Ultrafast Rectifier, FRED Pt, 2 x 30 A

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Ultrafast Rectifier, FRED Pt, 2 x 30 FETURES TO-247 Base 2 common cathode node 1 2 node 2 1 ommon 3 cathode Ultrafast recovery time Low forward voltage drop Low leakage current 175 operating junction temperature Designed and qualified according to JEDE -JESD 47 Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 vailable PRODUT SUMMRY Package TO-247 I F(V) 2 x 30 V R 600 V V F at I F 1.1 V t rr typ. 27 ns T J max. 175 Diode variation ommon cathode DESRIPTION / PPLITIONS VS-60PU06... series are the state of the art ultrafast recovery rectifiers designed with optimized performance of forward voltage drop and ultrafast recovery time. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in the output rectification stage of SMPS, welding, UPS, D/D converters as well as freewheeling diodes in low voltage inverters and chopper motor drives. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. BSOLUTE MXIMUM RTINGS PRMETER SYMBOL TEST ONDITIONS VLUES UNITS Repetitive peak reverse voltage V RRM 600 V per leg 30 verage rectified forward current I F(V) per device Rated V R, T = 137 60 Non-repetitive peak surge current per leg I FSM T J = 25 300 Peak repetitive forward current per leg I FM Rated V R, square wave, 20 khz, T = 137 60 Operating junction and storage temperatures T J, T Stg -65 to +175 ELETRIL SPEIFITIONS (T J = 25 unless otherwise specified) PRMETER SYMBOL TEST ONDITIONS MIN. TYP. MX. UNITS Breakdown voltage, blocking voltage V BR, V R I R = 0 μ 600 - - I F = 30-1.31 1.65 Forward voltage V F I F = 30, T J = 150-1.1 1.4 V R = V R rated - 0.02 50 Reverse leakage current I R T J = 150, V R = V R rated - 30 250 µ Junction capacitance T V R = 200 V - 22 - pf Series inductance L S Measured lead to lead 5 mm from package body - 3.5 - nh V Revision: 17-Mar-17 1 Document Number: 94658 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com RE SUBJET TO SPEIFI DISLIMERS, SET FORTH T www.vishay.com/doc?900

Reverse recovery time t rr DYNMI REOVERY HRTERISTIS (T J = 25 unless otherwise specified) PRMETER SYMBOL TEST ONDITIONS MIN. TYP. MX. UNITS T J = 25-42 - ns I F = 1.0, di F /dt = 0 /μs, V R = 30 V - 27 35 T J = 125-1 - Peak recovery current I RRM T J = 25 I F = 30-5 - di F /dt = - 200 /μs T J = 125 V R = 200 V - 11 - T J = 25-1 - Reverse recovery charge Q rr T J = 125-630 - n THERML - MEHNIL SPEIFITIONS (T J = 25 unless otherwise noted) PRMETER SYMBOL TEST ONDITIONS MIN. TYP. MX. UNITS Maximum junction and storage temperature range T J, T Stg -65-175 Thermal resistance, junction to case per leg R thj - 0.6 0.9 Thermal resistance, junction to ambient per leg Thermal resistance, case to heatsink Weight Mounting torque R thj Typical socket mount - - 70 R ths Mounting surface, flat, smooth, and greased - 0.4 - /W - 6.0 - g - 0.22 - oz. Marking device ase style TO-247 60PU06 6.0 (5.0) - 12 () kgf cm (lbf in) I F - Instantaneous Forward urrent () 00 0 T J = 175 T J = 125 T J = 25 1 0.0 0.5 1.0 1.5 2.0 2.5 I R - Reverse urrent (µ) 00 0 1 0.1 0.01 T J = 175 T J = 150 T J = 125 T J = 0 T J = 75 T J = 50 T J = 25 0.001 0 0 200 300 400 500 600 V F - Forward Voltage Drop (V) V R - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop haracteristics Fig. 2 - Typical Values of Reverse urrent vs. Reverse Voltage Revision: 17-Mar-17 2 Document Number: 94658 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com RE SUBJET TO SPEIFI DISLIMERS, SET FORTH T www.vishay.com/doc?900

00 T - Junction apacitance (pf) 0 0 0 200 300 400 500 600 V R - Reverse Voltage (V) Fig. 3 - Typical Junction apacitance vs. Reverse Voltage Z thj - Thermal Impedance ( /W) 1 0.1 D = 0.50 D = 0.20 D = 0. 0.01 D = 0.05 D = 0.02 Single pulse D = 0.01 (thermal resistance). 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t 1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance Z thj haracteristics llowable ase Temperature ( ) 180 160 140 120 Square wave (D = 0.50) Rated V R applied See note (1) D 0 0 0 5 15 20 25 30 35 40 45 0 20 30 40 50 I F(V) - verage Forward urrent () verage Power Loss (W) 60 50 40 30 20 D RMS limit D = 0.01 D = 0.02 D = 0.05 D = 0. D = 0.20 D = 0.50 I F(V) - verage Forward urrent () Fig. 5 - Maximum llowable ase Temperature vs. verage Forward urrent Fig. 6 - Forward Power Loss haracteristics Revision: 17-Mar-17 3 Document Number: 94658 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com RE SUBJET TO SPEIFI DISLIMERS, SET FORTH T www.vishay.com/doc?900

00 000 00 I F = 30, T J = 125 t rr (ns) 0 I F = 30, T J = 125 Q rr (n) I F = 30, T J = 25 0 I F = 30, T J = 25 0 00 di F /dt (/µs) Fig. 7 - Typical Reverse Recovery Time vs. di F /dt Note (1) Formula used: T = T J - (Pd + Pd REV ) x R thj ; Pd = forward power loss = I F(V) x V FM at (I F(V) /D) (see fig. 6); Pd REV = inverse power loss = V R1 x I R (1 - D); I R at V R1 = rated V R 0 00 di F /dt (/µs) Fig. 8 - Typical Stored harge vs. di F /dt V R = 200 V L = 70 μh 0.01 Ω di F /dt adjust G D IRFP250 D.U.T. S Fig. 9 - Reverse Recovery Parameter Test ircuit (3) t rr 0 I F t a tb (2) I RRM (4) Q rr 0.5 I RRM di (rec)m /dt (5) 0.75 I RRM (1) di F /dt (1) di F /dt - rate of change of current through zero crossing (2) I RRM - peak reverse recovery current (3) t rr - reverse recovery time measured from zero crossing point of negative going I F to point where a line passing through 0.75 I RRM and 0.50 I RRM extrapolated to zero current. (4) Q rr - area under curve defined by t rr and I RRM t rr x I Q RRM rr = 2 (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr Fig. - Reverse Recovery Waveform and Definitions Revision: 17-Mar-17 4 Document Number: 94658 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com RE SUBJET TO SPEIFI DISLIMERS, SET FORTH T www.vishay.com/doc?900

ORDERING INFORMTION TBLE Device code VS- 60 P U 06 -F 1 2 3 4 5 6 7 1 - product 2 - urrent rating (60 = 60 ) 3 - ircuit configuration: = common cathode 4 - Package: P = TO-247 (modified) 5 - U = ultrafast rectifier 6 - Voltage rating (06 = 600 V) 7 - Environmental digit: -F = RoHS-compliant and totally lead (Pb)-free -N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free ORDERING INFORMTION (Example) PREFERRED P/N QUNTITY PER T/R MINIMUM ORDER QUNTITY PKGING DESRIPTION VS-60PU06-F 25 500 ntistatic plastic tube VS-60PU06-N3 25 500 ntistatic plastic tube Dimensions Part marking information SPIE model LINKS TO RELTED DOUMENTS www.vishay.com/doc?95542 www.vishay.com/doc?95007 www.vishay.com/doc?96084 Revision: 17-Mar-17 5 Document Number: 94658 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com RE SUBJET TO SPEIFI DISLIMERS, SET FORTH T www.vishay.com/doc?900

DIMENSIONS in millimeters and inches TO-247 Outline Dimensions B (2) R/2 Q (3) E S 2 Ø K M D B M (6) Φ P (Datum B) D2 Φ P1 2 x R (2) D D1 (4) 1 2 3 D Thermal pad 4 (5) L1 L See view B (4) E1 0.01 M D B M 2 x b2 3 x b 0. M M b4 2 x e 1 View - Plating (b1, b3, b5) Base metal DDE E (c) c1 (b, b2, b4) (4) Section -, D - D, E - E View B SYMBOL MILLIMETERS INHES MILLIMETERS INHES NOTES SYMBOL MIN. MX. MIN. MX. MIN. MX. MIN. MX. NOTES 4.65 5.31 0.183 0.209 D2 0.51 1.30 0.020 0.051 1 2.21 2.59 0.087 0.2 E 15.29 15.87 0.602 0.625 3 2 1.50 2.49 0.059 0.098 E1 13.72-0.540 - b 0.99 1.40 0.039 0.055 e 5.46 BS 0.215 BS b1 0.99 1.35 0.039 0.053 Ø K 2.54 0.0 b2 1.65 2.39 0.065 0.094 L 14.20 16. 0.559 0.634 b3 1.65 2.34 0.065 0.092 L1 3.71 4.29 0.146 0.169 b4 2.59 3.43 0.2 0.135 Ø P 3.56 3.66 0.14 0.144 b5 2.59 3.38 0.2 0.133 Ø P1-6.98-0.275 c 0.38 0.89 0.015 0.035 Q 5.31 5.69 0.209 0.224 c1 0.38 0.84 0.015 0.033 R 4.52 5.49 0.178 0.216 D 19.71 20.70 0.776 0.815 3 S 5.51 BS 0.217 BS D1 13.08-0.515-4 Notes (1) Dimensioning and tolerancing per SME Y14.5M-1994 (2) ontour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDE outline TO-247 with exception of dimension c Revision: 20-pr-17 1 Document Number: 95223 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com RE SUBJET TO SPEIFI DISLIMERS, SET FORTH T www.vishay.com/doc?900

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