.5V 6.V 5.V..5 1. 1.5 2. 2.5 4.V, Drain-Source Voltage [V] Fig.1 On-Region Characteristics 3.5V 3.V Normalized Drain-Source On-Resistance [mω ], Drain-Source On-Resistance 3. 2.8 2.6 2.4 2.2 2. 1.8 1.6 1.4 1.2 1..8.6 2 4 6 8 1 2. 17.5 15. 12.5 1. 7.5 = 3V 3.5V 4.5V Fig.2 On-Resistance Variation with Drain Current and Gate Voltage = 125 = 25 5.V 4.V 6.V 1V.6-5 -25 25 5 75 1 125 15 T J, Junction Temperature [ o C] Fig.3 On-Resistance Variation with Temperature 5. 2 4 6 8 1, Gate to Source Volatge [V] Fig.4 On-Resistance Variation with Gate to Source Voltage 1 8 6 4 2 Notes : = 5V =125 25-55 R, Reverse Drain Current [A] 1 3 1 2 1 1 1 1-1 1-2 1-3 Notes : = V =125 25-55 1. 1.5 2. 2.5 3. 3.5 4. 4.5, Gate-Source Voltage [V] 1-4.2.4.6.8 1. 1.2 V SD, Source-Drain voltage [V] Fig.5 Transfer Characteristics Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 3
, Gate-Source Voltage [V] 1 8 6 4 2 1 3 1 2 1 1 1 1-1 Note : I = 14A D = 2V 1V 1 2 3 4 Fig.7 Gate Charge Characteristics Operation in This Area is Limited by R DS(on) 3V Q G, Total Gate Charge [nc] 1 ms 1 ms 1s DC Single Pulse R thja =96 /W =25 1 ms 1 µs Capacitance [F] 8.p 4.p I (AS), AVALANCHE CURRENT (A) 2.n 1.6n 1.2n. 1 2 3 4 1 1 C rss C oss C iss, Drain-Source Voltage [V] C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd Fig.8 Capacitance Characteristics T J =25 Notes ; 1. = V 2. f = 1 MHz 1-2 1-1 1 1 1 1 2, Drain-Source Voltage [V] Fig.9 Maximum Safe Operating Area 1.1 1 1 t AV, TIME IN AVALANCHE (ms) Fig.1 Unclamped Inductive Switching Capability 7 1 D=.5 6 5 4 3 2 Z θ JA (t), Thermal Response 1-1 1-2.2.1.5.2.1 single pulse Notes : Duty Factor, D=t 1 /t 2 PEAK T J = P DM * Z θ JA * R θ JA (t) + R Θ JA =96 /W 1 25 5 75 1 125 15 T C, Case Temperature [ ] 1-3 1-4 1-3 1-2 1-1 1 1 1 1 2 1 3 t 1, Rectangular Pulse Duration [sec] Fig.11 Maximum Drain Current vs. Case Temperature Fig.12 Transient Thermal Response Curve 4
P(pk), Peak Transient Power [W] 1 8 6 4 2 Single Pulse R Θ JA =96 /W =25 1E-3.1.1 1 1 1 1 T 1, Time [sec] Fig13. Single Pulse Maximum Power Dissipation I(pk), Peak Transient Current [A] 5 4 3 2 1 1E-3.1.1 1 1 1 1 T 1, Time [sec] Single Pulse R Θ JA =96 /W =25 Fig14. Single Pulse Maximum Peak Current 5
Physical Dimensions 2 Leads, DPAK (TO252) Dimensions are in millimeters unless otherwise specified 6
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