APTGSBRDQ(G) APTGSSRDQ(G) V, A, (ON) =.8V Typical Thunderbolt High Speed NPT IGBT with Anti-Parallel 'DQ' Diode The Thunderbolt HS series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt series, but trades higher (ON) for signifi cantly lower turn-on energy E off. The low switching losses enable operation at switching frequencies over khz, approaching power MOSFET performance but lower cost. An extremely tight parameter distribution combined with a positive (ON) temperature coeffi cient make it easy to parallel Thunderbolts HS D PAK IGBT's. Controlled slew rates result in very good noise and oscillation immunity and low EMI. The short circuit duration rating of μs make these IGBT's suitable for motor drive and inverter applications. Reliability is further enhanced by avalanche energy ruggedness. Combi versions are packaged with a high speed, soft recovery DQ series diode. APTGSBRDQ(G) Features Typical Applications APTGSSRDQ(G) TO-7 Fast Switching with low EMI Very Low E OFF for Maximum Efficiency Short circuit rated Low Gate Charge Tight parameter distribution Easy paralleling RoHS Compliant ZVS Phase Shifted and other Full Bridge Half Bridge High Power PFC Boost Welding Induction heating High Frequency SMPS Single die IGBT with separate DQ diode die Absolute Maximum Ratings Symbol Parameter Rating Unit Continuous Collector Current T C = @ C 9 Continuous Collector Current T C = @ C M Pulsed Collector Current 9 A Gate-Emitter Voltage ±V V SSOA Switching Safe Operating Area 9 E AS Single Pulse Avalanche Energy mj t SC Short Circut Withstand Time μs Diode Continuous Forward Current T C = C 9 T C = C RM Diode Max. Repetitive Forward Current 9 Thermal and Mechanical Characteristics Symbol Parameter Min Typ Max Unit P D Total Power Dissipation T C = @ C W R θjc Junction to Case Thermal Resistance IGBT. Diode.7 R θcs Case to Sink Thermal Resistance, Flat Greased Surface., T STG Operating and Storage Junction Temperature Range - T L Soldering Temperature for Seconds (.mm from case) W T Torque Package Weight Mounting Torque (TO-7), - M Screw A C/W C. oz.9 g CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should be Followed. Microsemi Website - http://www.microsemi.com in lbf. N m - Rev B -
Static Characteristics = C unless otherwise specified APTGSB_SRDQ(G) Symbol Parameter Test Conditions Min Typ Max Unit V BR(CES) Collector-Emitter Breakdown Voltage = V, =.ma V V BR(CES) / Breakdown Voltage Temperature Coeff Reference to C, =.ma. V/ C (ON) Collector-Emitter On Voltage = V = C.8. = A. V EC Diode Forward Voltage = A = C. V.8 (th) Gate-Emitter Threshold Voltage =, = ma (th) / Threshold Voltage Temp Coeff.7 mv/ C V ES Zero Gate Voltage Collector Current CE = V, = C = V μa I GES Gate-Emitter Leakage Current = ±V ± na - Rev B - Dynamic Characteristics Symbol Parameter Test Conditions Min Typ Max Unit g fs Forward Transconductance = V, = A S C ies Input Capacitance C = V, = V oes Output Capacitance f = MHz C res Reverse Transfer Capacitance pf C o(cr) C o(er) Reverse Transfer Capacitance Charge Related = C unless otherwise specified = V = to V Reverse Transfer Capacitance Current Related 8 Q g Total Gate Charge Q = to V ge Gate-Emitter Charge 8 nc = A, = V G gc Gate-Collector Charge t d(on) Turn-On Delay Time t r Rise Time Inductive Switching IGBT and t d(off) Turn-Off Delay Time Diode: ns t f Fall Time 7 = C, V CC = V, E on Turn-On Switching Energy 7 = A TBD E on Turn-On Switching Energy 8 =.7Ω, V GG = V. mj E off Turn-Off Switching Energy 9.7 t d(on) Turn-On Delay Time t r Rise Time Inductive Switching IGBT and Diode: t d(off) Turn-Off Delay Time ns t f Fall Time, V CC = V, E = A on Turn-On Switching Energy 7 =.7Ω TBD, V GG = V E on Turn-On Switching Energy 8.7 mj E off Turn-Off Switching Energy 9.9 t rr Diode Reverse Recovery Time = A ns Q rr Diode Reverse Recovery Charge = V nc I rrm Peak Reverse Recovery Current di F /dt = A/μs A
C, CAPACITANCE ( P F), COLLECTOR-TO-EMITTER VOLTAGE (V) 7 (ON), COLLECTER-TO-EMITTER VOLTAGE (V), COLLECTER-TO-EMITTER VOLTAGE (V) FIGURE, Output Characteristics FIGURE, Output Characteristics 7 8 8, GATE-TO-EMITTER VOLTAGE (V), GATE-TO-EMITTER VOLTAGE (V) FIGURE, Transfer Characteristics FIGURE, On State Voltage vs Gate-to- Emitter Voltage 7, Junction Temperature ( C) GATE CHARGE (nc) FIGURE, On State Voltage vs Junction Temperature FIGURE, Gate Charge = V μs PULSE TEST<. % DUTY CYCLE = C = A = A = C = A = C = V. μs PULSE TEST <. % DUTY CYCLE C ies C oes C res 7, COLLECTOR-TO-EMITTER VOLTAGE (V) T C, CASE TEMPERATURE ( C) FIGURE 7, Capacitance vs Collector-To-Emitter Voltage FIGURE 8, DC Collector Current vs Case Temperature, DC COLLECTOR CURRENT(A), GATE-TO-EMITTER VOLTAGE (V), COLLECTOR-TO-EMITTER VOLTAGE (V) 7 7 8 9 8 7 = A = A = V = V APTGSB_SRDQ(G) = & V V = A V 9V 8V 7V V = C. μs PULSE TEST <. % DUTY CYCLE = 8V - Rev B -
APTGSB_SRDQ(G) - Rev B -, TURN-ON DELAY TIME (ns) SWITCHING ENERGY LOSSES mj) E ON, TURN ON ENERGY LOSS (μj) t r, RISE TIME (ns) t d(on) 8 8 8 8 E E FIGURE 9, Turn-On Delay Time vs Collector Current FIGURE, Turn-Off Delay Time vs Collector Current 8 8 8 E E FIGURE, Current Rise Time vs Collector Current FIGURE, Current Fall Time vs Collector Current 8 8 E E FIGURE, Turn-On Energy Loss vs Collector Current FIGURE, Turn Off Energy Loss vs Collector Current 8 = V = C, = C =.7Ω L = μh = V = +V =.7Ω = V =.7Ω, L = μh, = V = or C, = V = V = +V, =V = C, =V E on, A E off, A E on, A E on, A E off, A E off, A E off, A E on, A E on, A E off, A 7, GATE RESISTANCE (OHMS), JUNCTION TEMPERATURE ( C) FIGURE, Switching Energy Losses vs. Gate Resistance FIGURE, Switching Energy Losses vs Junction Temperature, TURN-OFF DELAY TIME (ns) SWITCHING ENERGY LOSSES (mj) E OFF, TURN OFF ENERGY LOSS (μj) t f, FALL TIME (ns) t d (OFF) 8 7 =V, = C = V =.7Ω L = μh = V = +V =.7Ω = V = +V =.7Ω E on, A =V, = C =.7Ω, L = μh, = V = C, = V, = V = C, = V, = V E off, A
APTGSB_SRDQ(G) M M (on) μs μs ms ms ms DC line (on) = C T C = C μs μs ms ms ms DC line Scaling for Different Case & Junction Temperatures: = (TC = C) *( - T C )/ T C = 7 C. 8. 8, COLLECTOR-TO-EMITTER VOLTAGE (V), COLLECTOR-TO-EMITTER VOLTAGE (V) Figure 7, Forward Safe Operating Area Figure 8, Maximum Forward Safe Operating Area. Z θjc, THERMAL IMPEDANCE ( C/W)......9.7.... SINGLE PULSE Duty Factor D = t /t. Peak = P DM x Z θjc + T C - - - - -. RECTANGULAR PULSE DURATION (SECONDS) Figure 9, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration Note: P DM t t F MAX, OPERATING FREQUENCY (khz) 8 T C = 7 C D = % = V =.7Ω 7 C C 7 8 9 Figure, Operating Frequency vs Collector Current F max = min (f max, f max ). f max = t d(on) + t r + t d(off) + t f f max = P diss = P diss - P cond E on + E off - T C R θjc - Rev B -
APTGSB_SRDQ(G) APTDQ Gate Voltage % t d(on) t r Collector Current V CC % 9% % % Collector Voltage A Switching Energy D.U.T. Figure, Inductive Switching Test Circuit Figure, Turn-on Switching Waveforms and Definitions Gate Voltage 9% t d(off) 9% Collector Voltage t f % Collector Current Switching Energy Figure, Turn-off Switching Waveforms and Definitions FOOT NOTE: - Rev B - Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. Short circuit time: = V, V CC V, C Pulse test: Pulse width < 8μs, duty cycle < % C o(cr) is defi ned as a fi xed capacitance with the same stored charge as C oes with = 7% of V (BR)CES. C o(er) is defi ned as a fi xed capacitance with the same stored energy as C oes with = 7% of V (BR)CES. To calculate C o(er) for any value of less than V (BR)CES, use this equation: C o(er) =.7E-8/V DS^ + 7.E-8/V DS +.7E-. 7 is external gate resistance, not including internal gate resistance or gate driver impedance (MIC). 8 E on is the inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on switching loss. It is measured by clamping the inductance with a Silicon Carbide Schottky diode. 9 E on is the inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on energy. Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD-. Microsemi reserves the right to change, without notice, the specifications and information contained herein.
MAXIMUM RATINGS ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE STATIC ELECTRICAL CHARACTERISTICS DYNAMIC CHARACTERISTICS All Ratings: T C = C unless otherwise specifi ed. Symbol Characteristic / Test Conditions APTGSBRDQ(G) Unit (AV) Maximum Average Forward Current (T C = C, Duty Cycle =.) (RMS) RMS Forward Current (Square wave, % duty) SM Non-Repetitive Forward Surge Current ( = C, 8. ms) Symbol Characteristic / Test Conditions Min Type Max Unit V F Forward Voltage = A.8. = A. = A,. Symbol Characteristic Test Conditions Min Typ Max Unit I t Reverse Recovery Time F = A, di F /dt = -A/μs, - rr - = V, = C ns t Reverse Recovery Time - rr - = A, di F /dt = -A/μs Q Reverse Recovery Charge - rr - nc = 7V, T C = C Maximum Reverse Recovery Current - - Amps t Reverse Recovery Time - rr - ns = A, di F /dt = -A/μs Q Reverse Recovery Charge - rr - nc = 7V, T C Maximum Reverse Recovery Current - 9 - Amps t Reverse Recovery Time - rr 8 - ns = A, di F /dt = -A/μs Q Reverse Recovery Charge - rr 97 - nc = 8V, T C Maximum Reverse Recovery Current - 8 - Amps Amps Volts.9 Z θjc, THERMAL IMPEDANCE ( C/W).8.7.....`. D =.9.7.... SINGLE PULSE Duty Factor D = t /t Peak = P DM x Z θjc + T C - - - - -. RECTANGULAR PULSE DURATION (seconds) FIGURE. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION Note: P DM t t - Rev B -
Q rr, REVERSE RECOVERY CHARGE, FORWARD CURRENT (nc) (A) 8 8 = 8V 8 V F, ANODE-TO-CATHODE VOLTAGE (V) -di F /dt, CURRENT RATE OF CHANGE(A/μs) Figure. Forward Current vs. Forward Voltage Figure. Reverse Recovery Time vs. Current Rate of Change = 8V = 7 C A A = C = - C A, REVERSE RECOVERY CURRENT t rr, REVERSE RECOVERY TIME (A) (ns) = 8V A A APTGSB_SRDQ(G) A A A A - Rev B - 8 8 -di F /dt, CURRENT RATE OF CHANGE (A/μs) -di F /dt, CURRENT RATE OF CHANGE (A/μs) Figure 7. Reverse Recovery Charge vs. Current Rate of Change Figure 8. Reverse Recovery Current vs. Current Rate of Change C J, JUNCTION CAPACITANCE K f, DYNAMIC PARAMETERS (pf) (Normalized to A/μs)...8. t rr Q rr t rr Duty cycle =. = 7 C. Q rr.. 7 7 7, JUNCTION TEMPERATURE ( C) Case Temperature ( C) Figure 9. Dynamic Parameters vs. Junction Temperature Figure. Maximum Average Forward Current vs. CaseTemperature 8 8, REVERSE VOLTAGE (V) Figure. Junction Capacitance vs. Reverse Voltage (AV) (A)
APTGSB_SRDQ(G) V r +8V di F /dt Adjus t APT78BLL V D.U.T. μh t rr /Q rr Wavefor m PEARSON 878 CURRENT TRANSFORMER Figure. Diode Test Circuit - Forward Conduction Current di F /dt - Rate of Diode Current Change Through Zero Crossing. - Maximum Reverse Recovery Current. Zer o t rr - Revers e R ecovery Time, measured from zero crossing wher e diode current goes from positive to negative, to the point at which the straight line through and. passes through zero.. Q rr - Area Under the Curve Defined by and t rr. Figure. Diode Reverse Recovery Waveform Defi nitions TO-7 Package Outline e SAC: Tin, Silver, Copper D Pak Package Outline e SAC: Tin, Silver, Copper Collector (Cathode).9 (.8). (.9).9 (.9).9 (.98). (.).79 (.).8 (.89). (.8). (.) BSC. (.77) Max. 9.8 (.78). (.8). (.). (.). (.87).9 (.). (.) BSC -Plcs. Dimensions in Millimeters and (Inches ).9 (.). (.).8 (.). (.). (.8).8 (.).87 (.). (.). (.). (.8) Gate Collector (Cathode) Emitter (Anode) Drai n (Heat Sink).98 (.9).8 (.).7 (.8).7 (.). (.8) { Plcs}. (.). (.).78 (.7).7 (.).8 (.). (.8). (.).9 (.8).(.) Revised /8/9.7 (.). (.).98 (.78).8 (.8). (.) BSC { Plcs. }. (.).(.).79 (.).99(.) Emitter (Anode) Collector (Cathode) Gate Dimensions in Millimeters (Inches). (.8).(.) Revised 8/9/97.8 (.). (.) (Base of Lead). (.). (.7) Heat Sink (Collector) and Leads (Cathode) are Plated - Rev B -