FSW25N5A N-Channel MOSFET Applications: Uninterruptible Power Supply(UPS) LCD Panel Power SMPS Power DC-AC Inverter FSW25N5 RoHS Compliant Low ON Resistance Low Gate Charge Peak Current vs Pulse Width Curve ESD Capability Improved Ordering Information PART NUMBER PACKAGE BRAND FSW25N5A TO-3PN FSW25N5A Pb Lead Free Package and Finish V DSS R DS(ON) (Typ.) I D 5V.18 25A G D S TO-3PN Not to Scale Absolute Maximum Ratings T C =25 o C unless otherwise specified Symbol Parameter FSW25N5A Units V DSS Drain-to-Source Voltage (NOTE *1) 5 V I D Continuous Drain Current 25 I D @ 1 o C Continuous Drain Current Figure 3 A I DM Pulsed Drain Current, @ 1V (NOTE *2) Figure 6 Power Dissipation 23 W P D Derating Factor above 25 o C 1.84 W/ o C Gate-to-Source Voltage ± 3 V E AS Single Pulse Avalanche Engergy L=1mH 25 mj I AS Pulsed Avalanche Rating Figure 8 dv/dt Peak Diode Recovery dv/dt (NOTE *3) 5. V/ns VESD(G-S) Gate to Source ESD:HBM_C=1pF,R=1.5K 6 V T L T PKG Maximum Temperature for Soldering Leads at.63in (1.6mm) from Case for 1 seconds Package Body for 1 seconds T J and T STG Operating Junction and Storage Temperature Range -55 to 15 *Drain Current limited by Maximum Junction Temperature. Caution: Stresses greater than those listed in the Absolute Maximum Ratings Table may cause permanent damage to the device. Thermal Resistance Symbol Parameter FSW25N5A Units Test Conditions R JC Junction-to-Case.54 Water cooled heatsink, PD adjusted for o C/W a peak junction temperature of +15 o C. R JA Junction-to-Ambient 62 1 cubic foot chamber, free air. 3 26 o C 211 InPower Semiconductor Co., Ltd. Page 1 of 9
OFF Characteristics TJ=25 o C unless otherwise specified BV DSS Drain-to-Source Breakdown Voltage 5 -- -- V =V, I D =25μA BV DSS / T J BreakdownVoltage Temperature Coefficient, Figure 11. --.6 -- V/ o C Reference to 25 o C, I D =25μA -- -- 1 V DS =5V, =V I DSS Drain-to-Source Leakage Current μa V -- -- 25 DS =4V, =V T J =125 o C Gate-to-Source Forward Leakage -- -- +1 V I GS =+3V GSS ua Gate-to-Source Reverse Leakage -- -- -1 = -3V ON Characteristics TJ=25 o C unless otherwise specified R Static Drain-to-Source On-Resistance V DS(ON) --.18.26 GS =1V, I D =1A Figure 9 and 1. (NOTE *4) (TH) Gate Threshold Voltage, Figure 12. 2. -- 4. V V DS =, I D =25 A gfs Forward Transconductance -- 24 -- S V DS =15V, I D =1A (NOTE *4) Dynamic Characteristics Essentially independent of operating temperature C iss Input Capacitance -- 49 -- =V C oss Output Capacitance -- 41 -- V DS =25V pf f=1.mhz C rss Reverse Transfer Capacitance -- 44 -- Figure 14 Q g Total Gate Charge -- 96 -- VDD=25V Q gs Gate-to-Source Charge -- 18 -- nc I D=2A =1V Q gd Gate-to-Drain ( Miller ) Charge -- 41 -- Figure 15 Resistive Switching Characteristics Essentially independent of operating temperature t d(on) Turn-on Delay Time -- 53 -- =25V t rise Rise Time -- 117 -- I D =2A ns t d(off) Turn-Off Delay Time -- 37 -- =1V t fall Fall Time -- 138 -- R G =25 211 InPower Semiconductor Co., Ltd. Page 2 of 9
Source-Drain Diode Characteristics Tc=25 o C unless otherwise specified I S Continuous Source Current (Body Diode) -- -- 25 A Integral pn-diode I SM Maximum Pulsed Current (Body Diode) -- -- 1 A in MOSFET V SD Diode Forward Voltage -- -- 1.5 V I S =2A, =V t rr Reverse Recovery Time -- 558 -- ns =V Q rr Reverse Recovery Charge -- 6.1 -- μc I F =2A, di/dt=1 A/μs Notes: *1. T J = +25 o C to +15 o C. *2. Repetitive rating; pulse width limited by maximum junction temperature. *3. I SD = 2A di/dt < 1 A/μs, < BV DSS, T J =+15 o C. *4. Pulse width < 38μs; duty cycle < 2%. 211 InPower Semiconductor Co., Ltd. Page 3 of 9
Duty Factor Figure 1. Maximum Effective Thermal Impedance, Junction-to-Case 1. 5% Z JC, Thermal Impedance (Normalized).1.1 2% 1% 5% 2% 1% single pulse P DM t 1 t 2 NOTES: DUTY FACTOR: D=t1/t2 PEAK T J =P DM x Z JC x R JC +T C.1 1E-5 1E-4 1E-3 1E-2 1E-1 1E+ 1E+1 t p, Rectangular Pulse Duration (s) Figure 2. Maximum Power Dissipation Figure 3. vs Case Temperature Maximum Continuous Drain Current vs Case Temperature 25 25 P D, Power Dissipation (W) 2 15 1 5 I D, Drain Current (A) 2 15 1 5 25 5 75 1 125 15 25 5 75 1 125 15 T C, Case Temperature ( o C) T C, Case Temperature ( o C) Figure 4. Typical Output Characteristics Figure 5. Typical Drain-to-Source ON Resistance vs Gate Voltage and Drain Current I D, Drain Current (A) 75 6 45 3 15 PULSE DURATION = 25 μs DUTY FACTOR =.5% MAX T C = 25 o C VGS = 15V VGS = 6.V =5.5V VGS = 5.25V VGS = 5.V VGS = 4.5V RDS(ON), Drain-to-Source ON Resistance ( 1.5 1.25 1..75.5.25 I D = 2A I D = 1A PULSE DURATION = 25 μs DUTY FACTOR =.5% MAX T C = 25 o C 5 1 15 2 25 3 4 5 6 7 8 9 1 11 12 13 14 15 V DS, Drain-to-Source Voltage (V), Gate-to-Source Voltage (V) 211 InPower Semiconductor Co., Ltd. Page 4 of 9
1 TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION Figure 6. Maximum Peak Current Capability FOR TEMPERATURES ABOVE 25 o C DERATE PEAK CURRENT AS FOLLOWS: I DM, Peak Current (A) 1 1 = -------------------- 1 VGS = 1V 1E-6 1E-6 1E-6 1E-3 1E-3 1E-3 1E+ 1E+ t p, Pulse Width (s) Figure 7. Typical Transfer Characteristics Figure 8. Unclamped Inductive Switching Capability I D, Drain-to-Source Current (A) 45 37.5 3 22.5 15 7.5 PULSE DURATION = 25 μs DUTY CYCLE =.5% MAX VDS = 1 V +15 o C +25 o C -55 o C 2.5 3. 3.5 4. 4.5 5. 5.5 6. 6.5 I AS, Avalanche Current (A) 1 1. 1. STARTING T J = 15 o C If R= : t AV = (L I AS )/(1.3BV DSS - ) If R : t AV = (L/R) ln[i AS R)/(1.3BV DSS - )+1] STARTING T J = 25 o C R equals total Series resistance of Drain circuit 1. 1E-6 1E-6 1E-6 1E-3 1E-3 1E-3, Gate-to-Source Voltage (V) t AV, Time in Avalanche (s) R DS(ON), Drain-to-Source ON Resistance ( ).75.6.45.3.15 Figure 9. Typical Drain-to-Source ON Figure 1. Resistance vs Drain Current PULSE DURATION = 2 μs DUTY CYCLE =.5% MAX TC=25 C = 1V = 2V 5 1 15 2 25 3 R DS(ON), Drain-to-Source Resistance (Normalized) 2.6 2.4 2.2 2. 1.8 1.6 1.4 1.2 1..8.6.4.2 Typical Drain-to-Source ON Resistance vs Junction Temperature PULSE DURATION = 25 μs DUTY CYCLE =.5% MAX = 1V, I D = 1.A -75-5 -25 25 5 75 1 125 15 I D, Drain Current (A) T J, Junction Temperature ( o C) 211 InPower Semiconductor Co., Ltd. Page 5 of 9
BV DSS, Drain-to-Source Breakdown Voltage (Normalized) 1.15 1.1 1.5 1..95.9 Figure 11. Typical Breakdown Voltage vs Figure 12. Junction Temperature = V I D = 25 μa (TH), Threshold Voltage (Normalized) -75-5 -25. 25 5 75 1 125 15-75 -5-25. 25 5 75 1 125 15 1.2 1.1 1..9.8.7 = V DS I D = 25 μa Typical Threshold Voltage vs Junction Temperature T J, Junction Temperature ( o C) T J, Junction Temperature ( o C) Figure 13. Maximum Forward Bias Safe Figure 14. Operating Area Typical Capacitance vs I D, Drain Current (A) 1 1 1 1..1.1 T J = MAX RATED, T C = 25 o C Single Pulse V DS, Drain-to-Source Voltage (V) 1μs 1μs 1.ms 1ms DC C, Capacitance (pf) = V, f = 1MHz C 1 rss C iss = C gs + C gd OPERATION IN THIS AREA MAY C oss C ds + C gd BE LIMITED BY R DS(ON) C rss = C gd 1 1 1 1 1.1 1 1 1 1 1 1 1 V DS, Drain Voltage (V) C iss C oss, Gate-to-Source Voltage (V) 12 1 8 6 4 2 Figure 15. Typical Gate Charge Figure 16. vs Gate-to-Source Voltage V DS = 125V V DS = 25V V DS = 375V 2 4 6 8 1.4.6.8 1. 1.2 1.4 1.6 Q G, Total Gate Charge (nc) I D = 1A I SD, Reverse Drain Current (A) 5 45 4 35 3 25 2 15 1 5 +15 o C +25 o C -55 o C Typical Body Diode Transfer Characteristics V SD, Source-to-Drain Voltage (V) = V 211 InPower Semiconductor Co., Ltd. Page 6 of 9
Test Circuits and Waveforms V DS I D I D V DS Miller Region D.U.T. (TH) 1 ma Q gs Q gd Q g Figure 17. Gate Charge Test Circuit Figure 18. Gate Charge Waveform R L V DS 9% V DS R G D.U.T. 1% t d(on) t rise t d(off) t fall Figure 19. Resistive Switching Test Circuit Figure 2. Resistive Switching Waveforms 211 InPower Semiconductor Co., Ltd. Page 7 of 9
Test Circuits and Waveforms di/dt adj. Current Pump Double Pulse I D di/dt = 1A/μA D.U.T. Q rr L t rr I D Figure 22. Diode Reverse Recovery Waveform Figure 21. Diode Reverse Recovery Test Circuit BV DSS L Series Switch (MOSFET) I AS BV DSS D.U.T. Commutating Diode t AV 5 I AS t p I 2 AS L EAS 2 Figure 23. Unclamped Inductive Switching Test Circuit Figure 24. Unclamped Inductive Switching Waveforms 211 InPower Semiconductor Co., Ltd. Page 8 of 9
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